| Year |
Citation |
Score |
| 2020 |
Zhang B, Song W, Brown J, Nemanich RJ, Lindsay S. Electronic Conductance Resonance in non-Redox Proteins. Journal of the American Chemical Society. PMID 32176496 DOI: 10.1021/Jacs.0C01805 |
0.603 |
|
| 2019 |
Cho J, Nemanich RJ. Surface electronic states and stability of the H-terminated Si(100) 1 x 1 surface produced by low-temperature H-plasma exposure. Physical Review. B, Condensed Matter. 46: 15212-15217. PMID 10003637 DOI: 10.1103/Physrevb.46.15212 |
0.372 |
|
| 2019 |
Cho J, Nemanich RJ. Surface electronic states of low-temperature H-plasma-exposed Ge(100). Physical Review. B, Condensed Matter. 46: 12421-12426. PMID 10003158 DOI: 10.1103/Physrevb.46.12421 |
0.38 |
|
| 2018 |
Geis MW, Fedynyshyn TH, Plaut ME, Wade TC, Wuorio CH, Vitale SA, Varghese JO, Grotjohn TA, Nemanich R, Hollis MA. Chemical and semiconducting properties of NO2-activated H-terminated diamond Diamond and Related Materials. 84: 86-94. DOI: 10.1016/J.Diamond.2018.03.002 |
0.361 |
|
| 2017 |
Cheng Q, Benipal MK, Liu Q, Wang X, Crozier PAA, Chan CK, Nemanich RJ. Al2O3 and SiO2 Atomic-Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms. Acs Applied Materials & Interfaces. PMID 28441470 DOI: 10.1021/Acsami.7B01274 |
0.302 |
|
| 2017 |
Wade T, Geis MW, Fedynyshyn TH, Vitale SA, Varghese JO, Lennon DM, Grotjohn TA, Nemanich R, Hollis MA. Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance Diamond and Related Materials. 76: 79-85. DOI: 10.1016/J.Diamond.2017.04.012 |
0.321 |
|
| 2015 |
Yang Y, Sun T, Shammas J, Kaur M, Hao M, Nemanich RJ. Electron affinity of cubic boron nitride terminated with vanadium oxide Journal of Applied Physics. 118: 165310. DOI: 10.1063/1.4934508 |
0.574 |
|
| 2014 |
Pang P, Ashcroft BA, Song W, Zhang P, Biswas S, Qing Q, Yang J, Nemanich RJ, Bai J, Smith JT, Reuter K, Balagurusamy VS, Astier Y, Stolovitzky G, Lindsay S. Fixed-gap tunnel junction for reading DNA nucleotides. Acs Nano. 8: 11994-2003. PMID 25380505 DOI: 10.1021/Nn505356G |
0.442 |
|
| 2014 |
Yang J, Eller BS, Kaur M, Nemanich RJ. Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 32: 021514. DOI: 10.1116/1.4866378 |
0.54 |
|
| 2014 |
Sun T, Koeck FAM, Rezikyan A, Treacy MMJ, Nemanich RJ. Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates Physical Review B. 90. DOI: 10.1103/Physrevb.90.121302 |
0.579 |
|
| 2014 |
Yang J, Eller BS, Nemanich RJ. Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride Journal of Applied Physics. 116: 123702. DOI: 10.1063/1.4895985 |
0.499 |
|
| 2014 |
Eller BS, Yang J, Nemanich RJ. Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States Journal of Electronic Materials. 43: 4560-4568. DOI: 10.1007/S11664-014-3383-Z |
0.488 |
|
| 2013 |
Eller BS, Yang J, Nemanich RJ. Electronic surface and dielectric interface states on GaN and AlGaN Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 050807. DOI: 10.1116/1.4807904 |
0.461 |
|
| 2013 |
Zeman MC, Nemanich RJ, Sunda-Meya A. Dynamics of dysprosium silicide nanostructures on Si(001) and (111) surfaces Journal of Materials Science. 49: 1812-1823. DOI: 10.1007/S10853-013-7869-5 |
0.43 |
|
| 2012 |
Liu X, Zhu C, Eller BS, Sun T, Jezewski CJ, King SW, Nemanich RJ. Cu film thermal stability on plasma cleaned polycrystalline Ru Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 052203. DOI: 10.1116/1.4742906 |
0.66 |
|
| 2012 |
