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Gerald Lucovsky - Publications

Affiliations: 
Physics North Carolina State University, Raleigh, NC 
Area:
ultra-thin Si oxyitride devices
Website:
http://www.physics.ncsu.edu/people/faculty_lucovsky.php
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Year Citation  Score
2015 Ives RL, Zeller D, Lucovsky G, Schamiloglu E, Marsden D, Collins G, Nichols K, Karimov R. Multipactor Coating for Sapphire RF Windows Using Remote Plasma-Assisted Deposition Ieee Transactions On Plasma Science. 43: 2571-2580. DOI: 10.1109/Tps.2015.2450678  0.634
2014 Lucovsky G, Zeller DJ, Cheng C, Zhang Y. Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices Surface and Coatings Technology. 242: 183-186. DOI: 10.1016/J.Surfcoat.2013.06.104  0.729
2013 Lucovsky G, Parsons G, Zeller D, Kim J. Spectroscopic detection of medium range order in device grade hydrogenated amorphous silicon Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.04Cr10  0.794
2013 Lucovsky G. Band-edge electronic structure and pre-existing defects in remote plasma deposited non-crystalline SiO2and GeO2 Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.04Ch10  0.479
2013 Lucovsky G, Kim J. Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 ≥ n > 3, and TiO 2-HfO2 alloys Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4774101  0.592
2013 Lucovsky G, Kim J, Wu K, Zeller D. Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4773923  0.744
2013 Lucovsky G. Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2and GeO2 Solid-State Electronics. 83: 30-36. DOI: 10.1016/J.Sse.2013.01.028  0.486
2013 Lucovsky G, Kim J, Wu K, Zeller D, Papas B, Whitten JL. Non-crystalline SiO2: Processing induced pre-Existing defects associated with vacated O-atom intrinsic bonding sites Physics Procedia. 44: 99-107. DOI: 10.1016/J.Phpro.2013.04.013  0.752
2013 Lucovsky G, Parsons G, Zeller D, Wu K, Papas B, Whitten J, Lujan R, Street RA. Spectroscopic detection of medium range order in hydrogenated amorphous silicon, a-Si(H): Applications in photovolatics, thin film transistors and Si-based microelectronics Physics Procedia. 44: 91-98. DOI: 10.1016/J.Phpro.2013.04.012  0.766
2013 Lucovsky G, Kim JW, Nordlund D. First demonstration of device-quality symmetric N-MOS and P-MOS capacitors on p-type and n-type crystalline Ge substrates Microelectronic Engineering. 109: 370-373. DOI: 10.1016/J.Mee.2013.03.031  0.451
2012 Lucovsky G, Miotti L, Bastos KP. O-Vacancies in (i) nano-crystalline HfO 2 and (i) non-crystalline SiO 2 and Si 3N 4 studied by X-ray absorption spectroscopy Journal of Nanoscience and Nanotechnology. 12: 4811-4819. PMID 22905534 DOI: 10.1166/Jnn.2012.4912  0.461
2012 Lucovsky G, Miotti L, Bastos KP, Adamo C, Schlom DG, Arrell G. Spectroscopic detection of hopping induced mixed valence for ti and sc in gdsc 1-xti xo 3 for x >0.165 Journal of Nanoscience and Nanotechnology. 12: 4749-4756. PMID 22905526 DOI: 10.1166/Jnn.2012.4911  0.343
2011 Lucovsky G, Zeller D. Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates. Journal of Nanoscience and Nanotechnology. 11: 7974-81. PMID 22097515 DOI: 10.1166/Jnn.2011.5090  0.738
2011 Lucovsky G, Kim J. Remote plasma processing of sapphire substrates for deposition of TiN and TiO2. Journal of Nanoscience and Nanotechnology. 11: 7962-8. PMID 22097513 DOI: 10.1166/Jnn.2011.5089  0.552
2011 Lucovsky G, Kim J. Remote plasma processing of sapphire substrates for deposition of TiN and TiO 2 Journal of Nanoscience and Nanotechnology. 11: 7962-7968. DOI: 10.1166/jnn.2011.5089  0.423
2011 Lucovsky G, Miotti L, Bastos KP. Detection of multivalency charge states in complex and elemental transition metal oxides by X-ray absorption spectroscopy: Controlled multivalency as a pathway to device functionality Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.10Pf04  0.398
2011 Lucovsky G. Multiplet theory for conduction band edge and O-vacancy defect states in SiO2, Si3N4, and Si oxynitride alloy thin films Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.04Dc09  0.527
2011 Lucovsky G, Miotti L, Bastos KP. Many-electron multiplet theory applied to o-atom vacancies in high-κ dielectrics Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.04Da15  0.347
2011 Katz EJ, Zhang Z, Hughes HL, Chung KB, Lucovsky G, Brillson LJ. Nanoscale depth-resolved electronic properties of SiO2/SiO x/SiO2 for device-tolerant electronics Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29: 0110271-0110277. DOI: 10.1116/1.3543712  0.467
2011 Lucovsky G, Miotti L, Bastos KP. O-vacancies in (I) nanocrystalline HfO2 and (I) noncrystalline SiO2 and Si3 N4 studied by x-ray absorption spectroscopy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29: 01AA011-01AA019. DOI: 10.1116/1.3533758  0.307
2011 Lucovsky G, Zeller D, Wu K, Kim J. Electron injection from n-type Si substrates into (i) Transition metal high-k dielectrics and (ii) SiO2 and Si oxynitride alloys: Conduction band edge states and negative ion state electron trap differences 2011 12th International Conference On Ultimate Integration On Silicon, Ulis 2011. 187-190. DOI: 10.1109/ULIS.2011.5757999  0.342
2011 Soares GV, Krug C, Miotti L, Bastos KP, Lucovsky G, Baumvol IJR, Radtke C. Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate Applied Physics Letters. 98. DOI: 10.1063/1.3574093  0.449
2011 Gokce B, Aspnes DE, Lucovsky G, Gundogdu K. Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping Applied Physics Letters. 98. DOI: 10.1063/1.3537809  0.451
2011 Washington JS, Joseph EA, Raoux S, Jordan-Sweet JL, Miller D, Cheng HY, Schrott AG, Chen CF, Dasaka R, Shelby B, Lucovsky G, Paesler MA, Miotti L, Lung HL, Zhang Y, et al. Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te 5 Journal of Applied Physics. 109. DOI: 10.1063/1.3524510  0.798
2011 Lucovsky G, Zeller D, Wu K, Whitten JL. Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2 Microelectronic Engineering. 88: 1537-1540. DOI: 10.1016/J.Mee.2011.03.152  0.422
2011 Lucovsky G, Parsons G, Zeller D, Wu K, Papas B, Whitten J, Lujan R, Street RA. Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H) Journal of Optoelectronics and Advanced Materials. 13: 1586-1589.  0.524
2010 Lucovsky G, Phillips JC. Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO(2) and Related Materials: Device Applications. Nanoscale Research Letters. 5: 550-558. PMID 20672114 DOI: 10.1007/S11671-009-9520-6  0.437
2010 Miotti L, Bastos KP, Radtke C, Lucovsky G. Tetragonal phase in Ge doped HfO2 films on Si investigated by X-ray absorption spectroscopy Materials Research Society Symposium Proceedings. 1194: 1-5. DOI: 10.1557/Proc-1194-A01-02  0.454
2010 Bastos KP, Miotti L, Lucovsky G, Chung KB, Nordlund D. Monoclinic textured HfO2 films on GeOx Ny /Ge (100) stacks using interface reconstruction by controlled thermal processing Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 662-664. DOI: 10.1116/1.3430563  0.444
2010 Miotti L, Bastos KP, Lucovsky G, Radtke C, Nordlund D. Ge doped HfO2 thin films investigated by x-ray absorption spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 693-696. DOI: 10.1116/1.3430562  0.497
2010 Seo H, Kim YB, Lucovsky G, Kim ID, Chung KB, Kobayashi H, Choi DK. Enhanced leakage current properties of Ni-doped Ba0.6Sr 0.4TiO3 thin films driven by modified band edge state Journal of Applied Physics. 107. DOI: 10.1063/1.3291124  0.588
2010 Lucovsky G, Washington JP, Miotti L, Paesler M. Analysis of the forgotten parts of the Ge K edge spectra: Life before the EXAFS oscillations Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 844-847. DOI: 10.1002/Pssc.200982887  0.411
2010 Lucovsky G. Dimensional constraints and percolation theory: Physical mechanisms controlling electronic structure and defects in high-k transition metal oxide dielectrics Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 743-746. DOI: 10.1002/Pssc.200982843  0.449
2010 Lucovsky G, Phillips JC. A microscopic bonding model for the compositional dependence of the first sharp diffraction peak (FSDP) in GexSe1-x alloys Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 889-892. DOI: 10.1002/Pssc.200982842  0.376
2010 Lucovsky G. Strain-reducing chemical bonding self-organizations in nanocrystalline composites and non-crystalline glasses and thin films Physica Status Solidi (a) Applications and Materials Science. 207: 631-634. DOI: 10.1002/Pssa.200982841  0.385
2009 Washington JS, Joseph E, Paesler MA, Lucovsky G, Jordan-Sweet JL, Raoux S, Chen CF, Pyzyna A, Dasaka RK, Schrott A, Lam C, Ravel B, Woicik J. The influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te 5 Materials Research Society Symposium Proceedings. 1160: 163-168. DOI: 10.1557/Proc-1160-H13-08  0.793
2009 Lucovsky G, Long JP, Chung KB, Seo H. Atomically-engineered interfaces between crystalline-Ge substrates and i) Nanocrystalline HfO2 and ii) Non-Crystalline Hf Si oxynitride high-K dielectrics? E-Journal of Surface Science and Nanotechnology. 7: 381-388. DOI: 10.1380/Ejssnt.2009.381  0.648
2009 Lucovsky G, Phillips JC. Chemical bonding self-organizations and percolation theory applied to minimization of macroscopic strain: Internal interfaces in non-crystalline and nano-crystalline thin films? E-Journal of Surface Science and Nanotechnology. 7: 375-380. DOI: 10.1380/Ejssnt.2009.375  0.331
2009 Seo H, Chung KB, Long JP, Lucovsky G. Preparation of native oxide and carbon-minimized ge surface by NH 4OH -based cleaning for high- k/Ge MOS gate stacks Journal of the Electrochemical Society. 156: H813-H817. DOI: 10.1149/1.3212848  0.553
2009 Lucovsky G, Long JP, Chung KB, Seo H, Watts B, Vasic R, Ulrich MD. Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 294-299. DOI: 10.1116/1.3072917  0.722
2009 Lucovsky G. Intrinsic bonding defects in thin-film non-crystalline solids: Amorphous silicon (-Si), hydrogenated amorphous silicon (a-Si:H), amorphous selenium (a-Se) and amorphous selenium-arsenic alloys (a-AsxSe1-x) Philosophical Magazine. 89: 2449-2460. DOI: 10.1080/14786430902729540  0.475
2009 Chung KB, Long JP, Seo H, Lucovsky G, Nordlund D. Thermal evolution and electrical correlation of defect states in Hf-based high- κ dielectrics on n -type Ge (100): Local atomic bonding symmetry Journal of Applied Physics. 106. DOI: 10.1063/1.3236679  0.49
2009 Seo H, Bellenger F, Chung KB, Houssa M, Meuris M, Heyns M, Lucovsky G. Extrinsic interface formation of Hf O2 and Al2 O 3 /Ge Ox gate stacks on Ge (100) substrates Journal of Applied Physics. 106. DOI: 10.1063/1.3204026  0.405
2009 Chung KB, Lucovsky G, Lee WJ, Cho MH, Jeon H. Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7 Ge0.3 layers Applied Physics Letters. 94. DOI: 10.1063/1.3077014  0.459
2009 Lucovsky G, Chung KB, Miotti L, Bastos KP, Amado C, Schlom D. Comparisons between intrinsic bonding defects in d0 transition metal oxide such as HfO2, and impurity atom defects in d0 complex oxides such as GdScO3 Solid-State Electronics. 53: 1273-1279. DOI: 10.1016/J.Sse.2009.10.012  0.412
2009 Lucovsky G, Chung KB, Kim JW, Norlund D. Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy Microelectronic Engineering. 86: 1676-1679. DOI: 10.1016/J.Mee.2009.03.005  0.43
2009 Gundogdu K, Lucovsky G, Chung KB, Kim JW, Nordlund D. Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics Microelectronic Engineering. 86: 1654-1657. DOI: 10.1016/J.Mee.2009.03.004  0.491
2009 Lucovsky G, Lee S, Long JP, Seo H, Lüning J. Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks Microelectronic Engineering. 86: 224-234. DOI: 10.1016/J.Mee.2008.05.023  0.707
2009 Lucovsky G, Phillips JC. Strain-eliminating chemical bonding self-organizations within intermediate phase (IP) windows in chalcogenide, oxide and nitride non-crystalline bulk glasses and deposited thin film binary, ternary and quaternary alloys Journal of Non-Crystalline Solids. 355: 1786-1791. DOI: 10.1016/J.Jnoncrysol.2009.04.044  0.415
