| Year |
Citation |
Score |
| 2019 |
Chevalier P, Amirzhan A, Wang F, Piccardo M, Johnson SG, Capasso F, Everitt HO. Widely tunable compact terahertz gas lasers. Science (New York, N.Y.). 366: 856-860. PMID 31727831 DOI: 10.1126/Science.Aay8683 |
0.32 |
|
| 2019 |
Mohanta A, Simmons JG, Shen G, Kim SM, Kung P, Everitt HO. Al doping in ZnO nanowires enhances ultraviolet emission and suppresses broad defect emission Journal of Luminescence. 211: 264-270. DOI: 10.1016/J.Jlumin.2019.03.049 |
0.362 |
|
| 2019 |
Li X, Everitt HO, Liu J. Confirming nonthermal plasmonic effects enhance CO 2 methanation on Rh/TiO 2 catalysts Nano Research. 12: 1906-1911. DOI: 10.1007/S12274-019-2457-X |
0.307 |
|
| 2017 |
Gutiérrez Y, Ortiz D, Saiz JM, González F, Everitt HO, Moreno F. The UV Plasmonic Behavior of Distorted Rhodium Nanocubes. Nanomaterials (Basel, Switzerland). 7. PMID 29207569 DOI: 10.3390/Nano7120425 |
0.306 |
|
| 2017 |
Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy Aip Advances. 7: 035109. DOI: 10.1063/1.4973637 |
0.366 |
|
| 2017 |
Simmons JG, Reish ME, Foreman JV, Liu J, Everitt HO. How sulfidation of ZnO powders enhances visible fluorescence Journal of Materials Chemistry C. 5: 10770-10776. DOI: 10.1039/C7Tc04047D |
0.348 |
|
| 2016 |
Gutierrez Y, Ortiz D, Sanz JM, Saiz JM, Gonzalez F, Everitt HO, Moreno F. How an oxide shell affects the ultraviolet plasmonic behavior of Ga, Mg, and Al nanostructures. Optics Express. 24: 20621-20631. PMID 27607666 DOI: 10.1364/Oe.24.020621 |
0.302 |
|
| 2016 |
Akyildiz HI, Stano KL, Roberts AT, Everitt HO, Jur JS. Photoluminescence Mechanism and Photocatalytic Activity of Organic-Inorganic Hybrid Materials Formed by Sequential Vapor Infiltration. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 27063955 DOI: 10.1021/Acs.Langmuir.6B00285 |
0.336 |
|
| 2016 |
Reish ME, Zhang Z, Ma S, Harrison I, Everitt HO. How Annealing and Charge Scavengers Affect Visible Emission from ZnO Nanocrystals Journal of Physical Chemistry C. 120: 5108-5113. DOI: 10.1021/Acs.Jpcc.5B12094 |
0.321 |
|
| 2015 |
King NS, Liu L, Yang X, Cerjan B, Everitt HO, Nordlander P, Halas NJ. Fano Resonant Aluminum Nanoclusters for Plasmonic Colorimetric Sensing. Acs Nano. PMID 26426492 DOI: 10.1021/Acsnano.5B04864 |
0.308 |
|
| 2015 |
Knight MW, Coenen T, Yang Y, Brenny BJ, Losurdo M, Brown AS, Everitt HO, Polman A. Gallium plasmonics: deep subwavelength spectroscopic imaging of single and interacting gallium nanoparticles. Acs Nano. 9: 2049-60. PMID 25629392 DOI: 10.1021/Nn5072254 |
0.342 |
|
| 2015 |
Watson AM, Zhang X, Alcaraz de la Osa R, Marcos Sanz J, González F, Moreno F, Finkelstein G, Liu J, Everitt HO. Rhodium nanoparticles for ultraviolet plasmonics. Nano Letters. 15: 1095-100. PMID 25602159 DOI: 10.1021/Nl5040623 |
0.31 |
|
| 2015 |
Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4931942 |
0.317 |
|
| 2014 |
Roberts AT, Binder R, Kwong NH, Golla D, Cormode D, LeRoy BJ, Everitt HO, Sandhu A. Optical characterization of electron-phonon interactions at the saddle point in graphene. Physical Review Letters. 112: 187401. PMID 24856720 DOI: 10.1103/Physrevlett.112.187401 |
0.316 |
|
| 2014 |
