| Year |
Citation |
Score |
| 2016 |
McNamara JD, Phumisithikul KL, Baski AA, Marini J, Shahedipour-Sandvik F, Das S, Reshchikov MA. Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching Journal of Applied Physics. 120: 155304. DOI: 10.1063/1.4964805 |
0.522 |
|
| 2015 |
Ferguson JD, Reshchikov MA, Baski AA, Hite JK, Mastro MA, Eddy CR. Determination of GaN polarity on periodically oriented surfaces Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33: 011206. DOI: 10.1116/1.4904742 |
0.81 |
|
| 2014 |
McNamara JD, Foussekis M, Baski AA, Reshchikov MA. Low-temperature surface photovoltage in p- type GaN Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4840376 |
0.803 |
|
| 2014 |
Mcnamara JD, Baski AA, Reshchikov MA. Temperature-dependent Kelvin probe studies on GaN from 80 to 600 K Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 726-729. DOI: 10.1002/Pssc.201300553 |
0.45 |
|
| 2013 |
Mcnamara JD, Foussekis MA, Baski AA, Li X, Avrutin V, Morkoç H, Leach JH, Paskova T, Udwary K, Preble E, Reshchikov MA. Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 536-539. DOI: 10.1002/Pssc.201200662 |
0.838 |
|
| 2012 |
Ye D, Moussa S, Ferguson JD, Baski AA, El-Shall MS. Highly efficient electron field emission from graphene oxide sheets supported by nickel nanotip arrays. Nano Letters. 12: 1265-8. PMID 22288579 DOI: 10.1021/Nl203742S |
0.736 |
|
| 2012 |
McNamara JD, Ferguson JD, Foussekis M, Ruchala I, Reshchikov MA, Baski AA, Liu H, Avrutin V, Morkoç H. Surface characterization of Ga-doped ZnO layers Materials Research Society Symposium Proceedings. 1315: 77-82. DOI: 10.1557/Opl.2011.722 |
0.772 |
|
| 2012 |
McNamara JD, Foussekis M, Liu H, Morkoç H, Reshchikov MA, Baski AA. Temperature dependent behavior of the SPV for n-type GaN Proceedings of Spie - the International Society For Optical Engineering. 8262. DOI: 10.1117/12.910289 |
0.814 |
|
| 2012 |
Foussekis M, Ferguson JD, McNamara JD, Baski AA, Reshchikov MA. Effects of polarity and surface treatment on Ga- and N-polar bulk GaN Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4751276 |
0.791 |
|
| 2012 |
Foussekis M, McNamara JD, Baski AA, Reshchikov MA. Temperature-dependent Kelvin probe measurements of band bending in p-type GaN Applied Physics Letters. 101. DOI: 10.1063/1.4747203 |
0.782 |
|
| 2011 |
Foussekis M, Ni X, Morkoç H, Reshchikov MA, Baski AA. Kelvin probe measurements of p-type GaN Proceedings of Spie. 7939. DOI: 10.1117/12.876166 |
0.79 |
|
| 2011 |
Foussekis M, Baski AA, Reshchikov MA. Comparison of surface photovoltage behavior for n-type versus p-type GaN Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 41205. DOI: 10.1116/1.3605299 |
0.82 |
|
| 2011 |
Foussekis MA, Baski AA, Reshchikov MA. Electrical and optical properties of GaN studied by surface photovoltage and photoluminescence Physica Status Solidi (C). 8: 2148-2150. DOI: 10.1002/Pssc.201000946 |
0.823 |
|
| 2010 |
Reshchikov MA, Foussekis M, Baski AA. Surface photovoltage in undoped n-type GaN Journal of Applied Physics. 107: 113535. DOI: 10.1063/1.3430979 |
0.828 |
|
| 2009 |
Ferguson JD, Foussekis MA, Ruchala MD, Moore JC, Reshchikov MA, Baski AA. Manipulation of Surface Charge on GaN Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I04-01 |