2009 Lucovsky G, Seo H, Long JP, Chung KB, Vasic R, Ulrich M. Defect states in HfO2 on deposited on Ge(1 1 1) and Ge(1 0 0) substrates Applied Surface Science. 255: 6443-6450. DOI: 10.1016/J.Apsusc.2008.09.070  0.706
2009 Lucovsky G, Baker DA, Washington JP, Paesler MA. Microscopic local bonding and optically-induced switching for Ge2Sb2Te5 alloys: A tale of four pseudo-binary and three binary tie-lines in Ge-Sb-Te phase field Physica Status Solidi (C) Current Topics in Solid State Physics. 6: S79-S82. DOI: 10.1002/Pssc.200881313  0.353
2009 Lucovsky G, Phillips JC. Symmetry determined medium range order (MRO) contributions to the first sharp diffraction peak (FSDP) in non-crystalline oxide and chalcogenide glasses Physica Status Solidi (B) Basic Research. 246: 1806-1812. DOI: 10.1002/Pssb.200982008  0.372
2009 Lucovsky G. Controlled chemical phase separation in binary and ternary composites: A pathway to isotropic optical and electrical behavior for device applications Physica Status Solidi (a) Applications and Materials Science. 206: 915-918. DOI: 10.1002/Pssa.200881312  0.367
2009 Lucovsky G, Phillips JC. Microscopic description of strain-reducing chemical bonding self-organizations in non-crystalline alloys Physica Status Solidi (a) Applications and Materials Science. 206: 885-891. DOI: 10.1002/Pssa.200881311  0.373
2008 Lucovsky G, Long JP, Seo H, Chung BK, Lee S. Elimination of native Ge dielectrics at Ge/High-k dielectric interfaces for Ge MOS devices Ecs Transactions. 16: 381-395. DOI: 10.1149/1.2986796  0.492
2008 Strzhemechny YM, Bataiev M, Tumakha SP, Goss SH, Hinkle CL, Fulton CC, Lucovsky G, Brillson LJ. Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2- SiO2-Si stacks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 232-243. DOI: 10.1116/1.2830692  0.781
2008 Chung KB, Seo H, Long JP, Lucovsky G. Suppression of defect states in HfSiON gate dielectric films on n -type Ge(100) substrates Applied Physics Letters. 93. DOI: 10.1063/1.3005422  0.665
2008 Lee S, Long JP, Lucovsky G, Lüning J. Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates Thin Solid Films. 517: 155-158. DOI: 10.1016/J.Tsf.2008.08.099  0.64
2008 Lee S, Seo H, Lucovsky G, Fleming LB, Ulrich MD, Lüning J. Bulk defects in nano-crystalline and in non-crystalline HfO2-based thin film dielectrics Thin Solid Films. 517: 437-440. DOI: 10.1016/J.Tsf.2008.08.098  0.594
2008 Lee S, Long JP, Lucovsky G, Whitten JL, Seo H, Lüning J. Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices Microelectronics Reliability. 48: 364-369. DOI: 10.1016/J.Microrel.2007.07.068  0.718
2008 Lee S, Long JP, Lucovsky G, Whitten JL, Seo H, Lüning J. Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices Microelectronics Reliability. 48: 364-369. DOI: 10.1016/j.microrel.2007.07.068  0.323
2008 Lucovsky G, Phillips JC. Reversible chemical phase separation in on-state of art ReWritable (RW) Ge2Sb2Te5 optical phase change memories Journal of Non-Crystalline Solids. 354: 2753-2756. DOI: 10.1016/J.Jnoncrysol.2007.09.059  0.362
2008 Lucovsky G, Kasap SO, Phillips JC. Defect scaling in non-crystalline floppy/under-constrained and rigid/over-constrained thin films: Applications to a-Se, a-Si, and a-Si(H) Journal of Non-Crystalline Solids. 354: 2724-2727. DOI: 10.1016/J.Jnoncrysol.2007.09.048  0.422
2008 Paesler MA, Baker DA, Lucovsky G. Bond constraint theory studies of chalcogenide phase change memories Journal of Non-Crystalline Solids. 354: 2706-2710. DOI: 10.1016/J.Jnoncrysol.2007.09.045  0.343
2008 Lucovsky G, Phillips JC. Length scale discontinuities between non-crystalline and nano-crystalline thin films: Chemical bonding self-organization, broken constraints and reductions of macroscopic strain Journal of Non-Crystalline Solids. 354: 2702-2705. DOI: 10.1016/J.Jnoncrysol.2007.09.044  0.35
2008 Lucovsky G, Lee S, Long JP, Seo H, Lüning J. Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates Applied Surface Science. 254: 7933-7937. DOI: 10.1016/J.Apsusc.2008.03.157  0.702
2008 Agarwal SC, Paesler MA, Baker DA, Taylor PC, Lucovsky G, Edwards A. Bond constraint theory and the quest for the glass computer Pramana - Journal of Physics. 70: 245-254. DOI: 10.1007/S12043-008-0043-Y  0.314
2007 Siemons W, Koster G, Yamamoto H, Harrison WA, Lucovsky G, Geballe TH, Blank DH, Beasley MR. Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping. Physical Review Letters. 98: 196802. PMID 17677645 DOI: 10.1103/Physrevlett.98.196802  0.319
2007 Lee S, Lucovsky G, Long JP, Luning J. Plasma Deposition of HfO2 and TiO2 onto Plasma-Nitrided Ge Surfaces The Japan Society of Applied Physics. 2007: 776-777. DOI: 10.7567/Ssdm.2007.F-5-2  0.483
2007 Lucovsky G, Seo H, Fleming LB, Ulrich MD, Lüning J. Spectroscopic studies of band edge electronic and defect states in elemental high-k oxide dielectrics and Si oxynitride alloys onto Si(100) substrates Ecs Transactions. 8: 105-110. DOI: 10.1149/1.2767294  0.376
2007 Lucovsky G, Seo H, Fleming LB, Ulrich MD, Lüning J. Spectroscopic studies of band edge electronic and defect states in elemental high-k oxide dielectrics and Si oxynitride alloys onto Si(100) substrates Ecs Transactions. 8: 105-110. DOI: 10.1149/1.2767294  0.376
2007 Lucovsky G, Seo H, Lee S, Fleming LB, Ulrich MD, Lüning J, Lysaght P, Bersuker G. Intrinsic electronically active defects in transition metal elemental oxides Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 1899-1909. DOI: 10.1143/Jjap.46.1899  0.71
2007 Chen DK, Mamouni FE, Zhou XJ, Schrimpf RD, Fleetwood DM, Galloway KF, Lee S, Seo H, Lucovsky G, Jun B, Cressler JD. Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors Ieee Transactions On Nuclear Science. 54: 1931-1937. DOI: 10.1109/Tns.2007.910862  0.547
2007 Lucovsky G, Phillips JC. A new class of intermediate phases in non-crystalline films based on a confluent double percolation mechanism Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/45/455219  0.385
2007 Lucovsky G, Phillips JC. Intermediate phases in binary and ternary alloys: A new perspective on semi-empirical bond constraint theory Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/45/455218  0.339
2007 Lucovsky G, Seo H, Fleming LB, Ulrich MD, Lüning J. Spectroscopic studies of band edge electronic states in elemental high-k oxide dielectrics on Si and Ge substrates Aip Conference Proceedings. 931: 315-319. DOI: 10.1063/1.2799390  0.345
2007 Lucovsky G, Seo H, Fleming LB, Ulrich MD, Lüning J. Spectroscopic studies of band edge electronic states in elemental high-k oxide dielectrics on Si and Ge substrates Aip Conference Proceedings. 931: 315-319. DOI: 10.1063/1.2799390  0.345
2007 Fleming L, Fulton CC, Lucovsky G, Rowe JE, Ulrich MD, Lüning J. Local bonding analysis of the valence and conduction band features of TiO2 Journal of Applied Physics. 102. DOI: 10.1063/1.2764004  0.617
2007 Seo H, Lee S, Ju B, Lucovsky G, Lüning J. XAS studies of chemical bonding of nitrogen and oxygen atoms in Ti/Zr/Hf high-K gate dielectrics Aip Conference Proceedings. 882: 487-489. DOI: 10.1063/1.2644567  0.472
2007 Lucovsky G, Seo H, Fleming LB, Lüning J, Lysaght P, Bersuker G. Studies of bonding defects, and defect state suppression in HfO2 by soft X-ray absorption and photoelectron spectroscopies Surface Science. 601: 4236-4241. DOI: 10.1016/J.Susc.2007.04.197  0.572
2007 Lucovsky G, Whitten JL. Metal gate electrodes: Theoretical studies of Zr/ZrO2 and Hf/HfO2 interfaces Surface Science. 601: 4138-4143. DOI: 10.1016/J.Susc.2007.04.057  0.345
2007 Lucovsky G, Phillips JC. Chemical self-organization length scales in non- and nano-crystalline thin films Solid-State Electronics. 51: 1308-1318. DOI: 10.1016/J.Sse.2007.06.001  0.385
2007 Lucovsky G, Fulton CC, Ju BS, Stoute NA, Seo H, Aspnes DE, Lüning J. Corrigendum to: "Suppression of Jahn-Teller term-split band edge states in the X-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3". [Radiat. Phys. Chem. 75 (2006) 1591-1595] (DOI:10.1016/j.radphyschem.2006.05.004) Radiation Physics and Chemistry. 76: 907. DOI: 10.1016/J.Radphyschem.2007.01.001  0.724
2007 Lucovsky G, Whitten JL. Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions Microelectronic Engineering. 84: 2259-2262. DOI: 10.1016/J.Mee.2007.04.073  0.372
2007 Seo H, Lucovsky G, Fleming LB, Ulrich MD, Lüning J, Koster G, Geballe TH. Length scales for coherent π-bonding interactions in complex high-k oxide dielectrics and their interfaces Microelectronic Engineering. 84: 2298-2301. DOI: 10.1016/J.Mee.2007.04.069  0.482
2007 Lucovsky G, Seo H, Lee S, Fleming LB, Ulrich MD, Lüning J. Defect reduction by suppression of π-bonding coupling in nano- and non-crystalline high-(medium)-κ gate dielectrics Microelectronic Engineering. 84: 2350-2353. DOI: 10.1016/J.Mee.2007.04.062  0.532
2007 Paesler MA, Baker DA, Lucovsky G, Edwards AE, Taylor PC. EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5 Journal of Physics and Chemistry of Solids. 68: 873-877. DOI: 10.1016/J.Jpcs.2007.03.041  0.35
2007 Lucovsky G, Baker DA, Paesler MA, Phillips JC. Spectroscopic and electrical detection of intermediate phases and chemical bonding self-organizations in (i) dielectric films for semiconductor devices, and (ii) chalcogenide alloys for optical memory devices Journal of Non-Crystalline Solids. 353: 1713-1722. DOI: 10.1016/J.Jnoncrysol.2007.01.041  0.475
2007 Lucovsky G, Phillips J. A self-consistent model for defect states in a-Si and a-Si:H Journal of Materials Science: Materials in Electronics. 18: 463-467. DOI: 10.1007/S10854-007-9250-4  0.45
2007 Maeda K, Sakai T, Sakai K, Ikari T, Munzar M, Tonchev D, Kasap SO, Lucovsky G. Effect of Ga on the structure of Ge-Se-Ga glasses from thermal analysis, Raman and XPS measurements Journal of Materials Science: Materials in Electronics. 18: 367-370. DOI: 10.1007/S10854-007-9238-0  0.33
2007 Baker DA, Paesler MA, Lucovsky G. Local bonding arrangements in amorphous Ge 2Sb 2 Te 5: The importance of Ge and Te bonding Journal of Materials Science: Materials in Electronics. 18: 399-403. DOI: 10.1007/S10854-007-9233-5  0.42
2007 Lucovsky G, Lüning J, Fleming LB, Ulrich MD, Rowe JE, Seo H, Lee S, Lysaght P, Bersuker G. Spectroscopic studies of O-vacancy defects in transition metal oxides Journal of Materials Science: Materials in Electronics. 18: 263-266. DOI: 10.1007/S10854-007-9192-X  0.617
2007 Paesler MA, Baker DA, Lucovsky G, Taylor PC, Washington JS. Bond constraint theory and EXAFS studies of local bonding structures of Ge2Sb2Te4, Ge2Sb2Te 5, and Ge2Sb2Te7 Journal of Optoelectronics and Advanced Materials. 9: 2996-3001.  0.77
2006 Baker DA, Paesler MA, Lucovsky G, Agarwal SC, Taylor PC. Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5. Physical Review Letters. 96: 255501. PMID 16907317 DOI: 10.1103/Physrevlett.96.255501  0.372
2006 Lucovsky G, Lee S, Luning J. Non-crystalline Stable Gate Dielectrics for Advanced Nano-Cmos Devices The Japan Society of Applied Physics. 2006: 408-409. DOI: 10.7567/Ssdm.2006.P-1-4  0.483
2006 Osburn CM, Campbell SA, Demkov A, Eisenbraun E, Garfunkel E, Gustafsson T, Kingon AI, Lee J, Lichtenwalner DJ, Lucovsky G, Ma TP, Maria JP, Misra V, Nemanich RJ, Parsons GN, et al. Materials and processes for high k gate stacks: Results from the FEP transition center Ecs Transactions. 3: 389-415. DOI: 10.1149/1.2355729  0.448
2006 Lucovsky G. Part II. Conduction band-edge states associated with removal of d-state degeneracies by the static Jahn-Teller effect International Journal of High Speed Electronics and Systems. 16: 263-300. DOI: 10.1142/S0129156406003643  0.405
2006 Lucovsky G. Part I: Bond strain and defects at Si-SiO2 and dielectric interfaces in high-k gate stacks International Journal of High Speed Electronics and Systems. 16: 241-261. DOI: 10.1142/S0129156406003631  0.454
2006 Ulrich MD, Rowe JE, Keister JW, Niimi H, Fleming L, Lucovsky G. Comparison of ultrathin SiO 2/Si(100) and SiO 2/Si(111) interfaces from soft x-ray photoelectron spectroscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2132-2137. DOI: 10.1116/1.2218865  0.483
