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April Brown - Publications

Affiliations: 
Electrical and Computer Engineering Duke University, Durham, NC 
Area:
Biochemistry, Electronics and Electrical Engineering, Physical Chemistry
Website:
https://ece.duke.edu/faculty/april-brown
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70 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Collar KN, Li J, Jiao W, Kong W, Brown AS. Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates. Nanotechnology. 29: 035604. PMID 29186010 DOI: 10.1088/1361-6528/Aa9E34  0.645
2017 Collar K, Li J, Jiao W, Guan Y, Losurdo M, Humlicek J, Brown AS. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy Aip Advances. 7: 075016. DOI: 10.1063/1.4986751  0.557
2017 Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy Aip Advances. 7: 035109. DOI: 10.1063/1.4973637  0.646
2016 Li J, Collar K, Jiao W, Kong W, Kuech TF, Babcock SE, Brown A. Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-xBix Applied Physics Letters. 108. DOI: 10.1063/1.4953408  0.67
2015 Giangregorio MM, Jiao W, Bianco GV, Capezzuto P, Brown AS, Bruno G, Losurdo M. Insights into the effects of metal nanostructuring and oxidation on the work function and charge transfer of metal/graphene hybrids. Nanoscale. PMID 26158222 DOI: 10.1039/C5Nr02610E  0.556
2015 Luo G, Yang S, Li J, Arjmand M, Szlufarska I, Brown AS, Kuech TF, Morgan D. First-principles studies on molecular beam epitaxy growth of GaA s1-x B ix Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.035415  0.309
2015 Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4931942  0.648
2015 Kong W, Jiao WY, Li JC, Collar K, Kim TH, Leach JH, Brown AS. Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4927245  0.671
2015 Li J, Forghani K, Guan Y, Jiao W, Kong W, Collar K, Kim TH, Kuech TF, Brown AS. GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation Aip Advances. 5. DOI: 10.1063/1.4922139  0.631
2014 Losurdo M, Yi C, Suvorova A, Rubanov S, Kim TH, Giangregorio MM, Jiao W, Bergmair I, Bruno G, Brown AS. Demonstrating the capability of the high-performance plasmonic gallium-graphene couple. Acs Nano. 8: 3031-41. PMID 24575951 DOI: 10.1021/Nn500472R  0.656
2014 Ahmed MU, Saaem I, Wu PC, Brown AS. Personalized diagnostics and biosensors: a review of the biology and technology needed for personalized medicine. Critical Reviews in Biotechnology. 34: 180-96. PMID 23607309 DOI: 10.3109/07388551.2013.778228  0.386
2014 Kong W, Mohanta A, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy Applied Physics Letters. 105. DOI: 10.1063/1.4896849  0.449
2014 Li J, Kim TH, Forghani K, Jiao W, Kong W, Collar K, Kuech TF, Brown AS. Growth of GaAs1-xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics Journal of Applied Physics. 116. DOI: 10.1063/1.4891874  0.455
2014 Zhong M, Roberts J, Kong W, Brown AS, Steckl AJ. P-type GaN grown by phase shift epitaxy Applied Physics Letters. 104. DOI: 10.1063/1.4861058  0.429
2014 Losurdo M, Bergmair I, Dastmalchi B, Kim TH, Giangregroio MM, Jiao W, Bianco GV, Brown AS, Hingerl K, Bruno G. Graphene as an electron shuttle for silver deoxidation: Removing a key barrier to plasmonics and metamaterials for sers in the visible Advanced Functional Materials. 24: 1864-1878. DOI: 10.1002/Adfm.201303135  0.553
2013 Ahmed MU, Brown AS, Wu PC. Point-of-Care Devices Genomic and Personalized Medicine. 1: 372-380. DOI: 10.1016/B978-0-12-382227-7.00032-X  0.379
2012 Li B, Cheng Y, Liu J, Yi C, Brown AS, Yuan H, Vo-Dinh T, Fischer MC, Warren WS. Direct optical imaging of graphene in vitro by nonlinear femtosecond laser spectral reshaping. Nano Letters. 12: 5936-40. PMID 23101475 DOI: 10.1021/Nl303358P  0.459
2012 Cho E, Brown A, Kuech TF. Chemical characterization of DNA-immobilized InAs surfaces using X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure. Langmuir : the Acs Journal of Surfaces and Colloids. 28: 11890-8. PMID 22809291 DOI: 10.1021/La302313V  0.32
