Year |
Citation |
Score |
2019 |
Gong C, Kim EM, Wang Y, Lee G, Zhang X. Multiferroicity in atomic van der Waals heterostructures. Nature Communications. 10: 2657. PMID 31201316 DOI: 10.1038/S41467-019-10693-0 |
0.332 |
|
2018 |
Gong SJ, Gong C, Sun YY, Tong WY, Duan CG, Chu JH, Zhang X. Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors. Proceedings of the National Academy of Sciences of the United States of America. PMID 30076226 DOI: 10.1073/Pnas.1715465115 |
0.371 |
|
2017 |
Dong H, Gong C, Addou R, McDonnell S, Azcatl A, Qin X, Wang W, Wang WH, Hinkle CL, Wallace RM. Schottky barrier height of Pd/MoS2 contact by large area photoemission spectroscopy. Acs Applied Materials & Interfaces. PMID 29035026 DOI: 10.1021/Acsami.7B10974 |
0.403 |
|
2017 |
Wang WH, Gong C, Wang W, Kong F, Kim H, Fullerton-Shirey SK, Seabaugh A, Cho K. Energetics of metal ion adsorption on and diffusion through crown ethers: First principles study on two-dimensional electrolyte Solid State Ionics. 301: 176-181. DOI: 10.1016/J.Ssi.2017.01.029 |
0.448 |
|
2015 |
Wang W, Gong C, Xiong K, Santosh KC, Wallace RM, Cho K. Materials Design on the Origin of Gap States in a High-κ/GaAs Interface Engineering. 1: 372-377. DOI: 10.15302/J-Eng-2015052 |
0.485 |
|
2015 |
Gong C, Zhang H, Wang W, Colombo L, Wallace RM, Cho K. Erratum: “Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors” [Appl. Phys. Lett. 103, 053513 (2013)] Applied Physics Letters. 107: 139904. DOI: 10.1063/1.4932088 |
0.61 |
|
2015 |
Wang WH, Gong C, Wang W, Fullerton-Shirey SK, Seabaugh A, Cho K. First-Principles Study of Crown Ether and Crown Ether-Li Complex Interactions with Graphene Journal of Physical Chemistry C. 119: 20016-20022. DOI: 10.1021/Acs.Jpcc.5B07049 |
0.542 |
|
2014 |
McDonnell S, Azcatl A, Addou R, Gong C, Battaglia C, Chuang S, Cho K, Javey A, Wallace RM. Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments. Acs Nano. 8: 6265-72. PMID 24797712 DOI: 10.1021/Nn501728W |
0.542 |
|
2014 |
Gong C, Colombo L, Wallace RM, Cho K. The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces. Nano Letters. 14: 1714-20. PMID 24660782 DOI: 10.1021/Nl403465V |
0.549 |
|
2014 |
Gong C, McDonnell S, Qin X, Azcatl A, Dong H, Chabal YJ, Cho K, Wallace RM. Realistic metal-graphene contact structures. Acs Nano. 8: 642-9. PMID 24261695 DOI: 10.1021/Nn405249N |
0.584 |
|
2014 |
Gong C, Kim S, Zhou S, Hu Y, Acik M, De Heer W, Berger C, Bongiorno A, Riedo E, Chabal Y. Chemical bonding and stability of multilayer graphene oxide layers Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2045554 |
0.402 |
|
2014 |
Ma B, Gong C, Wen Y, Chen R, Cho K, Shan B. Modulation of contact resistance between metal and graphene by controlling the graphene edge, contact area, and point defects: An ab initio study Journal of Applied Physics. 115: 183708. DOI: 10.1063/1.4876738 |
0.586 |
|
2014 |
Gong C, McDonnell S, Qin X, Azcatl A, Dong H, Chabal YJ, Cho K, Wallace RM. Realistic metal-graphene contact structures Acs Nano. 8: 642-649. DOI: 10.1021/nn405249n |
0.347 |
|
2014 |
Zhang H, Lee G, Gong C, Colombo L, Cho K. Grain Boundary Effect on Electrical Transport Properties of Graphene The Journal of Physical Chemistry C. 118: 2338-2343. DOI: 10.1021/Jp411464W |
0.575 |
|
2014 |
Zhou S, Kim S, Di Gennaro E, Hu Y, Gong C, Lu X, Berger C, de Heer W, Riedo E, Chabal YJ, Aruta C, Bongiorno A. Microspotting: Film Structure of Epitaxial Graphene Oxide on SiC: Insight on the Relationship Between Interlayer Spacing, Water Content, and Intralayer Structure (Adv. Mater. Interfaces 3/2014) Advanced Materials Interfaces. 1: n/a-n/a. DOI: 10.1002/Admi.201470019 |