2006 Lucovsky G, Fleetwood DM, Lee S, Seo H, Schrimpf RD, Felix JA, Lüning J, Fleming LB, Ulrich M, Aspnes DE. Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates Ieee Transactions On Nuclear Science. 53: 3644-3648. DOI: 10.1109/Tns.2006.886211  0.516
2006 Zeman MC, Fulton CC, Lucovsky G, Nemanich RJ, Yang W. Publisher’s Note: “Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy” [J. Appl. Phys. 99, 023519 (2006)] Journal of Applied Physics. 99: 109902. DOI: 10.1063/1.2201707  0.596
2006 Fulton CC, Lucovsky G, Nemanich RJ. Electronic properties of the Zr-ZrO 2-SiO 2-Si (100) gate stack structure Journal of Applied Physics. 99. DOI: 10.1063/1.2181282  0.685
2006 Zeman MC, Fulton CC, Lucovsky G, Nemanich RJ, Yang WC. Thermal stability of TiO 2, ZrO 2, or Hf O 2 on Si(100) by photoelectron emission microscopy Journal of Applied Physics. 99. DOI: 10.1063/1.2163984  0.689
2006 Edge LF, Schlom DG, Stemmer S, Lucovsky G, Luning J. Detection of nanocrystallinity by X-ray absorption spectroscopy in thin film transition metal/rare-earth atom, elemental and complex oxides Radiation Physics and Chemistry. 75: 1608-1612. DOI: 10.1016/J.Radphyschem.2006.05.005  0.407
2006 Lucovsky G, Fulton CC, Ju BS, Stoute NA, Tao S, Aspnes DE, Lüning J. Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 Radiation Physics and Chemistry. 75: 1591-1595. DOI: 10.1016/J.Radphyschem.2006.05.004  0.707
2006 Lucovsky G, Hinkle CL, Fulton CC, Stoute NA, Seo H, Lüning J. Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2 Radiation Physics and Chemistry. 75: 2097-2101. DOI: 10.1016/J.Radphyschem.2005.07.062  0.793
2006 Fulton CC, Edge LF, Lucovsky G, Lüning J. A study of conduction band edge states in complex oxides by X-ray absorption spectroscopy Radiation Physics and Chemistry. 75: 1934-1938. DOI: 10.1016/J.Radphyschem.2005.07.045  0.645
2006 Lucovsky G, Seo H, Fleming LB, Ulrich MD, Lüning J, Lysaght P, Bersuker G. Intrinsic bonding defects in transition metal elemental oxides Microelectronics Reliability. 46: 1623-1628. DOI: 10.1016/J.Microrel.2006.07.032  0.598
2006 Lucovsky G, Phillips JC. Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs, respectively) Journal of Non-Crystalline Solids. 352: 4509-4516. DOI: 10.1016/J.Jnoncrysol.2006.03.123  0.423
2006 Lucovsky G, Phillips JC. Network disruption and modification in arsenic and germanium chalcogenides by the addition of univalent metal sulfides and selenides: Comparisons with network disruption and modification in zirconium silicate alloys Journal of Non-Crystalline Solids. 352: 1534-1538. DOI: 10.1016/J.Jnoncrysol.2005.12.022  0.383
2006 Lucovsky G, Phillips JC. Reduction of bonding constraints by self-organization in gate dielectrics for a-Si:H thin film transistors (TFTs) and crystalline Si field effect transistors (FETs) Journal of Non-Crystalline Solids. 352: 1711-1714. DOI: 10.1016/J.Jnoncrysol.2005.11.130  0.471
2006 Baker DA, Paesler MA, Lucovsky G, Taylor PC. EXAFS study of amorphous Ge2Sb2Te5 Journal of Non-Crystalline Solids. 352: 1621-1623. DOI: 10.1016/J.Jnoncrysol.2005.11.079  0.437
2006 Lucovsky G. Band edge electronic structure of transition metal/rare earth oxide dielectrics Applied Surface Science. 253: 311-321. DOI: 10.1016/J.Apsusc.2006.06.001  0.484
2005 Rayner GB, Lucovsky G, Kang D. Chemical phase separation in Zr silicate alloys: An EXAFS study distinguishing between phase separation with and without XRD detectable crystallization Physica Scripta T. 1022-1025. DOI: 10.1238/Physica.Topical.115a01022  0.729
2005 Lucovsky G, Zhang Y, Whitten JL, Schlom DG, Freeouf JL. Near edge x-ray absorption spectroscopy: A novel approach for determining conduction band edge states in transition metal oxide gate dielectrics Physica Scripta T. 335-338. DOI: 10.1238/Physica.Topical.115A00335  0.313
2005 Lucovsky G, Lüning J, Stoute NA, Seo H, Hinkle CL, Ju B. Band edge traps at spectroscopically-detected O-atom vacancies in nanocrystalline ZrO2 and HfO2: An engineering solution for elimination of O-atom vacancy defects in non-crystalline ternary silicate alloys Ecs Transactions. 1: 381-392. DOI: 10.1149/1.2209287  0.591
2005 Lucovsky G, Fulton CC, Zhang Y, Zou Y, Luning J, Edge LF, Whitten JL, Nemanich RJ, Ade H, Schlom DG, Afanase'v VV, Stesmans A, Zollner S, Triyoso D, Rogers BR. Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect Ieee Transactions On Device and Materials Reliability. 5: 65-83. DOI: 10.1109/Tdmr.2005.845804  0.664
2005 Lucovsky G, Fulton CC, Zhang Y, Luning J, Edge L, Whitten JL, Nemanich RJ, Schlom DG, Afanase'V VV. Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings Thin Solid Films. 486: 129-135. DOI: 10.1016/J.Tsf.2004.11.233  0.667
2005 Lucovsky G, Phillips JC. Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structures Thin Solid Films. 486: 200-204. DOI: 10.1016/J.Tsf.2004.11.224  0.446
2005 Lucovsky G, Phillips JC. Bond strain and defects at interfaces in high-k gate stacks Microelectronics Reliability. 45: 770-778. DOI: 10.1016/J.Microrel.2004.11.051  0.422
2005 Lucovsky G, Hong JG, Fulton CC, Stoute NA, Zou Y, Nemanich RJ, Aspnes DE, Ade H, Schlom DG. Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra Microelectronics Reliability. 45: 827-830. DOI: 10.1016/J.Microrel.2004.11.038  0.783
2005 Lucovsky G, Zhang Y, Luning J, Afanase'v VV, Stesmans A, Zollner S, Triyoso D, Rogers BR, Whitten JL. Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics Microelectronic Engineering. 80: 110-113. DOI: 10.1016/J.Mee.2005.04.052  0.447
2005 Lucovsky G, Zhang Y, Fulton CC, Zou Y, Nemanich RJ, Ade H, Whitten JL. Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: Comparisons between experiment and ab initio calculations Journal of Electron Spectroscopy and Related Phenomena. 144: 917-919. DOI: 10.1016/J.Elspec.2005.01.251  0.676
2005 Fulton CC, Lucovsky G, Zhang Y, Zou Y, Nemanich RJ, Ade H, Whitten JL. Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)x(TiOx)1-x and other complex oxides Journal of Electron Spectroscopy and Related Phenomena. 144: 913-916. DOI: 10.1016/J.Elspec.2005.01.098  0.671
2004 Cook TE, Fulton CC, Mecouch WJ, Davis RF, Lucovsky G, Nemanich RJ. Electronic properties of GaN (0001) - Dielectric interfaces International Journal of High Speed Electronics and Systems. 14: 107-125. DOI: 10.1142/S0129156404002260  0.635
2004 Bae C, Lucovsky G. Low-temperature preparation of GaN-SiO 2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 2411-2418. DOI: 10.1116/1.1807411  0.583
2004 Bae C, Lucovsky G. Low-temperature preparation of GaN-SiO 2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 2402-2410. DOI: 10.1116/1.1807396  0.621
2004 Bae C, Krug C, Lucovsky G. Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO 2 and Si 3N 4 dielectrics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 2379-2383. DOI: 10.1116/1.1806439  0.557
2004 Lucovsky G, Phillips JC. Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO 2 Interface Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2087-2096. DOI: 10.1116/1.1771676  0.397
2004 Lucovsky G, Maria JP, Phillips JC. Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO 2 and alternative gate dielectrics Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2097-2104. DOI: 10.1116/1.1771675  0.388
2004 Lucovsky G, Hong JG, Fulton CC, Zou Y, Nemanich RJ, Ade H. X-ray absorption spectra for transition metal high-κ dielectrics: Final state differences for intra- and inter-atomic transitions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2132-2138. DOI: 10.1116/1.1771670  0.765
2004 Krug C, Lucovsky G. Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 1301-1308. DOI: 10.1116/1.1755714  0.53
2004 Lucovsky G, Phillips JC. Bond strain and defects at Si-SiO2 and internal dielectric interfaces in high-k gate stacks Journal of Physics Condensed Matter. 16: S5139-S5151. DOI: 10.1088/0953-8984/16/44/011  0.446
2004 Lucovsky G, Niimi H. Remote plasma-assisted oxidation of SiC: A low temperature process for SiC-SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions Journal of Physics Condensed Matter. 16: S1815-S1837. DOI: 10.1088/0953-8984/16/17/018  0.435
2004 Afanas'ev VV, Stesmans A, Zhao C, Caymax M, Heeg T, Schubert J, Jia Y, Schlom DG, Lucovsky G. Band alignment between (100)Si and complex rare earthtransition metal oxides Applied Physics Letters. 85: 5917-5919. DOI: 10.1063/1.1829781  0.406
2004 Fulton CC, Cook TE, Lucovsky G, Nemanich RJ. Interface instabilities and electronic properties of ZrO 2 on silicon (100) Journal of Applied Physics. 96: 2665-2673. DOI: 10.1063/1.1776313  0.725
2004 Bae C, Krug C, Lucovsky G, Chakraborty A, Mishra U. Surface passivation of n-GaN by nitrided-thin-Ga 2O 3/SiO 2 and Si 3N 4 films Journal of Applied Physics. 96: 2674-2680. DOI: 10.1063/1.1772884  0.561
2004 Bae C, Krug C, Lucovsky G, Chakraborty A, Mishra U. Work-function difference between AL and n-GaN from Al-gated n-GaN/nitrided-thin-Ga 2O 3/SiO 2 metal oxide semiconductor structures Applied Physics Letters. 84: 5413-5415. DOI: 10.1063/1.1767599  0.532
2004 Soares GV, Bastos KP, Pezzi RP, Miotti L, Driemeier C, Baumvol IJR, Hinkle C, Lucovsky G. Nitrogen bonding, stability, and transport in AION films on Si Applied Physics Letters. 84: 4992-4994. DOI: 10.1063/1.1763230  0.681
2004 Edge LF, Schlom DG, Brewer RT, Chabal YJ, Williams JR, Chambers SA, Hinkle C, Lucovsky G, Yang Y, Stemmer S, Copel M, Holländer B, Schubert J. Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon Applied Physics Letters. 84: 4629-4631. DOI: 10.1063/1.1759065  0.7
2004 Fulton CC, Lucovsky G, Nemanich RJ. Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100) Applied Physics Letters. 84: 580-582. DOI: 10.1063/1.1639944  0.707
2004 Bastos KP, Pezzi RP, Miotti L, Soares GV, Driemeier C, Morais J, Baumvol IJR, Hinkle C, Lucovsky G. Thermal stability of plasma-nitrided aluminum oxide films on Si Applied Physics Letters. 84: 97-99. DOI: 10.1063/1.1638629  0.693
2004 Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 (ZrO2) layers sandwiched between thicker SiO2 layers Surface Science. 566: 1185-1189. DOI: 10.1016/J.Susc.2004.06.084  0.754
2004 Lucovsky G, Rayner GB, Kang D, Hinkle CL, Hong JG. A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Zr(Hf) silicate alloys Surface Science. 566: 772-776. DOI: 10.1016/J.Susc.2004.06.010  0.799
2004 Lucovsky G, Zhang Y, Whitten JL, Schlom DG, Freeouf JL. Spectroscopic studies of the electrical structure of transition metal and rare earth complex oxides Physica E: Low-Dimensional Systems and Nanostructures. 21: 712-716. DOI: 10.1016/J.Physe.2003.11.111  0.41
2004 Lee YM, Wu Y, Lucovsky G. Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress Microelectronics Reliability. 44: 207-212. DOI: 10.1016/J.Microrel.2003.07.002  0.532
2004 Rayner GB, Kang D, Lucovsky G. Chemical phase separation in Zr silicate alloys: A spectroscopic study distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity Journal of Non-Crystalline Solids. 338: 151-154. DOI: 10.1016/J.Mee.2004.01.008  0.779
2004 Rayner GB, Kang D, Hinkle CL, Hong JG, Lucovsky G. Chemical phase separation in Zr silicate alloys: A spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity Microelectronic Engineering. 72: 304-309. DOI: 10.1016/j.mee.2004.01.008  0.776
2004 Lucovsky G, Zhang Y, Whitten JL, Schlom DG, Freeouf JL. Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex oxides Microelectronic Engineering. 72: 288-293. DOI: 10.1016/J.Mee.2004.01.006  0.411
2004 Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices Microelectronic Engineering. 72: 257-262. DOI: 10.1016/J.Mee.2003.12.047  0.734
2004 Mowrer T, Lucovsky G, Sremaniak LS, Whitten JL. Ab initio theory calculations of the electronic structure of nc-As 2S3 and GeS2: An intrinsic mechanism for reversible photo-darkening Journal of Non-Crystalline Solids. 338: 543-547. DOI: 10.1016/J.Jnoncrysol.2004.03.038  0.313
