Yitao Liao, Ph.D.
Affiliations: | 2011 | Boston University, Boston, MA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Yitao Liao"Parents
Sign in to add mentor| Theodore D. Moustakas | grad student | 2011 | Boston University | |
| (Development of efficient deep ultraviolet light emitting diodes.) | ||||
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Publications
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| Jin L, Zhang D, Zhang H, et al. (2016) Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates. Scientific Reports. 6: 34030 |
| Tzou AJ, Lin DW, Yu CR, et al. (2016) High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer. Optics Express. 24: 11387-11395 |
| Moustakas TD, Liao Y, Kao CK, et al. (2012) Deep UV-LEDs with high IQE based on AlGaN alloys with strong band structure potential fluctuations Proceedings of Spie - the International Society For Optical Engineering. 8278 |
| Liao Y, Thomidis C, Kao CK, et al. (2012) Publishers note: AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy (Applied Physics Letters (2011) 98 (081110)) Applied Physics Letters. 100 |
| Liao Y, Kao CK, Thomidis C, et al. (2012) Recent progress of efficient deep UV-LEDs by plasma-assisted molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 798-801 |
| Sudradjat FF, Zhang W, Driscoll K, et al. (2012) Sequential tunneling transport in GaN/AlGaN quantum cascade structures Physica Status Solidi (C). 9: 588-591 |
| Liao Y, Thomidis C, Kao CK, et al. (2011) AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy Applied Physics Letters. 98 |
| Paiella R, Driscoll K, Li Y, et al. (2010) Intersubband transitions in GaN-based quantum wells: a new materials platform for infrared device applications Proceedings of Spie. 7808: 780807 |
| Sudradjat F, Zhang W, Driscoll K, et al. (2010) Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures Journal of Applied Physics. 108: 103704 |
| Liao Y, Thomidis C, Kao C, et al. (2010) Milliwatt power AlGaN‐based deep ultraviolet light emitting diodes by plasma‐assisted molecular beam epitaxy Physica Status Solidi-Rapid Research Letters. 4: 49-51 |