0.789 |
|
| 2009 |
Ni X, Wu M, Lee J, Li X, Baski AA, Özgür Ü, Morkoç H. Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition Applied Physics Letters. 95: 111102. DOI: 10.1063/1.3225157 |
0.343 |
|
| 2009 |
Ni X, Lee J, Wu M, Li X, Shimada R, Özgür U, Baski AA, Morko̧ H, Paskova T, Mulholland G, Evans KR. Internal quantum efficiency of c -plane InGaN and m -plane InGaN on Si and GaN Applied Physics Letters. 95. DOI: 10.1063/1.3224192 |
0.318 |
|
| 2009 |
Moore JC, Kenny SM, Baird CS, Morkoç H, Baski AA. Electronic behavior of the Zn- and O-polar ZnO surfaces studied using conductive atomic force microscopy Journal of Applied Physics. 105: 116102. DOI: 10.1063/1.3132799 |
0.517 |
|
| 2009 |
Foussekis M, Baski AA, Reshchikov MA. Photoadsorption and photodesorption for GaN Applied Physics Letters. 94: 162116. DOI: 10.1063/1.3122934 |
0.829 |
|
| 2009 |
Wingfield C, Baski A, Bertino MF, Leventis N, Mohite DP, Lu H. Fabrication of sol-gel materials with anisotropic physical properties by photo-cross-linking Chemistry of Materials. 21: 2108-2114. DOI: 10.1021/Cm803374B |
0.325 |
|
| 2009 |
Foussekis M, Ferguson J, Baski A, Morkoç H, Reshchikov M. Role of the surface in the electrical and optical properties of GaN Physica B: Condensed Matter. 404: 4892-4895. DOI: 10.1016/J.Physb.2009.08.230 |
0.766 |
|
| 2007 |
Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA. Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer. Journal of Nanoscience and Nanotechnology. 7: 2889-93. PMID 17685312 DOI: 10.1166/Jnn.2007.607 |
0.33 |
|
| 2007 |
Moore JC, Skrobiszewski JL, Baski AA. Sublimation behavior of SiO2 from low- and high-index silicon surfaces Journal of Vacuum Science and Technology. 25: 812-815. DOI: 10.1116/1.2748798 |
0.461 |
|
| 2007 |
Chevtchenko SA, Reshchikov MA, Fan Q, Ni X, Moon YT, Baski AA, Morkoç H. Study of SiNx and SiO2 passivation of GaN surfaces Journal of Applied Physics. 101: 113709. DOI: 10.1063/1.2740324 |
0.604 |
|
| 2007 |
Ni X, Özgür Ü, Baski AA, Morkoç H, Zhou L, Smith DJ, Tran CA. Epitaxial lateral overgrowth of (112¯2) semipolar GaN on (11¯00) m-plane sapphire by metalorganic chemical vapor deposition Applied Physics Letters. 90: 182109. DOI: 10.1063/1.2735558 |
0.393 |
|
| 2007 |
Moore JC, Kasliwal V, Baski AA, Ni X, Özgür Ü, Morkoç H. Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth Applied Physics Letters. 90: 011913. DOI: 10.1063/1.2429901 |
0.445 |
|
| 2006 |
Chevtchenko S, Fan Q, Litton CW, Baski AA, Morkoç H. Effects of rapid thermal annealing treatment on the surface band bending of n-type GaN studied by surface potential electric force microscopy Materials Science Forum. 1529-1532. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1529 |
0.544 |
|
| 2006 |
Avrutin V, Ozgur U, Izyumskaya N, Chevtchenko S, Leach J, Moore JC, Baski AA, Everitt HO, Tsen K, Ruterana P, Morkoc H. Morphology and Optical Properties of ZnO Nanorods Grown by Catalyst-assisted Vapor Transport on Various Substrates Mrs Proceedings. 963. DOI: 10.1557/Proc-0963-Q15-20 |
0.407 |
|
| 2006 |
Sabuktagin S, Moon Y, Dogan S, Baski AA, Morkoc H. Observation of surface charging at the edge of a Schottky contact Ieee Electron Device Letters. 27: 211-213. DOI: 10.1109/Led.2006.871177 |
