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Amitabh Chatterjee, Ph.D.

Affiliations: 
2011 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Computer Engineering
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"Amitabh Chatterjee"
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Forrest Brewer grad student 2011 UC Santa Barbara
 (Characterization and Modeling of High Current ESD Phenomenon in Drain Extended NMOS (De-NMOS).)

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Sinha DK, Ansari MS, Ray A, et al. (2018) Fast Ionization-Front-Induced Anomalous Switching Behavior in Trigger Bipolar Transistors of Marx-Bank Circuits Under Base-Drive Conditions Ieee Transactions On Plasma Science. 46: 2064-2071
Roy S, Chatterjee A, Sinha DK, et al. (2017) 2-D Analytical Modeling of Surface Potential and Threshold Voltage for Vertical Super-Thin Body FET Ieee Transactions On Electron Devices. 64: 2106-2112
Prajapati J, Bharadwaj M, Chatterjee A, et al. (2017) Circuit modeling and performance analysis of photoconductive antenna Optics Communications. 394: 69-79
Sinha DK, Chatterjee A. (2017) SPICE level implementation of physics of filamentation in ESD protection devices Microelectronics Reliability. 79: 239-247
Sinha DK, Chatterjee A, Schrimpf RD. (2016) Modeling Erratic Behavior Due to High Current Filamentation in Bipolar Structures under Dynamic Avalanche Conditions Ieee Transactions On Electron Devices. 63: 3185-3192
Chatterjee A, Shrivastava M, Gossner H, et al. (2011) An insight into ESD behavior of nanometer-scale drain extended NMOS (DeNMOS) devices: Part II (two-dimensional study-biasing & comparison with NMOS) Ieee Transactions On Electron Devices. 58: 318-326
Chatterjee A, Shrivastava M, Gossner H, et al. (2011) An insight into the ESD behavior of the nanometer-scale drain-extended NMOS device - Part I: Turn-on behavior of the parasitic bipolar Ieee Transactions On Electron Devices. 58: 309-317
Chatterjee A, Schrimpf RD, Pendharkar S, et al. (2005) Mechanisms leading to erratic snapback behavior in bipolar junction transistors with base emitter shorted Journal of Applied Physics. 97
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