2004 Lucovsky G, Mowrer T, Sremaniak LS, Whitten JL. Local atomic structure and infrared effective charges in tetrahedrally-bonded glasses from ab initio theory electronic structure calculations Journal of Non-Crystalline Solids. 338: 155-158. DOI: 10.1016/J.Jnoncrysol.2004.02.043  0.363
2004 Bae C, Lucovsky G. Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices Surface Science. 566: 356-360. DOI: 10.1016/J.Apsusc.2004.05.077  0.456
2004 Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 layers sandwiched between thicker SiO2 layers Applied Surface Science. 234: 240-245. DOI: 10.1016/J.Apsusc.2004.05.076  0.753
2004 Lucovsky G, Rayner GB, Kang D, Hinkle CL, Hong JG. A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys Applied Surface Science. 234: 429-433. DOI: 10.1016/j.apsusc.2004.05.075  0.783
2004 Lucovsky G, Paesler MA. Ab initio calculations for photo-darkening and photo-induced structural changes in As2 S3 and GeS2 Physica Status Solidi (C). 1: 1179-1185. DOI: 10.1002/Pssc.200304313  0.396
2004 Lucovsky G, Hong JG, Fulton CC, Zou Y, Nemanich RJ, Ade H, Scholm DG, Freeouf JL. Spectroscopic studies of metal high-k dielectrics: Transition metal oxides and silicates, and complex rare earth/transition metal oxides Physica Status Solidi (B) Basic Research. 241: 2221-2235. DOI: 10.1002/Pssb.200404938  0.77
2003 Rayner GB, Kang D, Lucovsky G. Spectroscopic study of chemical phase separation in zirconium silicate alloys Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 1783. DOI: 10.1116/1.1593646  0.777
2003 Ulrich MD, Hong JG, Rowe JE, Lucovsky G, Chan AS, Madey TE. Soft x-ray photoelectron spectroscopy of (HfO[sub 2])[sub x](SiO[sub 2])[sub 1−x] high-k gate-dielectric structures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 1777. DOI: 10.1116/1.1589518  0.683
2003 Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G. Resonant tunneling in stacked dielectrics: A novel approach for obtaining the electron tunneling mass-conduction band offset energy products for advanced gate dielectrics Extended Abstracts of International Workshop On Gate Insulator, Iwgi 2003. 80-85. DOI: 10.1109/IWGI.2003.159189  0.711
2003 Cook TE, Fulton CC, Mecouch WJ, Davis RF, Lucovsky G, Nemanich RJ. Band offset measurements of the GaN (0001)/HfO 2 interface Journal of Applied Physics. 94: 7155-7158. DOI: 10.1063/1.1625579  0.676
2003 Cook TE, Fulton CC, Mecouch WJ, Davis RF, Lucovsky G, Nemanich RJ. Band offset measurements of the Si3N4/GaN (0001) interface Journal of Applied Physics. 94: 3949-3954. DOI: 10.1063/1.1601314  0.664
2003 Cook TE, Fulton CC, Mecouch WJ, Tracy KM, Davis RF, Hurt EH, Lucovsky G, Nemanich RJ. Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001) Journal of Applied Physics. 93: 3995-4004. DOI: 10.1063/1.1559424  0.689
2003 Hinkle C, Lucovsky G. Remote plasma-assisted nitridation (RPN): Applications to Zr and Hf silicate alloys and Al2O3 Applied Surface Science. 216: 124-132. DOI: 10.1016/S0169-4332(03)00499-9  0.607
2003 Bae C, Rayner GB, Lucovsky G. Device-quality GaN-dielectric interfaces by 300 °C remote plasma processing Applied Surface Science. 216: 119-123. DOI: 10.1016/S0169-4332(03)00497-5  0.785
2003 Lucovsky G, Rayner B, Zhang Y, Appel G, Whitten J. Band offset energies in zirconium silicate Si alloys Applied Surface Science. 216: 215-222. DOI: 10.1016/S0169-4332(03)00429-X  0.493
2003 Bae C, Lucovsky G. Oxide formation and passivation for micro- and nano-electronic devices Applied Surface Science. 212: 644-648. DOI: 10.1016/S0169-4332(03)00139-9  0.584
2003 Sremaniak LS, Whitten JL, Menon M, Lucovsky G. Contributions to the infrared effective charges of oxides and chalcogenides from equilibrium charge and dynamic charge redistribution during normal mode motions Applied Surface Science. 212: 839-843. DOI: 10.1016/S0169-4332(03)00087-4  0.351
2003 Lucovsky G, Rayner GB, Zhang Y, Fulton CC, Nemanich RJ, Appel G, Ade H, Whitten JL. Electronic structure of transition metal high-k dielectrics: Interfacial band offset energies for microelectronic devices Applied Surface Science. 212: 563-569. DOI: 10.1016/S0169-4332(03)00055-2  0.828
2003 Bae C, Lucovsky G. Low temperature semiconductor surface passivation for nanoelectronic device applications Surface Science. 532: 759-763. DOI: 10.1016/S0039-6028(03)00181-X  0.403
2003 Lee YM, Wu Y, Bae C, Hong JG, Lucovsky G. Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress Solid-State Electronics. 47: 71-76. DOI: 10.1016/S0038-1101(02)00257-5  0.746
2003 Lucovsky G. Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects Microelectronics Reliability. 43: 1417-1426. DOI: 10.1016/S0026-2714(03)00253-1  0.372
2003 Lucovsky G, Sremaniak LS, Mowrer T, Whitten JL. A new approach for calculating the electronic structure and vibrational properties of non-crystalline solids: Effective charges for infrared-active normal mode vibrations in oxide and chalcogenide materials Journal of Non-Crystalline Solids. 326: 1-14. DOI: 10.1016/S0022-3093(03)00369-7  0.385
2002 Lucovsky G, Rayner B, Zhang Y, Appel G, Whitten J. Band Offset Energies in Zirconium Silicate Alloys The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2002.C-8-1  0.331
2002 Lee Y, Wu Y, Hong JG, Lucovsky G. Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress Mrs Proceedings. 716. DOI: 10.1557/Proc-716-B2.9  0.664
2002 Misra V, Lucovsky G, Parsons G. Issues in High-ĸ Gate Stack Interfaces Mrs Bulletin. 27: 212-216. DOI: 10.1557/Mrs2002.73  0.537
2002 Osburn CM, Kim I, Han SK, De I, Yee KF, Gannavaram S, Lee SJ, Lee C, Luo ZJ, Zhu W, Hauser JR, Kwong D, Lucovsky G, Ma TP, Ozturk MC. Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? Ibm Journal of Research and Development. 46: 299-315. DOI: 10.1147/Rd.462.0299  0.355
2002 Khandelwal A, Niimi H, Lucovsky G, Lamb HH. Low-temperature Ar/N2 remote plasma nitridation of SiO2 thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1989-1996. DOI: 10.1116/1.1513635  0.344
2002 Rayner GB, Kang D, Zhang Y, Lucovsky G. Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1748-1758. DOI: 10.1116/1.1493788  0.804
2002 Lucovsky G, Zhang Y, Rayner GB, Appel G, Ade H, Whitten JL. Electronic structure of high-k transition metal oxides and their silicate and aluminate alloys Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1739-1747. DOI: 10.1116/1.1493787  0.796
2002 Ulrich MD, Johnson RS, Hong JG, Rowe JE, Lucovsky G, Quinton JS, Madey TE. Interface electronic structure of Ta2O5-Al2O3 alloys for Si-field-effect transistor gate dielectric applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1732-1738. DOI: 10.1116/1.1493786  0.726
2002 Fulton CC, Lucovsky G, Nemanich RJ. Electronic states at the interface of Ti-Si oxide on Si(100) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1726-1731. DOI: 10.1116/1.1493785  0.715
2002 Wang JFT, Powell GD, Johnson RS, Lucovsky G, Aspnes DE. Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1699-1705. DOI: 10.1116/1.1493783  0.334
2002 Whitten JL, Zhang Y, Menon M, Lucovsky G. Electronic structure of SiO2: Charge redistribution contributions to the dynamic dipoles/effective charges of the infrared active normal modes Journal of Vacuum Science & Technology B. 20: 1710-1719. DOI: 10.1116/1.1490382  0.356
2002 Johnson RS, Hong JG, Hinkle C, Lucovsky G. Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1126-1131. DOI: 10.1116/1.1481872  0.776
2002 Felix JA, Fleetwood DM, Schrimpf RD, Hong JG, Lucovsky G, Schwank JR, Shaneyfelt MR. Total-dose radiation response of hafnium-silicate capacitors Ieee Transactions On Nuclear Science. 49: 3191-3196. DOI: 10.1109/Tns.2002.805392  0.628
2002 Choi BK, Fleetwood DM, Schrimpf RD, Massengill LW, Galloway KF, Shaneyfelt MR, Meisenheimer TL, Dodd PE, Schwank JR, Lee YM, John RS, Lucovsky G. Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation Ieee Transactions On Nuclear Science. 49: 3045-3050. DOI: 10.1109/Tns.2002.805389  0.361
2002 Fan YY, Nieh RE, Lee JC, Lucovsky G, Brown GA, Register LF, Banerjee SK. Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor Ieee Transactions On Electron Devices. 49: 1969-1978. DOI: 10.1109/Ted.2002.804713  0.39
2002 Glinka YD, Wang W, Singh SK, Marka Z, Rashkeev SN, Shirokaya Y, Albridge R, Pantelides ST, Tolk NH, Lucovsky G. Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation Physical Review B. 65: 193103. DOI: 10.1103/Physrevb.65.193103  0.466
2002 Lim S, Kriventsov S, Jackson TN, Haeni JH, Schlom DG, Balbashov AM, Uecker R, Reiche P, Freeouf JL, Lucovsky G. Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry Journal of Applied Physics. 91: 4500-4505. DOI: 10.1063/1.1456246  0.384
2002 Niimi H, Khandelwal A, Lamb HH, Lucovsky G. Reaction pathways in remote plasma nitridation of ultrathin SiO 2 films Journal of Applied Physics. 91: 48-55. DOI: 10.1063/1.1419208  0.367
2002 Choi B, Fleetwood D, Massengill L, Schrimpf R, Galloway K, Shaneyfelt M, Meisenheimer T, Dodd P, Schwank J, Lee Y, Johnson R, Lucovsky G. Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation Electronics Letters. 38: 157. DOI: 10.1049/El:20020119  0.315
2002 Johnson RS, Lucovsky G, Hong JG. Fixed charge and interface traps at heterovalent interfaces between Si(1 0 0) and non-crystalline Al2O3-Ta2O5 alloys Applied Surface Science. 190: 43-47. DOI: 10.1016/S0169-4332(01)00889-3  0.616
2002 Lucovsky G, Whitten JL, Zhang Y. A molecular orbital model for the electronic structure of transition metal atoms in silcate and aluminate alloys Applied Surface Science. 190: 48-55. DOI: 10.1016/S0169-4332(01)00835-2  0.403
2002 Lucovsky G, Whitten JL, Zhang Y. A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys Solid-State Electronics. 46: 1687-1697. DOI: 10.1016/S0038-1101(02)00160-0  0.409
2002 Johnson RS, Hong JG, Hinkle C, Lucovsky G. Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices Solid-State Electronics. 46: 1799-1805. DOI: 10.1016/S0038-1101(02)00152-1  0.789
2002 Lucovsky G. Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices Journal of Non-Crystalline Solids. 303: 40-49. DOI: 10.1016/S0022-3093(02)00962-6  0.429
2002 Lucovsky G. Amorphous morphology, thermal stability and electronic structure of non-crystalline transition-metal elemental and binary oxides, and chalcogenides Journal of Non-Crystalline Solids. 299302: 231-237. DOI: 10.1016/S0022-3093(01)01162-0  0.42
2002 Boehme C, Lucovsky G. Origins of silicon solar cell passivation by SiNx:H anneal Journal of Non-Crystalline Solids. 299: 1157-1161. DOI: 10.1016/S0022-3093(01)01135-8  0.404
2001 Hurt E, Cook TE, Tracy K, Davis R, Lucovsky G, Nemanich R. Measurements of the Band Offset of SiO2 on Clean GaN Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I9.10.1  0.385
2001 Boehme C, Lucovsky G. Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 2622-2628. DOI: 10.1116/1.1398538  0.376
2001 Johnson RS, Hong JG, Lucovsky G. Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)x(Al2O3)1−x alloys Journal of Vacuum Science & Technology B. 19: 1606-1610. DOI: 10.1116/1.1388606  0.69
2001 Lucovsky G. Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 19: 1553-1561. DOI: 10.1116/1.1379317  0.442
2001 Johnson RS, Lucovsky G, Baumvol I. Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 1353-1360. DOI: 10.1116/1.1379316  0.414
2001 Massengill L, Choi B, Fleetwood D, Schrimpf R, Galloway K, Shaneyfelt M, Meisenheimer T, Dodd P, Schwank J, Lee Y, Johnson R, Lucovsky G. Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics Ieee Transactions On Nuclear Science. 48: 1904-1912. DOI: 10.1109/23.983149  0.343
2001 Lucovsky G, Rayner GB, Kang D, Appel G, Johnson RS, Zhang Y, Sayers DE, Ade H, Whitten JL. Electronic structure of noncrystalline transition metal silicate and aluminate alloys Applied Physics Letters. 79: 1775-1777. DOI: 10.1063/1.1404997  0.818
2001 Lazar HR, Misra V, Johnson RS, Lucovsky G. Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal–oxide–semiconductor devices Applied Physics Letters. 79: 973-975. DOI: 10.1063/1.1392973  0.432
2001 Johnson RS, Lucovsky G, Goo Hong J. Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3–Ta2O5 alloys Microelectronic Engineering. 59: 385-391. DOI: 10.1016/S0169-4332(01)00889-3  0.468