Yang J, Eller BS, Zhu C, England C, Nemanich RJ. Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride Journal of Applied Physics. 112: 053710. DOI: 10.1063/1.4749268 |
0.675 |
|
| 2012 |
Rezikyan A, Treacy M, Sun T, Koeck FAM, Nemanich R. TEM observation of nitrogen-doped diamond films. Microscopy and Microanalysis. 18: 1558-1559. DOI: 10.1017/S1431927612009646 |
0.589 |
|
| 2010 |
Tedesco JL, Rowe JE, Nemanich RJ. Titanium silicide islands on atomically clean Si(100): Identifying single electron tunneling effects Journal of Applied Physics. 107: 123715. DOI: 10.1063/1.3437049 |
0.404 |
|
| 2009 |
Tedesco JL, Rowe JE, Nemanich RJ. Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si(111) and Si(100) Journal of Applied Physics. 105: 083721. DOI: 10.1063/1.3100212 |
0.43 |
|
| 2008 |
Kong X, Rowe JE, Nemanich RJ. Single molecule measurements with photoelectron emission microscopy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26: 1461. DOI: 10.1116/1.2932094 |
0.325 |
|
| 2008 |
Kulkarni P, Porter LM, Koeck FAM, Tang YJ, Nemanich RJ. Electrical and photoelectrical characterization of undoped and S-doped nanocrystalline diamond films Journal of Applied Physics. 103. DOI: 10.1063/1.2908884 |
0.437 |
|
| 2008 |
King SW, Davis RF, Nemanich R. Kinetics of Ga and In desorption from (7 × 7) Si(1 1 1) and (3 × 3) 6H-SiC(0 0 0 1) surfaces Surface Science. 602: 405-415. DOI: 10.1016/J.Susc.2007.10.034 |
0.349 |
|
| 2006 |
Jha R, Chung J, Chen B, Nemanich R, Misra V. A Systematic Approach of Understanding and Retaining Pmos Compatible Work Function of Metal Electrodes On HfO2 Gate Dielectrics Mrs Proceedings. 917. DOI: 10.1557/Proc-0917-E04-05 |
0.374 |
|
| 2005 |
Castro-Colin M, Donner W, Moss SC, Islam Z, Sinha SK, Nemanich R. Synchrotron x-ray studies of vitreousSiO2over Si(001). II. Crystalline contribution Physical Review B. 71. DOI: 10.1103/Physrevb.71.045311 |
0.407 |
|
| 2005 |
Castro-Colin M, Donner W, Moss SC, Islam Z, Sinha SK, Nemanich R, Metzger HT, Bösecke P, Shülli T. Synchrotron x-ray studies of vitreous SiO 2 over Si(001). I. Anisotropic glass contribution Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.045310 |
0.419 |
|
| 2005 |
Coppa BJ, Fulton CC, Kiesel SM, Davis RF, Pandarinath C, Burnette JE, Nemanich RJ, Smith DJ. Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n -type ZnO{0001} surfaces Journal of Applied Physics. 97. DOI: 10.1063/1.1898436 |
0.406 |
|
| 2005 |
Lucovsky G, Fulton CC, Zhang Y, Luning J, Edge L, Whitten JL, Nemanich RJ, Schlom DG, Afanase'V VV. Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings Thin Solid Films. 486: 129-135. DOI: 10.1016/J.Tsf.2004.11.233 |
0.321 |
|
| 2005 |
Fulton CC, Lucovsky G, Zhang Y, Zou Y, Nemanich RJ, Ade H, Whitten JL. Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)x(TiOx)1-x and other complex oxides Journal of Electron Spectroscopy and Related Phenomena. 144: 913-916. DOI: 10.1016/J.Elspec.2005.01.098 |
0.306 |
|
| 2004 |
Fulton CC, Cook TE, Lucovsky G, Nemanich RJ. Interface instabilities and electronic properties of ZrO 2 on silicon (100) Journal of Applied Physics. 96: 2665-2673. DOI: 10.1063/1.1776313 |
0.468 |
|
| 2004 |
Yang WC, Ade H, Nemanich RJ. Shape stability of TiSi2 islands on Si (111) Journal of Applied Physics. 95: 1572-1576. DOI: 10.1063/1.1636526 |
0.361 |
|
| 2004 |