AVRUTIN V, HAFIZ SA, ZHANG F, ÖZGÜR Ü, BELLOTTI E, BERTAZZI F, GOANO M, MATULIONIS A, ROBERTS AT, EVERITT HO, MORKOÇ H. Saga of efficiency degradation at high injection in InGaN light emitting diodes Turkish Journal of Physics. 38: 269-313. DOI: 10.3906/Fiz-1407-23 |
0.348 |
|
| 2014 |
Kong W, Mohanta A, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. Room temperature photoluminescence from InxAl(1-x)N films deposited by plasma-assisted molecular beam epitaxy Applied Physics Letters. 105. DOI: 10.1063/1.4896849 |
0.335 |
|
| 2014 |
Yang Y, Akozbek N, Kim TH, Sanz JM, Moreno F, Losurdo M, Brown AS, Everitt HO. Ultraviolet-Visible Plasmonic Properties of Gallium Nanoparticles Investigated by Variable-Angle Spectroscopic and Mueller Matrix Ellipsometry Acs Photonics. 1: 582-589. DOI: 10.1021/Ph500042V |
0.304 |
|
| 2014 |
Mohanta A, Simmons JG, Everitt HO, Shen G, Margaret Kim S, Kung P. Effect of pressure and Al doping on structural and optical properties of ZnO nanowires synthesized by chemical vapor deposition Journal of Luminescence. 146: 470-474. DOI: 10.1016/J.Jlumin.2013.10.028 |
0.342 |
|
| 2013 |
Yang Y, Callahan JM, Kim TH, Brown AS, Everitt HO. Ultraviolet nanoplasmonics: a demonstration of surface-enhanced Raman spectroscopy, fluorescence, and photodegradation using gallium nanoparticles. Nano Letters. 13: 2837-41. PMID 23659187 DOI: 10.1021/Nl401145J |
0.314 |
|
| 2013 |
Simmons JG, Foreman JV, Liu J, Everitt HO. The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities Applied Physics Letters. 103. DOI: 10.1063/1.4829745 |
0.378 |
|
| 2013 |
Roberts AT, Mohanta A, Everitt HO, Leach JH, Van Den Broeck D, Hosalli AM, Paskova T, Bedair SM. Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates Applied Physics Letters. 103. DOI: 10.1063/1.4827536 |
0.399 |
|
| 2013 |
Foreman JV, Simmons JG, Baughman WE, Liu J, Everitt HO. Localized excitons mediate defect emission in ZnO powders Journal of Applied Physics. 113. DOI: 10.1063/1.4798359 |
0.395 |
|
| 2012 |
Knight MW, Liu L, Wang Y, Brown L, Mukherjee S, King NS, Everitt HO, Nordlander P, Halas NJ. Aluminum plasmonic nanoantennas. Nano Letters. 12: 6000-4. PMID 23072330 DOI: 10.1021/Nl303517V |
0.314 |
|
| 2012 |
Mattiucci N, D'Aguanno G, Everitt HO, Foreman JV, Callahan JM, Buncick MC, Bloemer MJ. Ultraviolet surface-enhanced Raman scattering at the plasmonic band edge of a metallic grating. Optics Express. 20: 1868-77. PMID 22274532 DOI: 10.1364/Oe.20.001868 |
0.325 |
|
| 2012 |
D'Aguanno G, Mattiucci N, Butun S, Callahan J, Everitt HO, Aydin K, Bloemer M. UV-SERS Assisted by Nano-Focusing in Plasmonic Gratings with Tapered Slits Frontiers in Optics. DOI: 10.1364/Fio.2012.Ftu3A.68 |
0.304 |
|
| 2012 |
Butler L, Wilbert DS, Baughman W, Balci S, Kung P, Kim SM, Heimbeck MS, Everitt HO. Design, simulation, and characterization of THz metamaterial absorber Proceedings of Spie - the International Society For Optical Engineering. 8363. DOI: 10.1117/12.919625 |
0.301 |
|
| 2011 |
Albella P, Garcia-Cueto B, González F, Moreno F, Wu PC, Kim TH, Brown A, Yang Y, Everitt HO, Videen G. Shape matters: plasmonic nanoparticle shape enhances interaction with dielectric substrate. Nano Letters. 11: 3531-7. PMID 21848270 DOI: 10.1021/Nl201783V |
