| Year |
Citation |
Score |
| 2020 |
Watkins EB, Kruk I, Majewski J, Allred DD. Oxide structure of air-passivated U-6Nb alloy thin films Journal of Nuclear Materials. 539: 152356. DOI: 10.1016/J.Jnucmat.2020.152356 |
0.336 |
|
| 2019 |
Muhlestein JB, Smith BD, Miles M, Thomas SM, Willey A, Allred DD, Turley RS. YO optical constants between 5 nm and 50 nm. Optics Express. 27: 3324-3336. PMID 30732355 DOI: 10.1364/Oe.27.003324 |
0.385 |
|
| 2019 |
Stewart JC, Shelley MN, Schwartz NR, King SK, Boyce DW, Erikson JW, Allred DD, Colton JS. Optical constants of evaporated amorphous zinc arsenide (Zn3As2) via spectroscopic ellipsometry Optical Materials Express. 9: 4677-4687. DOI: 10.1364/Ome.9.004677 |
0.393 |
|
| 2017 |
He H, Majewski J, Allred DD, Wang P, Wen X, Rector KD. Formation of solid thorium monoxide at near-ambient conditions as observed by neutron reflectometry and interpreted by screened hybrid functional calculations Journal of Nuclear Materials. 487: 288-296. DOI: 10.1016/J.Jnucmat.2016.12.046 |
0.352 |
|
| 2013 |
He H, Andersson DA, Allred DD, Rector KD. Determination of the insulation gap of uranium oxides by spectroscopic ellipsometry and density functional theory Journal of Physical Chemistry C. 117: 16540-16551. DOI: 10.1021/Jp401149M |
0.304 |
|
| 2012 |
He H, Wang P, Allred DD, Majewski J, Wilkerson MP, Rector KD. Characterization of chemical speciation in ultrathin uranium oxide layered films. Analytical Chemistry. 84: 10380-7. PMID 23131069 DOI: 10.1021/Ac302598R |
0.386 |
|
| 2011 |
Pei L, Balls A, Tippets C, Abbott J, Linford MR, Hu J, Madan A, Allred DD, Vanfleet RR, Davis RC. Polymer molded templates for nanostructured amorphous silicon photovoltaics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3554720 |
0.411 |
|
| 2010 |
Brimhall N, Herrick N, Allred DD, Turley RS, Ware M, Peatross J. Characterization of optical constants for uranium from 10 to 47 nm. Applied Optics. 49: 1581-5. PMID 20300153 DOI: 10.1364/Ao.49.001581 |
0.389 |
|
| 2009 |
Brimhall N, Herrick N, Allred DD, Turley RS, Ware M, Peatross J. Measured optical constants of copper from 10 nm to 35 nm. Optics Express. 17: 23873-9. PMID 20052098 DOI: 10.1364/Oe.17.023873 |
0.317 |
|
| 2008 |
Brimhall N, Turner M, Herrick N, Allred DD, Turley RS, Ware M, Peatross J. Extreme-ultraviolet polarimeter utilizing laser-generated high-order harmonics. The Review of Scientific Instruments. 79: 103108. PMID 19044703 DOI: 10.1063/1.2999543 |
0.301 |
|
| 2008 |
Strein E(), Allred D. Eliminating carbon contamination on oxidized Si surfaces using a VUV excimer lamp Thin Solid Films. 517: 1011-1015. DOI: 10.1016/J.Tsf.2008.06.046 |
0.367 |
|
| 2006 |
Evans WR, Barton SC, Clemens M, Allred DD. Understanding DC-bias sputtered thorium oxide thin films useful in EUV optics Proceedings of Spie - the International Society For Optical Engineering. 6317. DOI: 10.1117/12.687499 |
0.388 |
|
| 2006 |
Brimhall NF, Grigg AB, Turley RS, Allred DD. Thorium dioxide thin films in the extreme ultraviolet Proceedings of Spie - the International Society For Optical Engineering. 6317. DOI: 10.1117/12.687201 |
0.377 |
|
| 2006 |
Evans WR, Allred DD. Determining indices of refraction for ThO2 thin films sputtered under different bias voltages from 1.2 to 6.5 eV by spectroscopic ellipsometry Thin Solid Films. 515: 847-853. DOI: 10.1016/J.Tsf.2006.07.045 |
0.34 |
|
| 2006 |