2012 Yi C, Kim TH, Jiao W, Yang Y, Lazarides A, Hingerl K, Bruno G, Brown A, Losurdo M. Evidence of plasmonic coupling in gallium nanoparticles/graphene/SiC. Small (Weinheim An Der Bergstrasse, Germany). 8: 2721-30. PMID 22674808 DOI: 10.1002/Smll.201200694  0.678
2012 Losurdo M, Wu PC, Kim TH, Bruno G, Brown AS. Cysteamine-based functionalization of InAs surfaces: revealing the critical role of oxide interactions in biasing attachment. Langmuir : the Acs Journal of Surfaces and Colloids. 28: 1235-45. PMID 22133105 DOI: 10.1021/La203436R  0.474
2012 Dedigama A, Angelo M, Torrione P, Kim TH, Wolter S, Lampert W, Atewologun A, Edirisoorya M, Collins L, Kuech TF, Losurdo M, Bruno G, Brown A. Hemin-functionalized InAs-based high sensitivity room temperature NO gas sensors Journal of Physical Chemistry C. 116: 826-833. DOI: 10.1021/Jp2086889  0.599
2012 Kim T, Losurdo M, Choi S, Yoon I, Bruno G, Brown A. Real-time studies of In-adlayer during PAMBE of InGaN/GaN MQWs Physica Status Solidi (C). 9: 1036-1039. DOI: 10.1002/Pssc.201100072  0.388
2011 Albella P, Garcia-Cueto B, González F, Moreno F, Wu PC, Kim TH, Brown A, Yang Y, Everitt HO, Videen G. Shape matters: plasmonic nanoparticle shape enhances interaction with dielectric substrate. Nano Letters. 11: 3531-7. PMID 21848270 DOI: 10.1021/Nl201783V  0.529
2011 Wu PC, Kim TH, Suvorova A, Giangregorio M, Saunders M, Bruno G, Brown AS, Losurdo M. GaMg alloy nanoparticles for broadly tunable plasmonics. Small (Weinheim An Der Bergstrasse, Germany). 7: 751-6. PMID 21425461 DOI: 10.1002/Smll.201002064  0.444
2011 Cho E, Wu P, Ahmed M, Brown A, Kuech TF. Characterization of immobilized DNA on sulfur-passivated InAs surfaces Mrs Proceedings. 1301. DOI: 10.1557/Opl.2011.75  0.523
2011 Ruffin PB, Brantley CL, Edwards E, Roberts JK, Chew W, Warren LC, Ashley PR, Everitt HO, Webster E, Foreman JV, Sanghadasa M, Crutcher SH, Temmen MG, Varadan V, Hayduke D, ... ... Brown AS, et al. Nanotechnology research and development for military and industrial applications Proceedings of Spie - the International Society For Optical Engineering. 7980. DOI: 10.1117/12.878970  0.435
2011 Wu PC, Losurdo M, Kim T, Garcia-Cueto B, Moreno F, Bruno G, Brown AS. Ga–Mg Core–Shell Nanosystem for a Novel Full Color Plasmonics The Journal of Physical Chemistry C. 115: 13571-13576. DOI: 10.1021/Jp201423R  0.481
2010 Bruno G, Losurdo M, Kim T, Brown A. Adsorption and desorption kinetics of Ga on GaN(0001): Application of Wolkenstein theory Physical Review B. 82. DOI: 10.1103/Physrevb.82.075326  0.32
2009 Wu PC, Khoury CG, Kim TH, Yang Y, Losurdo M, Bianco GV, Vo-Dinh T, Brown AS, Everitt HO. Demonstration of surface-enhanced Raman scattering by tunable, plasmonic gallium nanoparticles. Journal of the American Chemical Society. 131: 12032-3. PMID 19655747 DOI: 10.1021/Ja903321Z  0.492
2009 Wu PC, Losurdo M, Kim TH, Giangregorio M, Bruno G, Everitt HO, Brown AS. Plasmonic gallium nanoparticles on polar semiconductors: interplay between nanoparticle wetting, localized surface plasmon dynamics, and interface charge. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 924-30. PMID 19105600 DOI: 10.1021/La802678Y  0.483
2009 Losurdo M, Giangregorio MM, Lisco F, Capezzuto P, Bruno G, Wolter SD, Angelo M, Brown A. InAs(100) surfaces cleaning by an As-Free low-temperature 100°C treatment Journal of the Electrochemical Society. 156. DOI: 10.1149/1.3076194  0.567
2009 Choi S, Kim T, Wu P, Brown A, Everitt HO, Losurdo M, Bruno G. Band bending and adsorption/desorption kinetics on N-polar GaN surfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: 107. DOI: 10.1116/1.3054345  0.546
2008 Losurdo M, Wolters SD, Giangregorio MM, Lisco F, Angelo M, Lampert W, Bruno G, Brown A. Interplay Between Surface Chemistry and Optical Behavior of Semiconductor-biomolecule Functionalized Sensing Systems: An Optical Investigation by Spectroscopic Ellipsometry Mrs Proceedings. 1133. DOI: 10.1557/Proc-1133-Aa07-13  0.575
2007 Garcia MA, Losurdo M, Wolter SD, Kim TH, Lampert WV, Bonaventura J, Bruno G, Giangregorio M, Brown A. Functionalization and characterization of InAs and InP surfaces with hemin Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1504-1510. DOI: 10.1116/1.2746337  0.347