0.302 |
|
| 2011 |
Chua SL, Caccamise CA, Phillips DJ, Joannopoulos JD, Soljaci? M, Everitt HO, Bravo-Abad J. Spatio-temporal theory of lasing action in optically-pumped rotationally excited molecular gases. Optics Express. 19: 7513-29. PMID 21503059 DOI: 10.1364/Oe.19.007513 |
0.348 |
|
| 2010 |
Foreman JV, Everitt HO, Yang J, McNicholas T, Liu J. Effects of reabsorption and spatial trap distributions on the radiative quantum efficiencies of ZnO Physical Review B. 81: 115318-115318. DOI: 10.1103/Physrevb.81.115318 |
0.389 |
|
| 2010 |
Wellenius P, Smith ER, Leboeuf SM, Everitt HO, Muth JF. Optimal composition of europium gallium oxide thin films for device applications Journal of Applied Physics. 107. DOI: 10.1063/1.3319670 |
0.324 |
|
| 2010 |
Smith ER, Gruber JB, Wellenius P, Muth JF, Everitt HO. Spectra and energy levels of Eu3+ in cubic phase Gd2O3 Physica Status Solidi (B) Basic Research. 247: 1807-1813. DOI: 10.1002/Pssb.200945602 |
0.307 |
|
| 2010 |
Wellenius P, Smith ER, Wu PC, Everitt HO, Muth JF. Effect of oxygen pressure on the structure and luminescence of Eu-doped Gd 2O 3 thin films Physica Status Solidi (a) Applications and Materials Science. 207: 1949-1953. DOI: 10.1002/Pssa.201026071 |
0.3 |
|
| 2009 |
Wu PC, Khoury CG, Kim TH, Yang Y, Losurdo M, Bianco GV, Vo-Dinh T, Brown AS, Everitt HO. Demonstration of surface-enhanced Raman scattering by tunable, plasmonic gallium nanoparticles. Journal of the American Chemical Society. 131: 12032-3. PMID 19655747 DOI: 10.1021/Ja903321Z |
0.312 |
|
| 2009 |
Wu PC, Losurdo M, Kim TH, Giangregorio M, Bruno G, Everitt HO, Brown AS. Plasmonic gallium nanoparticles on polar semiconductors: interplay between nanoparticle wetting, localized surface plasmon dynamics, and interface charge. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 924-30. PMID 19105600 DOI: 10.1021/La802678Y |
0.318 |
|
| 2009 |
Glinka YD, Shahbazyan TV, Everitt HO, Roberts J, Rajagopal P, Cook J, Piner E, Linthicum K. Effect of the surface states on photoluminescence from surface GaN/Al0.2Ga0.8N quantum wells Epl. 87: 47007. DOI: 10.1209/0295-5075/87/47007 |
0.335 |
|
| 2009 |
Phillips DJ, Smith ER, Luo H, Wellinius P, Muth JF, Everitt HO, Foreman JV. The potential of wide band-gap semiconductor materials in laser induced semiconductor switches Proceedings of Spie - the International Society For Optical Engineering. 7311. DOI: 10.1117/12.818741 |
0.323 |
|
| 2009 |
Choi S, Kim T, Wu P, Brown A, Everitt HO, Losurdo M, Bruno G. Band bending and adsorption/desorption kinetics on N-polar GaN surfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: 107. DOI: 10.1116/1.3054345 |
0.662 |
|
| 2009 |
De Lucia FC, Petkie DT, Everitt HO. A double resonance approach to submillimeter/terahertz remote sensing at atmospheric pressure Ieee Journal of Quantum Electronics. 45: 163-170. DOI: 10.1109/Jqe.2008.912473 |
0.31 |
|
| 2009 |
Glinka YD, Everitt HO, Lee DS, Steckl AJ. Effect ofTm3+-induced defects on the photoexcitation energy relaxation in Tm-dopedAlxGa1−xN Physical Review B. 79. DOI: 10.1103/Physrevb.79.113202 |
0.312 |
|
| 2009 |
