Year |
Citation |
Score |
2013 |
Motoyama K, Van Der Straten O, Maniscalco J, He M. PVD Cu reflow seed process optimization for defect reduction in nanoscale Cu/Low-k dual damascene interconnects Journal of the Electrochemical Society. 160. DOI: 10.1149/2.035312jes |
0.339 |
|
2013 |
Kelly J, Lin X, Nogami T, Van Der Straten O, Demarest J, Li J, Murphy R, Zhang X, Penny C, Parks C, Edelstein D. Electrodeposited Cu film morphology on thin PVD Cu seed layers Journal of the Electrochemical Society. 160. DOI: 10.1149/2.031312jes |
0.379 |
|
2013 |
Kelly J, Lin X, Nogami T, Van Der Straten O, Demarest J, Li J, Murphy R, Zhang X, Penny C, Parks C, DeHaven P, Madan A, Edelstein D. Electrodeposited Cu film morphology on thin PVD Cu seed layers Ecs Transactions. 58: 17-28. DOI: 10.1149/05817.0017ecst |
0.388 |
|
2013 |
Bolom T, Lee JY, Zhang X, Justison P, Oh M, Simon AH, Flaitz P, Nag J, Baumann FH, Filippi R, Kaltalioglu E, Van Der Straten O, Nogami T, Penny CJ, Edelstein D. Electrical properties and reliability of ALD TaN barrier for sub-90nmPitch Cu interconnects Advanced Metallization Conference (Amc). 1-6. |
0.393 |
|
2012 |
Kelly J, Nogami T, Van Der Straten O, Demarest J, Li J, Penny C, Vo T, Parks C, Dehaven P, Hu CK, Liniger E. Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects Journal of the Electrochemical Society. 159: D563-D569. DOI: 10.1149/2.008210Jes |
0.39 |
|
2012 |
Motoyama K, Van Der Straten O, Tomizawa H, Maniscalco J, Chen ST. Novel Cu reflow seed process for Cu/low-k 64nm pitch dual damascene interconnects and beyond 2012 Ieee International Interconnect Technology Conference, Iitc 2012. DOI: 10.1109/IITC.2012.6251656 |
0.328 |
|
2012 |
Chen JHC, Waskiewicz C, Fan SSC, Halle S, Koay CS, Xu Y, Saulnier N, Tseng CH, Yin Y, Mignot Y, Beard M, Morris B, Horak D, Mignot S, Shobha H, ... ... Van Der Straten O, et al. 56 nm pitch copper dual-damascene interconnects with triple pitch split metal and double pitch split via 2012 Ieee International Interconnect Technology Conference, Iitc 2012. DOI: 10.1109/IITC.2012.6251637 |
0.336 |
|
2011 |
Tomizawa H, Chen ST, Horak D, Kato H, Yin Y, Ishikawa M, Kelly J, Koay CS, Landie G, Burns S, Tsumura K, Tagami M, Shobha H, Sankarapandian M, Van Der Straten O, et al. Robust self-aligned via process for 64nm pitch Dual-Damascene interconnects using pitch split double exposure patterning scheme 2011 Ieee International Interconnect Technology Conference and 2011 Materials For Advanced Metallization, Iitc/Mam 2011. DOI: 10.1109/IITC.2011.5940305 |
0.309 |
|
2011 |
Kaloyeros AE, Eisenbraun ET, Dunn K, van der Straten O. Zero thickness diffusion barriers and metallization liners for nanoscale device applications Chemical Engineering Communications. 198: 1453-1481. DOI: 10.1080/00986445.2011.576450 |
0.474 |
|
2010 |
Van Der Straten O, Shobha H, Demarest J, Maniscalco J. Interactions of metal-organic PEALD TaN with ultra-low k dielectric materials Ecs Transactions. 33: 195-201. DOI: 10.1149/1.3485256 |
0.319 |
|
2010 |
Kelly J, Van Der Straten O, Vo T, Janek R, Dordi Y. Deposition of copper on ruthenium for Cu metallization Ecs Transactions. 33: 145-158. DOI: 10.1149/1.3485251 |
0.434 |
|
2010 |
Cabral C, Fletcher B, Rodbell K, Nitta S, Guillorn M, Joseph E, Engelmann S, Bruce R, Baker B, Huang Q, Kelly J, Van Der Straten O, Nogami T, Spooner T, Edelstein D. Metallization opportunities and challenges for future back-end-of-the-line technology Advanced Metallization Conference (Amc). 136-137. |
0.386 |
|
2008 |
Van Der Straten O, Wynne J, Vo T, Maniscalco J, Nogami T, Ali I, Chiang S, Ren J, Ma P. PEALD Ru liner conformality and Cu trench fill characteristics Ecs Transactions. 16: 193-200. DOI: 110.1149/1.2979994 |
0.417 |
|
2007 |
Londergan AR, Elam JW, Van Der Straten O, De Gendt S, Bent SF, Kang SB. ECS Transactions - 3rd Symposium on Atomic Layer Deposition Applications: Preface Ecs Transactions. 11: iii. |
0.341 |
|
2006 |
van der Straten O, Zhu Y, Rullan J, Dunn K, Kaloyeros AE. Study of copper-refractory metal interfaces via solid-state wetting for emerging nanoscale interconnect applications Journal of Materials Research. 21: 255-262. DOI: 10.1557/Jmr.2006.0040 |
0.443 |
|
2006 |
Van Der Straten O, Rossnagel SM, Doyle JP, Rodbell KP. Metal-organic atomic layer deposition of metals for applications in interconnect technology Ecs Transactions. 1: 51-56. DOI: 10.1149/1.2209329 |
0.441 |
|
2005 |
Kim H, Detavenier C, Van Der Straten O, Rossnagel SM, Kellock AJ, Park DG. Robust TaN x diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition Journal of Applied Physics. 98. DOI: 10.1063/1.1935761 |
0.427 |
|
2004 |
Van Der Straten O, Zhu Y, Dunn K, Eisenbraun ET, Kaloyeros AE. Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemes Journal of Materials Research. 19: 447-453. DOI: 10.1557/Jmr.2004.19.2.447 |
0.485 |
|
2004 |
Van Der Straten O, Zhu Y, Rullan J, Topol K, Dunn K, Kaloyeros A. Atomic layer deposition of tantalum nitride on organosillcate and organic polymer-based low dielectric constant materials Materials Research Society Symposium Proceedings. 812: 165-170. |
0.363 |
|
2003 |
Van Der Straten O, Zhu Y, Dunn K, Kaloyeros A. Enhancement of copper wetting via surfactant-based post-treatment of ultra-thin atomic layer deposited tantalum nitride liners Materials Research Society Symposium - Proceedings. 766: 453-458. |
0.475 |
|
2002 |
Van Der Straten O, Zhu Y, Eisenbraun E, Kaloyeros A. Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization Proceedings of the Ieee 2002 International Interconnect Technology Conference, Iitc 2002. 188-190. DOI: 10.1109/IITC.2002.1014929 |
0.533 |
|
2002 |
Van Der Straten O, Zhu Y, Eisenbraun E, Kaloyeros A. Optimization of ultrathin ALD tantalum nitride films for zero-thickness liner applications Materials Research Society Symposium - Proceedings. 716: 471-476. |
0.49 |
|
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