Lucovsky G, Hong JG, Fulton CC, Zou Y, Nemanich RJ, Ade H, Scholm DG, Freeouf JL. Spectroscopic studies of metal high-k dielectrics: Transition metal oxides and silicates, and complex rare earth/transition metal oxides Physica Status Solidi (B) Basic Research. 241: 2221-2235. DOI: 10.1002/Pssb.200404938 |
0.322 |
|
| 2003 |
Yang WC, Zeman M, Ade H, Nemanich RJ. Attractive migration and coalescence: a significant process in the coarsening of TiSi2 islands on the Si(111) surface. Physical Review Letters. 90: 136102. PMID 12689311 DOI: 10.1103/Physrevlett.90.136102 |
0.368 |
|
| 2003 |
Park M, Sakhrani V, Maria JP, Cuomo JJ, Teng CW, Muth JF, Ware ME, Rodriguez BJ, Nemanich RJ. Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation Journal of Materials Research. 18: 768-771. DOI: 10.1557/Jmr.2003.0106 |
0.378 |
|
| 2003 |
Hartman JD, Roskowski AM, Reitmeier ZJ, Tracy KM, Davis RF, Nemanich RJ. Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AIN films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 394-400. DOI: 10.1116/1.1539080 |
0.329 |
|
| 2003 |
Tracy KM, Hartlieb PJ, Einfeldt S, Davis RF, Hurt EH, Nemanich R. Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag Journal of Applied Physics. 94: 3939-3948. DOI: 10.1063/1.1598630 |
0.357 |
|
| 2003 |
Cook TE, Fulton CC, Mecouch WJ, Tracy KM, Davis RF, Hurt EH, Lucovsky G, Nemanich RJ. Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001) Journal of Applied Physics. 93: 3995-4004. DOI: 10.1063/1.1559424 |
0.448 |
|
| 2002 |
Park M, Carlson E, Chang YC, Muth JF, Bumgarner J, Kolbas RM, Cuomo JJ, Nemanich RJ. Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy Materials Research Society Symposium - Proceedings. 743: 323-328. DOI: 10.1557/Proc-743-L4.12 |
0.395 |
|
| 2002 |
Fulton CC, Lucovsky G, Nemanich RJ. Electronic states at the interface of Ti-Si oxide on Si(100) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1726-1731. DOI: 10.1116/1.1493785 |
0.415 |
|
| 2002 |
Preble EA, Tracy KM, Kiesel S, Mclean H, Miraglia PQ, Nemanich R, Davis RF, Albrecht M, Smith D. Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films Journal of Applied Physics. 91: 2133-2137. DOI: 10.1063/1.1432127 |
0.405 |
|
| 2002 |
Hartlieb PJ, Roskowski A, Davis RF, Platow W, Nemanich R. Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces Journal of Applied Physics. 91: 732-738. DOI: 10.1063/1.1424060 |
0.371 |
|
| 2001 |
Rodriguez BJ, Kim DJ, Kingon AI, Nemanich R. Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy Mrs Proceedings. 693: 571-576. DOI: 10.1557/Proc-693-I9.9.1 |
0.388 |
|
| 2001 |
Hurt E, Cook TE, Tracy K, Davis R, Lucovsky G, Nemanich R. Measurements of the Band Offset of SiO2 on Clean GaN Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I9.10.1 |
0.48 |
|
| 2001 |
Sunda-Meya A, Gracin D, Dutta J, Vlahovic B, Nemanich R. CW Argon-ion Laser Crystallization of a-Si:H Thin Films Mrs Proceedings. 664. DOI: 10.1557/Proc-664-A6.9 |
0.334 |
|
| 2000 |
Köck F, Garguilo J, Brown B, Nemanich R. Thermionic FEEM, PEEM and I/V Measurements of N-Doped CVD Diamond Surfaces Mrs Proceedings. 621. DOI: 10.1557/Proc-621-R6.5.1 |
0.352 |
|
| 1999 |
Porto AO, Boyanov BI, Sayers DE, Nemanich RJ. Cobalt silicide formation on 6H silicon carbide. Journal of Synchrotron Radiation. 6: 188-9. PMID 15263243 DOI: 10.1107/S0909049599001326 |
0.308 |
|
| 1999 |
Oh J, Ham H, Laloli P, Nemanich R. Electrical Properties of Nanoscale Tisi2 Islands on Si Mrs Proceedings. 583: 111-116. DOI: 10.1557/Proc-583-111 |
