| Year |
Citation |
Score |
| 2019 |
Zukotynski S, Ng PC, Pindor AJ. Persistent photoconductivity in Si-doped AlxGa. Physical Review Letters. 59: 2810-2813. PMID 10035654 DOI: 10.1103/PhysRevLett.59.2810 |
0.358 |
|
| 2011 |
Liu B, Chen KP, Kherani NP, Kosteski T, Leong KR, Zukotynski S. Self-irradiation enhanced tritium solubility in hydrogenated amorphous and crystalline silicon Journal of Applied Physics. 109: 54902. DOI: 10.1063/1.3549145 |
0.81 |
|
| 2011 |
Saha JK, Bahardoust B, Leong K, Gougam AB, Kherani NP, Zukotynski S. Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system Thin Solid Films. 519: 2863-2866. DOI: 10.1016/J.TSF.2010.12.074 |
0.404 |
|
| 2010 |
O'Brien PG, Chutinan A, Leong K, Kherani NP, Ozin GA, Zukotynski S. Photonic crystal intermediate reflectors for micromorph solar cells: a comparative study. Optics Express. 18: 4478-90. PMID 20389460 DOI: 10.1364/Oe.18.004478 |
0.365 |
|
| 2010 |
Bahardoust B, Chutinan A, Leong K, Gougam AB, Yeghikyan D, Kosteski T, Kherani NP, Zukotynski S. Passivation study of the amorphous–crystalline silicon interface formed using DC saddle‐field glow discharge Physica Status Solidi (a). 207: 539-543. DOI: 10.1002/Pssa.200982803 |
0.781 |
|
| 2009 |
Alizadeh H, Qian L, Kherani NP, Zukotynski S. Sensitization of erbium in silicon oxide by evaporation and thermal oxidation Proceedings of Spie. 7402. DOI: 10.1117/12.826252 |
0.342 |
|
| 2008 |
Alizadeh H, Shams-Kolahi W, Qian L, Kherani NP, Zukotynski S. Room Temperature Photoluminescence from Erbium in Silica by Evaporation and Thermal Oxidation Japanese Journal of Applied Physics. 47: 7211-7215. DOI: 10.1143/Jjap.47.7211 |
0.389 |
|
| 2008 |
Kherani NP, Liu B, Virk K, Kosteski T, Gaspari F, Shmayda WT, Zukotynski S, Chen KP. Hydrogen effusion from tritiated amorphous silicon Journal of Applied Physics. 103: 24906. DOI: 10.1063/1.2831495 |
0.785 |
|
| 2007 |
Ju T, Whitaker J, Zukotynski S, Kherani N, Taylor PC, Stradins P. Metastable Defects in Tritiated Amorphous Silicon Mrs Proceedings. 989. DOI: 10.1557/PROC-0989-A02-04 |
0.461 |
|
| 2007 |
Costea S, Kherani NP, Zukotynski S. Time evolution of charged defect states in tritiated amorphous silicon Journal of Applied Physics. 102: 103715. DOI: 10.1063/1.2803890 |
0.307 |
|
| 2007 |
Costea S, Kherani NP, Zukotynski S. Metastable defect creation in tritiated hydrogenated amorphous silicon and the Staebler–Wronski effect Journal of Materials Science: Materials in Electronics. 18: 175-182. DOI: 10.1007/S10854-007-9184-X |
0.578 |
|
| 2006 |
Leong KR, Mandelis A, Kherani NP, Zukotynski S. Photocarrier Radiometric Lifetime Measurements of Intrinsic Amorphous-Crystalline Silicon Heterostructure Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A06-03 |
0.445 |
|
| 2006 |
Liu B, Chen KP, Kherani NP, Kosteski T, Costea S, Zukotynski S, Antoniazzi AB. Tritiation of amorphous and crystalline silicon using T2 gas Applied Physics Letters. 89: 44104. DOI: 10.1063/1.2234844 |
