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Mark E. Overberg, Ph.D. - Publications

Affiliations: 
2001 University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Materials Science Engineering, Condensed Matter Physics
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68 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Voss LF, Ip K, Pearton SJ, Shul RJ, Overberg ME, Baca AG, Sanchez C, Stevens J, Martinez M, Armendariz MG, Wouters GA. SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 487-494. DOI: 10.1116/1.2837849  0.304
2005 Frazier RM, Thaler GT, Gila BP, Stapleton J, Overberg ME, Abernathy CR, Pearton SJ, Ren F, Zavada JM. AIN-based dilute magnetic semiconductors Journal of Electronic Materials. 34: 365-369. DOI: 10.1007/S11664-005-0112-7  0.813
2004 Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Ferromagnetic AlGaCrP Films by Ion Implantation Electrochemical and Solid-State Letters. 7. DOI: 10.1149/1.1640491  0.824
2004 Heo YW, Abernathy C, Pruessner K, Sigmund W, Norton DP, Overberg M, Ren F, Chisholm MF. Structure and optical properties of cored wurtzite (Zn,Mg)O heteroepitaxial nanowires Journal of Applied Physics. 96: 3424-3428. DOI: 10.1063/1.1774257  0.518
2004 Kim J, Ren F, Pearton SJ, Abernathy CR, Overberg ME, Thaler GT, Park YD. Dilute Magnetic GaN, SiC and Related Semiconductors Cheminform. 35. DOI: 10.1002/chin.200422246  0.502
2003 Overberg ME, Baik KH, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Hydrogenation Effects on Magnetic Properties of GaMnP Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1612725  0.764
2003 Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Magnetic properties of Mn-implanted AlGaP alloys Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 2093-2097. DOI: 10.1116/1.1609473  0.829
2003 Norton DP, Overberg ME, Pearton SJ, Pruessner K, Budai JD, Boatner LA, Chisholm MF, Lee JS, Khim ZG, Park YD, Wilson RG. Ferromagnetism in cobalt-implanted ZnO Applied Physics Letters. 83: 5488-5490. DOI: 10.1063/1.1637719  0.514
2003 Frazier R, Thaler G, Overberg M, Gila B, Abernathy CR, Pearton SJ. Indication of hysteresis in AlMnN Applied Physics Letters. 83: 1758-1760. DOI: 10.1063/1.1604465  0.81
2003 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Vdovin VI, Ip K, Overberg ME, Heo YW, Norton DP, Pearton SJ, Zavada JM, Dravin VA. Proton implantation effects on electrical and recombination properties of undoped ZnO Journal of Applied Physics. 94: 2895-2900. DOI: 10.1063/1.1597944  0.407
2003 Seo SSA, Kim MW, Lee YS, Noh TW, Park YD, Thaler GT, Overberg ME, Abernathy CR, Pearton SJ. Observation of sphere resonance peak in ferromagnetic GaN:Mn Applied Physics Letters. 82: 4749-4751. DOI: 10.1063/1.1588741  0.76
2003 Polyakov AY, Smirnov NB, Govorkov AV, Ip K, Overberg ME, Heo YW, Norton DP, Pearton SJ, Luo B, Ren F, Zavada JM. Hydrogen plasma treatment effects on electrical and optical properties ofn-ZnO Journal of Applied Physics. 94: 400-406. DOI: 10.1063/1.1579114  0.313
2003 Polyakov AY, Smirnov NB, Govorkov AV, Pashkova NV, Shlensky AA, Pearton SJ, Overberg ME, Abernathy CR, Zavada JM, Wilson RG. Electrical and optical properties of Cr and Fe implantedn-GaN Journal of Applied Physics. 93: 5388-5396. DOI: 10.1063/1.1565677  0.589