0.342 |
|
| 1999 |
Jung B, Kim YD, Yang W, Nemanich R, Jeon H. Reduction of The Phase Transition Temperature of TiSi 2 on Si(111) Using a Ta Interlayer Mrs Proceedings. 564: 59-64. DOI: 10.1557/Proc-564-59 |
0.317 |
|
| 1999 |
Sowers AT, Ward BL, English SL, Nemanich R. Field emission properties of nitrogen-doped diamond films Journal of Applied Physics. 86: 3973-3982. DOI: 10.1063/1.371316 |
0.385 |
|
| 1998 |
Yang W, Ade H, Nemanich R. Real-time observation of Ti silicide epitaxial islands growth with the photoelectron emission microscopy Mrs Proceedings. 533: 197-202. DOI: 10.1557/Proc-533-197 |
0.305 |
|
| 1998 |
Maillard-Schaller E, Boyanov BI, English S, Nemanich R. Morphology of NISI Film on Si(100): Role of the Interface Strain Mrs Proceedings. 514: 185-189. DOI: 10.1557/Proc-514-185 |
0.377 |
|
| 1998 |
Boyanov BI, Goeller PT, Sayers DE, Nemanich R. Thickness Effects in the Reaction of Cobalt with Slicon-Germanium Alloys Mrs Proceedings. 514: 165-170. DOI: 10.1557/Proc-514-165 |
0.418 |
|
| 1998 |
Sowers AT, Ward BL, Nemanich R. Relationship of Field Emission Characteristics on Process Gas Nitrogen Content in Nitrogen Doped Diamond Films Mrs Proceedings. 509: 191-196. DOI: 10.1557/Proc-509-95 |
0.321 |
|
| 1998 |
Christman JA, Woolcott RR, Kingon AI, Nemanich R. Piezoelectric measurements with atomic force microscopy Applied Physics Letters. 73: 3851-3853. DOI: 10.1063/1.122914 |
0.349 |
|
| 1998 |
Nemanich RJ, Baumann PK, Benjamin MC, Nam OH, Sowers AT, Ward BL, Ade H, Davis RF. Electron emission properties of crystalline diamond and III-nitride surfaces Applied Surface Science. 130: 694-703. DOI: 10.1016/S0169-4332(98)00140-8 |
0.366 |
|
| 1997 |
Carter RJ, Bergman EJ, Lee DR, Owyang J, Nemanich R. AFM analysis of HF vapor cleaned SiO 2 surfaces Mrs Proceedings. 477: 481-486. DOI: 10.1557/Proc-477-481 |
0.345 |
|
| 1997 |
Balkas CM, Sitar Z, Zheleva T, Bergman L, Muth JF, Shmagin IK, Kolbas R, Nemanich R, Davis RF. Growth of bulk AlN and GaN single crystals by sublimation Materials Research Society Symposium - Proceedings. 449: 41-46. DOI: 10.1557/Proc-449-41 |
0.317 |
|
| 1997 |
Wang Z, Aldrich DB, Nemanich R, Sayers DE. Electrical And Structural Properties Of Zirconium Germanosilicide Formed By A Bilayer Solid State Reaction Of Zr With Strained Si1-Xgex Alloys Journal of Applied Physics. 82: 2342-2348. DOI: 10.1063/1.366043 |
0.369 |
|
| 1997 |
Wang Z, Goeller PT, Boyanov BI, Sayers DE, Nemanich R. An lntegrated Growth and Analysis System for In-Situ XAS Studies of Metal- Semiconductor Interactions Journal De Physique Iv. 7. DOI: 10.1051/Jp4/1997096 |
0.437 |
|
| 1997 |
Baumann PK, Bozeman SP, Ward BL, Nemanich R. Characterization of metal-diamond interfaces: Electron affinity and Schottky barrier height Diamond and Related Materials. 6: 398-402. DOI: 10.1016/S0925-9635(96)00601-2 |
0.376 |
|
| 1997 |
Balkaş CM, Sitar Z, Zheleva T, Bergman L, Nemanich R, Davis RF. Sublimation growth and characterization of bulk aluminum nitride single crystals Journal of Crystal Growth. 179: 363-370. DOI: 10.1016/S0022-0248(97)00160-7 |
0.366 |
|
| 1996 |
Ku JH, Nemanich R. Surface Electronic Structure Of Clean And Hydrogen-Chemisorbed Sixge1-X Alloy Surfaces Physical Review B. 54: 14102-14110. PMID 9985333 DOI: 10.1103/Physrevb.54.14102 |
0.326 |
|
| 1996 |
