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Marjorie A. Olmstead - Publications

Affiliations: 
University of Washington, Seattle, Seattle, WA 
Area:
Condensed Matter Physics, Materials Science Engineering
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62 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Krueger BW, Dandeneau CS, Nelson EM, Dunham ST, Ohuchi FS, Olmstead MA. Variation of Band Gap and Lattice Parameters of β-(AlxGa1-x)2O3 Powder Produced by Solution Combustion Synthesis Journal of the American Ceramic Society. DOI: 10.1111/Jace.14222  0.379
2014 Dandeneau CS, Yang Y, Krueger BW, Olmstead MA, Bordia RK, Ohuchi FS. Site occupancy and cation binding states in reduced polycrystalline Sr xBa1-xNb2O6 Applied Physics Letters. 104. DOI: 10.1063/1.4868243  0.317
2012 Lovejoy TC, Chen R, Yitamben EN, Shutthanadan V, Heald SM, Villora EG, Shimamura K, Zheng S, Dunham ST, Ohuchi FS, Olmstead MA. Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β-Ga 2O 3 Journal of Applied Physics. 111. DOI: 10.1063/1.4729289  0.656
2012 Lovejoy TC, Chen R, Zheng X, Villora EG, Shimamura K, Yoshikawa H, Yamashita Y, Ueda S, Kobayashi K, Dunham ST, Ohuchi FS, Olmstead MA. Band bending and surface defects in β-Ga 2O 3 Applied Physics Letters. 100. DOI: 10.1063/1.4711014  0.668
2011 Lovejoy TC, Yitamben EN, Heald SM, Ohuchi FS, Olmstead MA. Controlling the growth morphology and phase segregation of Mn-doped Ga 2Se3 on Si(001) Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.155312  0.722
2011 Yitamben EN, Lovejoy TC, Pakhomov AB, Heald SM, Negusse E, Arena D, Ohuchi FS, Olmstead MA. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga 2Se3/Si(001) Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.045203  0.715
2010 Lovejoy TC, Yitamben EN, Ohta T, Fain SC, Ohuchi FS, Olmstead MA. One-dimensional electronic states in Ga2Se3 on Si(001):As Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.245313  0.726
2010 White MA, Lovejoy TC, Ochsenbein ST, Olmstead MA, Gamelin DR. Sputtering-induced Co0 formation in x-ray photoelectron spectroscopy of nanocrystalline Zn1-xCoxO spinodal enrichment models Journal of Applied Physics. 107. DOI: 10.1063/1.3407517  0.682
2009 Yitamben EN, Lovejoy TC, Paul DF, Callaghan JB, Ohuchi FS, Olmstead MA. Surface morphology of Cr: Ga2 Se3 heteroepitaxy on Si(001) Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.075314  0.711
2009 Lovejoy TC, Yitamben EN, Heald SM, Ohuchi FS, Olmstead MA. MnSe phase segregation during heteroepitaxy of Mn doped Ga2 Se3 on Si(001) Applied Physics Letters. 95. DOI: 10.1063/1.3273858  0.776
2009 Lovejoy TC, Yitamben EN, Shamir N, Morales J, Villora EG, Shimamura K, Zheng S, Ohuchi FS, Olmstead MA. Surface morphology and electronic structure of bulk single crystal Β -Ga 2 O 3 (100) Applied Physics Letters. 94. DOI: 10.1063/1.3086392  0.694
2008 Lu CY, Adams JA, Yu Q, Ohta T, Olmstead MA, Ohuchi FS. Heteroepitaxial growth of the intrinsic vacancy semiconductor Al2 Se3 on Si(111): Initial structure and morphology Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.075321  0.488
2008 Lu CY, Shamberger PJ, Yitamben EN, Beck KM, Joly AG, Olmstead MA, Ohuchi FS. Laser and electrical current induced phase transformation of In 2Se3 semiconductor thin film on Si(111) Applied Physics a: Materials Science and Processing. 93: 93-98. DOI: 10.1007/S00339-008-4776-8  0.744
2006 Schmidt DA, Ohta T, Yu Q, Olmstead MA. Influence of perovskite termination on oxide heteroepitaxy Journal of Applied Physics. 99: 113521. DOI: 10.1063/1.2202197  0.742
