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Taisuke Ohta, Ph.D. - Publications

Affiliations: 
2004 University of Washington, Seattle, Seattle, WA 
Area:
Materials Science Engineering, Condensed Matter Physics
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54 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Thomas CJ, Fonseca JJ, Spataru CD, Robinson JT, Ohta T. Electronic Structure and Stacking Arrangement of Tungsten Disulfide at the Gold Contact. Acs Nano. PMID 34623816 DOI: 10.1021/acsnano.1c06676  0.334
2019 Berg M, Liu F, Smith S, Copeland RG, Chan CK, Mohite AD, Beechem TE, Ohta T. Imaging Atomically Thin Semiconductors Beneath Dielectrics via Deep Ultraviolet Photoemission Electron Microscopy Physical Review Applied. 12. DOI: 10.1103/Physrevapplied.12.064064  0.369
2018 Berg M, Kephart JM, Munshi A, Sampath WS, Ohta T, Chan C. Local Electronic Structure Changes in Polycrystalline CdTe with CdClTreatment and Air Exposure. Acs Applied Materials & Interfaces. PMID 29528212 DOI: 10.1021/Acsami.7B18963  0.353
2018 Robinson JT, Culbertson J, Berg M, Ohta T. Work Function Variations in Twisted Graphene Layers. Scientific Reports. 8: 2006. PMID 29386524 DOI: 10.1038/S41598-018-19631-4  0.455
2017 Keyshar K, Berg M, Zhang X, Vajtai R, Gupta G, Chan CK, Beechem TE, Ajayan PM, Mohite AD, Ohta T. Experimental Determination of the Ionization Energies of MoSe2, WS2, and MoS2 on SiO2 Using Photoemission Electron Microscopy. Acs Nano. PMID 28723073 DOI: 10.1021/Acsnano.7B03242  0.36
2017 Berg M, Keyshar K, Bilgin I, Liu F, Yamaguchi H, Vajtai R, Chan C, Gupta G, Kar S, Ajayan P, Ohta T, Mohite AD. Layer dependence of the electronic band alignment of few-layer MoS2 on SiO2 measured using photoemission electron microscopy Physical Review B. 95. DOI: 10.1103/Physrevb.95.235406  0.45
2017 Ohta T, Berg M, Keyshar K, Kephart JM, Beechem TE, Vajtai R, Ajayan P, Mohite AD, Sampath WS, Chan C. Photoemission Electron Microscopy as a New Tool to Study the Electronic Properties of 2D Crystals and Inhomogeneous Semiconductors Microscopy and Microanalysis. 23: 1504-1505. DOI: 10.1017/S1431927617008182  0.313
2016 Beechem TE, Shaffer RA, Nogan J, Ohta T, Hamilton AB, McDonald AE, Howell SW. Self-Heating and Failure in Scalable Graphene Devices. Scientific Reports. 6: 26457. PMID 27279020 DOI: 10.1038/Srep26457  0.345
2016 Ahmed AS, Wen H, Ohta T, Pinchuk IV, Zhu T, Beechem T, Kawakami RK. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides Journal of Crystal Growth. 447: 5-12. DOI: 10.1016/J.Jcrysgro.2016.04.057  0.453
2015 Peters DW, Davids PS, Kim JK, Beechem TE, Howell SW, Leonhardt D, Ohta T, Wendt JR, Montoya JA. Plasmonic nanoantennas for enhanced midwave and longwave infrared imaging Proceedings of Spie - the International Society For Optical Engineering. 9467. DOI: 10.1117/12.2177440  0.363
2014 Lin YC, Chang CY, Ghosh RK, Li J, Zhu H, Addou R, Diaconescu B, Ohta T, Peng X, Lu N, Kim MJ, Robinson JT, Wallace RM, Mayer TS, Datta S, et al. Atomically thin heterostructures based on single-layer tungsten diselenide and graphene. Nano Letters. 14: 6936-41. PMID 25383798 DOI: 10.1021/Nl503144A  0.503
2014 Stevenson KJ, Veneman PA, Gearba RI, Mueller KM, Holliday BJ, Ohta T, Chan CK. Controlled covalent modification of epitaxial single layer graphene on 6H-SiC (0001) with aryliodonium salts using electrochemical methods. Faraday Discussions. 172: 273-91. PMID 25301546 DOI: 10.1039/C4Fd00038B  0.394