Srinivasan E, Ellis SJ, Nemanich R, Parsons GN. Large Crystallite Polysilicon Deposited Using Pulsed-Gas PECVD at Temperatures Less Than 250°C Mrs Proceedings. 452: 989-994. DOI: 10.1557/Proc-452-989 |
0.348 |
|
| 1996 |
Yang W, Jedema FJ, Ade H, Nemanich R. Surface Morphology of Nanoscale TiSi 2 Epitaxial Islands on Si(00l) Mrs Proceedings. 448: 223-228. DOI: 10.1557/Proc-448-223 |
0.388 |
|
| 1996 |
Baumann PK, Bozeman SP, Ward BL, Nemanich R. Characterization of zirconium-diamond interfaces Mrs Proceedings. 423: 143-148. DOI: 10.1557/Proc-423-143 |
0.327 |
|
| 1996 |
Ku JH, Nemanich R. Hydrogen evolution from strained SixGe1−x(100)2×1:H surfaces Journal of Applied Physics. 80: 4715-4721. DOI: 10.1063/1.363426 |
0.405 |
|
| 1996 |
Benjamin MC, Bremser MD, Weeks TW, King SW, Davis RF, Nemanich R. UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC Applied Surface Science. 455-460. DOI: 10.1016/S0169-4332(96)00186-9 |
0.423 |
|
| 1996 |
Ku JH, Nemanich RJ. The Schottky barrier of Co on strained and unstrained SixGe1-x alloys Applied Surface Science. 104: 262-266. DOI: 10.1016/S0169-4332(96)00155-9 |
0.347 |
|
| 1995 |
Nemanich R, Benjamin MC, Bozeman SP, Bremser MD, King SW, Ward BL, Davis RF, Chen B, Zhang Z, Bernholc J. Negative) Electron Affinity of AlN and AlGaN Alloys Mrs Proceedings. 395: 777-788. DOI: 10.1557/Proc-395-777 |
0.385 |
|
| 1995 |
Barnak JP, King S, Montgomery J, Ku JH, Nemanich R. Removal of fluorine from a Si (100) surface by a remote RF hydrogen plasma Mrs Proceedings. 386: 357-362. DOI: 10.1557/Proc-386-357 |
0.353 |
|
| 1995 |
Barnak JP, Ying H, Chen YL, Montgomery J, Nemanich R. Removal of SiO 2 from Si (100) by remote H 2/SiH 4 plasma prior to epitaxial growth Mrs Proceedings. 386: 351-356. DOI: 10.1557/Proc-386-351 |
0.353 |
|
| 1995 |
Ying H, Barnak JP, Chen YL, Nemanich R. RIE passivation layer removal by remote H-plasma and H 2/SiH 4 plasma processing Mrs Proceedings. 386: 285-290. DOI: 10.1557/Proc-386-285 |
0.346 |
|
| 1995 |
Montgomery JS, Barnak JP, Silvestre C, Hauser JR, Nemanich RJ. Correlation of roughness and device properties for hydrogen plasma cleaning of Si(100) prior to gate oxidation Materials Research Society Symposium - Proceedings. 386: 279-284. DOI: 10.1557/Proc-386-279 |
0.345 |
|
| 1995 |
Shen TD, Koch CC, McCormick TL, Nemanich RJ, Huang JY, Huang JG. The structure and property characteristics of amorphous/nanocrystalline silicon produced by ball milling Journal of Materials Research. 10: 139-148. DOI: 10.1557/Jmr.1995.0139 |
0.415 |
|
| 1995 |
Baumann PK, Nemanich RJ. Negative electron affinity effects on H plasma exposed diamond (100) surfaces Diamond and Related Materials. 4: 802-805. DOI: 10.1016/0925-9635(94)05228-X |
0.351 |
|
| 1995 |
Dao Y, Edwards AM, Nemanich RJ, Sayers DE. Local structural studies of (Ti1-xZrx)Si2 thin films on Si(111) Physica B: Physics of Condensed Matter. 208: 513-514. DOI: 10.1016/0921-4526(94)00738-H |
0.448 |
|
| 1994 |
Aldrich DB, Nemanich RJ, Sayers DE. Bond-length relaxation in Si1-xGex alloys. Physical Review. B, Condensed Matter. 50: 15026-15033. PMID 9975851 DOI: 10.1103/Physrevb.50.15026 |
0.318 |
|
| 1994 |
Benjamin MC, Wang C, Kern RS, Davis RF, Nemanich R. Properties of the Heteroepitaxial AIN/SiC Interface Mrs Proceedings. 339: 81-88. DOI: 10.1557/Proc-339-81 |
0.391 |
|
| 1994 |