Kannan S, Taylor C, Allred D. PECVD growth of Six:Ge1-x films for high speed devices and MEMS Journal of Non-Crystalline Solids. 352: 1272-1274. DOI: 10.1016/J.Jnoncrysol.2006.01.063 |
0.413 |
|
| 2005 |
Johnson JE, Allred DD, Turley RS, Evans WR, Sandberg RL. Thorium-Based Thin Films as Highly Reflective Mirrors in the EUV Mrs Proceedings. 893. DOI: 10.1557/Proc-0893-Jj05-09 |
0.438 |
|
| 1999 |
Osorio-Saucedo R, Vázquez-López C, Calleja W, Allred DD, Falcony C. A rotating electrochemical cell to prepare porous silicon with different surface structures Thin Solid Films. 338: 100-104. DOI: 10.1016/S0040-6090(98)01006-2 |
0.314 |
|
| 1997 |
Thompson GB, Allred DD. Reactive gas magnetron sputtering of lithium hydride and lithium fluoride thin films. Journal of X-Ray Science and Technology. 7: 159-70. PMID 21307547 DOI: 10.3233/Xst-1997-7207 |
0.445 |
|
| 1996 |
Gonzalez-Hernandez J, Chao BS, Ovshinsky SR, Allred DD. The Structure of W/C (0.15 < γ < 0.8) Multilayers Annealed in Argon or Air. Journal of X-Ray Science and Technology. 6: 1-31. PMID 21307510 DOI: 10.3233/Xst-1996-6101 |
0.359 |
|
| 1995 |
Wang Q, Allred DD, Knight LV. Deconvolution of the Raman spectrum of amorphous carbon Journal of Raman Spectroscopy. 26: 1039-1043. DOI: 10.1002/Jrs.1250261204 |
0.322 |
|
| 1994 |
Cai M, Allred DD, Reyes-Mena A. Raman spectroscopic study of the formation of t‐MoSi2 from Mo/Si multilayers Journal of Vacuum Science and Technology. 12: 1535-1541. DOI: 10.1116/1.579351 |
0.384 |
|
| 1994 |
Ruiz F, Vázquez‐López C, González‐Hernández J, Allred DD, Romero‐Paredes G, Peña‐Sierra R, Torres‐Delgado G. Mesostructure of Photoluminescent Porous Silicon Journal of Vacuum Science and Technology. 12: 2565-2571. DOI: 10.1116/1.579058 |
0.365 |
|
| 1993 |
Davis CB, Allred DD, Reyes-Mena A, González-Hernández J, González O, Hess BC, Allred WP. Photoluminescence and absorption studies of defects in CdTe and ZnxCd1-xTe crystals. Physical Review. B, Condensed Matter. 47: 13363-13369. PMID 10005644 DOI: 10.1103/Physrevb.47.13363 |
0.312 |
|
| 1993 |
Yuan F, Allred DD. Characterization Of Boron Films Prepared By Chemical Vapor Deposition And Their Application In X-Ray Imaging Mrs Proceedings. 306: 189. DOI: 10.1557/Proc-306-189 |
0.373 |
|
| 1993 |
Karain WI, Knight LV, Allred DD, Reyes-Mena A. The use of sharp silicon tips as photocathodes and electron sources for X-ray generation Nanostructured Materials. 3: 419-424. DOI: 10.1016/0965-9773(93)90108-N |
0.305 |
|
| 1992 |
Allred DD, Cai M, Wang Q, Hatch DM, Reyes-Mena A. Raman spectroscopic analysis of mo/si multilayers. Journal of X-Ray Science and Technology. 3: 222-8. PMID 21307563 DOI: 10.1016/0895-3996(92)90013-A |
0.39 |
|
| 1992 |
Gonzalez‐Hernandez J, Chao BS, Pawlik DA, Allred DD, Wang Q. Characterization of as-prepared and annealed W/C multilayer thin films Journal of Vacuum Science and Technology. 10: 145-151. DOI: 10.1116/1.578127 |
0.42 |
|
| 1992 |
Yuan F, Shi Y, Knight LV, Perkins RT, Allred DD. Using thin film stress to produce precision, figured X-ray optics Thin Solid Films. 220: 284-288. DOI: 10.1016/0040-6090(92)90586-Z |
0.424 |
|
| 1991 |
González‐Hernández J, Zelaya O, Mendoza‐Alverez JG, López‐Cruz E, Pawlik DA, Allred DD. Structure and optical characterization of ZnxCd1−xTe thin films prepared by the close spaced vapor transport method Journal of Vacuum Science and Technology. 9: 550-553. DOI: 10.1116/1.577407 |
0.383 |
|
| 1991 |
