Sang K. Nam, Ph.D. - Publications

Affiliations: 
2006 University of Houston, Houston, TX, United States 
Area:
Chemical Engineering, Electronics and Electrical Engineering

16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Huang S, Shim S, Nam SK, Kushner MJ. Pattern dependent profile distortion during plasma etching of high aspect ratio features in SiO2 Journal of Vacuum Science & Technology A. 38: 023001. DOI: 10.1116/1.5132800  0.33
2020 Jung J, Barsukov Y, Volynets V, Kim G, Nam SK, Han K, Huang S, Kushner MJ. Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. II. Surface reaction mechanism Journal of Vacuum Science & Technology A. 38: 023008. DOI: 10.1116/1.5125569  0.379
2020 Volynets V, Barsukov Y, Kim G, Jung J, Nam SK, Han K, Huang S, Kushner MJ. Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes Journal of Vacuum Science & Technology A. 38: 023007. DOI: 10.1116/1.5125568  0.404
2020 Qu C, Nam SK, Kushner MJ. Transients using low-high pulsed power in inductively coupled plasmas Plasma Sources Science and Technology. 29: 85006. DOI: 10.1088/1361-6595/Aba113  0.367
2020 Qu C, Lanham SJ, Shannon SC, Nam SK, Kushner MJ. Erratum: Power Matching to Pulsed Inductively Coupled Plasmas [J. Appl. Phys. 127, 133302 (2020)] Journal of Applied Physics. 128: 89901. DOI: 10.1063/5.0023888  0.361
2020 Qu C, Lanham SJ, Shannon SC, Nam SK, Kushner MJ. Power matching to pulsed inductively coupled plasmas Journal of Applied Physics. 127: 133302. DOI: 10.1063/5.0002522  0.412
2019 Huang S, Huard C, Shim S, Nam SK, Song I, Lu S, Kushner MJ. Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation Journal of Vacuum Science & Technology A. 37: 031304. DOI: 10.1116/1.5090606  0.438
2019 Ford K, Peterson DJ, Brandon J, Nam SK, Walker D, Shannon SC. Measurement of localized plasma perturbation with hairpin resonator probes Physics of Plasmas. 26: 013510. DOI: 10.1063/1.5065509  0.379
2018 Huang S, Volynets V, Hamilton JR, Nam SK, Song I, Lu S, Tennyson J, Kushner MJ. Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O2 mixtures Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 36: 021305. DOI: 10.1116/1.5019673  0.45
2017 Barsukov Y, Volynets V, Lee S, Kim G, Lee B, Nam SK, Han K. Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 35: 061310. DOI: 10.1116/1.5004546  0.336
2007 Nam SK, Economou DJ, Donnelly VM. Generation of fast neutral beams by ion neutralization in high-aspect-ratio holes: A particle-in-cell simulation study Ieee Transactions On Plasma Science. 35: 1370-1378. DOI: 10.1109/Tps.2007.906439  0.611
2007 Nam SK, Economou DJ, Donnelly VM. Particle-in-cell simulation of ion beam extraction from a pulsed plasma through a grid Plasma Sources Science and Technology. 16: 90-96. DOI: 10.1088/0963-0252/16/1/012  0.648
2005 Xu L, Vemula SC, Jain M, Nam SK, Donnelly VM, Economou DJ, Ruchhoeft P. Nanopantography: a new method for massively parallel nanopatterning over large areas. Nano Letters. 5: 2563-8. PMID 16351216 DOI: 10.1021/Nl051976I  0.583
2005 Nam SK, Donnelly VM, Economou DJ. Particle-in-cell simulation of ion flow through a hole in contact with plasma Ieee Transactions On Plasma Science. 33: 232-233. DOI: 10.1109/Tps.2005.845109  0.63
2004 Nam SK, Economou DJ. Two-dimensional simulation of a miniaturized inductively coupled plasma reactor Journal of Applied Physics. 95: 2272-2277. DOI: 10.1063/1.1644043  0.615
1999 Nam SK, Shin CB, Economou DJ. Two-dimensional plasma reactor simulation with self-consistent coupling of gas flow with plasma transport Materials Science in Semiconductor Processing. 2: 271-279. DOI: 10.1016/S1369-8001(99)00015-3  0.599
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