Baumann PK, Humphreys TP, Nemanich R. Comparison of Surface Cleaning Processes for Diamond C(001) Mrs Proceedings. 339: 69-74. DOI: 10.1557/Proc-339-69 |
0.425 |
|
| 1994 |
Bergman L, McClure MT, Glass JT, Nemanich RJ. Recombination processes of the broadband and 1.681 eV optical centers in diamond films Materials Research Society Symposium - Proceedings. 339: 663-668. DOI: 10.1557/Proc-339-663 |
0.37 |
|
| 1994 |
Sukow CA, Nemanich R. Erratum: “Morphology of TiSi2 and ZrSi2 on Si(100) and (111) surfaces” [J. Mater. Res. 9, 1214–1227 (1994)] Journal of Materials Research. 9: 2198-2198. DOI: 10.1557/Jmr.1994.2198 |
0.325 |
|
| 1994 |
Sukow CA, Nemanich R. Morphology of TiSi2 and ZrSi2 on Si(100) and (111) surfaces Journal of Materials Research. 9: 1214-1227. DOI: 10.1557/Jmr.1994.1214 |
0.442 |
|
| 1994 |
Bergman L, McClure MT, Glass JT, Nemanich RJ. The origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films Journal of Applied Physics. 76: 3020-3027. DOI: 10.1063/1.357508 |
0.402 |
|
| 1994 |
Edwards AM, Dao Y, Nemanich RJ, Sayers DE, Kemner KM. Structural investigation of the initial interface region formed by thin zirconium films on silicon (111) Journal of Applied Physics. 76: 4630-4635. DOI: 10.1063/1.357299 |
0.434 |
|
| 1994 |
Dao Y, Edwards AM, Ying H, Chen YL, Sayers DE, Nemanich RJ. Structural and electrical properties of (Ti0.9Zr 0.1)Si2 thin films on Si(111) Applied Physics Letters. 65: 2413-2415. DOI: 10.1063/1.112692 |
0.44 |
|
| 1994 |
Baumann PK, Humphreys TP, Nemanich RJ, Ishibashi K, Parikh NR, Porter LM, Davis RF. Epitaxial Cu contacts on semiconducting diamond Diamond and Related Materials. 3: 883-886. DOI: 10.1016/0925-9635(94)90292-5 |
0.418 |
|
| 1993 |
Dao Y, Edwards AM, Sayers DE, Nemanich R. Local Structural Studies of TiSi2 and ZrSi2 Thin Films on Si(111) Surfaces Mrs Proceedings. 320: 367-372. DOI: 10.1557/Proc-320-362 |
0.416 |
|
| 1993 |
Liu HX, Schneider TP, Montgomery J, Chen YL, Buczkowski A, Shimura F, Nemanich R, Maher DM, Korzec D, Engemann J. A Study of Surface and Subsurface Properties of Si (100) After Hydrogen ion-Beam Exposure Mrs Proceedings. 315: 231-236. DOI: 10.1557/Proc-315-231 |
0.315 |
|
| 1993 |
Schneider TP, Cho J, Chen YL, Maher DM, Nemanich R. Plasma Surface Interactions and Surface Properties for Remote H-Plasma Cleaning of Si(100) Mrs Proceedings. 315: 197-209. DOI: 10.1557/Proc-315-197 |
0.34 |
|
| 1993 |
Jeon H, Cho YS, Kang EY, Park JW, Nemanich R. Phase Transition and Formation of TiSi 2 Codeposited on Atomically Clean Si(111). Mrs Proceedings. 311: 275-280. DOI: 10.1557/Proc-311-275 |
0.322 |
|
| 1992 |
Kropman BL, Sukow CA, Nemanich R. Surface and interface morphology of small islands of TiSi2 and ZrSi2 on (001) silicon Mrs Proceedings. 280: 589-592. DOI: 10.1557/Proc-280-589 |
0.365 |
|
| 1992 |
Sukow CA, Nemanich RJ. Comparison of the Interface and Surface Morphologies of Zirconium and Titanium Silicides on Silicon Mrs Proceedings. 260. DOI: 10.1557/PROC-260-251 |
0.306 |
|
| 1992 |
Chen YL, Wang C, Lucovsky G, Maher DM, Nemanich RJ. Transmission electron microscopy and vibrational spectroscopy studies of undoped and doped Si,H and Si,C:H films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 874-880. DOI: 10.1116/1.577687 |
0.439 |
|
| 1992 |
Wang XH, Ma GHM, Zhu W, Glass JT, Bergman L, Turner KF, Nemanich RJ. Effects of boron doping on the surface morphology and structural imperfections of diamond films Diamond and Related Materials. 1: 828-835. DOI: 10.1016/0925-9635(92)90109-2 |
