| Year |
Citation |
Score |
| 2004 |
Kim I, Han SK, Osburn CM. Effect of Post Metallization Annealing for Alternative Gate Stack Devices Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1636181 |
0.435 |
|
| 2004 |
Kim I, Han SK, Osburn CM. Stability of Advanced Gate Stack Devices Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1636180 |
0.336 |
|
| 2002 |
Osburn CM, Kim I, Han SK, De I, Yee KF, Gannavaram S, Lee SJ, Lee C, Luo ZJ, Zhu W, Hauser JR, Kwong D, Lucovsky G, Ma TP, Ozturk MC. Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? Ibm Journal of Research and Development. 46: 299-315. DOI: 10.1147/Rd.462.0299 |
0.47 |
|
| 2000 |
Osburn CM, De I, Yee KF, Srivastava A. Design and integration considerations for end-of-the roadmap ultrashallow junctions Journal of Vacuum Science & Technology B. 18: 338-345. DOI: 10.1116/1.591195 |
0.432 |
|
| 2000 |
Ahmed K, De I, Osburn C, Wortman J, Hauser J. Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L/sub eff/ and R/sub sd/ of LDD MOSFETs Ieee Transactions On Electron Devices. 47: 891-893. DOI: 10.1109/16.831010 |
0.337 |
|
| 2000 |
De I, Johri D, Srivastava A, Osburn CM. Impact of gate workfunction on device performance at the 50 nm technology node Solid-State Electronics. 44: 1077-1080. DOI: 10.1016/S0038-1101(99)00323-8 |
0.399 |
|
| 1999 |
De I, Osburn CM. Impact of super-steep-retrograde channel doping profiles on the performance of scaled devices Ieee Transactions On Electron Devices. 46: 1711-1717. DOI: 10.1109/16.777161 |
0.379 |
|
| 1998 |
Srivastava A, Heinisch HH, Vogel E, Parker C, Osburn CM, Masnari NA, Wortman JJ, Hauser JR. Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 μm PMOSFETs Materials Research Society Symposium - Proceedings. 525: 163-170. DOI: 10.1557/Proc-525-163 |
0.477 |
|
| 1998 |
Yee KF, Osburn CM, Masnari NA, Hauser JR, Parker CG, Lucovsky G, Henson WK, Wortman JJ, Kippenberg T, Kuerschner S. Evaluation and comparison of 3.0 nm gate-stack dielectrics for tenth-micron technology NMOSFETs Materials Research Society Symposium - Proceedings. 525: 157-162. DOI: 10.1557/Proc-525-157 |
0.473 |
|
| 1998 |
Sun J, Bartholomew RF, Bellur K, Srivastava A, Osburn CM, Masnari NA, Westhoff R. Parasitic Resistance Considerations of Using Elevated Source/Drain Technology for Deep Submicron Metal Oxide Semiconductor Field Effect Transistors Journal of the Electrochemical Society. 145: 2131-2137. DOI: 10.1149/1.1838607 |
0.445 |
|
| 1998 |
Harrington WL, Magee CW, Pawlik M, Downey DF, Osburn CM, Felch SB. Techniques and applications of secondary ion mass spectrometry and spreading resistance profiling to measure ultrashallow junction implants down to 0.5 keV B and BF2 Journal of Vacuum Science & Technology B. 16: 286-291. DOI: 10.1116/1.589796 |
0.329 |
|
| 1998 |
Sun JJ, Osburn CM. Impact of epi facets on deep submicron elevated source/drain MOSFET characteristics Ieee Transactions On Electron Devices. 45: 1377-1380. DOI: 10.1109/16.678583 |
0.367 |
|
| 1998 |
Prussin S, Bil CA, Downey DF, Meloni ML, Osburn CM. Characterization of ultra-shallow junctions with tapered groove profilometry and other techniques Characterization and Metrology For Ulsi Technology. 449: 266-271. DOI: 10.1063/1.56899 |
0.308 |
|
| 1998 |
Osburn CM, Bellur KR. Low parasitic resistance contacts for scaled ULSI devices Thin Solid Films. 332: 428-436. DOI: 10.1016/S0040-6090(98)01046-3 |
0.425 |
|
| 1997 |
Sun J, Bartholomew RF, Bellur K, Srivastava A, Osburn CM, Masnari NA, Westhoff R. A Comparative Study of n+/p Junction Formation for Deep Submicron Elevated Source/Drain Metal Oxide Semiconductor Field Effect Transistors Journal of the Electrochemical Society. 144: 3659-3664. DOI: 10.1149/1.1838066 |
0.492 |
|
| 1997 |
Sun JJ, Bartholomew RF, Bellur K, Srivastava A, Osburn CM, Masnari NA. The effect of the elevated source/drain doping profile on performance and reliability of deep submicron MOSFETs Ieee Transactions On Electron Devices. 44: 1491-1498. DOI: 10.1109/16.622606 |
