Peter G. Burke, Ph.D.

Affiliations: 
2013 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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"Peter Burke"

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John Edward Bowers grad student 2013 UC Santa Barbara
 (Molecular Beam Epitaxy Growth of Rare Earth Elements in III-V Semiconductors for Thermoelectrics.)
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Publications

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Mohammed AM, Koh YR, Vermeersch B, et al. (2015) Fractal Lévy Heat Transport in Nanoparticle Embedded Semiconductor Alloys. Nano Letters. 15: 4269-73
Ziabari A, Bahk JH, Xuan Y, et al. (2015) Sub-diffraction limit thermal imaging for HEMT devices Annual Ieee Semiconductor Thermal Measurement and Management Symposium. 2015: 82-87
Burke PG, Curtin BM, Bowers JE, et al. (2015) Minority carrier barrier heterojunctions for improved thermoelectric efficiency Nano Energy. 12: 735-741
Wang H, Bahk JH, Kang C, et al. (2014) Right sizes of nano- and microstructures for high-performance and rigid bulk thermoelectrics. Proceedings of the National Academy of Sciences of the United States of America. 111: 10949-54
Lu H, Ouellette DG, Preu S, et al. (2014) Self-assembled ErSb nanostructures with optical applications in infrared and terahertz. Nano Letters. 14: 1107-12
Kaun SW, Ahmadi E, Mazumder B, et al. (2014) GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 29
Favaloro T, Ziabari A, Bahk JH, et al. (2014) High temperature thermoreflectance imaging and transient Harman characterization of thermoelectric energy conversion devices Journal of Applied Physics. 116
Kyle ECH, Kaun SW, Burke PG, et al. (2014) High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy Journal of Applied Physics. 115
Kaun SW, Burke PG, Hoi Wong M, et al. (2012) Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures Applied Physics Letters. 101
Burke PG, Ismer L, Lu H, et al. (2012) Electrically active Er doping in InAs, In0.53Ga 0.47As, and GaAs Applied Physics Letters. 101
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