Richard J. McNeely - Publications

Affiliations: 
Northwestern University, Evanston, IL 
Area:
Inorganic Chemistry

20 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2000 McNeely RJ, Belot JA, Marks TJ, Wang Y, Dravid VP, Chudzik MP, Kannewurf CR. Analysis of the fluoride effect on the phase-selective growth of TlBa2Ca2Cu3O9−x thin films: Phase evolution and microstructure development Journal of Materials Research. 15: 1083-1097. DOI: 10.1557/Jmr.2000.0156  0.73
2000 McNeely RJ, Belot JA, Marks TJ, Wang Y, Dravid VP, Chudzik MP, Kannewurf CR. Analysis of the fluoride effect on the phase-selective growth of TlBa2Ca2Cu3O9-x thin films: Phase evolution and microstructure development Journal of Materials Research. 15: 1083-1097.  0.65
1999 Belot JA, McNeely RJ, Wang A, Reedy CJ, Marks TJ, Yap GPA, Rheingold AL. Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth Journal of Materials Research. 14: 12-15. DOI: 10.1557/Jmr.1999.0004  0.687
1999 Belot JA, Wang A, McNeely RJ, Liable-Sands L, Rheingold AL, Marks TJ. Highly Volatile, Low Melting, Fluorine-Free Precursors for Metal-Organic Chemical Vapor Deposition of Lanthanide Oxide-Containing Thin Films Chemical Vapor Deposition. 5: 65-69. DOI: 10.1002/(Sici)1521-3862(199903)5:2<65::Aid-Cvde65>3.0.Co;2-B  0.671
1999 Belot JA, Wang A, McNeely RJ, Liable-Sands L, Rheingold AL, Marks TJ. Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films Chemical Vapor Deposition. 5: 65-69.  0.511
1998 McNeely RJ, Belot JA, Schindler JL, Chudzik MP, Kannewurf CR, Zhang XF, Miller DJ, Marks TJ. Journal of Superconductivity: Incorporating Novel Magnetism. 11: 133-134. DOI: 10.1023/A:1022635424576  0.705
1998 Wang A, Cheng SC, Belot JA, McNeely RJ, Cheng J, Marcordes B, Marks TJ, Dai JY, Chang RPH, Schindler JL, Chudzik MP, Kannewurf CR. Metal-organic chemical vapor deposition routes to films of transparent conducting oxides Materials Research Society Symposium - Proceedings. 495: 3-10.  0.56
1998 McNeely RJ, Belot JA, Schindler JL, Chudzik MP, Kannewurf CR, Zhang XF, Miller DJ, Marks TJ. Novel metal-organic chemical vapor deposition / TlF annealing route to thin films of Tl 1Ba 2Ca 2Cu 3O 9+x Journal of Superconductivity. 11: 133-134.  0.632
1997 Wang A, Cheng SC, Belot JA, Mcneely RJ, Cheng J, Marcordes B, Marks TJ, Dai JY, Chang R, Schindler JL, Chudzik M, Kannewurf CR. Metal-Organic Chemical Vapor Deposition Routes to Films of Transparent Conducting Oxides Mrs Proceedings. 495. DOI: 10.1557/Proc-495-3  0.655
1997 Hinds BJ, McNeely RJ, Studebaker DB, Marks TJ, Hogan TP, Schindler JL, Kannewurf CR, Zhang XF, Miller DJ. Thin films for superconducting electronics: Precursor performance issues, deposition mechanisms, and superconducting phase formation-processing strategies in the growth of Tl2Ba2CaCu2O8 films by metal-organic chemical vapor deposition Journal of Materials Research. 12: 1214-1236. DOI: 10.1557/Jmr.1997.0171  0.783
1997 McNeely RJ, Belot JA, Hinds BJ, Marks TJ, Schindler JL, Chudzik MP, Kannewurf CR, Zhang XF, Miller DJ. Efficient route to TlBa2Ca2Cu3O9+x thin films by metal-organic chemical vapor deposition using TlF as a thallination source Applied Physics Letters. 71: 1243-1245. DOI: 10.1063/1.119862  0.764
1997 Hinds BJ, McNeely RJ, Chen J, Dias C, Studebaker DL, Marks TJ, Hogan TP, Schindler JL, Kannewurf CR. MOCVD routes to T1-2212/MgO/T1-2212 trilayers - Preliminary observations on growth and microstructural/electrical properties Journal of Alloys and Compounds. 251: 328-331. DOI: 10.1016/S0925-8388(96)02701-6  0.715
1997 Schindler J, Duran C, DiMeo F, Wessels B, Hinds B, McNeely R, Marks T, Kannewurf C. Characteristic doping-dependent properties of HTS cuprate thin films prepared via MOCVD Journal of Alloys and Compounds. 251: 347-350. DOI: 10.1016/S0925-8388(96)02698-9  0.766
1997 Marks TJ, Belot JA, Reedy CJ, McNeely RJ, Studebaker DB, Neumayer DA, Stern CL. MOCVD precursor design issues. Recent advances in the chemistry and vapor pressure characteristics of Ba(hexafluoroacetylacetonate)2·polyether complexes Journal of Alloys and Compounds. 251: 243-248. DOI: 10.1016/S0925-8388(96)02680-1  0.408
1997 Zhang X, Sung Y, Miller D, Hinds B, McNeely R, Studebaker D, Marks T. New structural aspects of Tl2Ba2CaCu2Oy epitaxial thin films grown by MOCVD on LaAlO3 Physica C: Superconductivity. 275: 146-154. DOI: 10.1016/S0921-4534(96)00695-8  0.755
1997 Hinds BJ, McNeely RJ, Studebaker DB, Marks TJ, Hogan TP, Schindler JL, Kannewurf CR, Zhang XF, Miller DJ. Thin films for superconducting electronics: Precursor performance issues, deposition mechanisms, and superconducting phase formation-processing strategies in the growth of Tl2Ba2CaCu2O8 films by metal-organic chemical vapor deposition Journal of Materials Research. 12: 1214-1236.  0.756
1997 McNeely RJ, Belot JA, Hinds BJ, Marks TJ, Schindler JL, Chudzik MP, Kannewurf CR, Zhang XF, Miller DJ. Efficient route to TIBa 2Ca 2Cu 3O 9+x thin films by metal-organic chemical vapor deposition using TIF as a thallination source Applied Physics Letters. 71: 1243-1245.  0.702
1997 Schindler JL, Duran CR, DiMeo F, Wessels BW, Hinds BJ, McNeely RJ, Marks TJ, Kannewurf CR. Characteristic doping-dependent properties of HTS cuprate thin films prepared via MOCVD Journal of Alloys and Compounds. 251: 347-350.  0.653
1997 Zhang XF, Sung YS, Miller DJ, Hinds BJ, McNeely RJ, Studebaker DL, Marks TJ. New structural aspects of Tl2Ba2CaCu2Oy epitaxial thin films grown by MOCVD on LaAlO3 Physica C: Superconductivity and Its Applications. 275: 146-154.  0.717
1995 Hinds BJ, Studebaker DB, Chen J, McNeely RJ, Han B, Schindler JL, Hogan TP, Kannewurf CR, Marks TJ. MOCVD Routes to Tl2Ba2Can-1CunO4+2nSuperconductor and Dielectric Insulator Thin Films Le Journal De Physique Iv. 5: C5-391-C5-406. DOI: 10.1051/Jphyscol:1995546  0.779
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