2006 Schmidt DA, Ohta T, Lu CY, Bostwick AA, Yu Q, Rotenberg E, Ohuchi FS, Olmstead MA. Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si(001) Applied Physics Letters. 88. DOI: 10.1063/1.2199451  0.812
2006 Klust A, Yu Q, Olmstead MA, Ohta T, Ohuchi FS, Bierkandt M, Deiter C, Wollschläger J. Contrast in scanning probe microscopy images of ultrathin insulator films Applied Physics Letters. 88. DOI: 10.1063/1.2172397  0.425
2005 Ohta T, Schmidt DA, Meng S, Klust A, Bostwick A, Yu Q, Olmstead MA, Ohuchi FS. Intrinsic vacancy-induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001). Physical Review Letters. 94: 116102. PMID 15903873 DOI: 10.1103/Physrevlett.94.116102  0.805
2005 Klust A, Ohta T, Bostwick AA, Rotenberg E, Yu Q, Ohuchi FS, Olmstead MA. Electronic structure evolution during the growth of ultrathin insulator films on semiconductors: From interface formation to bulklike CaF2Si(111) films Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.205336  0.682
2005 Adams JA, Bostwick A, Ohta T, Ohuchi FS, Olmstead MA. Heterointerface formation of aluminum selenide with silicon: Electronic and atomic structure of Si(111):AlSe Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.195308  0.75
2005 Rudolph R, Pettenkofer C, Bostwick AA, Adams JA, Ohuchi F, Olmstead MA, Jaeckel B, Klein A, Jaegermann W. Electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination New Journal of Physics. 7: 108-108. DOI: 10.1088/1367-2630/7/1/108  0.738
2005 Adams JA, Bostwick AA, Ohuchi FS, Olmstead MA. Chemical passivity of III-VI bilayer terminated Si(111) Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2112200  0.732
2004 Ohta T, Klust A, Adams JA, Yu Q, Olmstead MA, Ohuchi FS. Atomic structures of defects at GaSe/Si(111) heterointerfaces studied by scanning tunneling microscopy Physical Review B. 69. DOI: 10.1103/physrevb.69.125322  0.429
2004 Ohta T, Klust A, Adams JA, Yu Q, Olmstead MA, Ohuchi FS. Atomic structures of defects at GaSe/Si(111) heterointerfaces studied by scanning tunneling microscopy Physical Review B - Condensed Matter and Materials Physics. 69: 1253221-1253228. DOI: 10.1103/Physrevb.69.125322  0.536
2004 Klust A, Ohta T, Bostwick AA, Yu Q, Ohuchi FS, Olmstead MA. Atomically resolved imaging of a CaF bilayer on Si(111): Subsurface atoms and the image contrast in scanning force microscopy Physical Review B - Condensed Matter and Materials Physics. 69: 354051-354055. DOI: 10.1103/Physrevb.69.035405  0.608
2001 Meng S, Schroeder B, Bostwick A, Olmstead MA, Rotenberg E, Ohuchi FS. Low-energy photoelectron diffraction structure determination of GaSe-bilayer-passivated Si(111) Physical Review B. 64. DOI: 10.1103/PhysRevB.64.235314  0.716
2001 Meng S, Schroeder BR, Bostwick A, Olmstead MA, Rotenberg E, Ohuchi FS. Low-energy photoelectron diffraction structure determination of GaSe-bilayer-passivated Si(111) Physical Review B - Condensed Matter and Materials Physics. 64: 2353141-2353148. DOI: 10.1103/Physrevb.64.235314  0.792
2000 Uberuaga BP, Leskovar M, Smith AP, Jonsson H, Olmstead M. Diffusion of Ge below the Si(100) surface: theory and experiment Physical Review Letters. 84: 2441-4. PMID 11018905 DOI: 10.1103/Physrevlett.84.2441  0.534
2000 Meng S, Schroeder BR, Olmstead MA. Interaction of Se and GaSe with Si(111) Physical Review B. 61: 7215-7218. DOI: 10.1103/Physrevb.61.7215  0.828
2000 Schroeder BR, Meng S, Bostwick A, Olmstead MA, Rotenberg E. Epitaxial growth of laminar crystalline silicon on CaF2 Applied Physics Letters. 77: 1289-1291. DOI: 10.1063/1.1290158  0.823