0.435 |
|
| 1991 |
Humphreys TP, LaBrasca JV, Nemanich R, Das K, Posthill JB. High Temperature Rectifying Contacts Using Heteroepitaxial Ni Films on Semiconducting Diamond Japanese Journal of Applied Physics. 30: 1409-1411. DOI: 10.1143/Jjap.30.L1409 |
0.406 |
|
| 1991 |
Wang C, Lucovsky G, Nemanich R. Deposition and characterization of amorphous and micro-crystalline Si,C alloy thin films by a remote plasma-enhanced chemical-vapor deposition process : RPECVD Journal of Non-Crystalline Solids. 741-744. DOI: 10.1016/S0022-3093(05)80227-3 |
0.382 |
|
| 1991 |
VanderWeide J, Nemanich R. Interface Reactions of Titanium on Single Crystal and Thin Film Diamond Analyzed by UV Photoemission Spectroscopy Materials Science Monographs. 73: 359-364. DOI: 10.1016/B978-0-444-89162-4.50057-9 |
0.425 |
|
| 1991 |
Humphreys TP, Jeon H, Labrasca JV, Turner KF, Nemanich R, Das K, Posthill JB. Characterization of Titanium Silicide Contacts Deposited on Semiconducting Diamond Substrates Materials Science Monographs. 73: 353-358. DOI: 10.1016/B978-0-444-89162-4.50056-7 |
0.431 |
|
| 1990 |
Esser A, Seibert K, Kurz H, Parsons GN, Wang C, Davidson BN, Lucovsky G, Nemanich RJ. Ultrafast recombination and trapping in amorphous silicon. Physical Review. B, Condensed Matter. 41: 2879-2884. PMID 9994054 DOI: 10.1016/0022-3093(89)90654-6 |
0.386 |
|
| 1990 |
Campbell IH, Fauchet PM, Lyon SA, Nemanich RJ. Photoluminescence above the Tauc gap in a-Si:H Physical Review B. 41: 9871-9879. DOI: 10.1103/Physrevb.41.9871 |
0.375 |
|
| 1990 |
Lee YH, Bachmann KJ, Glass JT, LeGrice YM, Nemanich RJ. Vapor deposition of diamond thin films on various substrates Applied Physics Letters. 57: 1916-1918. DOI: 10.1063/1.104011 |
0.449 |
|
| 1990 |
Humphreys TP, Nemanich R, Das K, Parikh NR, Posthill JB. Photoluminescence spectroscopy measurement of elastic strain in heteroepitaxial GaAs films Electronics Letters. 26: 835-837. DOI: 10.1049/El:19900548 |
0.412 |
|
| 1990 |
Jeon H, Nemanich RJ. Surface morphology of TiSi2 on silicon Thin Solid Films. 184: 357-363. DOI: 10.1016/0040-6090(90)90432-D |
0.45 |
|
| 1989 |
Posthill JB, Markunas RJ, Humphreys TP, Nemanich RJ, Das K, Parikh NR, Ross PL, Miner CJ. Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy Applied Physics Letters. 55: 1756-1758. DOI: 10.1063/1.102208 |
0.435 |
|
| 1989 |
Humphreys TP, Miner CJ, Posthill JB, Das K, Summerville MK, Nemanich RJ, Sukow CA, Parikh NR. Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates Applied Physics Letters. 54: 1687-1689. DOI: 10.1063/1.101303 |
0.389 |
|
| 1989 |
Nemanich RJ, Buehler EC, Legrice YM, Shroder RE, Parsons GN, Wang C, Lucovsky C, Boyce JB. Raman scattering from microcrystalline Si films: Considerations of composite structures with different optical absorption properties Journal of Non-Crystalline Solids. 114: 813-815. DOI: 10.1016/0022-3093(89)90729-1 |
0.381 |
|
| 1989 |
Davidson BN, Lucovsky G, Parsons GN, Nemanich RJ, Esser A, Seibert K, Kurz H. Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant Journal of Non-Crystalline Solids. 114: 579-581. DOI: 10.1016/0022-3093(89)90656-X |
0.388 |
|
| 1985 |
Nemanich R, Fulks RT, Stafford BL, Plas HAV. Initial reactions and silicide formation of titanium on silicon studied by Raman spectroscopy Journal of Vacuum Science and Technology. 3: 938-941. DOI: 10.1116/1.573355 |