0.545 |
|
| 2006 |
Ni X, Özgür Ü, Fu Y, Biyikli N, Xie J, Baski AA, Morkoç H, Liliental-Weber Z. Defect reduction in (112¯0) a-plane GaN by two-stage epitaxial lateral overgrowth Applied Physics Letters. 89: 262105. DOI: 10.1063/1.2423328 |
0.36 |
|
| 2006 |
Chevtchenko SA, Moore JC, Özgür Ü, Gu X, Baski AA, Morkoç H, Nemeth B, Nause JE. Comparative study of the (0001) and (0001¯) surfaces of ZnO Applied Physics Letters. 89: 182111. DOI: 10.1063/1.2378589 |
0.587 |
|
| 2006 |
Chevtchenko S, Ni X, Fan Q, Baski AA, Morkoç H. Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy Applied Physics Letters. 88: 122104. DOI: 10.1063/1.2188589 |
0.562 |
|
| 2005 |
Chevtchenko S, Reshchikov MA, Zhu K, Moon Y, Baski AA, Morkoç H. Effects of GaN passivation with SiO2 and SiNx studied by photoluminescence and surface potential electric force microscopy Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff23-09 |
0.587 |
|
| 2005 |
Morris E, Dickinson JW, Willis ML, Baski AA. Gadolinium nanowire growth on high-index silicon surfaces Clusters and Nano-Assemblies: Physical and Biological Systems: Richmond, Virginia, U.S.a., 10-13 November, 2003. 175-180. DOI: 10.1142/9789812701879_0020 |
0.344 |
|
| 2005 |
Dong Y, Feenstra RM, Greve DW, Moore JC, Sievert MD, Baski AA. Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1890482 |
0.377 |
|
| 2005 |
Sabuktagin S, Doğan S, Baski AA, Morkoç H. Surface charging and current collapse in an AlGaN∕GaN heterostructure field effect transistor Applied Physics Letters. 86: 083506. DOI: 10.1063/1.1867553 |
0.528 |
|
| 2005 |
Reshchikov MA, Sabuktagin S, Johnstone DK, Baski AA, Morkoç H. Transient photovoltage in GaN Physica Status Solidi (C). 2: 2813-2816. DOI: 10.1002/Pssc.200461436 |
0.527 |
|
| 2004 |
Skrobiszewski JL, Moore JC, Dickinson JW, Baski AA. Scanning tunneling microscopy studies of oxide growth and etching on Si(5 5 12) Journal of Vacuum Science and Technology. 22: 1667-1670. DOI: 10.1116/1.1760750 |
0.46 |
|
| 2004 |
Doğan S, Johnstone D, Yun F, Sabuktagin S, Leach J, Baski AA, Morkoç H, Li G, Ganguly B. The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy Applied Physics Letters. 85: 1547-1549. DOI: 10.1063/1.1786632 |
0.384 |
|
| 2004 |
Spradlin J, Doǧan S, Xie J, Molnar R, Baski AA, Morkoç H. Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy Applied Physics Letters. 84: 4150-4152. DOI: 10.1063/1.1751609 |
0.348 |
|
| 2004 |
Dickinson JW, Moore JC, Baski AA. Au-induced faceting of the Si(5 5 12) surface Surface Science. 561: 193-199. DOI: 10.1016/J.Susc.2004.05.013 |
0.488 |
|
| 2003 |
He L, Xie J, Yun F, Baski AA, Morkoç H. GaN layers re-grown on etched GaN templates by plasma assisted molecular beam epitaxy Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.64 |
0.397 |
|
| 2003 |
Woodworth PH, Moore JC, Baski AA. Scanning tunneling microscopy studies of the Cu:Si(5 5 12) system Journal of Vacuum Science and Technology. 21: 1332-1335. DOI: 10.1116/1.1564041 |
0.391 |
|
| 2003 |
Pomarico AA, Huang D, Dickinson J, Baski AA, Cingolani R, Morkoç H, Molnar R. Current mapping of GaN films by conductive atomic force microscopy Applied Physics Letters. 82: 1890-1892. DOI: 10.1063/1.1563054 |