1998 Rumaner LE, Olmstead MA, Ohuchi FS. Interaction of GaSe with GaAs(111): Formation of heterostructures with large lattice mismatch Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 977-988. DOI: 10.1116/1.590055  0.51
1998 Chegwidden S, Dai Z, Olmstead MA, Ohuchi FS. Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 2376-2380. DOI: 10.1116/1.581355  0.516
1996 Rotenberg E, Denlinger JD, Olmstead MA. Altered photoemission satellites at CaF2- and SrF2-on-Si(111) interfaces. Physical Review. B, Condensed Matter. 53: 1584-1593. PMID 9983622 DOI: 10.1103/Physrevb.53.1584  0.518
1995 Hessinger U, Leskovar M, Olmstead MA. Role of step and terrace nucleation in heteroepitaxial growth morphology: growth kinetics of CaF2/Si(111). Physical Review Letters. 75: 2380-2383. PMID 10059289 DOI: 10.1103/Physrevlett.75.2380  0.508
1995 Denlinger JD, Rotenberg E, Hessinger U, Leskovar M, Olmstead MA. Growth kinetics of CaF2/Si(111) heteroepitaxy: An x-ray photoelectron diffraction study. Physical Review. B, Condensed Matter. 51: 5352-5365. PMID 9979416 DOI: 10.1103/Physrevb.51.5352  0.471
1994 Rotenberg E, Denlinger JD, Leskovar M, Hessinger U, Olmstead MA. Layer-by-layer resolved core-level shifts in CaF2 and SrF2 on Si(111): Theory and experiment. Physical Review. B, Condensed Matter. 50: 11052-11069. PMID 9975214 DOI: 10.1103/Physrevb.50.11052  0.529
1993 Wong GC, Loretto D, Rotenberg E, Olmstead MA, Lucas CA. CaF2-Si(111) as a model ionic-covalent system: Transition from chemisorption to epitaxy. Physical Review. B, Condensed Matter. 48: 5716-5719. PMID 10009103 DOI: 10.1103/Physrevb.48.5716  0.49
1993 Denlinger JD, Rotenberg E, Hessingert U, Leskovar M, Olmstead MA. Kinetic Control of CaF2 on Si(111) Growth Morphology Mrs Proceedings. 312. DOI: 10.1557/PROC-312-207  0.39
1993 Denlinger JD, Rotenberg E, Hessinger U, Leskovar M, Olmstead MA. Variable growth modes of CaF2 on Si(111) determined by x-ray photoelectron diffraction Applied Physics Letters. 62: 2057-2059. DOI: 10.1063/1.109478  0.472
1992 Rotenberg E, Olmstead MA. Local-field corrections to surface and interface core-level shifts in insulators. Physical Review. B, Condensed Matter. 46: 12884-12887. PMID 10003234 DOI: 10.1103/Physrevb.46.12884  0.412
1991 Denlinger JD, Olmstead MA, Rotenberg E, Patel JR, Fontes E. Atomic-size effects on the growth of SrF2 and (Ca,Sr)F2 on Si(111). Physical Review. B, Condensed Matter. 43: 7335-7338. PMID 9998205 DOI: 10.1103/Physrevb.43.7335  0.441
1990 Olmstead MA, Bringans RD. Role of lattice mismatch and surface chemistry in the formation of epitaxial semiconductor-insulator interfaces. Physical Review. B, Condensed Matter. 41: 8420-8430. PMID 9993167 DOI: 10.1103/Physrevb.41.8420  0.572
1989 Bringans RD, Olmstead MA. Bonding of Se and ZnSe to the Si(100) surface. Physical Review. B, Condensed Matter. 39: 12985-12988. PMID 9948190 DOI: 10.1103/Physrevb.39.12985  0.596
1988 Northrup JE, Bringans RD, Uhrberg RI, Olmstead MA, Bachrach RZ. Electronic and atomic structure of GaAs epitaxial overlayers on Si(111). Physical Review Letters. 61: 2957-2960. PMID 10039274 DOI: 10.1103/Physrevlett.61.2957  0.535
1988 Bringans RD, Olmstead MA, Ponce FA, Biegelsen DK, Krusor BS, Yingling RD. The Influence of Substrate Surface Chemistry on GaAs - on - Si Growth Mrs Proceedings. 116. DOI: 10.1557/Proc-116-51  0.571
1988 Olmstead MA, Bringans RD. Chemical Bonding and Lattice Mismatch in Semiconductorinsulator Heteroepitaxy: SrF2 on Si(111) Mrs Proceedings. 116. DOI: 10.1557/Proc-116-419  0.596
1988 Bringans RD, Olmstead MA, Ponce FA, Biegelsen DK, Krusor BS, Yingling RD. The effect of a Ga prelayer on the beginning of GaAs epitaxy on Si Journal of Applied Physics. 64: 3472-3475. DOI: 10.1063/1.341481  0.518
