Parents

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James D. Meindl grad student 1971 Stanford (Physics Tree)
 (MOS Electronics for a Reading Aid for the Blind)

Children

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Sergio Bampi grad student Stanford (Computer Science Tree)
John C. Bravman grad student 1984 Stanford (Physics Tree)
Jason C. S. Woo grad student 1987 Stanford
Gregory T. A. Kovacs grad student 1990 Stanford
Joseph W. Tringe grad student 2000 Stanford
Celisa K. Date grad student 2001 Stanford
Mahmood R. Kasnavi grad student 2001 Stanford
Deok-kee Kim grad student 2001 Stanford
Kyung-man Lee grad student 2001 Stanford
Farid Nemati grad student 2001 Stanford
Ant Ural grad student 2001 Stanford
Paul H. Hargrove grad student 2003 Stanford
Frankie Y. Liu grad student 2003 Stanford
Ali Mokhberi grad student 2003 Stanford
Julie L. Ngau grad student 2003 Stanford
Kailash Gopalakrishnan grad student 2004 Stanford
Sameer H. Jain grad student 2005 Stanford
Yaocheng Liu grad student 2005 Stanford
Eun-Ha Kim grad student 2006 Stanford
Yue Liang grad student 2006 Stanford
Ali Agah grad student 2007 Stanford
Raymond Woo grad student 2009 Stanford
BETA: Related publications

Publications

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Zulauf G, Tong Z, Plummer JD, et al. (2019) Active Power Device Selection in High- and Very-High-Frequency Power Converters Ieee Transactions On Power Electronics. 34: 6818-6833
Tong Z, Zulauf G, Xu J, et al. (2019) Output Capacitance Loss Characterization of Silicon Carbide Schottky Diodes Ieee Journal of Emerging and Selected Topics in Power Electronics. 7: 865-878
Bai X, Chen C, Mukherjee N, et al. (2016) Rapid Melt Growth of Single Crystal InGaAs on Si Substrates Advances in Materials Science and Engineering. 2016: 1-5
Bai X, Chen CY, Griffin PB, et al. (2014) Si incorporation from the seed into Ge stripes crystallized using rapid melt growth Applied Physics Letters. 104
Zhang Z, Chen CY, Crnogorac F, et al. (2013) Low-temperature monolithic three-layer 3-D process for FPGA Ieee Electron Device Letters. 34: 1044-1046
Koh HYS, Chen SL, Griffin PB, et al. (2010) High quality single-crystal laterally graded SiGe on insulator by rapid melt growth Electrochemical and Solid-State Letters. 13
Chen SL, Griffin PB, Plummer JD. (2010) Single-crystal gaas and gasb on insulator on bulk Si substrates based on rapid melt growth Ieee Electron Device Letters. 31: 597-599
Agah A, Vleugels K, Griffin PB, et al. (2010) A high-resolution low-power incrementalΣADC with extended range for biosensor arrays Ieee Journal of Solid-State Circuits. 45: 1099-1110
Chen SL, Griffin PB, Plummer JD. (2009) Negative differential resistance circuit design and memory applications Ieee Transactions On Electron Devices. 56: 634-640
Onal C, Woo R, Koh HYS, et al. (2009) A novel depletion-IMOS (DIMOS) device with improved reliability and reduced operating voltage Ieee Electron Device Letters. 30: 64-67
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