2003 Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Ferromagnetic semiconductors based upon AlGaP Journal of Applied Physics. 93: 7861-7863. DOI: 10.1063/1.1556247  0.814
2003 Pearton SJ, Abernathy CR, Overberg ME, Thaler GT, Norton DP, Theodoropoulou N, Hebard AF, Park YD, Ren F, Kim J, Boatner LA. Wide band gap ferromagnetic semiconductors and oxides Journal of Applied Physics. 93: 1-13. DOI: 10.1063/1.1517164  0.765
2003 Ip K, Overberg M, Baik K, Wilson R, Kucheyev S, Williams J, Jagadish C, Ren F, Heo Y, Norton D, Zavada J, Pearton S. ICP dry etching of ZnO and effects of hydrogen Solid-State Electronics. 47: 2289-2294. DOI: 10.1016/S0038-1101(03)00211-9  0.309
2003 Ip K, Overberg M, Heo Y, Norton D, Pearton S, Stutz C, Kucheyev S, Jagadish C, Williams J, Luo B, Ren F, Look D, Zavada J. Hydrogen incorporation, diffusivity and evolution in bulk ZnO Solid-State Electronics. 47: 2255-2259. DOI: 10.1016/S0038-1101(03)00207-7  0.32
2003 Theodoropoulou NA, Hebard AF, Norton DP, Budai JD, Boatner LA, Lee JS, Khim ZG, Park YD, Overberg ME, Pearton SJ, Wilson RG. Ferromagnetism in Co- and Mn-doped ZnO Solid-State Electronics. 47: 2231-2235. DOI: 10.1016/S0038-1101(03)00203-X  0.543
2003 Ivill M, Overberg ME, Abernathy CR, Norton DP, Hebard AF, Theodoropoulou N, Budai JD. Properties of Mn-doped Cu2O semiconducting thin films grown by pulsed-laser deposition Solid-State Electronics. 47: 2215-2220. DOI: 10.1016/S0038-1101(03)00200-4  0.571
2003 Overberg ME, Thaler GT, Frazier RM, Rairigh R, Kelly J, Abernathy CR, Pearton SJ, Hebard AF, Wilson RG, Zavada JM. Ferromagnetism in Mn- and Cr-implanted AlGaP Solid-State Electronics. 47: 1549-1552. DOI: 10.1016/S0038-1101(03)00098-4  0.823
2003 Polyakov A, Govorkov A, Smirnov N, Pashkova N, Pearton S, Overberg M, Abernathy C, Norton D, Zavada J, Wilson R. Properties of Mn and Co implanted ZnO crystals Solid-State Electronics. 47: 1523-1531. DOI: 10.1016/S0038-1101(03)00083-2  0.558
2003 Kelly F, Chodelka R, Singh RK, Pearton S, Overberg M, Fitz-Gerald J. GaN films annealed under high pressure Solid-State Electronics. 47: 1081-1087. DOI: 10.1016/S0038-1101(02)00496-3  0.373
2003 Polyakov A, Smirnov N, Govorkov A, Kim J, Ren F, Thaler G, Overberg M, Frazier R, Abernathy C, Pearton S, Lee C, Chyi J, Wilson R, Zavada J. Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer Solid-State Electronics. 47: 981-987. DOI: 10.1016/S0038-1101(02)00472-0  0.774
2003 Polyakov A, Smirnov N, Govorkov A, Kim J, Ren F, Overberg M, Thaler G, Abernathy C, Pearton S, Lee C, Chyi J, Wilson R, Zavada J. Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn Solid-State Electronics. 47: 963-968. DOI: 10.1016/S0038-1101(02)00463-X  0.74
2003 Pearton SJ, Park YD, Abernathy CR, Overberg ME, Thaler GT, Kim JH, Ren F, Zavada JM, Wilson RG. Ferromagnetism in GaN and SiC doped with transition metals Thin Solid Films. 447: 493-501. DOI: 10.1016/J.Tsf.2003.07.012  0.733
2003 Overberg ME, Thaler GT, Abernathy CR, Theodoropoulou NA, McCarthy KT, Arnason SB, Lee JS, Lim JD, Shim SB, Suh KS, Khim ZG, Park YD, Pearton SJ, Hebard AF. Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy Journal of Electronic Materials. 32: 298-306. DOI: 10.1007/S11664-003-0148-5  0.755
2003 Overberg ME, Thaler GT, Abernathy CR, Theodoropoulou NA, McCarthy KT, Arnason SB, Lee JS, Lim JD, Shim SB, Suh KS, Khim ZG, Park YD, Pearton SJ, Hebard AF. Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy Journal of Electronic Materials. 32: 298-306. DOI: 10.1007/s11664-003-0148-5  0.469