1987 Bringans RD, Olmstead MA, Uhrberg RI, Bachrach RZ. Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As. Physical Review. B, Condensed Matter. 36: 9569-9580. PMID 9942852 DOI: 10.1103/Physrevb.36.9569  0.572
1987 Uhrberg RI, Bringans RD, Olmstead MA, Bachrach RZ, Northrup JE. Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface. Physical Review. B, Condensed Matter. 35: 3945-3951. PMID 9941918 DOI: 10.1103/Physrevb.35.3945  0.515
1987 Olmstead MA, Uhrberg RI, Bringans RD, Bachrach RZ. Photoemission study of bonding at the CaF2-on-Si(111) interface. Physical Review. B, Condensed Matter. 35: 7526-7532. PMID 9941058 DOI: 10.1103/Physrevb.35.7526  0.493
1987 Bringans RD, Olmstead MA, Uhrberg RIG, Bachrach RZ. GaAs – on – Si Epitaxy: Results for Coverage of ∼ 1 Monolayer Mrs Proceedings. 94. DOI: 10.1557/Proc-94-201  0.59
1987 Bachrach RZ, Bringans RD, Olmstead MA, Uhrberg RIG. SYNCHROTRON RADIATION STUDIES OF MBE FORMED SEMICONDUCTOR INTERFACES: Si-GaAs AND GaAs-Si Modern Physics Letters B. 1: 97-109. DOI: 10.1142/S0217984987000144  0.586
1987 Bringans RD, Uhrberg RIG, Olmstead MA, Bachrach RZ, Northrup JE. Model semiconductor surfaces: Arsenic termination of the ge(111), si(111) and si(100) surfaces Physica Scripta. 1987: 7-12. DOI: 10.1088/0031-8949/1987/T17/001  0.548
1987 Bringans RD, Olmstead MA, Uhrberg RIG, Bachrach RZ. Formation of the interface between GaAs and Si: Implications for GaAs-on-Si heteroepitaxy Applied Physics Letters. 51: 523-525. DOI: 10.1063/1.98386  0.601
1986 Olmstead MA, Bringans RD, Uhrberg RI, Bachrach RZ. Arsenic overlayer on Si(111): Removal of surface reconstruction. Physical Review. B, Condensed Matter. 34: 6041-6044. PMID 9940474 DOI: 10.1103/Physrevb.34.6041  0.49
1986 Bringans RD, Uhrberg RI, Olmstead MA, Bachrach RZ. Surface bands for single-domain 2 x 1 reconstructed Si(100) and Si(100): As. Photoemission results for off-axis crystals. Physical Review. B, Condensed Matter. 34: 7447-7450. PMID 9939420 DOI: 10.1103/Physrevb.34.7447  0.536
1986 Olmstead MA, Amer NM. Temperature dependence of the Si and Ge (111)2 x 1 surface-state optical absorption. Physical Review. B, Condensed Matter. 33: 2564-2573. PMID 9938595 DOI: 10.1103/Physrevb.33.2564  0.456
1986 Olmstead MA, Chadi DJ. Theory of the temperature dependence of Si(111)2 x 1 surface-state optical absorption. Physical Review. B, Condensed Matter. 33: 8402-8409. PMID 9938236 DOI: 10.1103/Physrevb.33.8402  0.434
1986 Olmstead MA. Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF2 on Si(111) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4: 1123. DOI: 10.1116/1.583554  0.552
1986 Olmstead MA. Optical properties and atomic structure of cleaved silicon and germanium (111) surfaces Surface Science Reports. 6: 159-252. DOI: 10.1016/0167-5729(87)90003-3  0.376
1984 Olmstead MA, Amer NM. Direct Measurement of the Polarization Dependence of Si(111)2×1 Surface-State Absorption by Use of Photothermal Displacement Spectroscopy Physical Review Letters. 52: 1148-1151. DOI: 10.1103/Physrevlett.52.1148  0.449
1984 Olmstead MA, Amer NM. POLARIZATION DEPENDENCE OF Ge(111) 2x1 SURFACE STATE ABSORPTION USING PHOTOTHEEMAL DISPLACEMENT SPECTRDSCOPY: A TEST OF SURFACE RECONSTRUCTION MODELS Physical Review B. 29: 7048-7050. DOI: 10.1103/Physrevb.29.7048  0.379
1983 Olmstead MA, Amer NM, Kohn S, Fournier D, Boccara AC. Photothermal displacement spectroscopy: An optical probe for solids and surfaces Applied Physics a Solids and Surfaces. 32: 141-154. DOI: 10.1007/Bf00616610  0.324
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