Chao SS, Pawlik DA, González-Hernández J, Wang Q, Allred DD. The effect of oxygen on the structure of annealed w/c multilayer thin films Solid State Communications. 79: 205-207. DOI: 10.1016/0038-1098(91)90635-9 |
0.414 |
|
| 1990 |
López‐Cruz E, González‐Hernández J, Allred DD, Allred WP. Photoconductive characterization of ZnxCd1−xTe (0≤x≤0.25) single crystal alloys Journal of Vacuum Science and Technology. 8: 1934-1938. DOI: 10.1116/1.576785 |
0.31 |
|
| 1989 |
Shurtleff JK, Allred DD, Perkins RT, Thorne JM. Deposition of Zinc Selenide by Atomic Layer Epitaxy for Multilayer X-ray Optics Mrs Proceedings. 161. DOI: 10.1557/Proc-161-109 |
0.381 |
|
| 1989 |
Allred DD, Wang Q, González-Hernández J. Characterization of Metal/Carbon Multilayers by Raman Spectroscopy Mrs Proceedings. 160: 605. DOI: 10.1557/Proc-160-605 |
0.38 |
|
| 1986 |
Allred DD, González-Hernández J, Nguyen OV. Anneal Induced Changes in Amorphous Semiconductor Multilayers Mrs Proceedings. 77: 569. DOI: 10.1557/Proc-77-569 |
0.401 |
|
| 1986 |
Allred DD, Gonzalez-Hernandez J, Nguyen OV, Martin D, Pawlik D. Raman scattering and x-ray diffraction characterization of amorphous semiconductor multilayer interfaces Journal of Materials Research. 1: 468-475. DOI: 10.1557/Jmr.1986.0468 |
0.324 |
|
| 1985 |
Gonzalez J, Allred DD, Nguyen OV, Martin D, Pawlik D. Raman Scattering And X-Ray Diffraction Characterization Of Amorphous Semiconductor Multilayer Interfaces Mrs Proceedings. 56: 389. DOI: 10.1557/Proc-56-389 |
0.399 |
|
| 1985 |
Allred DD, Jacobson MR, Chain EE. Spectrally selective surfaces by chemical vapor deposition Solar Energy Materials. 12: 87-129. DOI: 10.1016/0165-1633(85)90027-9 |
0.391 |
|
| 1981 |
Allred DD, Booth DC, Appleton BR, Miller PD, Moak CD, Sellschop JPF, White CW, Wintenberg AL. The Hydrogen Content of Multicomponent Amorphous Silicon Alloys by 19F Nuclear Reaction Analysis Ieee Transactions On Nuclear Science. 28: 1838-1840. DOI: 10.1109/Tns.1981.4331534 |
0.408 |
|
| 1981 |
Seraphin BO, Booth DC, Allred DD. Amorphous Silicon In Photothermal Conversion Le Journal De Physique Colloques. 42. DOI: 10.1051/Jphyscol:1981133 |
0.33 |
|
| 1981 |
Randich E, Allred DD. Chemically vapor-deposited ZrB2 as a selective solar absorber☆ Thin Solid Films. 83: 393-398. DOI: 10.1016/0040-6090(81)90646-5 |
0.332 |
|
| 1980 |
Booth DC, Allred DD, Seraphin BO. Retarding crystallization of CVD amorphous silicon by alloying Journal of Non-Crystalline Solids. 213-218. DOI: 10.1016/0022-3093(80)90596-7 |
0.336 |
|
| 1979 |
Janai M, Allred DD, Booth DC, Seraphin BO. Optical properties and structure of amorphous silicon films prepared by CVD Solar Energy Materials. 1: 11-27. DOI: 10.1016/0165-1633(79)90053-4 |
0.438 |
|
| 1979 |
Booth DC, Allred DD, Seraphin BO. Stabilized CVD amorphous silicon for high temperature photothermal solar energy conversion Solar Energy Materials. 2: 107-124. DOI: 10.1016/0165-1633(79)90034-0 |
0.437 |
|
| 1978 |
Clark GJ, White CW, Allred DD, Appleton BR, Koch FB, Magee CW. The application of nuclear reactions for quantitative hydrogen analysis in a variety of different materials problems Nuclear Instruments and Methods. 149: 9-18. DOI: 10.1016/0029-554X(78)90833-9 |
0.345 |
|
| 1977 |
Clark GJ, White CW, Allred DD, Appleton BR, Magee CW, Carlson DE. The use of nuclear reactions and SIMS for quantitative depth profiling of hydrogen in amorphous silicon Applied Physics Letters. 31: 582-585. DOI: 10.1063/1.89787 |
0.357 |
|
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