Glinka YD, Foreman JV, Everitt HO, Lee DS, Steckl AJ. Direct and Indirect Photoluminescence Excitation and Ultraviolet Emission from Tm-doped AlxGa1-xN Journal of Applied Physics. 105: 83509. DOI: 10.1063/1.3098256 |
0.348 |
|
| 2009 |
Li J, Zhang Q, Peng H, Everitt HO, Qin L, Liu J. Diameter-controlled vapor-solid epitaxial growth and properties of aligned ZnO nanowire arrays Journal of Physical Chemistry C. 113: 3950-3954. DOI: 10.1021/Jp8083716 |
0.35 |
|
| 2008 |
Choi S, Kim T, Wolter S, Brown A, Everitt HO, Losurdo M, Bruno G. Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption Physical Review B. 77. DOI: 10.1103/Physrevb.77.115435 |
0.624 |
|
| 2007 |
Choi S, Kim T, Everitt HO, Brown A, Losurdo M, Bruno G, Moto A. Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 969. DOI: 10.1116/1.2720856 |
0.656 |
|
| 2007 |
Stiff-Roberts AD, Zhang W, Xu J, Peng H, Everitt HO. Spin-Cast Deposition of CdSe-CdS Core-Shell Colloidal Quantum Dots on Doped GaAs Substrates: Structural and Optical Characterization Ieee Transactions On Nanotechnology. 6: 413-420. DOI: 10.1109/Tnano.2007.896845 |
0.336 |
|
| 2007 |
Peng H, Lee C, Everitt HO, Munasinghe C, Lee DS, Steckl AJ. Spectroscopic and energy transfer studies of Eu3+ centers in GaN Journal of Applied Physics. 102: 073520. DOI: 10.1063/1.2783893 |
0.334 |
|
| 2007 |
Ni X, Özgür Ü, Morkoç H, Liliental-Weber Z, Everitt HO. Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition Journal of Applied Physics. 102: 053506. DOI: 10.1063/1.2773692 |
0.315 |
|
| 2007 |
Foreman JV, Everitt HO, Yang J, Liu J. Influence of temperature and photoexcitation density on the quantum efficiency of defect emission in ZnO powders Applied Physics Letters. 91: 11902. DOI: 10.1063/1.2753540 |
0.366 |
|
| 2007 |
Wu PC, Kim T, Brown AS, Losurdo M, Bruno G, Everitt HO. Real-time plasmon resonance tuning of liquid Ga nanoparticles by in situ spectroscopic ellipsometry Applied Physics Letters. 90: 103119. DOI: 10.1063/1.2712508 |
0.342 |
|
| 2006 |
Foreman JV, Li J, Peng H, Choi S, Everitt HO, Liu J. Time-resolved investigation of bright visible wavelength luminescence from sulfur-doped ZnO nanowires and micropowders. Nano Letters. 6: 1126-30. PMID 16771566 DOI: 10.1021/Nl060204Z |
0.685 |
|
| 2006 |
Özgür Ü, Fu Y, Litton CW, Moon YT, Yun F, Everitt HO, Morkoç H. Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates Materials Science Forum. 1505-1508. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1505 |
0.324 |
|
| 2006 |
Avrutin V, Ozgur U, Izyumskaya N, Chevtchenko S, Leach J, Moore JC, Baski AA, Everitt HO, Tsen K, Ruterana P, Morkoc H. Morphology and Optical Properties of ZnO Nanorods Grown by Catalyst-assisted Vapor Transport on Various Substrates Mrs Proceedings. 963. DOI: 10.1557/Proc-0963-Q15-20 |
0.344 |
|
| 2006 |
Özgür Ü, Ni X, Fu Y, Morkoç H, Everitt HO. Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN Applied Physics Letters. 89: 262117. DOI: 10.1063/1.2424677 |
0.353 |
|
| 2006 |
Choi S, Kim T, Brown A, Everitt HO, Losurdo M, Bruno G, Moto A. Kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces Applied Physics Letters. 89: 181915. DOI: 10.1063/1.2372744 |
0.648 |
|
| 2006 |
Porter HL, Muth JF, Narayan J, Foreman JV, Everitt HO. Photoluminescence study of ZnO films codoped with nitrogen and tellurium Journal of Applied Physics. 100. DOI: 10.1063/1.2372312 |