2014 Beechem TE, Ohta T, Diaconescu B, Robinson JT. Rotational disorder in twisted bilayer graphene. Acs Nano. 8: 1655-63. PMID 24460413 DOI: 10.1021/Nn405999Z  0.4
2014 Peters DW, Davids PS, Kim JK, Leonhardt D, Beechem TE, Howell SW, Ohta T, Wendt JR, Montoya JA. Application of plasmonic subwavelength structuring to enhance infrared detection Proceedings of Spie - the International Society For Optical Engineering. 8994. DOI: 10.1117/12.2040727  0.332
2013 Poumirol JM, Yu W, Chen X, Berger C, de Heer WA, Smith ML, Ohta T, Pan W, Goerbig MO, Smirnov D, Jiang Z. Magnetoplasmons in quasineutral epitaxial graphene nanoribbons. Physical Review Letters. 110: 246803. PMID 25165953 DOI: 10.1103/Physrevlett.110.246803  0.391
2013 Robinson JT, Schmucker SW, Diaconescu CB, Long JP, Culbertson JC, Ohta T, Friedman AL, Beechem TE. Electronic hybridization of large-area stacked graphene films. Acs Nano. 7: 637-44. PMID 23240977 DOI: 10.1021/Nn304834P  0.484
2013 Mann J, Sun D, Ma Q, Chen JR, Preciado E, Ohta T, Diaconescu B, Yamaguchi K, Tran T, Wurch M, Magnone K, Heinz TF, Kellogg GL, Kawakami R, Bartels L. Facile growth of monolayer MoS2 film areas on SiO2 European Physical Journal B. 86. DOI: 10.1140/Epjb/E2013-31011-Y  0.395
2013 Feenstra RM, Srivastava N, Gao Q, Widom M, Diaconescu B, Ohta T, Kellogg GL, Robinson JT, Vlassiouk IV. Low-energy electron reflectivity from graphene Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.041406  0.436
2013 Chan CK, Beechem TE, Ohta T, Brumbach MT, Wheeler DR, Stevenson KJ. Electrochemically driven covalent functionalization of graphene from fluorinated aryl iodonium salts Journal of Physical Chemistry C. 117: 12038-12044. DOI: 10.1021/Jp311519J  0.428
2012 Ohta T, Robinson JT, Feibelman PJ, Bostwick A, Rotenberg E, Beechem TE. Evidence for interlayer coupling and moiré periodic potentials in twisted bilayer graphene. Physical Review Letters. 109: 186807. PMID 23215315 DOI: 10.1103/Physrevlett.109.186807  0.416
2012 Ohta T, Beechem TE, Robinson JT, Kellogg GL. Long-range atomic ordering and variable interlayer interactions in two overlapping graphene lattices with stacking misorientations. Physical Review B. 85: 75415. DOI: 10.1103/Physrevb.85.075415  0.379
2012 Beechem T, Ohta T, McDonald A, Howell S, Robinson JT. Beyond Identification: Confocal Raman Spectroscopy and Imaging for Graphene Development Microscopy and Microanalysis. 18: 1960-1961. DOI: 10.1017/S1431927612011658  0.38
2011 Lee K, Kim S, Points MS, Beechem TE, Ohta T, Tutuc E. Magnetotransport properties of quasi-free-standing epitaxial graphene bilayer on SiC: evidence for Bernal stacking. Nano Letters. 11: 3624-8. PMID 21797267 DOI: 10.1021/Nl201430A  0.424
2011 Schmidt DA, Ohta T, Beechem TE. Strain and charge carrier coupling in epitaxial graphene Physical Review B. 84: 235422. DOI: 10.1103/Physrevb.84.235422  0.373
2011 Pan W, Ross AJ, Howell SW, Ohta T, Friedmann TA, Liang CT. Electron-electron interaction in high-quality epitaxial grapheme New Journal of Physics. 13. DOI: 10.1088/1367-2630/13/11/113005  0.42
2010 McChesney JL, Bostwick A, Ohta T, Seyller T, Horn K, González J, Rotenberg E. Extended van Hove singularity and superconducting instability in doped graphene. Physical Review Letters. 104: 136803. PMID 20481902 DOI: 10.1103/Physrevlett.104.136803  0.319