2007 Losurdo M, Kim T, Choi S, Wu P, Giangregorio MM, Bruno G, Brown A. Real time optical monitoring of molecular beam epitaxy of InN on SiC substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 1014. DOI: 10.1116/1.2737433  0.59
2007 Wu PC, Losurdo M, Kim T, Choi S, Bruno G, Brown AS. In situ spectroscopic ellipsometry to monitor surface plasmon resonant group-III metals deposited by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 1019. DOI: 10.1116/1.2734163  0.513
2007 Choi S, Kim T, Everitt HO, Brown A, Losurdo M, Bruno G, Moto A. Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 969. DOI: 10.1116/1.2720856  0.356
2007 Zhang W, Yi C, Brown A. Impact of arsenic species (As[sub 2]∕As[sub 4]) on the relaxation and morphology of step-graded InAs[sub x]P[sub 1−x] on InP substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 960. DOI: 10.1116/1.2717197  0.37
2007 Wu PC, Kim T, Brown AS, Losurdo M, Bruno G, Everitt HO. Real-time plasmon resonance tuning of liquid Ga nanoparticles by in situ spectroscopic ellipsometry Applied Physics Letters. 90: 103119. DOI: 10.1063/1.2712508  0.497
2007 Losurdo M, Giangregorio MM, Bruno G, Kim T, Wu P, Choi S, Brown A, Masia F, Capizzi M, Polimeni A. Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy Applied Physics Letters. 90: 011910. DOI: 10.1063/1.2424664  0.579
2006 Choi S, Kim T, Brown A, Everitt HO, Losurdo M, Bruno G, Moto A. Kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces Applied Physics Letters. 89: 181915. DOI: 10.1063/1.2372744  0.331
2006 Losurdo M, Bruno G, Kim T, Choi S, Brown A. Study of the dielectric function of hexagonal InN: Impact of indium clusters and of native oxide Applied Physics Letters. 88: 121928. DOI: 10.1063/1.2190461  0.332
2006 Garcia MA, Wolter SD, Kim TH, Choi S, Baier J, Brown A, Losurdo M, Bruno G. Surface oxide relationships to band bending in GaN Applied Physics Letters. 88. DOI: 10.1063/1.2158701  0.312
2006 Morse M, Wu P, Choi S, Kim T, Brown A, Losurdo M, Bruno G. Structural and optical characterization of GaN heteroepitaxial films on SiC substrates Applied Surface Science. 253: 232-235. DOI: 10.1016/J.Apsusc.2006.05.097  0.537
2006 Kim T, Choi S, Wu P, Brown A, Losurdo M, Giangregorio MM, Bruno G, Moto A. Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy Physica Status Solidi (C). 3: 1583-1586. DOI: 10.1002/Pssc.200565207  0.583
2006 Brown AS, Kim T, Choi S, Wu P, Morse M, Losurdo M, Giangregorio MM, Bruno G, Moto A. Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy Physica Status Solidi (C). 3: 1531-1535. DOI: 10.1002/Pssc.200565150  0.53
2006 Losurdo M, Giangregorio MM, Bruno G, Kim T, Choi S, Brown A. Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation Physica Status Solidi (a). 203: 1607-1611. DOI: 10.1002/Pssa.200565154  0.377
2005 Losurdo M, Giangregorio MM, Bruno G, Kim T, Wu P, Choi S, Morse M, Brown A, Masia F, Polimeni A, Capizzi M. Modification of InN Properties by Interactions with Hydrogen and Nitrogen Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff08-03  0.524
2005 Kim T, Choi S, Morse M, Wu P, Yi C, Brown A, Losurdo M, Giangregorio MM, Bruno G. Impact of unintentional and intentional nitridation of the 6H-SiC(0001)[sub Si] substrate on GaN epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1181. DOI: 10.1116/1.1878997  0.607
2005 Losurdo M, Capezzuto P, Bruno G, Brown A, Kim T, Yi C, Zakharov DN, Liliental-Weber Z. Interfacial reactions during GaN and AiN epitaxy on 4H– and 6H–SiC(0001) Applied Physics Letters. 86: 021920. DOI: 10.1063/1.1852703  0.411
2005 Losurdo M, Giangregorio MM, Capezzuto P, Bruno G, Kim T, Choi S, Brown A. Remote plasma assisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry The European Physical Journal Applied Physics. 31: 159-164. DOI: 10.1051/Epjap:2005056  0.362
2005 Losurdo M, Bruno G, Kim T, Choi S, Brown A, Moto A. Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H–SiC exploiting real time spectroscopic ellipsometry Journal of Crystal Growth. 284: 156-165. DOI: 10.1016/J.Jcrysgro.2005.07.016  0.379
