Thomas M. Katona, Ph.D.

Affiliations: 
2003 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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"Thomas Katona"

Parents

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Steven P Denbaars grad student 2003 UC Santa Barbara
 (Development of ultraviolet nitride-based light emitting diodes.)
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Publications

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Uedono A, Ishibashi S, Keller S, et al. (2009) Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation Journal of Applied Physics. 105
Reed ML, Garrett GA, Sampath AV, et al. (2008) Progress in high efficiency UV LED research for reagentless bioagent detection and water purification International Journal of High Speed Electronics and Systems. 18: 179-185
Khan A, Balakrishnan K, Katona T. (2008) Ultraviolet light-emitting diodes based on group three nitrides Nature Photonics. 2: 77-84
Adivarahan V, Fareed Q, Islam M, et al. (2007) Robust 290 nm emission light emitting diodes over pulsed laterally overgrown AlN Japanese Journal of Applied Physics, Part 2: Letters. 46: L877-L879
Fareed Q, Adivarahan V, Gaevski M, et al. (2007) Metal-organic hydride vapor phase epitaxy of AlxGa 1-xN films over sapphire Japanese Journal of Applied Physics, Part 2: Letters. 46: L752-L754
Adivarahan V, Fareed Q, Srivastava S, et al. (2007) Robust 285 nm deep UV light emitting diodes over metal organic hydride vapor phase epitaxially grown AlN/sapphire templates Japanese Journal of Applied Physics, Part 2: Letters. 46: L537-L539
Deng J, Bilenko Y, Lunev A, et al. (2007) 247 nm ultra-violet light emitting diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L263-L264
Barabash RI, Ice GE, Liu W, et al. (2006) Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction Physica Status Solidi (B) Basic Research. 243: 1508-1513
Hu X, Deng J, Zhang JP, et al. (2006) Deep ultraviolet light-emitting diodes Physica Status Solidi (a) Applications and Materials Science. 203: 1815-1818
Barabash RI, Barabash OM, Ice GE, et al. (2006) Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers Physica Status Solidi (a) Applications and Materials Science. 203: 142-148
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