0.786 |
|
| 2006 |
Johnson EV, Kherani NP, Zukotynski S. Raman scattering characterization of SF-PECVD-grown hydrogenated microcrystalline silicon thin films using growth surface electrical bias Journal of Materials Science: Materials in Electronics. 17: 801-813. DOI: 10.1007/S10854-006-0026-Z |
0.392 |
|
| 2006 |
Johnson EV, Hoogland S, Klem E, Kherani N, Zukotynski S. Physical, electrical, and optical properties of SF-PECVD-grown hydrogenated microcrystalline silicon with growth surface electrical bias Journal of Materials Science: Materials in Electronics. 17: 789-799. DOI: 10.1007/s10854-006-0025-0 |
0.316 |
|
| 2005 |
Johnson E, Kherani NP, Zukotynski S. Dependence of Microcrystalline Silicon Growth on Ion Flux at the Substrate Surface in a Saddle Field PECVD Mrs Proceedings. 862. DOI: 10.1557/PROC-862-A19.6 |
0.322 |
|
| 2005 |
Costea S, Pisana S, Kherani NP, Gaspari F, Kosteski T, Shmayda WT, Zukotynski S. Use of Tritium in the Study of Defects in Amorphous Silicon Fusion Science and Technology. 48: 712-715. DOI: 10.13182/Fst05-A1023 |
0.83 |
|
| 2005 |
Kosteski T, Kherani NP, Shmayda WT, Costea S, Zukotynski S. Nuclear Batteries Using Tritium and Thin Film Hydrogenated Amorphous Silicon Fusion Science and Technology. 48: 700-703. DOI: 10.13182/Fst05-A1020 |
0.753 |
|
| 2005 |
Pisana S, Costea S, Kosteski T, Shmayda WT, Kherani NP, Zukotynski S. Density of states in tritiated amorphous silicon obtained with the constant photocurrent method Journal of Applied Physics. 98: 93705. DOI: 10.1063/1.2123374 |
0.802 |
|
| 2005 |
Pisana S, O’Leary SK, Zukotynski S. Optical properties of hydrogenated amorphous carbon thin films prepared by dc saddle field plasma-enhanced chemical vapor deposition Journal of Non-Crystalline Solids. 351: 736-740. DOI: 10.1016/J.JNONCRYSOL.2005.01.056 |
0.318 |
|
| 2004 |
Pisana S, Costea S, Kosteski T, Kherani NP, Zukotynski S, Shmayda WT. Density of States in Tritiated Amorphous Silicon Measured Using CPM Mrs Proceedings. 836. DOI: 10.1557/Proc-836-L8.9 |
0.747 |
|
| 2004 |
Whitaker J, Viner J, Zukotynski S, Johnson E, Taylor PC, Stradins P. Tritium Induced Defects in Amorphous Silicon Mrs Proceedings. 808. DOI: 10.1557/Proc-808-A2.4 |
0.499 |
|
| 2004 |
Allen T, Yeghikyan D, Leong K, Kherani N, Roes W, Zukotynski S. Microscopic Studies of Dual Phase Amorphous/Microcrystalline Silicon Prepared by the Saddle-Field Glow Discharge Deposition Method with Hydrogen Dilution Microscopy and Microanalysis. 10: 648-649. DOI: 10.1017/S1431927604885829 |
0.366 |
|
| 2003 |
Milostnaya I, Allen T, Gaspari F, Kherani N, Yeghikyan D, Roes W, Kosteski T, Zukotynski S. Electrical and Optical Properties of Amorphous and Microcrystalline Hydrogenated Silicon Films Deposited Using Saddle Field Glow Discharge Mrs Proceedings. 762. DOI: 10.1557/PROC-762-A6.15 |
0.46 |
|
| 2003 |