2001 Lucovsky G, Whitten JL, Zhang Y. A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys Microelectronic Engineering. 59: 329-334. DOI: 10.1016/S0167-9317(01)00653-0  0.437
2001 Lucovsky G, Rayner GB, Johnson RS. Chemical and physical limits on the performance of metal silicate high-k gate dielectrics Microelectronics and Reliability. 41: 937-945. DOI: 10.1016/S0026-2714(01)00046-4  0.793
2000 Lucovsky G. Intrinsic Limitations on Ultimate Device Performance and Reliability from Transition Regions at i) Si-Dielectric Interfaces and ii) Internal Interfaces The Japan Society of Applied Physics. 2000: 240-241. DOI: 10.7567/Ssdm.2000.B-6-1  0.373
2000 Lucovsky G, Niimi H, Johnson R, Hong JG, Therrien R, Rayner B. Chemical Bonding at Interfaces between Si (100) and High-K Dielectrics: Competing Effects of i) Process Gas-Substrate and ii) Film Deposition Reactions The Japan Society of Applied Physics. 2000: 232-233. DOI: 10.7567/Ssdm.2000.B-5-4  0.668
2000 Rayner G, Therrien R, Lucovsky G. The Structure of Plasma-Deposited and Annealed Pseudo-Binary ZrO2-SiO2 Alloys Mrs Proceedings. 611. DOI: 10.1557/PROC-611-C1.3.1  0.353
2000 Boehme C, Lucovsky G. Diffusion of Hydrogen and Deuterium in Stack Systems of SixNyHz/SixNyDz and Crystalline Si Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A26.7  0.457
2000 Lucovsky G, Yang H, Niimi H, Keister JW, Rowe JE, Thorpe MF, Phillips JC. Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 1742. DOI: 10.1116/1.591464  0.514
2000 Brillson LJ, Young AP, White BD, Schäfer J, Niimi H, Lee YM, Lucovsky G. Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO[sub 2]/Si interfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 1737. DOI: 10.1116/1.591463  0.475
2000 Johnson RS, Niimi H, Lucovsky G. New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 18: 1230-1233. DOI: 10.1116/1.582331  0.427
2000 Lucovsky G, Wu Y, Niimi H, Yang H, Keister J, Rowe JE. Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 18: 1163-1168. DOI: 10.1116/1.582318  0.419
2000 Lucovsky G, Yang H, Niimi H, Thorpe MF, Phillips JC. Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor–dielectric interfaces and (ii) internal interfaces in stacked dielectrics Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 2179. DOI: 10.1116/1.1306307  0.457
2000 Wu Y, Lee Y, Lucovsky G. 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process Ieee Electron Device Letters. 21: 116-118. DOI: 10.1109/55.823574  0.391
2000 Yang H, Numi H, Keister JW, Lucovsky G, Rowe JE. The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices Ieee Electron Device Letters. 21: 76-78. DOI: 10.1109/55.821673  0.436
2000 White BD, Brillson LJ, Lee SC, Fleetwood DM, Schrimpf RD, Pantelides ST, Lee Y-, Lucovsky G. Low energy electron-excited nanoscale luminescence: a tool to detect trap activation by ionizing radiation Ieee Transactions On Nuclear Science. 47: 2276-2280. DOI: 10.1109/23.903765  0.448
2000 Wu Y, Lucovsky G, Lee Y. The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing Ieee Transactions On Electron Devices. 47: 1361-1369. DOI: 10.1109/16.848278  0.457
2000 Boehme C, Lucovsky G. H loss mechanism during anneal of silicon nitride: Chemical dissociation Journal of Applied Physics. 88: 6055-6059. DOI: 10.1063/1.1321730  0.415
2000 Lucovsky G, Rayner GB. Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys Applied Physics Letters. 77: 2912-2914. DOI: 10.1063/1.1320860  0.78
2000 Therrien R, Lucovsky G, Davis R. Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN faces Applied Surface Science. 166: 513-519. DOI: 10.1016/S0169-4332(00)00485-2  0.33
2000 Lucovsky G, Phillips JC. Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces Applied Surface Science. 166: 497-503. DOI: 10.1016/S0169-4332(00)00482-7  0.456
2000 Niimi H, Yang H, Lucovsky G, Keister JW, Rowe JE. Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si–SiO2 interfaces Applied Surface Science. 166: 485-491. DOI: 10.1016/S0169-4332(00)00480-3  0.382
2000 Lucovsky G, Niimi H, Wu Y, Yang H. Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces Applied Surface Science. 159: 50-61. DOI: 10.1016/S0169-4332(00)00071-4  0.464
2000 Lucovsky G, Yang H, Wu Y, Niimi H. Plasma processed ultra-thin SiO2 interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics Thin Solid Films. 374: 217-227. DOI: 10.1016/S0040-6090(00)01153-6  0.494
2000 Wu Y, Xiang Q, Yang JY, Lucovsky G, Lin M. Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (<2.0 nm) single layer and dual layer gate oxides Microelectronics Reliability. 40: 1987-1995. DOI: 10.1016/S0026-2714(00)00103-7  0.345
2000 Lucovsky G, Phillips JC. Application of constraint theory to Si-dielectric interfaces in a-Si:H and poly-Si thin film transistors (TFTs) Journal of Non-Crystalline Solids. 266: 1335-1339. DOI: 10.1016/S0022-3093(99)00947-3  0.449
2000 Wolfe DM, Lucovsky G. Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing Journal of Non-Crystalline Solids. 1009-1014. DOI: 10.1016/S0022-3093(99)00894-7  0.449
1999 Lucovsky G, Wu Y, Lee Y, Yang H, Niimi H. Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics Mrs Proceedings. 592. DOI: 10.1557/Proc-592-317  0.508
1999 Yang H, Niimi H, Lucovsky G. Improved Performance and Reliability in Aggressively-Scaled NMOS and PMOS FETs: i) Monolayer Interface Nitridation, and ii) Replacement of Stacked Oxide/Nitride Dielectrics With Optimized Oxide/Oxynitride Stacks Mrs Proceedings. 592. DOI: 10.1557/PROC-592-177  0.346
1999 Brillson L, Young A, Schäfer J, Niimi H, Lucovsky G. Ultrathin Silicon Oxide and Nitride – Silicon Interface States Mrs Proceedings. 567. DOI: 10.1557/PROC-567-549  0.412
1999 Wolfe D, Flock K, Therrien R, Johnson R, Rayner B, Günther L, Brown N, Claflin B, Lucovsky G. Remote Plasma Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO2)1-(SiO2)1−x (x:≤0.5), Thin Films for Advanced High-K Gate Dielectrics Mrs Proceedings. 567. DOI: 10.1557/PROC-567-343  0.443
1999 Yang H, Niimi H, Wu Y, Lucovsky G. The Effects of Interfacial Suboxide Transition Regions on Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics Mrs Proceedings. 567. DOI: 10.1557/Proc-567-241  0.41
1999 Lucovsky G, Phillips J. Bonding Constraints at Interfaces Between Crystalline Si and Stacked Gate Dielectrics Mrs Proceedings. 567. DOI: 10.1557/Proc-567-201  0.348
1999 Wu Y, Lucovsky G. Aggressively Scaled P-Channel Mosfets With Stacked Nitride-Oxide-Nitride, N/O/N, Gate Dielectrics Mrs Proceedings. 567. DOI: 10.1557/Proc-567-101  0.429
1999 Lucovsky G, Phillips J. Why SiNx:H is the Preferred Gate Dielectric for Amorphous Si Thin Film Transistors (TFTS) and SiO2 is the Preferred Gate Dielectric for Polycrystalline Si TFTs Mrs Proceedings. 558. DOI: 10.1557/Proc-558-135  0.455
1999 Lucovsky G. Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Ibm Journal of Research and Development. 43: 301-326. DOI: 10.1147/Rd.433.0301  0.463
1999 Niimi H, Lucovsky G. Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked “N–O–N” gate dielectrics Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 2610. DOI: 10.1116/1.591034  0.428
1999 Misra V, Lazar H, Wang Z, Wu Y, Niimi H, Lucovsky G, Wortman JJ, Hauser JR. Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1836. DOI: 10.1116/1.590835  0.46
1999 Keister JW, Rowe JE, Kolodziej JJ, Niimi H, Madey TE, Lucovsky G. Band offsets for ultrathin SiO[sub 2] and Si[sub 3]N[sub 4] films on Si(111) and Si(100) from photoemission spectroscopy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1831. DOI: 10.1116/1.590834  0.483
1999 Wu Y, Niimi H, Yang H, Lucovsky G, Fair RB. Suppression of boron transport out of p[sup +] polycrystalline silicon at polycrystalline silicon dielectric interfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1813. DOI: 10.1116/1.590832  0.403
1999 Lucovsky G, Wu Y, Niimi H, Misra V, Phillips JC. Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1806. DOI: 10.1116/1.590831  0.434
1999 Niimi H, Lucovsky G. Monolayer-level controlled incorporation of nitrogen at Si–SiO2 interfaces using remote plasma processing Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 17: 3185-3196. DOI: 10.1116/1.582041  0.437
1999 Lucovsky G. Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide–nitride gate dielectrics with nitrided crystalline silicon–dielectric interfaces for application in advanced complementary metal–oxide–semiconductor devices Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 17: 1340-1351. DOI: 10.1116/1.581818  0.433
1999 Young AP, Bandhu R, Schäfer J, Niimi H, Lucovsky G. Cathodoluminescence spectroscopy of nitrided SiO2–Si interfaces Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 17: 1258-1262. DOI: 10.1116/1.581806  0.481
1999 Keister JW, Rowe JE, Kolodziej JJ, Niimi H, Tao H, Madey TE, Lucovsky G. Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 17: 1250-1257. DOI: 10.1116/1.581805  0.493
1999 Wolfe DM, Hinds BJ, Wang F, Lucovsky G, Ward BL, Xu M, Nemanlch RJ, Maher DM. Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 2170-2177. DOI: 10.1116/1.581745  0.688
1999 Wu Y, Xiang Q, Bang D, Lucovsky G, Lin M. Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides Ieee Electron Device Letters. 20: 262-264. DOI: 10.1109/55.767092  0.324
1999 Lucovsky G, Wu Y, Niimi H, Misra V, Phillips JC. Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics Applied Physics Letters. 74: 2005-2007. DOI: 10.1063/1.123728  0.46
1999 Therrien R, Lucovsky G, Davis RF. Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces Physica Status Solidi (a) Applied Research. 176: 793-796. DOI: 10.1016/S0169-4332(00)00485-2  0.461
1999 Lucovsky G, Phillips JC. The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devices Microelectronic Engineering. 48: 291-294. DOI: 10.1016/S0167-9317(99)00391-3  0.46
1999 Wu Y, Lucovsky G. Improvement of gate dielectric reliability for p+poly MOS devices using remote PECVD top nitride deposition on ultra-thin (2.4–6 nm) gate oxides Microelectronics Reliability. 39: 365-372. DOI: 10.1016/S0026-2714(98)00244-3  0.449
1999 Lucovsky G. Silicon oxide/silicon nitride dual-layer films: a stacked gate dielectric for the 21st century Journal of Non-Crystalline Solids. 254: 26-37. DOI: 10.1016/S0022-3093(99)00432-9  0.478
1999 Yang H, Lucovsky G. Stability of Si–O–F low-K dielectrics: attack by water molecules as function of near-neighbor Si–F bonding arrangements Journal of Non-Crystalline Solids. 254: 128-133. DOI: 10.1016/S0022-3093(99)00387-7  0.363
1998 Schafer J, Young AP, Niimi LJBH, Lucovsky G. Characterization of the Interface between Plasma-Oxidized SiO2 and Crystalline Silicon by Cathodoluminescence Spectroscopy (CLS) The Japan Society of Applied Physics. 1998: 134-135. DOI: 10.7567/Ssdm.1998.A-5-6  0.408
1998 Niimi H, Lucovsky G, Wu Y. Differences between the Electrical Properties of Nitrided Si-SiO2 Interfaces Formed by (a) Post-Oxidation, Remote Plasma-Assisted Nitridation and (b) Remote Plasma-Assisted Deposition The Japan Society of Applied Physics. 1998: 114-115. DOI: 10.7567/Ssdm.1998.A-4-2  0.399
1998 Wu Y, Lucovsky G. Ultrathin Nitride/Oxide (N/O) Gate Dielectrics for p+-poly Gated PMOSFETs Prepared by a Combined Remote Plasma Enhanced CVD/Thermal Oxidation Process The Japan Society of Applied Physics. 1998: 106-107. DOI: 10.7567/Ssdm.1998.A-3-2  0.348
1998 Lucovsky G, Wolfe D, Hinds B. Production of Silicon Nanocrystals by Thermal Annealing of Silicon-Oxygen and Silicon-Oxygen-Carbon Alloys: Model Systems for Chemical and Structural Relaxation at Si-SiO2 and Sic-SiO2 Interfaces Mrs Proceedings. 536. DOI: 10.1557/Proc-536-111  0.495
1998 Claflin B, Binger M, Lucovsky G. Chemical Stability of Advanced Metal Gate and Ultra-thin Gate Dielectric Interface During Rapid Thermal Annealing Mrs Proceedings. 525. DOI: 10.1557/PROC-525-219  0.363
1998 Lucovsky G, Parker CR, Wu Y, HAUSER JR. Defect Reduction in Remote Plasma Deposited Silicon Nitride by Post-Deposition Rapid Thermal Annealing Mrs Proceedings. 525. DOI: 10.1557/PROC-525-187  0.331
