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Jianlin Liu - Publications

Affiliations: 
Electrical Engineering University of California, Riverside, Riverside, CA, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Condensed Matter Physics
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Year Citation  Score
2020 He Y, Tian H, Das P, Cui Z, Pena P, Chiang I, Shi W, Xu L, Li Y, Yang T, Isarraraz M, Ozkan CS, Ozkan M, Lake RK, Liu J. Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal-Insulator-Metal Tunneling Devices. Acs Applied Materials & Interfaces. PMID 32635717 DOI: 10.1021/Acsami.0C07201  0.37
2019 He Y, Tian H, Khanaki A, Shi W, Tran J, Cui Z, Wei P, Liu J. Large-area adlayer-free single-layer h-BN film achieved by controlling intercalation growth Applied Surface Science. 498: 143851. DOI: 10.1016/J.Apsusc.2019.143851  0.332
2018 Tian H, Khanaki A, Das P, Zheng R, Cui Z, He Y, Shi W, Xu Z, Lake RK, Liu J. The role of carbon interstitials in transition metal substrates on controllable synthesis of high-quality large-area two-dimensional hexagonal boron nitride layers. Nano Letters. PMID 29727192 DOI: 10.1021/Acs.Nanolett.7B05179  0.318
2018 Suja M, Debnath B, Bashar SB, Su L, Lake R, Liu J. Electrically driven plasmon-exciton coupled random lasing in ZnO metal-semiconductor-metal devices Applied Surface Science. 439: 525-532. DOI: 10.1016/J.Apsusc.2018.01.075  0.335
2017 Khanaki A, Tian H, Xu Z, Zheng R, He Y, Cui Z, Yang J, Liu J. Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures. Nanotechnology. PMID 29165320 DOI: 10.1088/1361-6528/Aa9C58  0.32
2017 Li G, Suja M, Chen M, Bekyarova E, Haddon RC, Liu J, Itkis ME. Visible Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film - ZnO Vertical Heterostructure. Acs Applied Materials & Interfaces. PMID 28948759 DOI: 10.1021/Acsami.7B07765  0.399
2017 Khanaki A, Xu Z, Tian H, Zheng R, Zuo Z, Zheng JG, Liu J. Self-assembled Cubic Boron Nitride Nanodots. Scientific Reports. 7: 4087. PMID 28642622 DOI: 10.1038/S41598-017-04297-1  0.334
2017 Suja M, Bashar SB, Debnath B, Su L, Shi W, Lake R, Liu J. Electrically driven deep ultraviolet MgZnO lasers at room temperature. Scientific Reports. 7: 2677. PMID 28572587 DOI: 10.1038/S41598-017-02791-0  0.364
2017 Xu Z, Tian H, Khanaki A, Zheng R, Suja M, Liu J. Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy. Scientific Reports. 7: 43100. PMID 28230178 DOI: 10.1038/Srep43100  0.369
2017 Zheng R, Khanaki A, Tian H, He Y, Cui Y, Xu Z, Liu J. Precipitation growth of graphene under exfoliated hexagonal boron nitride to form heterostructures on cobalt substrate by molecular beam epitaxy Applied Physics Letters. 111: 011903. DOI: 10.1063/1.4991369  0.325
2017 Zheng R, Xu Z, Khanaki A, Tian H, Zuo Z, Zheng J, Liu J. Low-temperature growth of graphene on iron substrate by molecular beam epitaxy Thin Solid Films. 627: 39-43. DOI: 10.1016/J.Tsf.2017.02.057  0.319
2016 Bashar SB, Suja M, Morshed M, Gao F, Liu J. An Sb-doped p-type ZnO nanowire based random laser diode. Nanotechnology. 27: 065204. PMID 26762674 DOI: 10.1088/0957-4484/27/6/065204  0.454
2016 Zhang B, Hu C, Ren T, Wang B, Qi J, Zhang Q, Zheng JG, Xin Y, Liu J. Metal/ZnO/MgO/Si/Metal Write-Once-Read-Many-Times Memory Ieee Transactions On Electron Devices. 63: 3508-3513. DOI: 10.1109/Ted.2016.2589272  0.43