Allen T, Milostnaya I, Yeghikyan D, Leong K, Gaspari F, Kherani NP, Kosteski T, Zukotynski S. Influence of Hydrogen Dilution on Properties of Silicon Films Prepared by D.C. Saddle-Field Glow-Discharge: Observation of Microcrystallinity Mrs Proceedings. 762. DOI: 10.1557/Proc-762-A6.10 |
0.8 |
|
| 2003 |
Yastrebov SG, Allen T, Ivanov-Omskii VI, Chan V, Zukotynski S. Optical properties of hydrogenated amorphous carbon films deposited from glow discharge plasma Technical Physics Letters. 29: 858-861. DOI: 10.1134/1.1623870 |
0.304 |
|
| 2002 |
Allen T, Milostnaya I, Yeghikyan D, Gaspari F, Kherani NP, Kosteski T, Zukotynski S. Amorphous-Microcrystalline Silicon Films Obtained Using Hydrogen Dilution in a DC Saddle-Field Glow-Discharge Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M5.22 |
0.782 |
|
| 2002 |
Zukotynski S, Gaspari F, Kherani N, Kosteski T, Law K, Shmayda WT, Tan CM. Metastability in tritiated amorphous silicon Journal of Non-Crystalline Solids. 299302: 476-481. DOI: 10.1016/S0022-3093(01)01019-5 |
0.804 |
|
| 2000 |
Kosteski T, Gaspari F, Hum D, Costea S, Zukotynski S, Kherani NP, Shmayda WT. Recombination in Tritiated Amorphous Silicon Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A30.1 |
0.8 |
|
| 2000 |
Costea S, Gaspari F, Kosteski T, Zukotynski S, Kherani NP, Shmayda WT. Modeling of Beta Conductivity in Tritiated Amorphous Silicon Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A27.4 |
0.725 |
|
| 2000 |
Gaspari F, Kosteski T, Zukotynski S, Kherani NP, Shmayda WT. Time evolution of the density of states of tritiated hydrogenated amorphous silicon Philosophical Magazine Part B. 80: 561-569. DOI: 10.1080/13642810008209764 |
0.785 |
|
| 1999 |
Sagnes E, Szurmak J, Manage D, Zukotynski S. Study of the dc saddle-field discharge: Application to methane Journal of Vacuum Science and Technology. 17: 713-720. DOI: 10.1116/1.581694 |
0.301 |
|
| 1999 |
Sidhu LS, Kosteski T, Zukotynski S, Kherani NP. Infrared vibration spectra of hydrogenated, deuterated, and tritiated amorphous silicon Journal of Applied Physics. 85: 2574-2578. DOI: 10.1063/1.369607 |
0.757 |
|
| 1999 |
Sidhu LS, Kosteski T, Zukotynski S, Kherani NP, Shmayda WT. Effect of dangling-bond density on luminescence in tritiated amorphous silicon Applied Physics Letters. 74: 3975-3977. DOI: 10.1063/1.124241 |
0.79 |
|
| 1999 |
Sidhu LS, Zukotynski S. Monohydride clustering in the amorphous silicon matrix Journal of Non-Crystalline Solids. 246: 65-72. DOI: 10.1016/S0022-3093(99)00018-6 |
0.482 |
|
| 1998 |
Kosteski T, Kherani NP, Gaspari F, Zukotynski S, Shmayda WT. Tritiated amorphous silicon films and devices Journal of Vacuum Science and Technology. 16: 893-896. DOI: 10.1116/1.581031 |
0.817 |
|
| 1998 |
Chan WCW, Gaspari F, Allen T, Lim PK, Moreno E, Sagnes E, Manage D, Szurmak J, Zukotynski S. Structural, optical, and electrical properties of doped hydrogenated diamond-like amorphous carbon films deposited using the dc saddle-field glow-discharge technique Journal of Vacuum Science and Technology. 16: 889-892. DOI: 10.1116/1.581030 |
0.453 |
