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Shinya Yamakawa, Ph.D. - Publications

Affiliations: 
2005 Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Yamakawa S, Akis R, Faralli N, Saraniti M, Goodnick SM. Rigid ion model of high field transport in GaN. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 174206. PMID 21825410 DOI: 10.1088/0953-8984/21/17/174206  0.588
2008 Vitobello F, Faralli N, Yamakawa S, Goodnick SM, Saraniti M. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT Journal of Computational Electronics. 7: 244-247. DOI: 10.1007/S10825-008-0215-5  0.554
2007 Yamakawa S, Saraniti M, Goodnick SM. High field transport in GaN and AlGaN/GaN heterojunctions Proceedings of Spie - the International Society For Optical Engineering. 6471. DOI: 10.1117/12.705272  0.605
2005 Yamakawa S, Barker JM, Goodnick SM, Ferry DK, Saraniti M. Electron-phonon interaction of Wurtzite GaN and its effect on high field transport Aip Conference Proceedings. 772: 227-228. DOI: 10.1063/1.1994076  0.53
2005 Yamakawa S, Goodnick SM, Branlard J, Saraniti M. Frequency analysis of GaN MESFETs using full-band cellular Monte Carlo Physica Status Solidi C: Conferences. 2: 2573-2576. DOI: 10.1002/Pssc.200461525  0.595
2004 Yamakawa S, Aboud S, Saraniti M, Goodnick SM. Influence of the electron-phonon interaction on electron transport in wurtzite GaN Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/156  0.594
2004 Yamakawa S, Goodnick S, Aboud S, Saraniti M. Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs Journal of Computational Electronics. 3: 299-303. DOI: 10.1007/s10825-004-7065-6  0.529
2003 Yamakawa S, Aboud S, Saraniti M, Goodnick SM. Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method Journal of Computational Electronics. 2: 481-485. DOI: 10.1023/B:Jcel.0000011475.74817.6E  0.49
1998 Ueno H, Yamakawa S, Hamaguchi C, Miyatsuji K. Monte Carlo simulation of HEMT based on self-consistent method Vlsi Design. 6: 13-16.  0.33
1994 Miyatsuji K, Ueda D, Masaki K, Yamakawa S, Hamaguchi C. High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure Japanese Journal of Applied Physics. 33: 2378. DOI: 10.1143/JJAP.33.2378  0.341
1994 Miyatsuji K, Ueda D, Masaki K, Yamakawa S, Hamaguchi C. High-field transport of hot electrons in strained Si/SiGe heterostructures Semiconductor Science and Technology. 9: 772-774. DOI: 10.1088/0268-1242/9/5S/101  0.352
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