2005 Brown AS, Losurdo M, Kim TH, Giangregorio MM, Choi S, Morse M, Wu P, Capezzuto P, Bruno G. The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE Crystal Research and Technology. 40: 997-1002. DOI: 10.1002/Crat.200410475  0.558
2004 Losurdo M, Giangregorio MM, Bruno G, Brown A, Kim T. Study of the interaction of 4H–SiC and 6H–SiC(0001)Si surfaces with atomic nitrogen Applied Physics Letters. 85: 4034-4036. DOI: 10.1063/1.1814438  0.363
2004 Losurdo M, Bruno G, Brown A, Kim T. Study of the temperature-dependent interaction of 4H–SiC and 6H–SiC surfaces with atomic hydrogen Applied Physics Letters. 84: 4011-4013. DOI: 10.1063/1.1748845  0.334
2003 Wang Y, Wang Z, Shen J, Brown A. Effect of dissimilar anion annealing on structures of InAs/GaAs quantum dots Journal of Crystal Growth. 252: 58-67. DOI: 10.1016/S0022-0248(02)02527-7  0.336
2002 Cheung M, Namkoong G, Furis M, Chen F, Cartwright AN, Doolittle WA, Brown A. Time resolved optical studies of InGaN layers grown on LGO Materials Research Society Symposium - Proceedings. 743: 659-664. DOI: 10.1557/Proc-743-L11.6  0.392
2002 Brown T, Brown A, May G. Anion exchange at the interfaces of mixed anion III–V heterostructures grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 1771. DOI: 10.1116/1.1491988  0.353
2002 Namkoong G, Doolittle WA, Brown AS, Losurdo M, Capezzuto P, Bruno G. Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics Journal of Applied Physics. 91: 2499-2507. DOI: 10.1063/1.1435834  0.313
2001 Wang Y, Wang Z, Brown T, Brown A, May G. Interfacial roughening in lattice-matched GaInP/GaAs heterostructures Thin Solid Films. 397: 162-169. DOI: 10.1016/S0040-6090(01)01420-1  0.359
2000 Lee K, Brown T, Dagnall G, Bicknell-Tassius R, Brown A, May G. Using neural networks to construct models of the molecular beam epitaxy process Ieee Transactions On Semiconductor Manufacturing. 13: 34-45. DOI: 10.1109/66.827338  0.346
2000 Wang YQ, Wang ZL, Brown T, Brown A, May G. Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures Applied Physics Letters. 77: 223-225. DOI: 10.1063/1.126931  0.336
2000 Doolittle WA, Kang S, Brown A. MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications Solid-State Electronics. 44: 229-238. DOI: 10.1016/S0038-1101(99)00228-2  0.338
2000 Wang YQ, Wang ZL, Brown T, Brown A, May G. Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures Journal of Electronic Materials. 29: 1372-1379. DOI: 10.1007/S11664-000-0121-5  0.333
1997 Doolittle WA, Kropewnicki T, Carter-Coman C, Stock S, Kohl P, Jokerst NM, Metzger RA, Kang S, Lee K, May G, Brown AS. Growth of GaN on Lithium Gallate Substrates for Development of a GaN Thin Compliant Substrate Mrs Proceedings. 482. DOI: 10.1557/Proc-482-283  0.302
1987 Palmateer L, Tasker P, Itoh T, Brown A, Wicks G, Eastman L. Microwave characterisation of 1 μm-gate AI0.48In0.52As/Ga0.47In0.53As/InP MODFETs Electronics Letters. 23: 53-55. DOI: 10.1049/El:19870039  0.559
1987 Griem HT, Hsieh KH, D'Haenens IJ, Delaney MJ, Henige JA, Wicks GW, Brown AS. Characterization of strained GaInAs/AlInAs quantum well TEGFETS grown by molecular beam epitaxy Journal of Crystal Growth. 81: 383-390. DOI: 10.1016/0022-0248(87)90421-0  0.546
1986 Brown AS, Itoh T, Wicks G, Eastman LF. Si diffusion in GaInAs‐AlInAs high‐electron‐mobility transistor structures Journal of Applied Physics. 60: 3495-3498. DOI: 10.1063/1.337600  0.59
1985 Brown AS, Palmateer SC, Wicks GW, Eastman LF, Calawa AR. The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE Journal of Electronic Materials. 14: 367-378. DOI: 10.1007/Bf02661228  0.621
1983 Brown AS, Wicks GW, Eastman LF, Palmateer SC. DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF MBE Ga//0//. //4//7In//0//. //5//3As PLANAR DOPED BARRIERS ON InP SUBSTRATES Journal of Vacuum Science &Amp; Technology B: Microelectronics Processing and Phenomena. 2: 194-196. DOI: 10.1116/1.582777  0.616
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