1998 Schafer J, Young AP, Brillson LJ, Niimi H, Lucovsky G. Cathodoluminescence Studies of Si-Sio2 Interfaces Prepared by Plasma-Assisted Oxidation and Subjected to Post-Oxidation Rapid Thermal Annealing Mrs Proceedings. 525. DOI: 10.1557/PROC-525-151  0.414
1998 Yang H, Lucovsky G. A Unified Chemical Bonding Model for Defect Generation in a-SiH: Photo-Induced Defects in Photovoltaic Devices and Current-Induced Defects in TFTs Japanese Journal of Applied Physics. 37: 1082-1090. DOI: 10.1143/Jjap.37.1082  0.419
1998 Lucovsky G, Niimi H, Koh K, Green ML. Monolayer Nitrogen Atom Incorporation at Buried Si-SiO2 Interfaces: Preparation by Remote Plasma Oxidation/Nitridation and Characterization by On-Line Auger Electron Spectroscopy Surface Review and Letters. 5: 167-173. DOI: 10.1142/S0218625X98000323  0.434
1998 Lucovsky G, Yang H, Massoud HZ. Heterointerface dipoles: Applications to (a) Si–SiO2, (b) nitrided Si–N–SiO2, and (c) SiC–SiO2 interfaces Journal of Vacuum Science & Technology B. 16: 2191-2198. DOI: 10.1116/1.590147  0.403
1998 Claflin B, Binger M, Lucovsky G. Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 1757-1761. DOI: 10.1116/1.581297  0.455
1998 Lucovsky G, Niimi H, Wu Y, Parker CR, Hauser JR. Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1721-1729. DOI: 10.1116/1.581291  0.458
1998 Yang H, Lucovsky G. Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements Journal of Vacuum Science and Technology. 16: 1525-1528. DOI: 10.1116/1.581181  0.391
1998 Lucovsky G. Monolayer incorporation of nitrogen at Si–SiO2 interfaces: Interface characterization and electrical properties Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 356-364. DOI: 10.1116/1.581005  0.432
1998 Wolfe DM, Wang F, Habermehl S, Lucovsky G. Erratum: “Low-temperature (<450 °C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering” [J. Vac. Sci. Technol. A 15, 1035 (1997)] Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 16: 207-207. DOI: 10.1116/1.580973  0.306
1998 Wu Y, Lucovsky G. Ultrathin nitride/oxide (N/O) gate dielectrics for p/sup +/-polysilicon gated PMOSFETs prepared by a combined remote plasma enhanced CVD/thermal oxidation process Ieee Electron Device Letters. 19: 367-369. DOI: 10.1109/55.720188  0.38
1998 Parker CG, Lucovsky G, Hauser JR. Ultrathin Oxide-Nitride Gate Dielectric MOSFET's Ieee Electron Device Letters. 19: 106-108. DOI: 10.1109/55.663529  0.367
1998 Vogel EM, Ahmed KZ, Hornung B, Henson WK, McLarty PK, Lucovsky G, Hauser JR, Wortman JJ. Modeled tunnel currents for high dielectric constant dielectrics Ieee Transactions On Electron Devices. 45: 1350-1355. DOI: 10.1109/16.678572  0.322
1998 Wang W, Lüpke G, Ventra MD, Pantelides ST, Gilligan JM, Tolk NH, Kizilyalli IC, Roy PK, Margaritondo G, Lucovsky G. Coupled Electron-Hole Dynamics at theSi/SiO2Interface Physical Review Letters. 81: 4224-4227. DOI: 10.1103/Physrevlett.81.4224  0.384
1998 Yang HY, Niimi H, Lucovsky G. Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices Journal of Applied Physics. 83: 2327-2337. DOI: 10.1063/1.366976  0.364
1998 Schäfer J, Young AP, Brillson LJ, Niimi H, Lucovsky G. Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon Applied Physics Letters. 73: 791-793. DOI: 10.1063/1.122003  0.525
1998 Koh K, Niimi H, Lucovsky G. Plasma-engineered Si−SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O Surface and Coatings Technology. 98: 1524-1528. DOI: 10.1016/S0257-8972(97)00392-7  0.401
1998 Niimi H, Lucovsky G. Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation Surface and Coatings Technology. 98: 1529-1533. DOI: 10.1016/S0257-8972(97)00389-7  0.419
1998 Lucovsky G, Phillips JC. Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs) Journal of Non-Crystalline Solids. 227: 1221-1225. DOI: 10.1016/S0022-3093(98)00209-9  0.488
1998 Lucovsky G, Yang H. Reaction pathways for intrinsic and extrinsic defect metastability in light-soaked hydrogenated amorphous silicon—the Staebler–Wronski effect Journal of Non-Crystalline Solids. 227: 281-286. DOI: 10.1016/S0022-3093(98)00196-3  0.367
1998 Lucovsky G. Atomic structure and thermal stability of silicon suboxides in bulk thin films and in transition regions at Si–SiO2 interfaces Journal of Non-Crystalline Solids. 227: 1-14. DOI: 10.1016/S0022-3093(98)00014-3  0.488
1997 Yang H, Lucovsky G. A Unified Model for Charge Defect Generation in a-SiH : Photo-Induced Defects in Photovoltaic (PV) Devices and Current Induced Defects in Thin Film Transistors (TFTs) The Japan Society of Applied Physics. 1997: 544-545. DOI: 10.7567/Ssdm.1997.D-13-1  0.337
1997 Wang F, Hinds BJ, Wolfe DW, Lucovsky G. Photoluminescence Stability Of Silicon Suboxide Thin Films Mrs Proceedings. 486. DOI: 10.1557/PROC-486-349  0.365
1997 Wolfe DM, Wang F, Hinds BJ, Lucovsky G. Optical Characterization Of Silicon Oxycarbide Thin Films Mrs Proceedings. 483. DOI: 10.1557/PROC-483-203  0.327
1997 Hinds BJ, Aspnes DE, Lucovsky G. Low pH Chemical Etch Route for Smooth H-Terminated Si(100) And Study Of Subsequent Chemical Stability Mrs Proceedings. 477. DOI: 10.1557/Proc-477-191  0.422
1997 Wolfe DM, Wang F, Lucovsky G. Low-Temperature (450 °C) Poly-Si Thin Film Deposition on SiO2 and Glass using a Microcrystalline-Si Seed Layer Mrs Proceedings. 472. DOI: 10.1557/PROC-472-427  0.329
1997 Wang F, Wolfe D, Lucovsky G. Recrystallization of Amorphous Silicon Deposited on Ultra Thin Microcrystalline Silicon Layers Mrs Proceedings. 467. DOI: 10.1557/PROC-467-433  0.35
1997 Lucovsky G, Yang H. Local Atomic Bonding in Fluorinated Silicon Oxides: Bond-Ionicity-Controlled Contributions of Infrared-Active Vibrations to the Static Dielectric Constant Japanese Journal of Applied Physics. 36: 1368-1373. DOI: 10.1143/Jjap.36.1368  0.439
1997 Yang H-, Lucovsky G. LOCAL DIPOLE FIELD CONTRIBUTIONS TO BOND-STRETCHING SILICON–HYDROGEN VIBRATIONAL MODES ON FLAT AND VICINAL Si(111) SURFACES Surface Review and Letters. 4: 891-896. DOI: 10.1142/S0218625X97000985  0.361
1997 Lucovsky G, Yang H. Fluorine atom induced decreases to the contribution of infrared vibrations to the static dielectric constant of Si–O–F alloy films Journal of Vacuum Science and Technology. 15: 836-843. DOI: 10.1116/1.580717  0.453
1997 Niimi H, Koh K, Lucovsky G. Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 127: 364-368. DOI: 10.1016/S0168-583X(96)00958-5  0.343
1997 Lucovsky G, Yang HY, Jing Z, Whitten JL. The Role of Hydrogen Atoms (H Atoms) in Metastable Defect Formation at Si–SiO2 Interfaces and in Hydrogenated Amorphous Si (a‐Si:H) Physica Status Solidi (a). 159: 5-15. DOI: 10.1002/1521-396X(199701)159:1<5::Aid-Pssa5>3.0.Co;2-L  0.396
1997 Yang HY, Lucovsky G. Local Field Contributions to the Bond‐Stretching Frequencies of Si–H and Si–H2 Groups on Singular and Vicinal Si(111) Physica Status Solidi (a). 159: 17-24. DOI: 10.1002/1521-396X(199701)159:1<17::Aid-Pssa17>3.0.Co;2-2  0.31
1996 Lucovsky G, Yang H. Local Atomic Bonding in Fluorinated Silicon Oxides : Static Dielectric Constant and Chemical Stability The Japan Society of Applied Physics. 1996: 356-358. DOI: 10.7567/Ssdm.1996.Pd-1-6  0.396
1996 Hinds BJ, Banerjee A, Johnson RS, Lucovsky G. Preparation and Characterization of Silicon Nanocrystals in a SiO2 Matrix and Study of Suboxide Stability Mrs Proceedings. 452. DOI: 10.1557/PROC-452-207  0.399
1996 Lucovsky G. Nitrided Silicon Oxide Gate Dielectrics for Submicron Device Technology Mrs Proceedings. 446. DOI: 10.1557/PROC-446-67  0.303
1996 Koh K, Niimi H, Lucovsky G. Reaction Pathways for Nitrogen Incorporation at Si-SiO2 Interfaces Mrs Proceedings. 446. DOI: 10.1557/Proc-446-267  0.412
1996 Niimi H, Koh K, Lucovsky G. Controlled Incorporation of Nitrogen at The Top Surface of Silicon Oxide Gate Dielectrics Mrs Proceedings. 446. DOI: 10.1557/PROC-446-103  0.36
1996 Wolfe D, Wang F, Lucovsky G. Integrated Two-Stage Processing of Microcrystalline Silicon Thin Films on SiO2 and Glass Mrs Proceedings. 429. DOI: 10.1557/PROC-429-361  0.345
1996 Lucovsky G, Niimi H, Koh K. Bonded-H in Gate Dielectrics Deposited by Plasma Assisted Chemical Vapor Deposition and Subjected to Rapid Thermal Annealing Mrs Proceedings. 429. DOI: 10.1557/PROC-429-233  0.333
1996 Banerjee A, Lucovsky G. Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD Mrs Proceedings. 420. DOI: 10.1557/PROC-420-405  0.403
1996 Lucovsky G, Lee DR, Hattangady SV, Niimi H, Gandhi S, Parker C, Jing Z, Whitten JL, Hauser JR. Local atomic structure and electrical properties of nitrided Si-SiO2 interfaces produced by low-temperature plasma processing and rapid thermal annealing, and explained by ab-initio quantum chemistry calculations Applied Surface Science. 104: 335-341. DOI: 10.1016/S0169-4332(96)00167-5  0.354
1996 Cho SM, Christensen C, Lucovsky G, Maher DM. Deposition of microcrystalline hydrogenated silicon,germanium alloy (μc-SixGe1-x:H) films by reactive magnetron sputtering (RMS) Journal of Non-Crystalline Solids. 198: 587-591. DOI: 10.1016/0022-3093(95)00768-7  0.392
1996 Lucovsky G, Jing Z. Defect metastability associated with oxygen and nitrogen impurity atoms in hydrogenated amorphous silicon films Journal of Non-Crystalline Solids. 198: 342-346. DOI: 10.1016/0022-3093(95)00700-8  0.33
1996 Lucovsky G. Preparation of device-quality SiO2 thin films by remote plasma-enhanced chemical vapour deposition (PECVD): Applications in metal-oxide-semiconductor (MOS) devices Advanced Materials For Optics and Electronics. 6: 55-72. DOI: 10.1002/(Sici)1099-0712(199603)6:2<55::Aid-Amo226>3.0.Co;2-J  0.471
1995 Meyer C, Lüpke G, Emmerichs U, Wolter F, Kurz H, Bjorkman CH, Lucovsky G. Electronic transitions at Si(111)/SiO2 and Si(111)/Si3N4 interfaces studied by optical second-harmonic spectroscopy. Physical Review Letters. 74: 3001-3004. PMID 10058078 DOI: 10.1103/PhysRevLett.74.3001  0.301
1995 Lucovsky G, Lee DR, Hattangady SV, Niimi H, Parker C, Hauser JR. Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures: Applications to MOS Devices The Japan Society of Applied Physics. 1995: 34-36. DOI: 10.7567/Ssdm.1995.S-I-2-4  0.322
1995 Lucovsky G, Lee DR, Jing Z, Whitten JL, Parker C, Hauser JR. Incorporation of Nitrogen Atoms at Si/SiO2 Interfaces of Field Effect Transistors (FETs) to Improve Device Reliability Mrs Proceedings. 405. DOI: 10.1557/PROC-405-321  0.305
1995 Cho SM, Christensen K, Wolfe D, Ying H, Lee DR, Lucovsky G, Maher DM. Substrate Surface Dependence of the Microstructure of μc-Si,Ge:H Deposited by Reactive Magnetron Sputtering (RMS) Mrs Proceedings. 405. DOI: 10.1557/PROC-405-241  0.373
1995 Cho SM, Wolfe D, Christensen K, Lucovsky G, Maher DM. Electric and Optical Properties of μc-Si,Ge:H Alloys Deposited by Reactive Magnetron Sputtering (RMS) Mrs Proceedings. 403. DOI: 10.1557/PROC-403-471  0.359
1995 Santos-Filho P, Stevens G, Lu Z, Koh K, Lucovsky G. Hydrogen Release and Si-N Bond-Healing Infrared Study of Rapid Thermal Annealed Amorphous Silicon Nitride Thin Films Mrs Proceedings. 398. DOI: 10.1557/PROC-398-345  0.317
1995 Hattangady SV, Niimi H, Gandhi S, Lucovsky G. Integrated Processing of Silicon Oxynitride Alloy Dielectrics by Plasma-Assisted Oxidation, Chemical Vapor Deposition, and On-Line Rapid Thermal Annealing Mrs Proceedings. 387. DOI: 10.1557/PROC-387-213  0.393
1995 Lee DR, Parker CG, Hauser JR, Lucovsky G. Controlled Nitrogen-Atom Incorporation At Si-SiO2 Interfaces in Mis Devices Mrs Proceedings. 386. DOI: 10.1557/Proc-386-243  0.462
1995 Jing Z, Lucovsky G, Whitten JL. Metastable Defect at Si-SiO2 Interfaces Mrs Proceedings. 378. DOI: 10.1557/PROC-378-851  0.319
1995 Lucovsky G, Lee DR, Hattangady SV, Niimi H, Jing Z, Parker C, Hauser JR. Monolayer nitrogen-atom distributions in ultrathin gate dielectrics by low-temperature low-thermal-budget processing Japanese Journal of Applied Physics. 34: 6827-6837. DOI: 10.1143/Jjap.34.6827  0.416