0.39 |
|
| 2003 |
Moore JC, Woodworth PH, Skrobiszewski JL, Baski AA. Oxygen etching of Si(5512) and related surfaces Surface Science. 711-715. DOI: 10.1016/S0039-6028(03)00145-6 |
0.463 |
|
| 2002 |
Huang D, Reshchikov MA, Visconti P, Yun F, Baski AA, King T, Morkoç H, Jasinski J, Liliental-Weber Z, Litton CW. Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 2256. DOI: 10.1116/1.1518969 |
0.4 |
|
| 2002 |
Huang D, Reshchikov MA, Yun F, King T, Baski AA, Morkoç H. Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy Applied Physics Letters. 80: 216-218. DOI: 10.1063/1.1432445 |
0.325 |
|
| 2001 |
Baski AA, Jones KM, Saoud KM. STM studies of 1-D noble metal growth on silicon. Ultramicroscopy. 86: 23-30. PMID 11215627 DOI: 10.1016/S0304-3991(00)00083-8 |
0.355 |
|
| 2001 |
Yun F, Visconti P, Jones KM, Baski AA, Morkoç H, Passaseo A, Piscopiello E, Catalano M, Cingolani R. Characterization of Inversion Domains in GaN by Electric Force Microscopy in Conjunction with Transmission Electron Microscopy and Wet Chemical Etching Mrs Proceedings. 680. DOI: 10.1557/Proc-680-E4.8 |
0.439 |
|
| 2001 |
Rinaldi R, Cingolani R, Jones KM, Baski AA, Morkoc H, Di Carlo A, Widany J, Della Sala F, Lugli P. Scanning tunneling current-voltage spectroscopy on poly(p-phenylene vinylene) films: A nanoscale probe for the electronic conduction Physical Review B. 63. DOI: 10.1103/Physrevb.63.075311 |
0.316 |
|
| 2001 |
Huang D, Visconti P, Jones KM, Reshchikov MA, Yun F, Baski AA, King T, Morkoç H. Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy Applied Physics Letters. 78: 4145-4147. DOI: 10.1063/1.1380399 |
0.399 |
|
| 2001 |
Jones KM, Visconti P, Yun F, Baski AA, Morkoç H. Investigation of inversion domains in GaN by electric-force microscopy Applied Physics Letters. 78: 2497-2499. DOI: 10.1063/1.1358359 |
0.456 |
|
| 2001 |
Baski AA, Saoud K. Au-Induced Faceting of Si(5 5 12) Journal of Cluster Science. 12: 527-535. DOI: 10.1023/A:1012835615335 |
0.359 |
|
| 2001 |
Baski AA, Saoud KM, Jones KM. 1-D nanostructures grown on the Si(5 5 12) surface Applied Surface Science. 182: 216-222. DOI: 10.1016/S0169-4332(01)00412-3 |
0.465 |
|
| 2001 |
Baski A, Erwin S, Turner M, Jones K, Dickinson J, Carlisle J. Morphology and electronic structure of the Ca/Si(111) system Surface Science. 476: 22-34. DOI: 10.1016/S0039-6028(00)01112-2 |
0.348 |
|
| 2001 |
Huang D, Visconti P, Reshchikov M, Yun F, King T, Baski A, Litton C, Jasinski J, Liliental-Weber Z, Morko� H. Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers Physica Status Solidi (a). 188: 571-574. DOI: 10.1002/1521-396X(200112)188:2<571::Aid-Pssa571>3.0.Co;2-F |
0.362 |
|
| 2001 |
Yun F, Huang D, Reshchikov M, King T, Baski A, Litton C, Jasinski J, Liliental-Weber Z, Visconti P, Morko� H. A Comparative Study of MBE-Grown GaN Films Having Predominantly Ga- or N-Polarity Physica Status Solidi (B). 228: 543-547. DOI: 10.1002/1521-3951(200111)228:2<543::Aid-Pssb543>3.0.Co;2-M |
0.39 |
|
| 2001 |