2003 Pearton SJ, Park YD, Abernathy CR, Overberg ME, Thaler GT, Kim J, Ren F. GaN and other materials for semiconductor spintronics Journal of Electronic Materials. 32: 288-297. DOI: 10.1007/S11664-003-0147-6  0.746
2003 Pearton SJ, Overberg ME, Thaler GT, Abernathy CR, Kim J, Ren F, Theodoropoulou N, Hebard AF, Park YD. Room temperature ferromagnetism in GaMnN and GaMnP Physica Status Solidi (a) Applied Research. 195: 222-227. DOI: 10.1002/Pssa.200306283  0.764
2002 Theodoropoulou N, Hebard AF, Overberg ME, Abernathy CR, Pearton SJ, Chu SN, Wilson RG. Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C. Physical Review Letters. 89: 107203. PMID 12225220 DOI: 10.1103/Physrevlett.89.107203  0.614
2002 Overberg ME, Thaler GT, Frazier RM, Gila BP, Abernathy CR, Pearton SJ, Theodoropoulou NA, Arnason SB, Hebard AF, Park YD. Ferromagnetic and paramagnetic semiconductors based upon GaN, AlGaN, and GaP Materials Research Society Symposium - Proceedings. 690: 9-14. DOI: 10.1557/Proc-690-F1.5  0.818
2002 Kim J, Ren F, Polyakov AY, Smirnov NB, Govorkov AV, Pashova NY, Thaler GT, Overberg ME, Abernathy CR, Pearton SJ. Optical Absorption and Temperature-Dependent Resistivity of GaMnN Grown by Molecular Beam Epitaxy Electrochemical and Solid-State Letters. 5: G103. DOI: 10.1149/1.1511343  0.741
2002 Overberg ME, Gila BP, Thaler GT, Abernathy CR, Pearton SJ, Theodoropoulou NA, McCarthy KT, Arnason SB, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Park YD. Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 969-973. DOI: 10.1116/1.1477424  0.816
2002 Pearton SJ, Overberg ME, Thaler G, Abernathy CR, Theodoropoulou N, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Polyakov AY, Osinsky AV, Norris PE, Chow PP, Wowchack AM, Van Hove JM, et al. Characterization of high dose Mn, Fe, and Ni implantation into p-GaN Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 721-724. DOI: 10.1116/1.1465449  0.769
2002 Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM, Park YD. Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 579-582. DOI: 10.1116/1.1465447  0.605
2002 Ip K, Overberg ME, Heo YW, Norton DP, Pearton SJ, Kucheyev SO, Jagadish C, Williams JS, Wilson RG, Zavada JM. Thermal stability of ion-implanted hydrogen in ZnO Applied Physics Letters. 81: 3996-3998. DOI: 10.1063/1.1524033  0.385
2002 Polyakov AY, Govorkov AV, Smirnov NB, Pashkova NY, Thaler GT, Overberg ME, Frazier R, Abernathy CR, Pearton SJ, Kim J, Ren F. Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy Journal of Applied Physics. 92: 4989-4993. DOI: 10.1063/1.1510597  0.782
2002 Polyakov AY, Smirnov NB, Govorkov AV, Pashkova NY, Kim J, Ren F, Overberg ME, Thaler GT, Abernathy CR, Pearton SJ, Wilson RG. Electrical and optical properties of GaN films implanted with Mn and Co Journal of Applied Physics. 92: 3130-3136. DOI: 10.1063/1.1499977  0.747
2002 Kim J, Ren F, Thaler GT, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG. Pt Schottky contacts to n-(Ga,Mn)N Applied Physics Letters. 81: 658-660. DOI: 10.1063/1.1496130  0.717