1995 Lee DR, Lucovsky G, Denker MS, Magee C. Nitrogen‐atom incorporation at Si–SiO2 interfaces by a low‐temperature (300 °C), pre‐deposition, remote‐plasma oxidation using N2O Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 13: 1671-1675. DOI: 10.1116/1.579749  0.433
1995 Lucovsky G, Jing Z, Lu Z, Lee D, Whitten J. Properties of bonded hydrogen in hydrogenated amorphous silicon and other hydrogenated amorphous silicon alloys Journal of Non-Crystalline Solids. 182: 90-102. DOI: 10.1016/0022-3093(94)00578-8  0.311
1994 Cho S, Wolfe D, He S, Christensen K, Maher D, Lucovsky G. Deposition of Microcrystalline Si,Ge (µc-Si,Ge) Alloys by Reactive Magnetron Sputtering Mrs Proceedings. 358. DOI: 10.1557/PROC-358-781  0.368
1994 He SS, Lucovsky G. A Low Temperature Plasma-Assisted Deposition Process for Microcrystalline Thin Film Transistors, TFTS Mrs Proceedings. 345. DOI: 10.1557/PROC-345-53  0.33
1994 Ma Y, Hattangady S, Yasuda T, Niimi H, Gandhi S, Lucovsky G. Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing Mrs Proceedings. 342. DOI: 10.1557/PROC-342-169  0.342
1994 He S, Lucovsky G. High Performance A-Si:H Thin Film Transistors, TFTs: The Importance of Nitride Dielectrics with no Detectable Si-Si Bonding Mrs Proceedings. 336. DOI: 10.1557/PROC-336-787  0.325
1994 Williams M, Cho S, He S, Lucovsky G. Minority Carrier Diffusion Lengths And Photoconductivity In a-Si,N:H Deposited By Remote Pecvd Mrs Proceedings. 336. DOI: 10.1557/PROC-336-529  0.32
1994 Lucovsky G, Ma Y, Hattangady SV, Lee DR, Lu Z, Misra V, Wortman JJ, Jing Z, Whitten JL. Integration of Plasma-Assisted and Rapid Thermal Processing for Low-Thermal Budget Preparation of Ultra-Thin Dielectrics for Stacked-Gate Device Structures Japanese Journal of Applied Physics. 33: 7061-7070. DOI: 10.1143/Jjap.33.7061  0.408
1994 Yasuda T, Bjorkman C, Ma Y, Lu Z, Lucovsky G, Emmerichs U, Meyer C, Leo K, Kurz H. Integration of wet-chemical processing with low-temperature plasma-assisted processes for the formation of device-quality Si/SiO2 interfaces on Si(111) surfaces Microelectronic Engineering. 25: 217-222. DOI: 10.1016/0167-9317(94)90018-3  0.311
1994 Misra V, Hattangady S, Xu XL, Watkins MJ, Hornung B, Lucovsky G, Wortman JJ, Emmerichs U, Meyer C, Leo K, Kurz H. Integrated processing of stacked-gate heterostructures: plasma-assisted low temperature processing combined with rapid thermal high-temperature processing Microelectronic Engineering. 25: 209-214. DOI: 10.1016/0167-9317(94)90017-5  0.311
1994 Lucovsky G, Yasuda T, Ma Y, Hattangady S, Misra V, Xu X, Hornung B, Wortman J. Low-temperature plasma-assisted oxidation of Si: a new approach for creation of device-quality SiSiO2 interfaces with deposited dielectrics for applications in Si MOSFET technologies Journal of Non-Crystalline Solids. 179: 354-366. DOI: 10.1016/0022-3093(94)90716-1  0.331
1993 Esser A, Heesel H, Kurz H, Wang C, Parsons GN, Lucovsky G. Transport properties of optically generated free carriers in hydrogenated amorphous silicon in the femtosecond time regime. Physical Review. B, Condensed Matter. 47: 3593-3597. PMID 10006458 DOI: 10.1103/Physrevb.47.3593  0.528
1993 Lucovsky G, Yasuda T, Ma Y, Hattangady S, Xu X, Misra V, Hornung B, Wortman J. Control of Si-SiO2 Interface Properties in MOS Devices Prepared by Plasma-Assisted and Rapid Thermal Processes Mrs Proceedings. 318. DOI: 10.1557/Proc-318-81  0.32
1993 Jing Z, Lucovsky G, Whitten JL. Chemical Modification of Surface Steps on SI(111) Vicinal Wafers: a Bonding Model for Phase Changes in Second Harmonic Generation Mrs Proceedings. 318. DOI: 10.1557/PROC-318-287  0.302
1993 Wan Z, Yasuda T, Lucovsky G, Lamb HH. Electron Cycloytron Resonance Plasma Etching/Cleaning For Si Device Fabrication Mrs Proceedings. 315. DOI: 10.1557/Proc-315-225  0.382
1993 Habermehl S, He SS, Chen YL, Lucovsky G. Microstructure of Si Films Deposited on Si(100) Surfaces by Remote Plasma-Enhanced Chemicalvapor Deposition, Rpecvd: Dependence on Process Pressure and Substrate Temperature Mrs Proceedings. 311. DOI: 10.1557/PROC-311-379  0.333
1993 Hattiangady S, Xu X, Watkins M, Hornung B, Misra V, Lucovsky G, Wortman J. A Dual-Function UHV-Compatible Chamber for i) Low-Temperature Plasma-Assisted Oxidation, and ii) High-Temperature Rapid Thermal Processing of Si-Based Dielectric Gate Heterostructures Mrs Proceedings. 300. DOI: 10.1557/Proc-300-581  0.356
1993 Ma Y, Yasuda T, Lucovsky G. Nitrogen-Atom Bonding at SiO2/Si Interfaces in Metalinsulator-Semiconductor (MIS) Stacked Gates Made by Integration of Plasma Assisted Oxidation-Deposition and Rapid Thermal Processing Mrs Proceedings. 300. DOI: 10.1557/PROC-300-569  0.386
1993 He S, Stephens D, Lucovsky G. Improved Electrical Performance of a-Si:H Thin Film Transistors, TFTs with n+ (μc-Si Contact, and Silicon Oxide and Nitride Dual-Layer Dielectrics Mrs Proceedings. 297. DOI: 10.1557/PROC-297-871  0.302
1993 Williams M, Cho S, Lucovsky G. Hydrogenated Amorphous Silicon-Nitrogen, a-Si,N:H ALLOYS: An Alternative to A-SI,C:H for the Wide Band Gap Photo-Active Material in Tandem PV Cells Mrs Proceedings. 297. DOI: 10.1557/PROC-297-759  0.316
1993 Chen Y, Bentley J, Wang C, Lucovsky G, Maher D. Electron Microscopy Studies of Undoped and Phosphorus Doped Si:H and Si,C:H Films Mrs Proceedings. 297. DOI: 10.1557/PROC-297-711  0.335
1993 Lucovsky G, Bachmann KJ, Choi SW. Epitaxial growth of GaP by remote plasma-enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 626-630. DOI: 10.1116/1.578782  0.442
1993 Yasuda T, Ma Y, Chen YL, Lucovsky G, Maher D. Effects of predeposition HF/NH4F treatments on the electrical properties of SiO2/Si structures formed by low‐temperature plasma‐assisted oxidation and deposition processes Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 11: 945-951. DOI: 10.1116/1.578573  0.334
1993 Esser A, Heesel H, Kurz H, Wang C, Parsons GN, Lucovsky G. Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a-Si:H Journal of Applied Physics. 73: 1235-1239. DOI: 10.1063/1.353263  0.56
1993 Kelliher JT, Thornton J, Dietz N, Lucovsky G, Bachmann KJ. Low temperature chemical beam epitaxy of gallium phosphide/silicon heterostructures Materials Science and Engineering B. 22: 97-102. DOI: 10.1016/0921-5107(93)90232-C  0.319
1993 Lucovsky G. Low-temperature plasma-assisted processes for fabrication of SiO2/Si heterostructures Advanced Materials For Optics and Electronics. 2: 43-51. DOI: 10.1002/Amo.860020106  0.465
1992 Jing Z, Whitten JL, Lucovsky G. Si-H bond in O-substitutional doping of a-Si:H. Physical Review. B, Condensed Matter. 45: 13978-13983. PMID 10001514 DOI: 10.1103/Physrevb.45.13978  0.395
1992 He SS, Stephens DJ, Lucovsky G, Hamaker RW. High Channel Mobility a-Si:H Thin Film Transistors with Oxide/Nitride Dielectrics Mrs Proceedings. 284. DOI: 10.1557/PROC-284-413  0.33
1992 Lucovsky G, Ma Y, He SS, Yasuda T, Stephens DJ, Habermehl S. Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition Mrs Proceedings. 284. DOI: 10.1557/PROC-284-33  0.374
1992 Ma Y, Yasuda T, Chen YL, Lucovsky G, Maher DM. Electrical Properties of Oxide-Nitride-Oxide, Ono, Heterostructures Fabricated by Low Temperature Remote PECVD Mrs Proceedings. 284. DOI: 10.1557/PROC-284-147  0.322
1992 Gu SQ, Viner JM, Taylor PC, Williams MJ, Turner WA, Lucovsky G. Photoluminescence in B-doped μc-Si:H Mrs Proceedings. 283. DOI: 10.1557/PROC-283-579  0.318
1992 Yasuda T, Lucovsky G. Integrated, Dual-Function Remote Plasma-Enhanced Processing Applied to Low Damage SiO2 Etching and Removal of C-F Polymer Residues Mrs Proceedings. 282. DOI: 10.1557/PROC-282-523  0.303
1992 He SS, Stephens DJ, Hamaker RW, Lucovsky G. Channel Layer Surface Modifications in a-Si:II thin Film Transistors With Oxide/Nitride Dielectric Layers Mrs Proceedings. 282. DOI: 10.1557/PROC-282-505  0.332
1992 He SS, Stephens DJ, Ma Y, Yasuda T, Habermahl S, Lucovsky G. Control of Process-Induced Defects in the Formation of Single and Multiple layer dielectric Structures for Si Semiconductor Devices Mrs Proceedings. 262. DOI: 10.1557/PROC-262-653  0.384
1992 Yasuda T, Ma Y, Habermehl S, Lucovsky G. Comparison of Trapping States at SiO2/Si Interfaces on si(100), (110), and (111) Prepared by Plasma-Assisted Oxidation and Oxide Deposition, and by Exposure to Atomic H Prior to Oxidation and Deposition Mrs Proceedings. 262. DOI: 10.1557/PROC-262-473  0.39
1992 Ma Y, Yasuda T, Habermehl S, He S, Stephens D, Lucovsky G. A New Two-Step Plasma-Assisted Surface Cleaningoxidation and Film-Deposition Process Sequence for The Formation of Si(100)/SiO2 Interfaces with Low Densities of Interfacial Traps Mrs Proceedings. 259. DOI: 10.1557/PROC-259-69  0.353
1992 Lee D, Lucovsky G. Work Function Difference Between N-Type μc-Si Gate Electrodes Deposited by Remote Pecvd and P-Type c-Si Substrates in Mos Capacitors Mrs Proceedings. 258. DOI: 10.1557/PROC-258-979  0.301
1992 Cho S, Davidson B, Lucovsky G. Energy Differences Between the Si and the Ge Dangling Bond Defects in a-Si1-xGex Alloys Mrs Proceedings. 258. DOI: 10.1557/PROC-258-583  0.353
1992 Jing Z, Whitten JL, Lucovsky G. Contributions to Silicon-Hydrogen Bond-Stretching Frequency in Amorphous Si Alloys Mrs Proceedings. 258. DOI: 10.1557/PROC-258-287  0.311
1992 Lucovsky G, Ma Y, Silvestre C, Yasuda T, Hauser JR. Device-quality sio2/si(100) interfaces prepared by a two-step remote plasma-assisted oxidation-depositon process Japanese Journal of Applied Physics. 31: 4387-4395. DOI: 10.1143/Jjap.31.4387  0.352
1992 Ma Y, Yasuda T, Habermehl S, Lucovsky G. Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition of SiO2 on plasma‐processed Si substrates Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 10: 781-787. DOI: 10.1116/1.578163  0.304
1992 Chen YL, Wang C, Lucovsky G, Maher DM, Nemanich RJ. Transmission electron microscopy and vibrational spectroscopy studies of undoped and doped Si,H and Si,C:H films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 874-880. DOI: 10.1116/1.577687  0.361
1992 Lucovsky G. Hydrogen in amorphous silicon: local bonding and vibrational properties Journal of Non-Crystalline Solids. 141: 241-256. DOI: 10.1016/S0022-3093(05)80539-3  0.435
1992 Lucovsky G, Yasuda T, Ma Y, Habermehl S, He S, Stephens D. Low temperature plasma-assisted oxidation and thin-film deposition processes for forming device-quality SiO2/Si and composite dielectric-SiO2/Si heterostructures Thin Solid Films. 220: 38-44. DOI: 10.1016/0040-6090(92)90545-M  0.362
1991 Yasuda T, Ma Y, Lucovsky G. Low-Temperature Device-Quality SiO2/Si (100) Interfaces Prepared By A Combined Remote Plasma Oxidation-Deposition Process Mrs Proceedings. 238. DOI: 10.1557/PROC-238-713  0.354
1991 Ma Y, Yasuda T, Habermehl S, Lucovsky G. Si-N Bonding at The SiO2/Si Interfaces During Deposition of SiO2 by the Remote Pecvd Process Mrs Proceedings. 235. DOI: 10.1557/PROC-235-799  0.351
1991 Wang C, Lucovsky G, Nemanich RJ. Deposition of Amorphous and Microcrystalline Si,C Alloy Thin Films by a Remote Plasma-Enhanced Chemical-Vapor Deposition Process Mrs Proceedings. 219. DOI: 10.1557/PROC-219-751  0.345
1991 Lee DR, Bjorkman CH, Wang C, Lucovsky G. Studies of MOS and Heterojunction Devices Using Doped μc-Si and a-Si Mrs Proceedings. 219. DOI: 10.1557/PROC-219-395  0.336
1991 Williams MJ, Wang C, Lucovsky G. Deposition and Characterization of Near “Intrinsic” μc-Si Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition - RPECVD Mrs Proceedings. 219. DOI: 10.1557/PROC-219-389  0.361
1990 Esser A, Seibert K, Kurz H, Parsons GN, Wang C, Davidson BN, Lucovsky G, Nemanich RJ. Ultrafast recombination and trapping in amorphous silicon. Physical Review. B, Condensed Matter. 41: 2879-2884. PMID 9994054 DOI: 10.1016/0022-3093(89)90654-6  0.597
1990 Parsons GN, Lucovsky G. Silicon-hydrogen bond-stretching vibrations in hydrogenated amorphous silicon-nitrogen alloys. Physical Review. B, Condensed Matter. 41: 1664-1667. PMID 9993883 DOI: 10.1103/PhysRevB.41.1664  0.512
1990 Wang C, Bjorkman C, Lee D, Williams M, Lucovsky G. Deposition of Heavily-Doped μc-Silicon Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process (remote PECVD) Mrs Proceedings. 204. DOI: 10.1557/PROC-204-277  0.341
