Bharat L. Bhuva

Affiliations: 
Electrical Engineering and Computer Science Vanderbilt University, Nashville, TN 
Area:
Electronics and Electrical Engineering
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"Bharat Bhuva"
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Publications

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Cao J, Xu L, Bhuva BL, et al. (2020) SE Response of Guard-Gate FF in 16- and 7-nm Bulk FinFET Technologies Ieee Transactions On Nuclear Science. 67: 1436-1442
Wender SA, O'Donnell JM, Zavorka L, et al. (2020) Measured Energy-Dependent Neutron Attenuation Through the Stacked Printed Circuit Boards Ieee Transactions On Nuclear Science. 67: 1114-1117
Harrington RC, Kauppila JS, Maharrey JA, et al. (2019) Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage Ieee Transactions On Nuclear Science. 66: 1427-1432
Harrington RC, Kauppila JS, Maharrey JA, et al. (2019) Exploiting SEU Data Analysis to Extract Fast SET Pulses Ieee Transactions On Nuclear Science. 66: 932-937
Harrington RC, Maharrey JA, Kauppila JS, et al. (2018) Effect of Transistor Variants on Single-Event Transients at the 14-/16-nm Bulk FinFET Technology Generation Ieee Transactions On Nuclear Science. 65: 1807-1813
Jiang H, Zhang H, Chatterjee I, et al. (2018) Power-Aware SE Analysis of Different FF Designs at the 14-/16-nm Bulk FinFET CMOS Technology Node Ieee Transactions On Nuclear Science. 65: 1866-1871
Cazzaniga C, Bhuva B, Bagatin M, et al. (2018) Atmospheric-Like Neutron Attenuation During Accelerated Neutron Testing With Multiple Printed Circuit Boards Ieee Transactions On Nuclear Science. 65: 1830-1834
Chen RM, Mahatme NN, Diggins ZJ, et al. (2018) Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications Ieee Transactions On Nuclear Science. 65: 1823-1829
Ball DR, Alles ML, Kauppila JS, et al. (2018) The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops Ieee Transactions On Nuclear Science. 65: 326-330
Kauppila JS, Maharrey JA, Harrington RC, et al. (2018) Exploiting Parallelism and Heterogeneity in a Radiation Effects Test Vehicle for Efficient Single-Event Characterization of Nanoscale Circuits Ieee Transactions On Nuclear Science. 65: 486-494
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