2016 Bashar SB, Suja M, Shi W, Liu J. Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode Applied Physics Letters. 109: 192101. DOI: 10.1063/1.4967177  0.383
2016 Xu Z, Khanaki A, Tian H, Zheng R, Suja M, Zheng J, Liu J. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy Applied Physics Letters. 109: 043110. DOI: 10.1063/1.4960165  0.345
2016 Gao F, Zhang D, Wang J, Sun H, Yin Y, Sheng Y, Yan S, Yan B, Sui C, Zheng Y, Shi Y, Liu J. Ultraviolet electroluminescence from Au-ZnO nanowire Schottky type light-emitting diodes Applied Physics Letters. 108: 261103. DOI: 10.1063/1.4954758  0.353
2016 Chen S, Chen J, Liu J, Qi J, Wang Y. Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate Applied Surface Science. 387: 103-108. DOI: 10.1016/J.Apsusc.2016.06.085  0.383
2016 Bashar SB, Wu C, Suja M, Tian H, Shi W, Liu J. Electrically Pumped Whispering Gallery Mode Lasing from Au/ZnO Microwire Schottky Junction Advanced Optical Materials. 4: 2063-2067. DOI: 10.1002/Adom.201600513  0.355
2015 Zuo Z, Xu Z, Zheng R, Khanaki A, Zheng JG, Liu J. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy. Scientific Reports. 5: 14760. PMID 26442629 DOI: 10.1038/Srep14760  0.336
2015 Gao F, Morshed MM, Bashar SB, Zheng Y, Shi Y, Liu J. Electrically pumped random lasing based on an Au-ZnO nanowire Schottky junction. Nanoscale. 7: 9505-9. PMID 25946977 DOI: 10.1039/C5Nr01349F  0.364
2015 Suja M, Bashar SB, Morshed MM, Liu J. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy. Acs Applied Materials & Interfaces. 7: 8894-9. PMID 25835032 DOI: 10.1021/Acsami.5B01564  0.391
2015 Xu Z, Zheng R, Khanaki A, Zuo Z, Liu J. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4936378  0.316
2015 Wang B, Ren T, Chen S, Zhang B, Zhang R, Qi J, Chu S, Huang J, Liu J. Resistive switching in Ga- and Sb-doped ZnO single nanowire devices Journal of Materials Chemistry C. 3: 11881-11885. DOI: 10.1039/C5Tc02102B  0.376
2015 Chen S, Chen J, Liu J, Qi J, Wang Y. The effect of high-temperature oxygen annealing on field emission from ZnO nanowire arrays Applied Surface Science. 357: 413-416. DOI: 10.1016/J.Apsusc.2015.09.030  0.349
2014 Morshed MM, Suja M, Zuo Z, Liu J. Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device Applied Physics Letters. 105: 211107. DOI: 10.1063/1.4902921  0.371
2014 Huang J, Monzur Morshed M, Zuo Z, Liu J. Distributed Bragg reflector assisted low-threshold ZnO nanowire random laser diode Applied Physics Letters. 104: 131107. DOI: 10.1063/1.4870513  0.378
2014 Morshed MM, Zuo Z, Huang J, Liu J. Ultraviolet random lasing from Mg0.12Zn0.88O:N/ZnO:Ga single-heterostructure diode Applied Physics A. 118: 817-821. DOI: 10.1007/S00339-014-8804-6  0.401
2014 Morshed MM, Zuo Z, Huang J, Zheng JG, Lin Q, Yan X, Liu J. Photoluminescence study of nitrogen-doped p-type Mg xZn1−xO nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy Applied Physics a: Materials Science and Processing. 117: 1467-1472. DOI: 10.1007/S00339-014-8576-Z  0.366
2013 Huang J, Qi J, Li Z, Liu J. Vertically aligned nanostructures based on Na-doped ZnO nanorods for wide band gap semiconductor memory applications. Nanotechnology. 24: 395203. PMID 24013400 DOI: 10.1088/0957-4484/24/39/395203  0.459
