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Kangho Lee, Ph.D. - Publications

Affiliations: 
2007 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Yim C, Lee K, McEvoy N, O'Brien M, Riazimehr S, Berner NC, Cullen CP, Kotakoski J, Meyer JC, Lemme MC, Duesberg GS. High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature. Acs Nano. PMID 27661979 DOI: 10.1021/Acsnano.6B04898  0.305
2009 Lee K, Nair PR, Scott A, Alam MA, Janes DB. Device considerations for development of conductance-based biosensors. Journal of Applied Physics. 105: 102046. PMID 24753627 DOI: 10.1063/1.3116630  0.651
2008 Lee K, Nair PR, Alam MA, Janes DB, Wampler HP, Zemlyanov DY, Ivanisevic A. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors. Journal of Applied Physics. 103: 114510-1145107. PMID 19484151 DOI: 10.1063/1.2936853  0.608
2008 Wampler HP, Zemlyanov DY, Lee K, Janes DB, Ivanisevic A. Mixed adlayer of alkanethiol and peptide on GaAs(100): quantitative characterization by X-ray photoelectron spectroscopy. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 3164-70. PMID 18275237 DOI: 10.1021/La703543G  0.512
2008 Lee K, Lu G, Facchetti A, Janes DB, Marks TJ. Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2899965  0.656
2007 Ju S, Lee K, Yoon MH, Facchetti A, Marks TJ, Janes DB. High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: Effects of metal contacts and ozone treatment Nanotechnology. 18. DOI: 10.1088/0957-4484/18/15/155201  0.712
2006 Ju S, Lee K, Janes DB, Dwivedi RC, Baffour-Awuah H, Wilkins R, Yoon M, Facchetti A, Marks TJ. Erratum: “Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics” [Appl. Phys. Lett. 89, 073510 (2006)] Applied Physics Letters. 89: 139902. DOI: 10.1063/1.2356893  0.665
2006 Ju S, Lee K, Janes DB, Dwivedi RC, Baffour-Awuah H, Wilkins R, Yoon MH, Facchetti A, Mark TJ. Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2336744  0.678
2005 Ju S, Lee K, Janes DB, Yoon MH, Facchetti A, Marks TJ. Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics. Nano Letters. 5: 2281-6. PMID 16277468 DOI: 10.1021/Nl051658J  0.694
2004 Choi J, Lee K, Janes DB. Nanometer scale gap made by conventional microscale fabrication: Step junction Nano Letters. 4: 1699-1703. DOI: 10.1021/Nl049113X  0.592
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