Year |
Citation |
Score |
2020 |
Huang S, Shim S, Nam SK, Kushner MJ. Pattern dependent profile distortion during plasma etching of high aspect ratio features in SiO2 Journal of Vacuum Science & Technology A. 38: 023001. DOI: 10.1116/1.5132800 |
0.33 |
|
2020 |
Jung J, Barsukov Y, Volynets V, Kim G, Nam SK, Han K, Huang S, Kushner MJ. Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. II. Surface reaction mechanism Journal of Vacuum Science & Technology A. 38: 023008. DOI: 10.1116/1.5125569 |
0.379 |
|
2020 |
Volynets V, Barsukov Y, Kim G, Jung J, Nam SK, Han K, Huang S, Kushner MJ. Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes Journal of Vacuum Science & Technology A. 38: 023007. DOI: 10.1116/1.5125568 |
0.404 |
|
2020 |
Qu C, Nam SK, Kushner MJ. Transients using low-high pulsed power in inductively coupled plasmas Plasma Sources Science and Technology. 29: 85006. DOI: 10.1088/1361-6595/Aba113 |
0.367 |
|
2020 |
Qu C, Lanham SJ, Shannon SC, Nam SK, Kushner MJ. Erratum: Power Matching to Pulsed Inductively Coupled Plasmas [J. Appl. Phys. 127, 133302 (2020)] Journal of Applied Physics. 128: 89901. DOI: 10.1063/5.0023888 |
0.361 |
|
2020 |
Qu C, Lanham SJ, Shannon SC, Nam SK, Kushner MJ. Power matching to pulsed inductively coupled plasmas Journal of Applied Physics. 127: 133302. DOI: 10.1063/5.0002522 |
0.412 |
|
2019 |
Huang S, Huard C, Shim S, Nam SK, Song I, Lu S, Kushner MJ. Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation Journal of Vacuum Science & Technology A. 37: 031304. DOI: 10.1116/1.5090606 |
0.438 |
|
2019 |
Ford K, Peterson DJ, Brandon J, Nam SK, Walker D, Shannon SC. Measurement of localized plasma perturbation with hairpin resonator probes Physics of Plasmas. 26: 013510. DOI: 10.1063/1.5065509 |
0.379 |
|
2018 |
Huang S, Volynets V, Hamilton JR, Nam SK, Song I, Lu S, Tennyson J, Kushner MJ. Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O2 mixtures Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 36: 021305. DOI: 10.1116/1.5019673 |
0.45 |
|
2017 |
Barsukov Y, Volynets V, Lee S, Kim G, Lee B, Nam SK, Han K. Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 35: 061310. DOI: 10.1116/1.5004546 |
0.336 |
|
2007 |
Nam SK, Economou DJ, Donnelly VM. Generation of fast neutral beams by ion neutralization in high-aspect-ratio holes: A particle-in-cell simulation study Ieee Transactions On Plasma Science. 35: 1370-1378. DOI: 10.1109/Tps.2007.906439 |
0.611 |
|
2007 |
Nam SK, Economou DJ, Donnelly VM. Particle-in-cell simulation of ion beam extraction from a pulsed plasma through a grid Plasma Sources Science and Technology. 16: 90-96. DOI: 10.1088/0963-0252/16/1/012 |
0.648 |
|
2005 |
Xu L, Vemula SC, Jain M, Nam SK, Donnelly VM, Economou DJ, Ruchhoeft P. Nanopantography: a new method for massively parallel nanopatterning over large areas. Nano Letters. 5: 2563-8. PMID 16351216 DOI: 10.1021/Nl051976I |
0.583 |
|
2005 |
Nam SK, Donnelly VM, Economou DJ. Particle-in-cell simulation of ion flow through a hole in contact with plasma Ieee Transactions On Plasma Science. 33: 232-233. DOI: 10.1109/Tps.2005.845109 |
0.63 |
|
2004 |
Nam SK, Economou DJ. Two-dimensional simulation of a miniaturized inductively coupled plasma reactor Journal of Applied Physics. 95: 2272-2277. DOI: 10.1063/1.1644043 |
0.615 |
|
1999 |
Nam SK, Shin CB, Economou DJ. Two-dimensional plasma reactor simulation with self-consistent coupling of gas flow with plasma transport Materials Science in Semiconductor Processing. 2: 271-279. DOI: 10.1016/S1369-8001(99)00015-3 |
0.599 |
|
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