0.401 |
|
| 1997 |
Downey DF, Osburn CM, Cummings JJ, Daryanani S, Falk SW. Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants Thin Solid Films. 308: 562-569. DOI: 10.1016/S0040-6090(97)00494-X |
0.392 |
|
| 1997 |
Zhang KX, Osburn CM. The impact of in-situ rapid thermal gate dielectric processes on deep submicron MOSFETs Solid-State Electronics. 41: 619-625. DOI: 10.1016/S0038-1101(96)00195-5 |
0.394 |
|
| 1996 |
Zhang KX, Osburn CM, Hames G, Parker C, Bayoumi A. A 0.25 μm MOSFET Technology Using In Situ Rapid Thermal Gate Dielectrics Journal of the Electrochemical Society. 143: 744-749. DOI: 10.1149/1.1836511 |
0.426 |
|
| 1996 |
Osburn CM, Tsai JY, Sun J. Metal silicides: active elements of ULSI contacts Journal of Electronic Materials. 25: 1725-1739. DOI: 10.1007/S11664-996-0028-X |
0.399 |
|
| 1995 |
Tsai J, Osburn CM, Hsia SL. Silicidation Strategy Of Sub-0.1 μm Junctions for Deep Submicron Devices Mrs Proceedings. 402: 245. DOI: 10.1557/Proc-402-245 |
0.464 |
|
| 1993 |
Hong F, Patnaik BK, Rozgonyi GA, Osburn CM. Self-aligned epitaxial CoSi2 formation from multilayer Co/ Ti-Si(100) by a two-step RTA process Materials Research Society Symposium Proceedings. 303: 69-74. DOI: 10.1557/Proc-303-69 |
0.404 |
|
| 1992 |
Xiao ZG, Canovai CA, Osburn CM, Rozgonyi GA. Partial agglomeration during Co silicide film formation Journal of Materials Research. 7: 269-272. DOI: 10.1557/Jmr.1992.0269 |
0.338 |
|
| 1992 |
Osburn CM, Chevacharoenkul S, McGuire GE. Junction Formation and Poly‐Si Doping for Scaled Sub‐Micron CMOS Technology Journal of the Electrochemical Society. 139: 2287-2298. DOI: 10.1149/1.2221217 |
0.439 |
|
| 1992 |
Chapman RC, Smith P, Adu RP, McGuire GE, Canovai C, Osburn C. Use of scanning tunneling microscopy and transmission electron microscopy to quantify and characterize CoSi2 roughness Journal of Vacuum Science & Technology B. 10: 1329-1334. DOI: 10.1116/1.585863 |
0.314 |
|
| 1992 |
Wang Q, Osburn CM, Canovai CA. Ultra-shallow junction formation using silicide as a diffusion source and low thermal budget Ieee Transactions On Electron Devices. 39: 2486-2496. DOI: 10.1109/16.163462 |
0.449 |
|
| 1992 |
Choi CS, Wang Q, Osburn CM, Ruggles GA, Shah AS. Electrical characteristics of TiB/sub 2/ for ULSI applications Ieee Transactions On Electron Devices. 39: 2341-2345. DOI: 10.1109/16.158806 |
0.391 |
|
| 1991 |
Osburn CM, Wang QF, Kellam M, Canovai C, Smith PL, McGuire GE, Xiao ZG, Rozgonyi GA. Incorporation of metal silicides and refractory metals in VLSI technology Applied Surface Science. 53: 291-312. DOI: 10.1016/0169-4332(91)90279-S |
0.423 |
|
| 1990 |
Xiao ZG, Jiang H, Honeycutt J, Osburn CM, Mcguire G, Rozgonyi GA. Tisi 2 Thin Films Formed on Crystalline and Amorphous Silicon Mrs Proceedings. 182: 167. DOI: 10.1557/Proc-182-65 |
0.386 |
|
| 1990 |
Choi C, Ruggles GA, Osburn CM, Shea P, Xing GC. Preparation and Characterization of LPCVD TiB 2 Thin Films Mrs Proceedings. 181. DOI: 10.1557/Proc-181-455 |
0.38 |
|
| 1989 |
Wen D‐, Smith P, Osburn CM, Rozgonyi GA. Elimination of End‐of‐Range Shallow Junction Implantation Damage during CMOS Titanium Silicidation Journal of the Electrochemical Society. 136: 466-471. DOI: 10.1149/1.2096656 |
0.334 |
|
| 1988 |
Osburn CM, Brat T, Sharma D, Griffis D, Lin S, Corcoran S, Chu WK, Parikh N. The Effects of Titanium Suicide Formation on Dopant Redistribution Journal of the Electrochemical Society. 135: 1490-1504. DOI: 10.1149/1.2096041 |
0.428 |
|
| 1988 |
Ozturk M, Wortman J, Osburn C, Ajmera A, Rozgonyi G, Frey E, Chu W, Lee C. Optimization of the germanium preamorphization conditions for shallow-junction formation Ieee Transactions On Electron Devices. 35: 659-668. DOI: 10.1109/16.2510 |
0.32 |
|
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