|
| 1997 |
Chan W, Allen T, Gaspari F, Szurmak J, Sagnes E, Zukotynski S. Amorphous Diamond-Like Carbon Films Prepared by Dc Saddle-Field Glow-Discharge Method: Doping with Boron and Phosphorus Mrs Proceedings. 498. DOI: 10.1557/PROC-498-165 |
0.327 |
|
| 1997 |
Sidhu LS, Gaspari F, Zukotynski S. Ion Bombardment and Disorder in Amorphous Silicon Mrs Proceedings. 467. DOI: 10.1557/PROC-467-597 |
0.312 |
|
| 1997 |
Sidhu LS, Kosteski T, Kherani NP, Gaspari F, Zukotynski S, Shmayda W. An infrared and luminescence study of tritiated amorphous silicon Mrs Proceedings. 467: 129. DOI: 10.1557/Proc-467-129 |
0.794 |
|
| 1996 |
O'Leary SK, Zukotynski S, Perz JM, Sidhu LS. Optical Absorption in Amorphous Silicon Mrs Proceedings. 420. DOI: 10.1557/Proc-420-545 |
0.37 |
|
| 1996 |
Sidhu LS, Kosteski T, O'Leary SK, Gaspari F, Zukotynski S, Kherani NP, Shmadya W. Tritium in amorphous silicon Mrs Proceedings. 420: 509. DOI: 10.1557/Proc-420-509 |
0.788 |
|
| 1996 |
Gaspari F, Sidhu LS, O`Leary SK, Zukotynski S. Saddle-field glow-discharge deposition of amorphous semiconductors Mrs Proceedings. 420. DOI: 10.1557/Proc-420-375 |
0.371 |
|
| 1996 |
O'Leary SK, Sidhu LS, Zukotynski S, Perz JM. Optical absorption, disorder, and hydrogen in amorphous silicon Canadian Journal of Physics. 74: 256-259. DOI: 10.1139/P96-870 |
0.369 |
|
| 1996 |
Gaspari F, Kruzelecky RV, Lim PK, Sidhu LS, Zukotynski S. Luminescence in hydrogenated amorphous carbon films grown by dc saddle‐field glow‐discharge decomposition of methane Journal of Applied Physics. 79: 2684-2688. DOI: 10.1063/1.361139 |
0.513 |
|
| 1995 |
Sidhu LS, Gaspari F, O'Leary SK, Zukotynski S. Deuterium Incorporation into Glow-Discharge Deposited Deuterated-Hydrogenated Amorphous Silicon Mrs Proceedings. 377. DOI: 10.1557/Proc-377-87 |
0.576 |
|
| 1995 |
Kheranit N, Kosteski T, Zukotynski S, Shmayda W. Tritiated Amorphous Silicon for Micropower Applications Fusion Technology. 28: 1609-1614. DOI: 10.13182/FST95-A30642 |
0.376 |
|
| 1995 |
Sidhu LS, Zukotynski S, Kruzelecky RV, Thompson DA. Hydrogen incorporation into Si‐doped InP deposited by gas‐source molecular beam epitaxy Journal of Applied Physics. 77: 3378-3381. DOI: 10.1063/1.358626 |
0.543 |
|
| 1993 |
Wang C, Gaspari F, Zukotynski S. Photoluminescence Study of Radiative Recombination in Porous Silicon Mrs Proceedings. 298. DOI: 10.1557/PROC-298-349 |
0.402 |
|
| 1993 |
Xu W, Zukotynski S. Failure of Al ‐ SiO2 ‐ Si MOS Capacitors at High Temperatures Journal of the Electrochemical Society. 140: 2063-2065. DOI: 10.1149/1.2220764 |
0.433 |
|
| 1993 |
Wang C, Perz JM, Gaspari F, Plumb M, Zukotynski S. Photoluminescence study of radiative recombination in porous silicon Applied Physics Letters. 62: 2676-2678. DOI: 10.1063/1.109282 |
0.371 |
|
| 1993 |
Gaspari F, O'Leary S, Zukotynski S, Perz J. The dependence of the dark conductivity of hydrogenated amorphous silicon films on the hydride content Journal of Non-Crystalline Solids. 155: 149-154. DOI: 10.1016/0022-3093(93)91319-X |