2010 Lovejoy TC, Yitamben EN, Ohta T, Fain SC, Ohuchi FS, Olmstead MA. One-dimensional electronic states in Ga2Se3 on Si(001):As Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.245313  0.571
2010 Ohta T, Bartelt NC, Nie S, Thürmer K, Kellogg GL. Role of carbon surface diffusion on the growth of epitaxial graphene on SiC Physical Review B. 81: 121411. DOI: 10.1103/Physrevb.81.121411  0.439
2010 Biedermann LB, Beechem TE, Ross AJ, Ohta T, Howell SW. Electrostatic transfer of patterned epitaxial graphene from SiC(0001̄) to glass New Journal of Physics. 12. DOI: 10.1088/1367-2630/12/12/125016  0.402
2010 Bostwick A, Ohta T, McChesney JL, Emtsev KV, Speck F, Seyller T, Horn K, Kevan SD, Rotenberg E. The interaction of quasi-particles in graphene with chemical dopants New Journal of Physics. 12. DOI: 10.1088/1367-2630/12/12/125014  0.42
2010 Pan W, Howell SW, Ross AJ, Ohta T, Friedmann TA. Observation of the integer quantum Hall effect in high quality, uniform wafer-scale epitaxial graphene films Applied Physics Letters. 97. DOI: 10.1063/1.3525588  0.469
2009 Emtsev KV, Bostwick A, Horn K, Jobst J, Kellogg GL, Ley L, McChesney JL, Ohta T, Reshanov SA, Röhrl J, Rotenberg E, Schmid AK, Waldmann D, Weber HB, Seyller T. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nature Materials. 8: 203-7. PMID 19202545 DOI: 10.1038/Nmat2382  0.476
2009 Bostwick A, McChesney J, Ohta T, Rotenberg E, Seyller T, Horn K. Experimental studies of the electronic structure of graphene Progress in Surface Science. 84: 380-413. DOI: 10.1016/J.Progsurf.2009.08.002  0.483
2008 Rotenberg E, Bostwick A, Ohta T, McChesney JL, Seyller T, Horn K. Origin of the energy bandgap in epitaxial graphene. Nature Materials. 7: 258-9; author reply . PMID 18354403 DOI: 10.1038/Nmat2154A  0.386
2008 Lu CY, Adams JA, Yu Q, Ohta T, Olmstead MA, Ohuchi FS. Heteroepitaxial growth of the intrinsic vacancy semiconductor Al2 Se3 on Si(111): Initial structure and morphology Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.075321  0.652
2008 Starowicz P, Liu C, Khasanov R, Kondo T, Samolyuk G, Gardenghi D, Lee Y, Ohta T, Harmon B, Canfield P, Bud'Ko S, Rotenberg E, Kaminski A. Direct observation of a Fermi surface and superconducting gap in LuNi2B2C Physical Review B. 77: 134520. DOI: 10.1103/Physrevb.77.134520  0.318
2008 Ohta T, El Gabaly F, Bostwick A, McChesney JL, Emtsev KV, Schmid AK, Seyller T, Horn K, Rotenberg E. Morphology of graphene thin film growth on SiC(0001) New Journal of Physics. 10. DOI: 10.1088/1367-2630/10/2/023034  0.496
2008 Bostwick A, Emtsev KV, Horn K, Huwald E, Ley L, McChesney JL, Ohta T, Riley J, Rotenberg E, Speck F, Seyller T. Photoemission studies of graphene on SiC: Growth, interface, and electronic structure Advances in Solid State Physics. 47: 159-170. DOI: 10.1007/978-3-540-74325-5_13  0.411
2008 Seyller T, Bostwick A, Emtsev KV, Horn K, Ley L, McChesney JL, Ohta T, Riley JD, Rotenberg E, Speck F. Epitaxial graphene : a new material Physica Status Solidi B-Basic Solid State Physics. 245: 1436-1446. DOI: 10.1002/Pssb.200844143  0.492
2007 Ohta T, Bostwick A, McChesney JL, Seyller T, Horn K, Rotenberg E. Interlayer interaction and electronic screening in multilayer graphene investigated with angle-resolved photoemission spectroscopy. Physical Review Letters. 98: 206802. PMID 17677726 DOI: 10.1103/Physrevlett.98.206802  0.468
