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Jingxi Sun, Ph.D. - Publications

Affiliations: 
2000 University of Wisconsin, Madison, Madison, WI 
Area:
Chemical Engineering, Electronics and Electrical Engineering, Materials Science Engineering
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15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Li H, Cao F, Guo S, Ning Z, Liu Z, Jia Y, Scudino S, Gemming T, Sun J. Microstructures and properties evolution of spray-deposited Al-Zn-Mg-Cu-Zr alloys with scandium addition Journal of Alloys and Compounds. 691: 482-488. DOI: 10.1016/J.Jallcom.2016.08.255  0.384
2002 Rickert KA, Ellis AB, Himpsel FJ, Sun J, Kuech TF. N-GaN surface treatments for metal contacts studied via x-ray photoemission spectroscopy Applied Physics Letters. 80: 204-206. DOI: 10.1063/1.1430024  0.519
2000 Gu S, Zhang R, Sun J, Zhang L, Kuech TF. The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN Mrs Internet Journal of Nitride Semiconductor Research. 5: 138-144. DOI: 10.1557/S1092578300004191  0.531
2000 Kuech T, Gu S, Wate R, Zhang L, Sun J, Dumesic J, Redwing J. The Chemistry of GaN Growth Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G1.1  0.595
2000 Paulson C, Hawkins B, Sun J, Ellis AB, Mccaughan L, Kuech TF. Photoreflectance near-field scanning optical microscopy Materials Research Society Symposium - Proceedings. 588: 13-17. DOI: 10.1557/Proc-588-13  0.402
2000 Paulson C, Ellis AB, McCaughan L, Hawkins B, Sun J, Kuech TF. Demonstration of near-field scanning photoreflectance spectroscopy Applied Physics Letters. 77: 1943-1945. DOI: 10.1063/1.1312253  0.418
2000 Gu S, Zhang R, Sun J, Zhang L, Kuech TF. Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN Applied Physics Letters. 76: 3454-3456. DOI: 10.1063/1.126675  0.522
2000 Sun J, Rickert KA, Redwing JM, Ellis AB, Himpsel FJ, Kuech TF. p-GaN surface treatments for metal contacts Applied Physics Letters. 76: 415-417. DOI: 10.1063/1.125772  0.593
2000 Sun J, Redwing JM, Kuech TF. Model development of GaN MOVPE growth chemistry for reactor design Journal of Electronic Materials. 29: 2-9. DOI: 10.1007/S11664-000-0085-5  0.621
1999 Sun J, Himpsel FJ, Ellis AB, Kuech TF. In situ surface passivation of GaAs by thermal nitridation using metalorganic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 573: 15-20. DOI: 10.1557/Proc-573-15  0.532
1999 Sun J, Redwing JM, Kuech TF. Comparative study of GaN growth process by MOVPE Materials Research Society Symposium - Proceedings. 572: 463-468. DOI: 10.1557/Proc-572-463  0.6
1999 Sun J, Seo DJ, O'Brien WL, Himpsel FJ, Ellis AB, Kuech TF. Chemical bonding and electronic properties of SeS2-treated GaAs(100) Journal of Applied Physics. 85: 969-977. DOI: 10.1063/1.369217  0.542
1999 Sun J, Redwing JM, Kuech TF. Transport and reaction behaviors of precursors during metalorganic vapor phase epitaxy of gallium nitride Physica Status Solidi (a) Applied Research. 176: 693-698. DOI: 10.1002/(Sici)1521-396X(199911)176:1<693::Aid-Pssa693>3.0.Co;2-Z  0.612
1998 Sun J, Zhang L, Kuech TF. In situ thermal nitridation of GaAs using metalorganic vapor phase epitaxy Journal of Crystal Growth. 195: 711-717. DOI: 10.1016/S0022-0248(98)00599-5  0.549
1997 Sun J, Seo DJ, O'Brien WL, Himpsel FJ, Kuech TF. Chemical Bonding on GaAs (001) Surfaces Passivated Using SeS2 Mrs Proceedings. 484. DOI: 10.1557/Proc-484-589  0.529
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