0.322 |
|
| 2006 |
Gollakota P, Dhawan A, Wellenius P, Lunardi LM, Muth JF, Saripalli YN, Peng HY, Everitt HO. Optical characterization of Eu-doped Β-Ga 2O 3 thin films Applied Physics Letters. 88. DOI: 10.1063/1.2208368 |
0.354 |
|
| 2005 |
Foreman JV, Peng H, Choi S, Everitt HO, Li J, Liu J. Bright, Eye-matched Visible Emission from ZnO Nanowires Frontiers in Optics. DOI: 10.1364/Fio.2005.Ftuf4 |
0.669 |
|
| 2005 |
Peng H, Everitt HO, Munasinghe C, Lee DS, Steckl AJ. Relaxation Dynamics in Rare Earth-Doped GaN Frontiers in Optics. DOI: 10.1364/Fio.2005.Ftuf2 |
0.347 |
|
| 2005 |
Neogi A, Everitt H, Morkoç H, Kuroda T, Tackeuchi A. Size dependence of carrier recombination efficiency in GaN quantum dots Ieee Transactions On Nanotechnology. 4: 297-299. DOI: 10.1109/Tnano.2004.834170 |
0.354 |
|
| 2005 |
Özgür Ü, Fu Y, Moon YT, Yun F, Morkoç H, Everitt HO, Park SS, Lee KY. Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates Applied Physics Letters. 86: 232106. DOI: 10.1063/1.1944903 |
0.346 |
|
| 2005 |
Özgür Ü, Fu Y, Moon YT, Yun F, Morkoç H, Everitt HO. Increased carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network layers Journal of Applied Physics. 97: 103704. DOI: 10.1063/1.1894583 |
0.336 |
|
| 2005 |
Cook BP, Everitt HO, Avrutsky I, Osinsky A, Cai A, Muth JF. Refractive indices of ZnSiN 2 on r-plane sapphire Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1865325 |
0.302 |
|
| 2005 |
Peng HY, Lee CW, Everitt HO, Lee DS, Steckl AJ, Zavada JM. Effect of optical excitation energy on the red luminescence of Eu3+ in GaN Applied Physics Letters. 86: 51110. DOI: 10.1063/1.1861132 |
0.34 |
|
| 2005 |
Tsen K, Liang W, Ferry D, Lu H, Schaff WJ, Özgür Ü, Fu Y, Moon Y, Yun F, Morkoç H, Everitt H. Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors Superlattices and Microstructures. 38: 77-114. DOI: 10.1016/J.Spmi.2005.04.004 |
0.402 |
|
| 2004 |
Muth J, Cai A, Osinsky A, Everitt H, Cook B, Avrutsky I. Optical Properties of II-IV-N2 Semiconductors Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.45 |
0.32 |
|
| 2004 |
Ozgur U, Liu C, Cho S, Morkoç H, Foreman J, Everitt HO. Ultrafast carrier relaxation in bulk and epitaxial ZnO Frontiers in Optics. DOI: 10.1364/Fio.2004.Jwa15 |
0.348 |
|
| 2004 |
Teke A, Özgür Ü, Doğan S, Gu X, Morkoç H, Nemeth B, Nause J, Everitt HO. Excitonic fine structure and recombination dynamics in single-crystallineZnO Physical Review B. 70. DOI: 10.1103/Physrevb.70.195207 |
0.364 |
|
| 2004 |
Lee C, Everitt HO, Lee DS, Steckl AJ, Zavada JM. Temperature dependence of energy transfer mechanisms in Eu-doped GaN Journal of Applied Physics. 95: 7717-7724. DOI: 10.1063/1.1738529 |
0.334 |
|
| 2004 |
Özgür Ü, Teke A, Liu C, Cho S, Morkoç H, Everitt HO. Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films Applied Physics Letters. 84: 3223-3225. DOI: 10.1063/1.1713034 |
0.727 |
|
| 2003 |
Lee C, Everitt HO, Zavada JM, Steckl AJ. Temperature dependent visible photoluminescence of Eu-doped GaN on silicon Frontiers in Optics. DOI: 10.1364/Fio.2003.Wff4 |
0.319 |
|
| 2003 |
Ozgur U, Choi S, Everitt HO, He L, Morkoc H. Ultrafast carrier relaxation and stimulated emission in AlGaN/GaN multiple quantum wells Frontiers in Optics. DOI: 10.1364/Fio.2003.Thaa1 |