2007 Kondo T, Khasanov R, Karpinski J, Kazakov SM, Zhigadlo ND, Ohta T, Fretwell HM, Palczewski AD, Koll JD, Mesot J, Rotenberg E, Keller H, Kaminski A. Dual character of the electronic structure of YBa2Cu4O8: the conduction bands of CuO2 planes and CuO chains. Physical Review Letters. 98: 157002. PMID 17501373 DOI: 10.1103/Physrevlett.98.157002  0.373
2007 Bostwick A, Ohta T, McChesney JL, Seyller T, Horn K, Rotenberg E. Band structure and many body effects in graphene European Physical Journal: Special Topics. 148: 5-13. DOI: 10.1140/Epjst/E2007-00220-X  0.448
2007 Bostwick A, Ohta T, McChesney JL, Emtsev KV, Seyller T, Horn K, Rotenberg E. Symmetry breaking in few layer graphene films New Journal of Physics. 9. DOI: 10.1088/1367-2630/9/10/385  0.432
2007 Brar VW, Zhang Y, Yayon Y, Ohta T, McChesney JL, Bostwick A, Rotenberg E, Horn K, Crommie MF. Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC Applied Physics Letters. 91. DOI: 10.1063/1.2771084  0.479
2007 Bostwick A, Ohta T, Seyller T, Horn K, Rotenberg E. Quasiparticle dynamics in graphene Nature Physics. 3: 36-40. DOI: 10.1038/Nphys477  0.421
2007 Bostwick A, Ohta T, McChesney JL, Seyller T, Horn K, Rotenberg E. Renormalization of graphene bands by many-body interactions Solid State Communications. 143: 63-71. DOI: 10.1016/J.Ssc.2007.04.034  0.441
2006 Ohta T, Bostwick A, Seyller T, Horn K, Rotenberg E. Controlling the electronic structure of bilayer graphene. Science (New York, N.Y.). 313: 951-4. PMID 16917057 DOI: 10.1126/Science.1130681  0.491
2006 Schmidt DA, Ohta T, Yu Q, Olmstead MA. Influence of perovskite termination on oxide heteroepitaxy Journal of Applied Physics. 99: 113521. DOI: 10.1063/1.2202197  0.357
2006 Schmidt DA, Ohta T, Lu CY, Bostwick AA, Yu Q, Rotenberg E, Ohuchi FS, Olmstead MA. Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si(001) Applied Physics Letters. 88. DOI: 10.1063/1.2199451  0.59
2006 Klust A, Yu Q, Olmstead MA, Ohta T, Ohuchi FS, Bierkandt M, Deiter C, Wollschläger J. Contrast in scanning probe microscopy images of ultrathin insulator films Applied Physics Letters. 88. DOI: 10.1063/1.2172397  0.564
2005 Ohta T, Schmidt DA, Meng S, Klust A, Bostwick A, Yu Q, Olmstead MA, Ohuchi FS. Intrinsic vacancy-induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001). Physical Review Letters. 94: 116102. PMID 15903873 DOI: 10.1103/Physrevlett.94.116102  0.562
2005 Klust A, Ohta T, Bostwick AA, Rotenberg E, Yu Q, Ohuchi FS, Olmstead MA. Electronic structure evolution during the growth of ultrathin insulator films on semiconductors: From interface formation to bulklike CaF2Si(111) films Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.205336  0.6
2005 Adams JA, Bostwick A, Ohta T, Ohuchi FS, Olmstead MA. Heterointerface formation of aluminum selenide with silicon: Electronic and atomic structure of Si(111):AlSe Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.195308  0.581
2004 Klust A, Ohta T, Bostwick AA, Yu Q, Ohuchi FS, Olmstead MA. Atomically resolved imaging of a CaF bilayer on Si(111): Subsurface atoms and the image contrast in scanning force microscopy Physical Review B - Condensed Matter and Materials Physics. 69: 354051-354055. DOI: 10.1103/Physrevb.69.035405  0.568
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