Ritesh A. Jhaveri, Ph.D. - Publications

Affiliations: 
2010 University of California, Los Angeles, Los Angeles, CA 
Area:
Electronics and Electrical Engineering, Solid State Physics

9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Kim J, Jhaveri R, Woo JCS, Yang CKK. Circuit-level performance evaluation of schottky tunneling transistor in mixed-signal applications Ieee Transactions On Nanotechnology. 10: 291-299. DOI: 10.1109/Tnano.2009.2039646  0.579
2011 Jhaveri R, Nagavarapu V, Woo JCS. Effect of pocket doping and annealing schemes on the source-pocket tunnel field-effect Transistor Ieee Transactions On Electron Devices. 58: 80-86. DOI: 10.1109/Ted.2010.2089525  0.631
2010 Zhu J, Jhaveri R, Woo JCS. The effect of traps on the performance of graphene field-effect transistors Applied Physics Letters. 96: 193503. DOI: 10.1063/1.3428785  0.378
2009 Venkatagirish N, Tura A, Jhaveri R, Chang HY, Woo J. The Tunnel Source n-MOSFET: A Novel Asymmetric Device for Low Power Applications The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.A-1-7  0.76
2009 Jhaveri R, Nagavarapu V, Woo JCS. Asymmetric Schottky tunneling source SOI MOSFET design for mixed-mode applications Ieee Transactions On Electron Devices. 56: 93-99. DOI: 10.1109/Ted.2008.2008161  0.629
2008 Nagavarapu V, Jhaveri R, Woo JCS. The tunnel source (PNPN) n-MOSFET: A novel high performance transistor Ieee Transactions On Electron Devices. 55: 1013-1019. DOI: 10.1109/Ted.2008.916711  0.637
2007 Jhaveri R, Woo JCS. Analog Performance of Asymmetric Schottky Tunneling Source nFET for RF and Mixed- Mode Application The Japan Society of Applied Physics. 2007: 902-903. DOI: 10.7567/Ssdm.2007.B-10-4  0.447
2006 Girish NV, Jhaveri R, Woo JCS. Asymmetric Tunneling Source Mosfets: A Novel Device Solution For Sub-100Nm Cmos Technology International Journal of High Speed Electronics and Systems. 16: 95-102. DOI: 10.1142/S0129156406003552  0.678
2005 Dimitropoulos D, Jhaveri R, Claps R, Woo JCS, Jalali B. Lifetime of photogenerated carriers in silicon-on-insulator rib waveguides Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1866635  0.362
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