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Easwar Srinivasan - Publications

Affiliations: 
1992-1997 North Carolina State University, Raleigh, NC 
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
1998 Smith LL, Read WW, Yang CS, Srinivasan E, Courtney CH, Lamb HH, Parsons GN. Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon: Surface modification for controlled nucleation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1316-1320. DOI: 10.1116/1.581144  0.68
1998 Srinivasan E, Parsons GN. Hydrogen abstraction kinetics and crystallization in low temperature plasma deposition of silicon Applied Physics Letters. 72: 456-458. DOI: 10.1063/1.120785  0.704
1997 Srinivasan E, Parsons GN. Real-Time Kinetic Analysis of Hydrogen Abstraction and Etching Reactions Using Pulsed-Gas PECVD of Amorphous and Microcrystalline Silicon Mrs Proceedings. 467. DOI: 10.1557/Proc-467-501  0.611
1997 Srinivasan E, Lloyd DA, Parsons GN. Dominant monohydride bonding in hydrogenated amorphous silicon thin films formed by plasma enhanced chemical vapor deposition at room temperature Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 77-84. DOI: 10.1116/1.580480  0.689
1997 Smith LL, Srinivasan E, Parsons GN. Investigation of substrate-dependent nucleation of plasma-deposited microcrystalline silicon on glass and silicon substrates using atomic force microscopy Journal of Applied Physics. 82: 6041-6046. DOI: 10.1063/1.366471  0.627
1997 Srinivasan E, Parsons GN. Hydrogen elimination and phase transitions in pulsed-gas plasma deposition of amorphous and microcrystalline silicon Journal of Applied Physics. 81: 2847-2855. DOI: 10.1063/1.364309  0.719
1996 Srinivasan E, Ellis SJ, Nemanich R, Parsons GN. Large Crystallite Polysilicon Deposited Using Pulsed-Gas PECVD at Temperatures Less Than 250°C Mrs Proceedings. 452: 989-994. DOI: 10.1557/Proc-452-989  0.575
1996 Srinivasan E, Bordeaux JS, Parsons GN. Real-Time Monitoring of Hydrogen Elimination Processes in Pulsed-Gas PECVD Using in Situ Mass Spectroscopy Mrs Proceedings. 452. DOI: 10.1557/Proc-452-755  0.683
1996 Srinivasan E, Lloyd DA, Fang M, Parsons GN. Inert Gas Dilution and Ion Bombardment Effects in Room Temperature (35°C) Plasma Deposition of a-Si:H Mrs Proceedings. 420. DOI: 10.1557/Proc-420-399  0.664
1996 Srinivasan E, Yang H, Parsons GN. Ab initio calculation of hydrogen abstraction energetics from silicon hydrides Journal of Chemical Physics. 105: 5467-5471. DOI: 10.1063/1.472387  0.592
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