0.67 |
|
| 2003 |
Neogi A, Everitt H, Morkoç H, Kuroda T, Tackeuchi A. Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy Ieee Transactions On Nanotechnology. 2: 10-14. DOI: 10.1109/Tnano.2003.808513 |
0.356 |
|
| 2003 |
Özgür Ü, Everitt HO. Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and anIn0.07Ga0.93N/In0.12Ga0.88Nmultiple quantum well Physical Review B. 67. DOI: 10.1103/Physrevb.67.155308 |
0.739 |
|
| 2003 |
Özgür Ü, Everitt HO, Keller S, DenBaars SP. Stimulated emission and ultrafast carrier relaxation in AlGaN'GaN multiple quantum wells Applied Physics Letters. 82: 1416-1418. DOI: 10.1063/1.1581385 |
0.396 |
|
| 2002 |
Neogi A, Lee C, Everitt HO, Kuroda T, Tackeuchi A, Yablonovitch E. Optical Devices: Enhancement of Spontaneous Emission Rate by Resonant Surface Plasmon Coupling Optics and Photonics News. 13: 38. DOI: 10.1364/Opn.13.12.000038 |
0.313 |
|
| 2002 |
Neogi A, Lee CW, Everitt HO, Kuroda T, Tackeuchi A, Yablonovitch E. Enhancement of spontaneous emission rate by resonant surface plasmon coupling Optics and Photonics News. 13: 38. DOI: 10.1364/Opn.13.12.000038 |
0.392 |
|
| 2002 |
Neogi A, Lee CW, Everitt HO, Kuroda T, Tackeuchi A, Yablonovitch E. Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling Physical Review B - Condensed Matter and Materials Physics. 66: 1533051-1533054. DOI: 10.1103/Physrevb.66.153305 |
0.385 |
|
| 2001 |
Ozgür U, Lee CW, Everitt HO. Control of coherent acoustic phonons in semiconductor quantum wells. Physical Review Letters. 86: 5604-7. PMID 11415312 DOI: 10.1103/Physrevlett.86.5604 |
0.716 |
|
| 2001 |
Özgür Ü, Lee C, Everitt HO. Control of coherent acoustic phonons Optics & Photonics News. 12: 66-66. DOI: 10.1364/Opn.12.12.000066 |
0.684 |
|
| 2001 |
Özgür Ü, Webb-Wood G, Everitt HO, Yun F, Morkoç H. Systematic measurement of AlxGa1−xN refractive indices Applied Physics Letters. 79: 4103-4105. DOI: 10.1063/1.1426270 |
0.316 |
|
| 2001 |
Webb-Wood G, �zg�r �, Everitt H, Yun F, Morko� H. Measurement of AlxGa1-xN Refractive Indices Physica Status Solidi (a). 188: 793-797. DOI: 10.1002/1521-396X(200112)188:2<793::Aid-Pssa793>3.0.Co;2-S |
0.314 |
|
| 2001 |
Özgür Ü, Lee C-, Everitt HO. Temperature dependence and reflection of coherent acoustic phonons in InGaN multiple quantum wells Physica Status Solidi B-Basic Solid State Physics. 228: 85-89. DOI: 10.1002/1521-3951(200111)228:1<85::Aid-Pssb85>3.0.Co;2-S |
0.721 |
|
| 2000 |
Özgür Ü, Bergmann MJ, Casey HC, Everitt HO, Abare AC, Keller S, DenBaars SP. Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells Applied Physics Letters. 77: 109-111. DOI: 10.1063/1.126893 |
0.402 |
|
| 2000 |
Teng CW, Muth JF, Özgür U, Bergmann MJ, Everitt HO, Sharma AK, Jin C, Narayan J. Refractive indices and absorption coefficients of MgxZn1-xO alloys Applied Physics Letters. 76: 979-981. DOI: 10.1063/1.125912 |
0.35 |
|
| 1999 |
Bergmann MJ, Özgür Ü, Casey HC, Everitt HO, Muth JF. Ordinary and extraordinary refractive indices for AlxGa1−xN epitaxial layers Applied Physics Letters. 75: 67-69. DOI: 10.1063/1.124278 |
0.692 |
|
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