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Rashmi Jha - Publications

Affiliations: 
2008-2015 Engineering Science The University of Toledo 
 2015- University of Cincinnati, Cincinnati, OH 
Area:
Electronics and Electrical Engineering
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30 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Schultz T, Jha R, Casto M, Dupaix B. Vulnerabilities and Reliability of ReRAM Based PUFs and Memory Logic Ieee Transactions On Reliability. 69: 690-698. DOI: 10.1109/Tr.2019.2910793  0.429
2020 Jones A, Rush A, Merkel CE, Herrmann E, Jacob AP, Thiem C, Jha R. A neuromorphic SLAM architecture using gated-memristive synapses Neurocomputing. 381: 89-104. DOI: 10.1016/J.Neucom.2019.09.098  0.321
2019 Misra V, Jha R, Chen B, Lee J, Lee B. Feasibility of Dipole Based Work Function Tuning for Sub-1nm EOT Metal Gated High-K Stacks Ecs Transactions. 3: 275-287. DOI: 10.1149/1.2356287  0.494
2019 Manjunath VJ, Rush A, Barua A, Jha R. Effect of aluminum interfacial layer in a niobium oxide based resistive RAM Solid State Electronics Letters. 1: 52-57. DOI: 10.1016/J.Ssel.2019.09.001  0.46
2018 Ghosh S, Jha R, Iyengar A, Govindaraj R. Design Space Exploration for Selector Diode-STTRAM Crossbar Arrays Ieee Transactions On Magnetics. 54: 2810185. DOI: 10.1109/Tmag.2018.2810185  0.387
2018 Bailey TJ, Jha R. Understanding Synaptic Mechanisms in SrTiO 3 RRAM Devices Ieee Transactions On Electron Devices. 65: 3514-3520. DOI: 10.1109/Ted.2018.2847413  0.403
2018 Herrmann E, Rush A, Bailey T, Jha R. Gate Controlled Three-Terminal Metal Oxide Memristor Ieee Electron Device Letters. 39: 500-503. DOI: 10.1109/Led.2018.2806188  0.429
2018 Nguyen TH, Barua A, Bailey T, Rush A, Kosel P, Leedy K, Jha R. Reflection coefficient of HfO2-based RRAM in different resistance states Applied Physics Letters. 113: 192101. DOI: 10.1063/1.5034118  0.402
2016 Lu W, Chen W, Li Y, Jha R. Self Current Limiting MgO ReRAM Devices for Low-Power Non-Volatile Memory Applications Ieee Journal On Emerging and Selected Topics in Circuits and Systems. DOI: 10.1109/Jetcas.2016.2547758  0.426
2015 Li Y, Chen W, Lu W, Jha R. Read Challenges in Crossbar Memories With Nanoscale Bidirectional Diodes and ReRAM Devices Ieee Transactions On Nanotechnology. 14: 444-451. DOI: 10.1109/Tnano.2015.2403772  0.389
2015 Chen W, Lu W, Long B, Li Y, Gilmer D, Bersuker G, Bhunia S, Jha R. Switching characteristics of W/Zr/HfO2/TiN ReRAM devices for multi-level cell non-volatile memory applications Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/7/075002  0.695
2014 Mandal S, El-Amin A, Alexander K, Rajendran B, Jha R. Novel synaptic memory device for neuromorphic computing. Scientific Reports. 4: 5333. PMID 24939247 DOI: 10.1038/Srep05333  0.406
2014 Jha R, Mandal S. Nanoelectronic synaptic devices and materials for brain-inspired computational architectures Proceedings of Spie - the International Society For Optical Engineering. 9174. DOI: 10.1117/12.2065261  0.409
2013 Long B, Mandal S, Li Y, Chen W, El-Amin A, Jha R. Understanding the role of dopants in transition metal oxide dielectrics for digital and analog resistive switching Ecs Transactions. 53: 115-120. DOI: 10.1149/05304.0115ecst  0.411
2013 Mandal S, Long B, Jha R. Study of Synaptic Behavior in Doped Transition Metal Oxide-Based Reconfigurable Devices Ieee Transactions On Electron Devices. 60: 4219-4225. DOI: 10.1109/Ted.2013.2288327  0.669