0.486 |
|
| 1992 |
O’Leary SK, Zukotynski S, Perz JM. An effective‐mass model of hydrogenated amorphous silicon: A tail state analysis Journal of Applied Physics. 72: 2272-2281. DOI: 10.1063/1.351568 |
0.425 |
|
| 1992 |
Gaspari F, Zukotynski S, Perz JM. Density of states of inhomogeneous hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 143: 241-245. DOI: 10.1016/S0022-3093(05)80572-1 |
0.491 |
|
| 1991 |
Ukah CI, Meh R, Zukotynski S, Kruzelecky RV, Chakrabarti A. Deposition of silicon nitride by glow-discharge decomposition of silane–nitrogen mixtures in a saddle-field plasma Canadian Journal of Physics. 69: 185-191. DOI: 10.1139/p91-030 |
0.464 |
|
| 1991 |
Harry M, Zukotynski S. The use of a direct current saddle‐field plasma for the deposition of hydrogenated amorphous silicon Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 9: 496-500. DOI: 10.1116/1.577395 |
0.384 |
|
| 1991 |
Koo YC, Weatherly GC, Thorpe SJ, Aust KT, Zukotynski S. The effects of annealing on the formation and stability of the microcrystalline phase in neutron irradiated amorphous Si : H thin films Journal of Non-Crystalline Solids. 134: 226-232. DOI: 10.1016/0022-3093(91)90380-O |
0.467 |
|
| 1990 |
Ukah CI, Perz JM, Zukotynski S. Spatially resolved space‐charge density in the hydrogenated amorphous silicon Schottky barrier from surface photovoltage measurements Journal of Applied Physics. 67: 6486-6489. DOI: 10.1063/1.345124 |
0.442 |
|
| 1989 |
Forbes R, Zukotynski S. High‐Temperature Dielectric Breakdown of Silicon Dioxide Films with Aluminum Electrodes Journal of the Electrochemical Society. 136: 736-739. DOI: 10.1149/1.2096721 |
0.421 |
|
| 1989 |
Kruzelecky RV, Zukotynski S, Ukah CI, Gaspari F, Perz JM. The preparation of amorphous Si:H thin films for optoelectronic applications by glow discharge dissociation of SiH4 using a direct‐current saddle‐field plasma chamber Journal of Vacuum Science and Technology. 7: 2632-2638. DOI: 10.1116/1.575765 |
0.535 |
|
| 1989 |
Tan CM, Zukotynski S. Single Wafer Miniature Hall-Effect Keyboard Ieee Transactions On Industrial Electronics. 36: 446-450. DOI: 10.1109/41.31509 |
0.301 |
|
| 1989 |
Ukah CI, Perz JM, Zukotynski S. Surface photovoltage spectroscopy in hydrogenated amorphous silicon Journal of Applied Physics. 65: 3617-3630. DOI: 10.1063/1.342610 |
0.41 |
|
| 1989 |
Leith GA, Zukotynski S, Landheer D, Denhoff MW, Buchanan M. Excess carrier lifetimes in the silicon doping superlattice Applied Physics Letters. 54: 1558-1560. DOI: 10.1063/1.101312 |
0.334 |
|
| 1989 |
Ukah CI, Perz JM, Kruzelecky RV, Zukotynski S. Oxygen traps in evaporated hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 107: 301-308. DOI: 10.1016/0022-3093(89)90476-6 |
0.447 |
|
| 1989 |
Kruzelecky R, Racansky D, Zukotynski S, Gaspari F, Ukah C, Perz J. The preparation of hydrogenated amorphous silicon by plasma-enhanced reactive evaporation Journal of Non-Crystalline Solids. 108: 115-127. DOI: 10.1016/0022-3093(89)90339-6 |