Visconti P, Huang D, Reshchikov M, Yun F, King T, Baski A, Cingolani R, Litton C, Jasinski J, Liliental-Weber Z, Morko� H. Investigation of Defects and Polarity in GaN Using Hot Wet Etching, Atomic Force and Transmission Electron Microscopy and Convergent Beam Electron Diffraction Physica Status Solidi (B). 228: 513-517. DOI: 10.1002/1521-3951(200111)228:2<513::Aid-Pssb513>3.0.Co;2-Y |
0.419 |
|
| 2000 |
Cui J, Sun A, Reshichkov M, Yun F, Baski A, Morkoç H. Preparation of Sapphire for High Quality III-Nitride Growth Mrs Internet Journal of Nitride Semiconductor Research. 5. DOI: 10.1557/S1092578300000077 |
0.421 |
|
| 2000 |
Jones KM, Visconti P, Yun F, Reshchikov MA, Baski AA, Morkoç H. Surface structure and polarization effects in GaN Thin Films as studied by Electric Force Microscopy Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G7.9 |
0.496 |
|
| 2000 |
Reshchikov MA, Cui J, Yun F, Baski A, Nathan MI, Morkoç H. GaN based quantum dot heterostructures Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T4.5.1 |
0.327 |
|
| 1999 |
Song HH, Jones KM, Baski AA. Growth of Ag rows on Si(5 5 12) Journal of Vacuum Science and Technology. 17: 1696-1699. DOI: 10.1116/1.581875 |
0.38 |
|
| 1999 |
Blankenship SR, Song HH, Baski AA, Carlisle JA. Reconstructions Of Ag On High-Index Silicon Surfaces Journal of Vacuum Science and Technology. 17: 1615-1620. DOI: 10.1116/1.581860 |
0.484 |
|
| 1999 |
Erwin SC, Baski AA, Whitman LJ, Rudd RE. Frenkel-Kontorova model of vacancy-line interactions on Ga/Si(112) Physical Review Letters. 83: 1818-1821. DOI: 10.1103/Physrevlett.83.1818 |
0.343 |
|
| 1999 |
Jones KM, Song HH, Baski AA. STM and STS Studies of One-Dimensional Row Growth: Ag on Si(5 5 12) Journal of Cluster Science. 10: 573-580. DOI: 10.1023/A:1021913326522 |
0.414 |
|
| 1999 |
Baski AA, Erwin SC, Whitman LJ. Structure of Si(112):Ga-(N×1) reconstructions Surface Science. 423: L265-L270. DOI: 10.1016/S0039-6028(99)00005-9 |
0.412 |
|
| 1997 |
Baski AA, Erwin SC, Whitman LJ. The structure of silicon surfaces from (001) to (111) Surface Science. 392: 69-85. DOI: 10.1016/S0039-6028(97)00499-8 |
0.448 |
|
| 1996 |
Erwin SC, Baski AA, Whitman LJ. Structure and Stability of Si(114)-(2 x 1). Physical Review Letters. 77: 687-690. PMID 10062877 DOI: 10.1103/Physrevlett.77.687 |
0.465 |
|
| 1996 |
Baski AA, Whitman LJ. Ga-induced restructuring of Si(112) and Si(337) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 992-994. DOI: 10.1116/1.589191 |
0.447 |
|
| 1995 |
Baski AA, Whitman LJ, Erwin SC. A stable high-index surface of silicon: si(5 5 12). Science (New York, N.Y.). 269: 1556-60. PMID 17789447 DOI: 10.1126/Science.269.5230.1556 |
0.468 |
|
| 1995 |
Baski AA, Whitman LJ. Quasiperiodic nanoscale faceting of high-index Si surfaces. Physical Review Letters. 74: 956-959. PMID 10058891 DOI: 10.1103/Physrevlett.74.956 |
0.345 |
|
| 1995 |
Baski AA, Whitman LJ. A scanning tunneling microscopy study of hydrogen adsorption on Si(112) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1469-1472. DOI: 10.1116/1.579688 |
0.349 |
|
| 1995 |
Bierbaum K, Grunze M, Baski AA, Chi LF, Schrepp W, Fuchs H. Growth of Self-Assembled n-Alkyltrichlorosilane Films on Si(100) Investigated by Atomic Force Microscopy Langmuir. 11: 2143-2150. DOI: 10.1021/La00006A049 |
0.302 |
|
| 1994 |