2013 Qi J, Olmedo M, Zheng JG, Liu J. Multimode resistive switching in single ZnO nanoisland system. Scientific Reports. 3: 2405. PMID 23934276 DOI: 10.1038/Srep02405  0.368
2013 Qi J, Huang J, Paul D, Ren J, Chu S, Liu J. Current self-complianced and self-rectifying resistive switching in Ag-electroded single Na-doped ZnO nanowires. Nanoscale. 5: 2651-4. PMID 23456175 DOI: 10.1039/C3Nr00027C  0.304
2013 Zuo Z, Morshed M, Beyermann WP, Zheng JG, Xin Y, Liu J. Peculiarly strong room-temperature ferromagnetism from low Mn-doping in ZnO grown by molecular beam epitaxy Aip Advances. 3. DOI: 10.1063/1.4794799  0.341
2013 Ren J, Yan D, Chu S, Liu J. Non-volatile memory effect of a high-density NiSi nano-dots floating gate memory using single triangular-shaped Si nanowire channel Applied Physics a: Materials Science and Processing. 111: 719-724. DOI: 10.1007/S00339-013-7641-3  0.428
2013 Kong J, Chu S, Huang J, Olmedo M, Zhou W, Zhang L, Chen Z, Liu J. Use of distributed Bragg reflectors to enhance Fabry-Pérot lasing in vertically aligned ZnO nanowires Applied Physics a: Materials Science and Processing. 110: 23-28. DOI: 10.1007/S00339-012-7330-7  0.316
2013 Huang J, Chu S, Kong J, Zhang L, Schwarz CM, Wang G, Chernyak L, Chen Z, Liu J. ZnO p-n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires Advanced Optical Materials. 1: 179-185. DOI: 10.1002/Adom.201200062  0.427
2012 Qi J, Olmedo M, Ren J, Zhan N, Zhao J, Zheng JG, Liu J. Resistive switching in single epitaxial ZnO nanoislands. Acs Nano. 6: 1051-8. PMID 22257020 DOI: 10.1021/Nn204809A  0.344
2012 Zhou H, Li Z, Huang J, Liu J. High-density Co/Al2O3 core-shell nanocrystal memory Mrs Proceedings. 1430. DOI: 10.1557/Opl.2012.1020  0.367
2012 Shi Z, Wang X, Liu J, Lin L, Zhao H, Fang Q, Wang L, Zhang C, Fan S, Tang H, Li B, Wang A, Liu J, Cheng Y. Programmable On-Chip ESD Protection Using Nanocrystal Dots Mechanism and Structures Ieee Transactions On Nanotechnology. 11: 884-889. DOI: 10.1109/Tnano.2012.2204767  0.318
2012 Ren J, Li B, Zheng JG, Olmedo M, Zhou H, Shi Y, Liu J. Nonplanar NiSi nanocrystal floating-gate memory based on a triangular-shaped Si nanowire array for extending nanocrystal memory scaling limit Ieee Electron Device Letters. 33: 1390-1392. DOI: 10.1109/Led.2012.2206554  0.401
2012 Huang J, Li Z, Chu S, Liu J. P-type behavior of Sb doped ZnO from p-n-p memory structure Applied Physics Letters. 101. DOI: 10.1063/1.4769097  0.346
2012 Zuo Z, Zhou H, Olmedo MJ, Kong J, Beyermann WP, Zheng JG, Xin Y, Liu J. Strong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy Journal of Applied Physics. 112. DOI: 10.1063/1.4749397  0.353
2012 Ren J, Hu H, Liu F, Chu S, Liu J. Strain-less directed self-assembly of Si nanocrystals on patterned SiO 2 substrate Journal of Applied Physics. 112. DOI: 10.1063/1.4749269  0.347
2012 Chu S, Ren J, Yan D, Huang J, Liu J. Noble metal nanodisks epitaxially formed on ZnO nanorods and their effect on photoluminescence Applied Physics Letters. 101. DOI: 10.1063/1.4739516  0.313
2012 Zhou H, Dorman JA, Perng YC, Chang JP, Liu J. Temperature-dependent electron transport in highly ordered Co/Al 2O 3 core-shell nanocrystal memory synthesized with di-block co-polymers Journal of Applied Physics. 111. DOI: 10.1063/1.3698322  0.352