0.387 |
|
| 1988 |
Koo YC, Perrin AR, Aust KT, Zukotynski S. Nucleation in Amorphous Si:H Alloy Mrs Proceedings. 100. DOI: 10.1557/Proc-100-429 |
0.443 |
|
| 1988 |
Koo YC, Perrin R, Aust KT, Zukotynski S, Kruzelecky RV. The effects of the glass substrate on the properties of rf glow discharge amorphous Si:H thin films Journal of Applied Physics. 63: 2443-2445. DOI: 10.1063/1.341015 |
0.448 |
|
| 1988 |
Kruzelecky RV, Racansky D, Zukotynski S, Perz JM. Dependence of optical gap in a-Si:H on bonded hydrogen concentration Journal of Non-Crystalline Solids. 99: 89-96. DOI: 10.1016/0022-3093(88)90460-7 |
0.547 |
|
| 1988 |
Ukah CI, Kruzelecky RV, Racansky D, Zukotynski S, Perez JM. In situ work function measurements in evaporated amorphous silicon Journal of Non-Crystalline Solids. 103: 131-136. DOI: 10.1016/0022-3093(88)90425-5 |
0.307 |
|
| 1988 |
Kruzelecky RV, Racansky D, Zukotynski S, Koo YC, Perz JM. The effect of preparation conditions on the morphology of low-temperature silicon films Journal of Non-Crystalline Solids. 104: 237-248. DOI: 10.1016/0022-3093(88)90394-8 |
0.555 |
|
| 1988 |
Kruzelecky RV, Ukah C, Racansky D, Zukotynski S, Perz JM. Interband optical absorption in amorphous silicon Journal of Non-Crystalline Solids. 103: 234-249. DOI: 10.1016/0022-3093(88)90202-5 |
0.555 |
|
| 1988 |
Kruzelecky RV, Zukotynski S, Perz JM. Morphology and electronic properties of phosphorus-doped hydrogenated amorphous and microcrystalline silicon deposited by DC discharge in SiH4/PH3 Journal of Non-Crystalline Solids. 103: 221-233. DOI: 10.1016/0022-3093(88)90201-3 |
0.49 |
|
| 1986 |
Kruzelecky RV, Racansky D, Zukotynski S, Perz JM, Polk D, Lau WM. Doping of a-Si:H using BF3 Journal of Non-Crystalline Solids. 79: 19-28. DOI: 10.1016/0022-3093(86)90035-9 |
0.538 |
|
| 1985 |
Das SR, Charbonneau S, Williams DF, Webb JB, MacDonald JR, Polk DR, Zukotynski S, Perz J. The relation between microstructure and hydrogen content and evolution for hydrogenated amorphous silicon films prepared by magnetron sputtering Canadian Journal of Physics. 63: 852-858. DOI: 10.1139/P85-138 |
0.443 |
|
| 1984 |
Nakagawa H, Zukotynski S, Reggiani L. On the weak‐field magnetoresistance of holes in Ge and Si Journal of Applied Physics. 56: 1687-1695. DOI: 10.1063/1.334158 |
0.359 |
|
| 1983 |
Jain PK, Kruzélecky RV, Zukotynski S. The density of states in dc glow discharge deposited a-Si: H from Schottky barrier diode admittance measurements Canadian Journal of Physics. 61: 736-743. DOI: 10.1139/P83-093 |
0.324 |
|
| 1982 |
Szadkowski AJ, Kalnitsky A, Ma KB, Zukotynski S. Implications of the change in work function of chromium by the presence of hydrogen on the properties of electrical contact between chromium and hydrogenated amorphous silicon Journal of Applied Physics. 53: 557-558. DOI: 10.1063/1.329918 |
0.41 |
|
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