1990 Yasuda T, Ma Y, Habermehl S, Kim SS, Lucovsky G, Schneider TP, Cho J, Nemanich RJ. Si(100) Surface Preparation by In-Situ or in-Vacuo Exposure to Remotely Plasma-Generated Atomic Hydrogen: Applications to Deposited SiO2 and Epitaxial Growth of Si Mrs Proceedings. 202. DOI: 10.1557/PROC-202-395  0.326
1990 Bjorkman CH, Lee DR, Lucovsky G. Intrinsic Growth Stress in Thermally Grown and Annealed SiO2 Thin Films: Control of Stress-Induced Electronically Active Defects at Si/SiO2 Interfaces Mrs Proceedings. 202. DOI: 10.1557/PROC-202-271  0.359
1990 Parsons GN, Wang C, Lucovsky G. Annealing of Irreversible Defects in Hydrogenated and Unhydrogenated Amorphous Silicon Thin Films Mrs Proceedings. 192. DOI: 10.1557/Proc-192-775  0.547
1990 Wang C, Parsons GN, Kim SS, Buehler EC, Nemanich RJ, Lucovsky G. ¼c Silicon Thin Films Deposited by Remote Plasma Enhanced Chemical Vapor Deposition Process Mrs Proceedings. 192. DOI: 10.1557/Proc-192-535  0.561
1990 Kim SS, Wang C, Parsons GN, Lucovsky G. A-Si:H Thin Film Transistors and Logic Circuits Fabricated in an Integrated Multichamber System Mrs Proceedings. 192. DOI: 10.1557/Proc-192-373  0.576
1990 Lucovsky G, Kim SS, Tsu DV, Parsons GN, Fitch JT. Formation of silicon-based heterostructures in multichamber integrated-processing thin-film deposition systems Proceedings of Spie - the International Society For Optical Engineering. 1188: 140-150. DOI: 10.1117/12.963948  0.503
1990 Lucovsky G. Formation of device quality Si/SiO2 interfaces at low substrate temperatures by remote plasma enhanced chemical vapor deposition of SiO2 Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8: 822. DOI: 10.1116/1.584973  0.303
1990 Kim SS, Stephens DJ, Lucovsky G, Fountain GG, Markunas RJ. Substrate temperature dependence of subcutaneous oxidation at Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 8: 2039-2045. DOI: 10.1116/1.576802  0.316
1990 Lucovsky G, Kim SS, Tsu DV, Parsons GN, Fitch JT. Formation of silicon‐based heterostructures in multichamber integrated‐processing thin‐film deposition systems Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 8: 1947-1954. DOI: 10.1116/1.576787  0.564
1990 Parsons GN, Wang C, Williams MJ, Lucovsky G. Post-deposition relaxation of electronic defects in hydrogenated amorphous silicon Applied Physics Letters. 56: 1895-1897. DOI: 10.1063/1.103056  0.608
1990 Parsons GN, Wang C, Lucovsky G. Annealing of "intrinsic" and photo-induced defects in hydrogenated amorphous silicon Thin Solid Films. 193: 577-587. DOI: 10.1016/0040-6090(90)90209-V  0.61
1989 Tsu DV, Lucovsky G, Davidson BN. Effects of the nearest neighbors and the alloy matrix on SiH stretching vibrations in the amorphous SiOr:H (0Physical Review. B, Condensed Matter. 40: 1795-1805. PMID 9992040 DOI: 10.1103/Physrevb.40.1795  0.428
1989 Tsu DV, Kim SS, Theil JA, Wang C, Lucovsky G. Formation of Multilayer SiO2- SiOx Heterostructures by Control of Reaction Pathways in Remote PECVD Mrs Proceedings. 165. DOI: 10.1557/PROC-165-209  0.337
1989 Davidson BN, Parsons GN, Wang C, Lucovsky G. Polyhydride Bonding Groups in PECVD Amorphous Si Thin Films. Mrs Proceedings. 165. DOI: 10.1557/Proc-165-173  0.546
1989 Nemanich R, Buehler E, LeGrice Y, Shroder R, Parsons G, Wang C, Lucovsky G, Boyce J. Raman Scattering from Microcrystalline Films: Considerations of Composite Structures with Different Optical Absorption Properties Mrs Proceedings. 164. DOI: 10.1557/PROC-164-265  0.521
1989 Wang C, Parsons G, Buehler E, Nemanich R, Lucovsky G. Formation of Microcrystalline Silicon film by RMS Process Mrs Proceedings. 164. DOI: 10.1557/Proc-164-21  0.561
1989 Kim S, Tsu D, Lucovsky G, Fountain G, Markunas R. Formation of Device Quality Si/SiO2 Interfaces in a Multichamber Integrated Processing System Mrs Proceedings. 146. DOI: 10.1557/PROC-146-327  0.322
1989 Lucovsky G, Tsu DV, Parsons GN, Kim SS. Multichamber integrated deposition system for silicon based dielectric films Proceedings of Spie - the International Society For Optical Engineering. 1037: 52-72. DOI: 10.1117/12.951015  0.516
1989 Parsons GN, Tsu DV, Wang C, Lucovsky G. Precursors for the deposition of amorphous silicon-hydrogen alloys by remote plasma enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 1124-1129. DOI: 10.1116/1.576240  0.562
1989 Lucovsky G, Parsons GN, Wang C, Davidson BN, Tsu DV. Low-temperature deposition of hydrogenated amorphous silicon (a-Si:H): Control of polyhydride incorporation and its effects on thin film properties Solar Cells. 27: 121-136. DOI: 10.1016/0379-6787(89)90022-7  0.609
1989 Fitch JT, Bjorkman CH, Lucovsky G, Pollak FH, Yin X. Local atomic structure at thermally grown Si/SiO2 interfaces Applied Surface Science. 39: 103-115. DOI: 10.1016/0169-4332(89)90423-6  0.345
1989 Davidson BN, Lucovsky G, Parsons GN, Nemanich RJ, Esser A, Seibert K, Kurz H. Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant Journal of Non-Crystalline Solids. 114: 579-581. DOI: 10.1016/0022-3093(89)90656-X  0.551
1989 Parsons GN, Tsu DV, Lucovsky G. Defects in a-Si:H films produced by remote plasma enhanced chemical vapor deposition Journal of Non-Crystalline Solids. 107: 295-300. DOI: 10.1016/0022-3093(89)90475-4  0.556
1989 Kim SS, Parsons GN, Fountain GG, Lucovsky G. Dependence of a-Sl:H/Si3N4 interface properties on the deposition sequence in amorphous silicon thin film transistor produced by remote PECVD process Journal of Non-Crystalline Solids. 115: 69-71. DOI: 10.1016/0022-3093(89)90363-3  0.58
1989 Wang C, Parsons GN, Lucovsky G. Effects of gas additives on the properties of a-Si:H films Journal of Non-Crystalline Solids. 114: 193-195. DOI: 10.1016/0022-3093(89)90110-5  0.56
1989 Parsons GN, Wang C, Williams MJ, Lucovsky G. Reduction of defects by high temperature annealing (150°C-240°C) in hydrogenated amorphous silicon films deposited at room temperature Journal of Non-Crystalline Solids. 114: 178-180. DOI: 10.1016/0022-3093(89)90105-1  0.533
1989 Lucovsky G, Davidson BN, Parsons GN, Wang C. Incorporation of polyhydride bonding groups into thin films of hydrogenated amrophous silicon (a-;Si:H) Journal of Non-Crystalline Solids. 114: 154-156. DOI: 10.1016/0022-3093(89)90097-5  0.559
1988 Nemanich RJ, Glass JT, Lucovsky G, Shroder RE. Raman scattering characterization of carbon bonding in diamond and diamondlike thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1783-1787. DOI: 10.1116/1.575297  0.365
1988 Tsu DV, Parsons GN, Lucovsky G. Spectroscopic emission studies of O2/He and N2/He plasmas in remote plasma enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1849-1854. DOI: 10.1116/1.575267  0.581
1988 Parsons GN, Tsu DV, Lucovsky G. Properties of intrinsic and doped a-Si:H deposited by remote plasma enhanced chemical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1912-1916. DOI: 10.1116/1.575244  0.588
1987 Tsu DV, Lucovsky G. Bonded Hydrogen in Silicon Oxide Thin Films Deposited By Remote Plasma Enhanced Chemical Vapor Deposition Mrs Proceedings. 98. DOI: 10.1557/PROC-98-285  0.347
1987 Fitch J, Lucovsky G. Rapid Thermal Annealing of Low Temperature Silicon Dioxide Films Mrs Proceedings. 92. DOI: 10.1557/PROC-92-89  0.33
1987 Fitch JT, Lucovsky G. The Effect of Growth Ambients on the Local Atomic Structure of Thermally Grown Silicon Dioxide Thin Films Mrs Proceedings. 105. DOI: 10.1557/PROC-105-151  0.303
1987 Kim SS, Tsu DV, Lucovsky G. The Electrical Properties of Silicon Oxide Deposited By Remote Plasma Enhanced Chemical Vapor Deposition (Rpecvd). Mrs Proceedings. 105. DOI: 10.1557/PROC-105-121  0.316
1987 Lucovsky G. Low-temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5: 530. DOI: 10.1116/1.583944  0.413
1987 Parsons GN, Kusano C, Lucovsky G. Photoelectronic properties of a‐Si:H and a‐Ge:H thin films in surface cell structures Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 5: 1655-1660. DOI: 10.1116/1.574541  0.553
1987 Lucovsky G, Tsu DV. Deposition of silicon oxide, nitride and oxynitride thin films by remote plasma enhanced chemical vapor deposition Journal of Non-Crystalline Solids. 90: 259-266. DOI: 10.1016/S0022-3093(87)80424-6  0.409
1987 Cook JW, Parsons GN, Kusano C, Lucovsky G. Bonding defects in amorphous silicon alloys Solar Cells. 21: 387-397. DOI: 10.1016/0379-6787(87)90137-2  0.575
1987 Parsons GN, Tsu DV, Lucovsky G. Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition (RPECVD) Journal of Non-Crystalline Solids. 97: 1375-1378. DOI: 10.1016/0022-3093(87)90329-2  0.591
1987 Wong CK, Lucovsky G, Bernholc J. Intrinsic localized defect states in a-Se associated with dihedral angle distortions Journal of Non-Crystalline Solids. 97: 1171-1174. DOI: 10.1016/0022-3093(87)90279-1  0.34
1986 Tsu DV, Lucovsky G, Mantini MJ. Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition. Physical Review. B, Condensed Matter. 33: 7069-7076. PMID 9938035 DOI: 10.1103/Physrevb.33.7069  0.468
1986 Burnhara NA, Fisher RF, Asher SE, Kazmerski LL, Lucovsky G, Parsons GN. Core and Valence Levels in Hydrogemated Amorphous Silicon Mrs Proceedings. 77. DOI: 10.1557/PROC-77-691  0.568
1986 Tsu D, Lucovsky G. The Growth of Silicon Oxide Films by Remote Plasma Enhanced CVD Mrs Proceedings. 77. DOI: 10.1557/PROC-77-595  0.345
1986 Lin SY, Lucovsky G, Guha S, Payson JS. Electronic Structure of Divalent Defects in Tetrahedrally Bonded Amorphous Materials Mrs Proceedings. 70. DOI: 10.1557/PROC-70-107  0.351
1986 Parsons GN, Cook JW, Lucovsky G, Lin SY, Mantini MJ. Deposition of a‐Si,Sn:H alloy films by reactive magnetron sputtering from separate Si and Sn targets Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 470-474. DOI: 10.1116/1.573910  0.615
1986 Pai PG, Chao SS, Takagi Y, Lucovsky G. Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 689-694. DOI: 10.1116/1.573833  0.444
1986 Chao S, Takagi Y, Lucovsky G, Pai P, Custer R, Tyler J, Keem J. Chemical states study of Si in SiOx films grown by PECVD Applied Surface Science. 26: 575-583. DOI: 10.1016/0169-4332(86)90128-5  0.308
1985 Lucovsky G, Rudder R, Cook J, Lin S. Local Bonding in A—Sige Alloy Films Mrs Proceedings. 49. DOI: 10.1557/PROC-49-135  0.345
1985 Lucovsky G. Near neighbor chemical bonding effects on Si atom native bonding defects in silicon nitride and silicon dioxide insulators Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 3: 1122. DOI: 10.1116/1.583066  0.318
1985 Pankove JI, Zanzucchi PJ, Magee CW, Lucovsky G. Hydrogen localization near boron in silicon Applied Physics Letters. 46: 421-423. DOI: 10.1063/1.95599  0.375
1985 Mosley LE, Paesler MA, Lucovsky G, Waltner A, Wortman JJ. Bonding of fluorine-implanted and annealed silicon Solid State Communications. 53: 513-517. DOI: 10.1016/0038-1098(85)90181-4  0.395
1985 Rudder RA, Parsons GN, Cook JW, Lucovsky G. Low defect density a-Si, Ge:H alloy films produced by magnetron sputtering from separate Si and Ge cathodes Journal of Non-Crystalline Solids. 77: 885-888. DOI: 10.1016/0022-3093(85)90802-6  0.601
1985 Mosley LE, Paesler MA, Lucovsky G, Musameh S, Waltner A, Wortman JJ. Reversible metastable configurations in amorphous silicon Journal of Non-Crystalline Solids. 77: 249-252. DOI: 10.1016/0022-3093(85)90650-7  0.415
1984 Rudder RA, Cook JW, Schetzina JF, Lucovsky G. Planar magnetron sputtering of a-Si:H and a-Ge:H thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 326-329. DOI: 10.1116/1.572593  0.309
1984 Rudder RA, Cook JW, Lucovsky G. High photoconductivity in dual magnetron sputtered amorphous hydrogenated silicon and germanium alloy films Applied Physics Letters. 45: 887-889. DOI: 10.1063/1.95402  0.312
1982 Pollard WB, Lucovsky G. Phonons in polysilane alloys Physical Review B. 26: 3172-3180. DOI: 10.1103/Physrevb.26.3172  0.405
1980 Lucovsky G. Vibrational spectroscopy of hydrogenated amorphous silicon alloys Solar Cells. 2: 431-442. DOI: 10.1016/0379-6787(80)90019-8  0.364
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