2012 Ren J, Li B, Zheng JG, Liu J. High-density NiSi nanocrystals embedded in Al 2O 3/SiO 2 double-barrier for robust retention of nonvolatile memory Solid-State Electronics. 67: 23-26. DOI: 10.1016/J.Sse.2011.07.016  0.44
2012 Zhou H, Li Z, Zheng J, Liu J. Rapid thermal oxygen annealing formation of nickel silicide nanocrystals for nonvolatile memory Applied Physics A. 109: 535-538. DOI: 10.1007/S00339-012-7299-2  0.439
2012 Kong J, Chu S, Zuo Z, Ren J, Olmedo M, Liu J. Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure Applied Physics a: Materials Science and Processing. 107: 971-975. DOI: 10.1007/S00339-012-6850-5  0.355
2012 Qi J, Ren J, Olmedo M, Zhan N, Liu J. Unipolar resistive switching in Au/Cr/Mg 0.84Zn 0.16O 2.δ/p +-Si Applied Physics a: Materials Science and Processing. 107: 891-897. DOI: 10.1007/S00339-012-6815-8  0.404
2012 Qi J, Zhang Q, Liu J. The effect of top contact on ZnO write‐once–read‐many‐times memory Physica Status Solidi-Rapid Research Letters. 6: 478-480. DOI: 10.1002/Pssr.201206431  0.39
2011 Olmedo M, Wang C, Ryu K, Zhou H, Ren J, Zhan N, Zhou C, Liu J. Carbon nanotube memory by the self-assembly of silicon nanocrystals as charge storage nodes. Acs Nano. 5: 7972-7. PMID 21902187 DOI: 10.1021/Nn202377F  0.402
2011 Chu S, Wang G, Zhou W, Lin Y, Chernyak L, Zhao J, Kong J, Li L, Ren J, Liu J. Electrically pumped waveguide lasing from ZnO nanowires. Nature Nanotechnology. 6: 506-10. PMID 21725304 DOI: 10.1038/Nnano.2011.97  0.364
2011 Chu S, Zhao J, Zuo Z, Kong J, Li L, Liu J. Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode Journal of Applied Physics. 109. DOI: 10.1117/12.877322  0.39
2011 Li B, Liu J, Gann RD, Yarmoff JA, Zhu Y. Vapor-solid-solid growth of NiSi2 nanocrystals for memory application Ieee Transactions On Nanotechnology. 10: 1120-1125. DOI: 10.1109/Tnano.2011.2112774  0.403
2011 Zhou H, Li B, Yang Z, Zhan N, Yan D, Lake RK, Liu J. TiSi2 nanocrystal metal oxide semiconductor field effect transistor memory Ieee Transactions On Nanotechnology. 10: 499-505. DOI: 10.1109/Tnano.2010.2049271  0.415
2011 Li B, Liu J. Nonvolatile Memory With Ge/Si Heteronanocrystals as Floating Gate Ieee Transactions On Nanotechnology. 10: 284-290. DOI: 10.1109/Tnano.2009.2039488  0.431
2011 Qi J, Zhang Q, Huang J, Ren J, Olmedo M, Liu J. Write-once-read-many-times memory based on ZnO on p-Si for long-time archival storage Ieee Electron Device Letters. 32: 1445-1447. DOI: 10.1109/Led.2011.2162219  0.419
2011 Zhan N, Olmedo M, Wang G, Liu J. Graphene based nickel nanocrystal flash memory Applied Physics Letters. 99. DOI: 10.1063/1.3640210  0.39
2011 Zhou H, Dorman JA, Perng YC, Gachot S, Zheng JG, Chang JP, Liu J. Memory characteristics of ordered Co/ Al2 O3 core-shell nanocrystal arrays assembled by diblock copolymer process Applied Physics Letters. 98. DOI: 10.1063/1.3589993  0.335
2011 Wang G, Chu S, Zhan N, Lin Y, Chernyak L, Liu J. ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection Applied Physics Letters. 98. DOI: 10.1063/1.3551628  0.401
2011 Liu W, Xiu F, Sun K, Xie Y, Wang KL, Wang Y, Zou J, Yang Z, Liu J. Na-Doped p-Type ZnO Microwires Journal of the American Chemical Society. 133: 10677-10677. DOI: 10.1021/Ja204565W  0.315