Baski AA, Fuchs H. Epitaxial growth of silver on mica as studied by AFM and STM Surface Science. 313: 275-288. DOI: 10.1016/0039-6028(94)90048-5 |
0.364 |
|
| 1993 |
Wigren C, Andersen JN, Nyholm R, Karlsson UO, Nogami J, Baski AA, Quate CF. Adsorption-site determination of ordered Yb on Si(111) surfaces. Physical Review. B, Condensed Matter. 47: 9663-9668. PMID 10005036 DOI: 10.1103/Physrevb.47.9663 |
0.387 |
|
| 1993 |
Shioda R, Kawazu A, Baski AA, Quate CF, Nogami J. Bi on Si(111): Two phases of the 3 × 3 surface reconstruction Physical Review B. 48: 4895-4898. DOI: 10.1103/PhysRevB.48.4895 |
0.327 |
|
| 1991 |
Nogami J, Baski AA, Quate CF. Aluminum on the Si(100) surface: Growth of the first monolayer. Physical Review. B, Condensed Matter. 44: 1415-1418. PMID 9999668 DOI: 10.1103/Physrevb.44.1415 |
0.404 |
|
| 1991 |
Baski AA, Quate CF, Nogami J. Tin-induced reconstructions of the Si(100) surface. Physical Review. B, Condensed Matter. 44: 11167-11177. PMID 9999237 DOI: 10.1103/Physrevb.44.11167 |
0.387 |
|
| 1991 |
Baski AA, Nogami J, Quate CF. Indium-induced reconstructions of the Si(100) surface. Physical Review. B, Condensed Matter. 43: 9316-9319. PMID 9996616 DOI: 10.1103/PhysRevB.43.9316 |
0.31 |
|
| 1991 |
Baski AA, Nogami J, Quate CF. Evolution of the Si(100)-2x 2-in reconstruction Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 1946-1950. DOI: 10.1116/1.577434 |
0.321 |
|
| 1991 |
Richter M, Woicik JC, Nogami J, Pianetta P, Miyano KE, Baski AA, Kendelewicz T, Bouldin CE, Spicer WE, Quate CF, Lindau I. Erratum: ``Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-Sb'' [Phys. Rev. Lett. 65, 3417 (1990)] Physical Review Letters. 66: 2836. DOI: 10.1103/Physrevlett.66.2836 |
0.39 |
|
| 1991 |
Nogami J, Baski AA, Quate CF. Structure of the Sb-terminated Si(100) surface Applied Physics Letters. 58: 475-477. DOI: 10.1063/1.104612 |
0.432 |
|
| 1990 |
Richter M, Woicik JC, Nogami J, Pianetta P, Miyano KE, Baski AA, Kendelewicz T, Bouldin CE, Spicer WE, Quate CF, Lindau I. Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2 x 1-Sb. Physical Review Letters. 65: 3417-3420. PMID 10042866 DOI: 10.1103/Physrevlett.65.3417 |
0.388 |
|
| 1990 |
Nogami J, Baski AA, Quate CF. sqrt 3 x sqrt 3 -->6 x 6 phase transition on the Au/Si(111) surface. Physical Review Letters. 65: 1611-1614. PMID 10042314 DOI: 10.1103/Physrevlett.65.1611 |
0.329 |
|
| 1990 |
Baski AA, Nogami J, Quate CF. Si(111)-5 x 1-Au reconstruction as studied by scanning tunneling microscopy. Physical Review. B, Condensed Matter. 41: 10247-10249. PMID 9993426 DOI: 10.1103/Physrevb.41.10247 |
0.329 |
|
| 1990 |
Baski AA, Nogami J, Quate CF. Gallium growth and reconstruction on the Si(100) surface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 245-248. DOI: 10.1116/1.577076 |
0.395 |
|
| 1990 |
Nogami J, Baski AA, Quate CF. Behavior of gallium on vicinal Si(100) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 3520-3523. DOI: 10.1116/1.576500 |
0.435 |
|
| 1990 |
Nogami J, Baski AA, Quate CF. Erratum: √3×√3 --> 6×6 phase transition on the Au/Si(111) surface [Phys. Rev. Lett. 65, 1611 (1990) Physical Review Letters. 65: 2211. DOI: 10.1103/Physrevlett.65.2211 |
0.382 |
|
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