2002 Pearton SJ, Overberg ME, Abernathy CR, Theodoropoulou NA, Hebard AF, Chu SNG, Osinsky A, Fuflyigin V, Zhu LD, Polyakov AY, Wilson RG. Magnetic and structural characterization of Mn-implanted, single-crystal ZnGeSiN 2 Journal of Applied Physics. 92: 2047-2051. DOI: 10.1063/1.1490621  0.625
2002 Thaler GT, Overberg ME, Gila B, Frazier R, Abernathy CR, Pearton SJ, Lee JS, Lee SY, Park YD, Khim ZG, Kim J, Ren F. Magnetic properties of n-GaMnN thin films Applied Physics Letters. 80: 3964-3966. DOI: 10.1063/1.1481533  0.814
2002 Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM. Use of ion implantation to facilitate the discovery and characterization of ferromagnetic semiconductors Journal of Applied Physics. 91: 7499-7501. DOI: 10.1063/1.1452750  0.669
2002 Pearton S, Abernathy C, Overberg M, Thaler G, Onstine A, Gila B, Ren F, Lou B, Kim J. New applications advisable for gallium nitride Materials Today. 5: 24-31. DOI: 10.1016/S1369-7021(02)00636-3  0.733
2002 Pearton SJ, Theodoropoulou N, Overberg ME, Abernathy CR, Hebard AF, Chu SNG, Wilson RG, Zavada JM. Characterization of Ni-implanted GaN and SiC Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 94: 159-163. DOI: 10.1016/S0921-5107(02)00056-9  0.579
2002 Overberg ME, Theodoropoulou N, Chu SNG, Pearton SJ, Abernathy CR, Hebard AF, Wilson RG, Zavada JM. Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 94: 14-19. DOI: 10.1016/S0921-5107(02)00055-7  0.618
2002 Lee KP, Pearton SJ, Overberg ME, Abernathy CR, Wilson RG, Chu SNG, Theodoropolou N, Hebard AF, Zavada JM. Magnetic effects of direct ion implantation of Mn and Fe into p-GaN Journal of Electronic Materials. 31: 411-415. DOI: 10.1007/S11664-002-0093-8  0.679
2002 Pearton SJ, Lee KP, Overberg ME, Abernathy CR, Theodoropoulou N, Hebard AF, Wilson RG, Chu SNG, Zavada J. Magnetism in SiC implanted with high doses of Fe and Mn Journal of Electronic Materials. 31: 336-339. DOI: 10.1007/S11664-002-0078-7  0.617
2001 Theodoropoulou N, Lee KP, Overberg ME, Chu SN, Hebard AF, Abernathy CR, Pearton SJ, Wilson RG. Nanoscale magnetic regions formed in GaN implanted with Mn. Journal of Nanoscience and Nanotechnology. 1: 101-6. PMID 12914038 DOI: 10.1166/Jnn.2001.004  0.665
2001 Theodoropoulou N, Hebard AF, Overberg ME, Abernathy CR, Pearton SJ, Chu SNG, Wilson RG. Ferromagnetic and structural properties of Mn-implanted p-GaN Materials Research Society Symposium - Proceedings. 674. DOI: 10.1557/Proc-674-T6.8  0.594
2001 Overberg ME, Abernathy CR, Pearton SJ, Sharifi F, Hebard AF, Theodoropoulou N, Von Molnar S, Anane M, Xiong P. Epitaxial growth of dilute magnetic semiconductors: GaMnN and GaMnP Materials Research Society Symposium - Proceedings. 674. DOI: 10.1557/Proc-674-T6.5  0.628
2001 Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM. Magnetic properties of Fe- and Mn-implanted SiC Electrochemical and Solid-State Letters. 4. DOI: 10.1149/1.1414945  0.617
2001 Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM. Characterization of high dose Fe implantation into p-GaN Applied Physics Letters. 79: 3452-3454. DOI: 10.1063/1.1420406  0.6
2001 Overberg ME, Gila BP, Abernathy CR, Pearton SJ, Theodoropoulou NA, McCarthy KT, Arnason SB, Hebard AF. Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy Applied Physics Letters. 79: 3128-3130. DOI: 10.1063/1.1416472  0.72
2001 Kent DG, Overberg ME, Pearton SJ. Co-implantation of Be+O and Mg+O into GaN Journal of Applied Physics. 90: 3750-3753. DOI: 10.1063/1.1402668  0.358