2011 Zhan N, Olmedo M, Wang G, Liu J. Layer-by-layer synthesis of large-area graphene films by thermal cracker enhanced gas source molecular beam epitaxy Carbon. 49: 2046-2052. DOI: 10.1016/J.Carbon.2011.01.033  0.329
2011 Zhan N, Wang G, Liu J. Cobalt-assisted large-area epitaxial graphene growth in thermal cracker enhanced gas source molecular beam epitaxy Applied Physics a: Materials Science and Processing. 105: 341-345. DOI: 10.1007/S00339-011-6612-9  0.364
2011 Wang G, Chu S, Zhan N, Zhou H, Liu J. Synthesis and characterization of Ag-doped p-type ZnO nanowires Applied Physics a: Materials Science and Processing. 103: 951-954. DOI: 10.1007/S00339-011-6390-4  0.366
2011 Zhao J, Liang H, Sun J, Feng Q, Li S, Bian J, Hu L, Du G, Ren J, Liu J. Influence of Sb doping on optical and structural properties of ZnO by MOCVD Physica Status Solidi (a) Applications and Materials Science. 208: 825-828. DOI: 10.1002/Pssa.201026659  0.364
2010 Liu W, Xiu F, Sun K, Xie YH, Wang KL, Wang Y, Zou J, Yang Z, Liu J. Na-doped p-type ZnO microwires. Journal of the American Chemical Society. 132: 2498-9. PMID 20141133 DOI: 10.1021/Ja908521S  0.363
2010 Zhou H, Dorman JA, Perng Y, Gachot S, Huang J, Mao Y, Chang J, Liu J. Co/HfO2 core shell nanocrystal memory Mrs Proceedings. 1250. DOI: 10.1557/Proc-1250-G01-09  0.384
2010 Yang Z, Chu S, Chen WV, Li L, Kong J, Ren J, Yu PKL, Liu J. ZnO:Sb/ZnO:Ga light emitting diode on c-plane sapphire by molecular beam epitaxy Applied Physics Express. 3. DOI: 10.1143/Apex.3.032101  0.407
2010 Kong J, Li L, Yang Z, Liu J. Ultraviolet light emissions in MgZnO/ZnO double heterojunction diodes by molecular beam epitaxy Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28. DOI: 10.1116/1.3374436  0.401
2010 Li B, Ren J, Liu J. Synthesis of high-density PtSi nanocrystals for memory application Applied Physics Letters. 96. DOI: 10.1063/1.3421546  0.422
2010 Li B, Liu J. Self-assembled Ge/Si hetero-nanocrystals for nonvolatile memory application Thin Solid Films. 518. DOI: 10.1016/J.Tsf.2009.10.103  0.463
2010 Olmedo M, Martinez-Morales AA, Liu G, Yengel E, Ozkan CS, Lau CN, Ozkan M, Liu J. Study of the effects of growth temperature and time on the alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes Thin Solid Films. 518: S35-S37. DOI: 10.1016/J.Tsf.2009.10.050  0.392
2009 Li L, Yang Z, Liu J. Cyan electroluminescence from n-ZnO/ i-CdZnO/ p-Si heterojunction diodes Mrs Proceedings. 1201. DOI: 10.1557/Proc-1201-H01-09  0.417
2009 Li B, Liu J. VSS-induced NiSi 2 Nanocrystal Memory Mrs Proceedings. 1160. DOI: 10.1557/Proc-1160-H01-09  0.437
2009 Olmedo M, Martinez-Morales AA, Liu G, Yengel E, Ozkan CS, Lau CN, Ozkan M, Liu J. Periodic alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes Applied Physics Letters. 94. DOI: 10.1063/1.3103547  0.383
2008 Lu TM, Sun L, Tsui DC, Lyon S, Pan W, Mühlberger M, Schäffler F, Liu J, Xie YH. In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.233309  0.351
2008 Chu S, Olmedo M, Yang Z, Kong J, Liu J. Electrically pumped ultraviolet ZnO diode lasers on Si Applied Physics Letters. 93. DOI: 10.1063/1.3012579  0.446
2008 Kong J, Chu S, Olmedo M, Li L, Yang Z, Liu J. Dominant ultraviolet light emissions in packed ZnO columnar homojunction diodes Applied Physics Letters. 93. DOI: 10.1063/1.2992629  0.413
