Uygar E. Avci, Ph.D.
Affiliations: | 2005 | Cornell University, Ithaca, NY, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Uygar Avci"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Sandip Tiwari | grad student | 2005 | Cornell | |
| (Back -gated MOSFET for power -adaptive applications.) | ||||
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Publications
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| Kim R, Avci UE, Young IA. (2020) Computational Study of Temperature Effects on MOSFET Channel Material Benchmarking Ieee Electron Device Letters. 41: 1332-1335 |
| Kim R, Avci UE, Young IA. (2020) Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects Ieee Journal of the Electron Devices Society. 8: 505-523 |
| Kim R, Avci UE, Young IA. (2019) Computational Study of Geometrical Designs for Source/Drain Contacts to Reduce Parasitic Resistance in Extremely Scaled MOSFETs Ieee Transactions On Electron Devices. 66: 1189-1196 |
| Vaidyanathan K, Morris DH, Avci UE, et al. (2018) Improving Energy Efficiency of Low-Voltage Logic by Technology-Driven Design Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 4: 10-18 |
| Chang S, Avci UE, Nikonov DE, et al. (2018) Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor Physical Review Applied. 9: 14010 |
| Chang S, Avci UE, Nikonov DE, et al. (2017) A Thermodynamic Perspective of Negative-Capacitance Field-Effect Transistors Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 3: 56-64 |
| Kim R, Avci UE, Young IA. (2015) Comprehensive Performance Benchmarking of III-V and Si nMOSFETs (Gate Length} = 13 nm) Considering Supply Voltage and OFF-Current Ieee Transactions On Electron Devices |
| Kim R, Avci UE, Young IA. (2015) Ge Nanowire nMOSFET Design with Optimum Band Structure for High Ballistic Drive Current Ieee Electron Device Letters. 36: 751-753 |
| Avci UE, Morris DH, Young IA. (2015) Tunnel field-effect transistors: Prospects and challenges Ieee Journal of the Electron Devices Society. 3: 88-95 |
| Kim R, Avci UE, Young IA. (2015) Source/drain doping effects and performance analysis of ballistic III-V n-MOSFETs Ieee Journal of the Electron Devices Society. 3: 37-43 |