0.409 |
|
| 1984 |
Nemanich R. Chapter 11 Schottky Barriers on a-Si: H Semiconductors and Semimetals. 21: 375-406. DOI: 10.1016/S0080-8784(08)63075-6 |
0.395 |
|
| 1983 |
Nemanich R, Thompson MJ, Jackson WB, Tsai CC, Stafford BL. Initial reactions at the interface of Pt and amorphous silicon Journal of Vacuum Science & Technology B. 1: 519-523. DOI: 10.1116/1.582592 |
0.386 |
|
| 1983 |
Tsai CC, Thompson MJ, Nemanich R, Jackson WB, Stafford BL. Summary Abstract: Metal–amorphous Si interfaces: Structural and electrical properties Journal of Vacuum Science and Technology. 1: 785-786. DOI: 10.1116/1.572000 |
0.35 |
|
| 1983 |
Tsai CC, Nemanich R, Thompson MJ, Stafford BL. Metal-induced crystallization of hydrogenated amorphous Si films Physica B-Condensed Matter. 953-955. DOI: 10.1016/0378-4363(83)90705-2 |
0.414 |
|
| 1983 |
Nemanich R, Thompson MJ, Jackson WB, Tsai CC, Stafford BL. Interface kinetics at metal contacts on a-Si: H Journal of Non-Crystalline Solids. 513-516. DOI: 10.1016/0022-3093(83)90633-6 |
0.367 |
|
| 1982 |
Tsai CC, Nemanich R, Thompson MJ. Interfacial reactions between Au and hydrogenated amorphous Si Journal of Vacuum Science and Technology. 21: 632-636. DOI: 10.1116/1.571802 |
0.401 |
|
| 1981 |
Biegelsen DK, Johnson NM, Nemanich R, Moyer MD, Fennell LE. Correlated Electrical and Microstructural Studies of Recrystallized Silicon Thin Films on Bulk Glass Substrates Mrs Proceedings. 4: 331-336. DOI: 10.1557/Proc-4-331 |
0.376 |
|
| 1981 |
Nemanich R, Tsai CC, Sigmon TW. Structure and growth of the interface of Pd on a-Si: H Physical Review B. 23: 6828-6831. DOI: 10.1103/Physrevb.23.6828 |
0.307 |
|
| 1981 |
Thompson MJ, Johnson NM, Nemanich R, Tsai CC. Silicide formation in Pd-a-Si:H Schottky barriers Applied Physics Letters. 39: 274-276. DOI: 10.1063/1.92670 |
0.324 |
|
| 1980 |
Nemanich R, Sigmon TW, Johnson NM, Moyer MD, Lau SS. Raman Spectroscopic Evaluation Of Silicides Formed With A Scanned Electron Beam. Mrs Proceedings. 1: 541-546. DOI: 10.1557/Proc-1-541 |
0.383 |
|
| 1980 |
Nemanich R, Knights JC. Structure and defects in the amorphous Si:As:H system Journal of Non-Crystalline Solids. 243-248. DOI: 10.1016/0022-3093(80)90601-8 |
0.329 |
|
| 1979 |
Lucovsky G, Nemanich RJ, Knights JC. Structural interpretation of the vibrational spectra ofa-Si: H alloys Physical Review B. 19: 2064-2073. DOI: 10.1103/Physrevb.19.2064 |
0.326 |
|
| 1978 |
Nemanich R, Lucovsky G, Pollard W, Joannopoulos J. Spectroscopic evidence for bonding coordination defects in amorphous as Solid State Communications. 26: 137-139. DOI: 10.1016/0038-1098(78)91055-4 |
0.31 |
|
| 1977 |
Nemanich R, Gorman M, Solin S. Raman-brillouin light scattering determination of the structural correlation range in ges2 glass Solid State Communications. 21: 277-280. DOI: 10.1016/0038-1098(77)90186-7 |
0.539 |
|
| 1977 |
Nemanich R, Solin SA, Lucovsky G. First evidence for vibrational excitations of large atomic clusters in amorphous semiconductors Solid State Communications. 21: 273-276. DOI: 10.1016/0038-1098(77)90185-5 |
0.536 |
|
| 1976 |
Nemanich R, Solin SA, Doehler J. Inexpensive high speed dentist drill light chopper and its use in rejecting luminescence background from Raman spectra Review of Scientific Instruments. 47: 741-744. PMID 775606 DOI: 10.1063/1.1134726 |
0.525 |
|
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