2008 Xu J, Ott R, Sabau AS, Pan Z, Xiu F, Liu J, Erie JM, Norton DP. Generation of nitrogen acceptors in ZnO using pulse thermal processing Applied Physics Letters. 92. DOI: 10.1063/1.2911725  0.325
2007 Yang Z, Biasini M, Mandalapu LJ, Zuo Z, Beyermann WP, Liu J. Electron carrier concentration dependent magnetization in ZnO:Co and ZnO:Mn thin films Mrs Proceedings. 1035. DOI: 10.1557/Proc-1035-L06-06  0.345
2007 Zhu Y, Li B, Liu J. Self-aligned TiSi2/Si Hetero-nanocrystal Nonvolatile Memory Mrs Proceedings. 997. DOI: 10.1557/Proc-0997-I02-05  0.389
2007 Li B, Liu J, Liu GF, Yarmoff JA. GeSi heteronanocrystal floating gate memory Applied Physics Letters. 91. DOI: 10.1063/1.2793687  0.436
2007 Zhu Y, Li B, Liu J. Fabrication and characterization of TiSi2∕Si heteronanocrystal metal-oxide-semiconductor memories Journal of Applied Physics. 101: 63702. DOI: 10.1063/1.2710441  0.403
2007 Zhu Y, Zhao D, Liu J. Numerical investigation of transient capacitances of Ge∕Si heteronanocrystal memories in retention mode Journal of Applied Physics. 101: 34508. DOI: 10.1063/1.2434947  0.376
2006 Mandalapu LJ, Xiu F, Yang Z, Liu J. UV photoconductors based on Ga-doped ZnO films Materials Research Society Symposium Proceedings. 891: 351-356. DOI: 10.1557/Proc-0891-Ee08-07  0.401
2006 Yang Z, Liu J, Shi Y, Zheng Y, Wang KL. Folded Acoustic Phonon Modes in Ge/Si Quantum Dot Superlattices With Different Periods Journal of Nanoelectronics and Optoelectronics. 1: 86-91. DOI: 10.1166/Jno.2006.009  0.359
2006 Zhao D, Zhu Y, Li R, Liu J. Simulation of a Ge-Si hetero-nanocrystal memory Ieee Transactions On Nanotechnology. 5: 37-41. DOI: 10.1109/Tnano.2005.861405  0.449
2006 Galatsis K, Wang K, Botros Y, Yang Y, Xie YH, Stoddart JF, Kaner RB, Ozkan C, Liu J, Ozkan M, Zhou C, Kim KW. Emerging memory devices Ieee Circuits and Devices Magazine. 22: 12-21. DOI: 10.1109/Mcd.2006.1657845  0.34
2006 Fonoberov VA, Alim KA, Balandin AA, Xiu F, Liu J. Photoluminescence investigation of the carrier recombination processes in ZnO quantum dots and nanocrystals Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.165317  0.352
2006 Lai K, Lu TM, Pan W, Tsui DC, Lyon S, Liu J, Xie YH, Mühlberger M, Schäffler F. Valley splitting of Si Si1-x Gex heterostructures in tilted magnetic fields Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.161301  0.334
2006 Zhu Y, Li B, Liu J, Liu GF, Yarmoff JA. TiSi2/Si heteronanocrystal metal-oxide-semiconductor-field- effect-transistor memory Applied Physics Letters. 89. DOI: 10.1063/1.2402232  0.441
2006 Zhu Y, Zhao D, Li R, Liu J. Self-aligned TiSi2∕Si heteronanocrystal nonvolatile memory Applied Physics Letters. 88: 103507. DOI: 10.1063/1.2183815  0.439
2006 Zhao ZM, Yoon TS, Feng W, Li BY, Kim JH, Liu J, Hulko O, Xie YH, Kim HM, Kim KB, Kim HJ, Wang KL, Ratsch C, Caflisch R, Ryu DY, et al. The challenges in guided self-assembly of Ge and InAs quantum dots on Si Thin Solid Films. 508: 195-199. DOI: 10.1016/J.Tsf.2005.08.407  0.343
2006 Zhao D, Zhu Y, Li R, Liu J. Transient processes in a Ge/Si hetero-nanocrystal p-channel memory Solid-State Electronics. 50: 362-366. DOI: 10.1016/J.Sse.2006.01.008  0.419