2013 Long BM, Mandal S, Livecchi J, Jha R. Effects of Mg-doping on HfO2-based ReRAM device switching characteristics Ieee Electron Device Letters. 34: 1247-1249. DOI: 10.1109/Led.2013.2276482  0.687
2012 Long B, Li Y, Jha R. Switching Characteristics of RRAM Devices for Digital and Analog Nonvolatile Memory Applications Ieee Electron Device Letters. 33: 706-708. DOI: 10.1109/Led.2012.2188775  0.67
2012 Jha R, Long B. Understanding the switching mechanism in transition metal oxide based ReRAM devices Proceedings - 2012 Ieee Computer Society Annual Symposium On Vlsi, Isvlsi 2012. 73-77. DOI: 10.1109/ISVLSI.2012.53  0.382
2012 Long B, Li Y, Mandal S, Jha R, Leedy K. Switching dynamics and charge transport studies of resistive random access memory devices Applied Physics Letters. 101: 113503. DOI: 10.1063/1.4749809  0.687
2012 Chowdhury M, Long B, Jha R, Devabhaktuni V. A fundamental understanding of nickel oxide based resistive random access memory with high percentage of oxygen Solid-State Electronics. 68: 1-3. DOI: 10.1016/J.Sse.2011.11.025  0.45
2011 Long B, Li Y, Jha R. Understanding the Role of Process Parameters on the Characteristics of Transition Metal Oxide RRAM/Memristor Devices Mrs Proceedings. 1337. DOI: 10.1557/Opl.2011.983  0.702
2011 Long B, Ordosgoitti J, Jha R, Melkonian C. Understanding the Charge Transport Mechanism in VRS and BRS States of Transition Metal Oxide Nanoelectronic Memristor Devices Ieee Transactions On Electron Devices. 58: 3912-3919. DOI: 10.1109/Ted.2011.2165845  0.701
2009 Kim YH, Schonenberg K, Ando T, Neumayer D, Mo R, Bu H, Sleight J, Cartier E, Moumen N, Jha R, Yan W, Liang Y, Narayanan V, Chudzik MP, Guha S. Novel Single Metal Gate CMOS Integration with Effective Workfunction Modulation by a Differential Spacer: Manipulation of Oxygen Vacancy The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.C-6-3  0.383
2006 Jha R, Chung J, Chen B, Nemanich R, Misra V. A Systematic Approach of Understanding and Retaining Pmos Compatible Work Function of Metal Electrodes On HfO2 Gate Dielectrics Mrs Proceedings. 917. DOI: 10.1557/Proc-0917-E04-05  0.671
2006 Lichtenwalner DJ, Jur JS, Jha R, Inoue N, Chen B, Misra V, Kingon AI. High-Temperature Stability of Lanthanum Silicate Gate Dielectric MIS Devices with Ta and TaN Electrodes Journal of the Electrochemical Society. 153: F210. DOI: 10.1149/1.2218757  0.693
2006 Chen B, Jha R, Misra V. Work Function Tuning Via Interface Dipole by Ultrathin Reaction Layers Using AlTa and AlTaN Alloys Ieee Electron Device Letters. 27: 731-733. DOI: 10.1109/Led.2006.880643  0.661
2006 Chen B, Jha R, Lazar H, Biswas N, Lee J, Lee B, Wielunski L, Garfunkel E, Misra V. Influence of oxygen diffusion through capping layers of low work function metal gate electrodes Ieee Electron Device Letters. 27: 228-230. DOI: 10.1109/Led.2006.871184  0.66
2005 Jha R, Lee J, Majhi P, Misra V. Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications Applied Physics Letters. 87: 223503. DOI: 10.1063/1.2136425  0.626
2004 Jha R, Gurganos J, Kim YH, Choi R, Lee J, Misra V. A capacitance-based methodology for work function extraction of metals on high-/spl kappa/ Ieee Electron Device Letters. 25: 420-423. DOI: 10.1109/Led.2004.829032  0.594
2004 Kim YH, Choi R, Jha R, Lee JH, Misra V, Lee JC. Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure. Microelectronics Reliability. 44: 1513-1518. DOI: 10.1016/J.Microrel.2004.07.049  0.477
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