2001 Overberg ME, Abernathy CR, Pearton SJ, Theodoropoulou NA, McCarthy KT, Hebard AF. Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN Applied Physics Letters. 79: 1312-1314. DOI: 10.1063/1.1397763  0.616
2001 Theodoropoulou N, Hebard AF, Overberg ME, Abernathy CR, Pearton SJ, Chu SNG, Wilson RG. Magnetic and structural properties of Mn-implanted GaN Applied Physics Letters. 78: 3475-3477. DOI: 10.1063/1.1376659  0.578
2001 Overberg M, Lee K, Abernathy CR, Pearton SJ, Hobson W, Wilson RG, Zavada JM. Characterization and annealing of Eu-doped GaN Materials Science and Engineering: B. 81: 150-152. DOI: 10.1016/S0921-5107(00)00705-4  0.541
2001 Overberg M, Abernathy CR, MacKenzie J, Pearton SJ, Wilson RG, Zavada JM. Effect of carbon doping on GaN:Er Materials Science and Engineering: B. 81: 121-126. DOI: 10.1016/S0921-5107(00)00686-3  0.517
2001 Kent D, Lee K, Zhang A, Luo B, Overberg M, Abernathy C, Ren F, Mackenzie K, Pearton S, Nakagawa Y. Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes Solid-State Electronics. 45: 1837-1842. DOI: 10.1016/S0038-1101(01)00248-9  0.537
2001 Johnson J, LaRoch J, Ren F, Gila B, Overberg M, Abernathy C, Chyi J, Chuo C, Nee T, Lee C, Lee K, Park S, Park Y, Pearton S. Schottky rectifiers fabricated on free-standing GaN substrates Solid-State Electronics. 45: 405-410. DOI: 10.1016/S0038-1101(01)00059-4  0.608
2001 Kent D, Lee K, Zhang A, Luo B, Overberg M, Abernathy C, Ren F, Mackenzie K, Pearton S, Nakagawa Y. Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN Solid-State Electronics. 45: 467-470. DOI: 10.1016/S0038-1101(01)00016-8  0.532
2001 Theodoropoulou N, Overberg ME, Chu SNG, Hebard AF, Abernathy CR, Wilson RG, Zavada JM, Lee KP, Pearton SJ. Magnetic properties of Mn and Fe-implanted p-GaN Physica Status Solidi (B) Basic Research. 228: 337-340. DOI: 10.1002/1521-3951(200111)228:1<337::Aid-Pssb337>3.0.Co;2-J  0.676
2000 Overberg M, Abernathy C, Pearton SJ, Wilson RG, Zavada JM. Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er Mrs Internet Journal of Nitride Semiconductor Research. 5: 810-816. DOI: 10.1557/s1092578300005111  0.456
2000 Kent D, Lee K, Zhang A, Luo B, Overberg M, Abernathy C, Ren F, Mackenzie K, Pearton S, Nakagawa Y. Effect of N2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G3.16  0.457
2000 Overberg ME, Brand J, MacKenzie JD, Abernathy CR, Pearton SJ, Zavada JM. The Effect of Er Concentration on the Morphology and Photoluminescence of GaN:Er Journal of the Electrochemical Society. 147: 3117. DOI: 10.1149/1.1393867  0.505
2000 Lee KN, Donovan SM, Gila B, Overberg M, Mackenzie JD, Abernathy CR, Wilson RG. Surface chemical treatment for the cleaning of AlN and GaN surfaces Journal of the Electrochemical Society. 147: 3087-3090. DOI: 10.1149/1.1393860  0.601
2000 Park YD, Jung KB, Overberg M, Temple D, Pearton SJ, Holloway PH. Comparative study of Ni nanowires patterned by electron-beam lithography and fabricated by lift-off and dry etching techniques Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 16. DOI: 10.1116/1.591143  0.328
1999 Overberg M, Abernathy C, Pearton SJ, Wilson RG, Zavada JM. Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er Mrs Proceedings. 595. DOI: 10.1557/S1092578300005111  0.522
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