2006 Zhao D, Zhu Y, Liu J. Charge storage in a metal–oxide–semiconductor capacitor containing cobalt nanocrystals Solid-State Electronics. 50: 268-271. DOI: 10.1016/J.Sse.2005.12.015  0.483
2006 Xiu F, Yang Z, Zhao D, Liu J, Alim KA, Balandin AA, Itkis ME, Haddon RC. ZnO growth on Si with low-temperature ZnO buffer layers by ECR-assisted MBE Journal of Crystal Growth. 286: 61-65. DOI: 10.1016/J.Jcrysgro.2005.09.056  0.393
2005 Zhu Y, Zhao D, Li R, Liu J. Threshold voltage shift of heteronanocrystal floating gate flash memory Journal of Applied Physics. 97: 34309. DOI: 10.1063/1.1847700  0.413
2005 Zhao ZM, Hul'ko O, Kim HJ, Liu J, Shi B, Xie YH. Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001) Thin Solid Films. 483: 158-163. DOI: 10.1016/J.Tsf.2005.01.003  0.366
2005 Zhao D, Zhu Y, Li R, Liu J. Simulation of a cobalt silicide/Si hetero-nanocrystal memory Solid-State Electronics. 49: 1974-1977. DOI: 10.1016/J.Sse.2005.09.010  0.427
2004 Zhu Y, Zhao D, Li R, Liu J. Threshold Voltage Shift in Hetero-nanocystal Floating Gate Flash Memory Mrs Proceedings. 832. DOI: 10.1557/Proc-832-F3.4  0.403
2004 Zhao D, Zhu Y, Li R, Liu J. Computer Simulation of Charging and Erasing Transients of a Ge/Si Hetero-nanocrystal-based Flash Memory Mrs Proceedings. 832. DOI: 10.1557/Proc-832-F3.3  0.392
2004 Liu J, Kim HJ, Hul'ko O, Xie YH, Sahni S, Bandaru P, Yablonovitch E. Ge films grown on Si substrates by molecular-beam epitaxy below 450°C Journal of Applied Physics. 96: 916-918. DOI: 10.1063/1.1738530  0.397
2004 Khitun A, Liu J, Wang KL. On the modeling of lattice thermal conductivity in semiconductor quantum dot superlattices Applied Physics Letters. 84: 1762-1764. DOI: 10.1063/1.1668317  0.305
2004 Yang Z, Shi Y, Liu J, Yan B, Zhang R, Zheng Y, Wang K. Optical properties of Ge/Si quantum dot superlattices Materials Letters. 58: 3765-3768. DOI: 10.1016/J.Matlet.2004.08.016  0.393
2004 Liu F, Tong S, Liu J, Wang KL. Normal-Incidence Mid-Infrared Ge Quantum-Dot Photodetector Journal of Electronic Materials. 33: 846-850. DOI: 10.1007/S11664-004-0210-Y  0.35
2000 Borca-Tasciuc T, Liu W, Liu J, Zeng T, Song DW, Moore CD, Chen G, Wang KL, Goorsky MS, Radetic T, Gronsky R, Koga T, Dresselhaus MS. Thermal conductivity of symmetrically strained Si/Ge superlattices Superlattices and Microstructures. 28: 199-206. DOI: 10.1006/Spmi.2000.0900  0.373
1999 Liu J, Tang Y, Wang KL. Study of phonons in self-organized multiple Ge quantum dots Journal of Electronic Materials. 28: 1010. DOI: 10.1007/S11664-000-0044-1  0.359
1999 Wu W, Liu J, Tang Y, Wang KL. Infrared spectroscopy of intraband transitions in Ge/Si quantum dot superlattices Superlattices and Microstructures. 26: 219-227. DOI: 10.1006/Spmi.1999.0778  0.392
1998 Sun X, Liu J, Cronin SB, Wang KL, Chen G, Koga T, Dresselhaus MS. Experimental Study of the Effect of the Quantum Well Structures on the Thermoelectric Figure of Merit in Si/Si1-xGex System Mrs Proceedings. 545. DOI: 10.1557/Proc-545-369  0.411
1998 Liu J, Balandin A, Borca-Tascjuc T, Tang YS, Wang KL, Chen G. Experimental Study of Phonon-Folding in Si/Ge and Si/Sige Structures Designed for Thermoelectric Applications Mrs Proceedings. 545. DOI: 10.1557/Proc-545-111  0.392
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