0.344 |
|
2014 |
Zhou S, Kim S, Di Gennaro E, Hu Y, Gong C, Lu X, Berger C, De Heer W, Riedo E, Chabal YJ, Aruta C, Bongiorno A. Film Structure of Epitaxial Graphene Oxide on SiC: Insight on the Relationship between Interlayer Spacing, Water Content, and Intralayer Structure Advanced Materials Interfaces. 1. DOI: 10.1002/Admi.201300106 |
0.364 |
|
2013 |
Gong C, Huang C, Miller J, Cheng L, Hao Y, Cobden D, Kim J, Ruoff RS, Wallace RM, Cho K, Xu X, Chabal YJ. Metal contacts on physical vapor deposited monolayer MoS2. Acs Nano. 7: 11350-7. PMID 24219632 DOI: 10.1021/Nn4052138 |
0.581 |
|
2013 |
Mao R, Kong BD, Gong C, Xu S, Jayasekera T, Cho K, Kim KW. First-principles calculation of thermal transport in metal/graphene systems Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.165410 |
0.534 |
|
2013 |
Gong C, Zhang H, Wang W, Colombo L, Wallace RM, Cho K. Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors Applied Physics Letters. 103. DOI: 10.1063/1.4817409 |
0.621 |
|
2013 |
Gong C, Floresca HC, Hinojos D, McDonnell S, Qin X, Hao Y, Jandhyala S, Mordi G, Kim J, Colombo L, Ruoff RS, Kim MJ, Cho K, Wallace RM, Chabal YJ. Rapid selective etching of PMMA residues from transferred graphene by carbon dioxide Journal of Physical Chemistry C. 117: 23000-23008. DOI: 10.1021/Jp408429V |
0.488 |
|
2012 |
Gong C, Hinojos D, Wang W, Nijem N, Shan B, Wallace RM, Cho K, Chabal YJ. Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control. Acs Nano. 6: 5381-7. PMID 22540140 DOI: 10.1021/Nn301241P |
0.597 |
|
2012 |
Gong C, Colombo L, Cho K. Photon-Assisted CVD Growth of Graphene Using Metal Adatoms As Catalysts Journal of Physical Chemistry C. 116: 18263-18269. DOI: 10.1021/Jp305268N |
0.552 |
|
2012 |
Gong C, Acik M, Abolfath RM, Chabal Y, Cho K. Graphitization of graphene oxide with ethanol during thermal reduction Journal of Physical Chemistry C. 116: 9969-9979. DOI: 10.1021/Jp212584T |
0.48 |
|
2011 |
Yamaguchi H, Murakami K, Eda G, Fujita T, Guan P, Wang W, Gong C, Boisse J, Miller S, Acik M, Cho K, Chabal YJ, Chen M, Wakaya F, Takai M, et al. Field emission from atomically thin edges of reduced graphene oxide. Acs Nano. 5: 4945-52. PMID 21618992 DOI: 10.1021/Nn201043A |
0.485 |
|
2011 |
Gong SJ, Li ZY, Yang ZQ, Gong C, Duan C, Chu JH. Spintronic properties of graphene films grown on Ni(111) substrate Journal of Applied Physics. 110: 43704. DOI: 10.1063/1.3622618 |
0.425 |
|
2011 |
Wang W, Gong C, Shan B, Wallace RM, Cho K. Sulfur passivation effect on HfO2 /GaAs interface: A first-principles study Applied Physics Letters. 98. DOI: 10.1063/1.3597219 |
0.493 |
|
2011 |
Wang W, Xiong K, Gong C, Wallace RM, Cho K. Si passivation effects on atomic bonding and electronic properties at HfO2/GaAs interface: A first-principles study Journal of Applied Physics. 109: 63704. DOI: 10.1063/1.3554689 |
0.471 |
|
2010 |
Acik M, Mattevi C, Gong C, Lee G, Cho K, Chhowalla M, Chabal YJ. The role of intercalated water in multilayered graphene oxide. Acs Nano. 4: 5861-8. PMID 20886867 DOI: 10.1021/Nn101844T |
0.501 |
|
2010 |
Cho K, Gong C, Lee G, Wang W, Shan B, Vogel EM, Wallace RM. First-principles and quantum transport studies of metal-graphene end contacts Mrs Proceedings. 1259. DOI: 10.1557/Proc-1259-S14-35 |
0.576 |
|
2010 |
Gong C, Lee G, Shan B, Vogel EM, Wallace RM, Cho K. First-principles study of metal–graphene interfaces Journal of Applied Physics. 108: 123711. DOI: 10.1063/1.3524232 |
0.597 |
|
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