Andrew S. Huntington, Ph.D.
Affiliations: | 2003 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Andrew Huntington"Parents
Sign in to add mentor| Larry A. Coldren | grad student | 2003 | UC Santa Barbara | |
| (Development of long -wavelength avalanche photodiodes and vertical -cavity lasers for epitaxial integration as a vertical-cavity photon number amplifier.) | ||||
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Publications
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| Carter SG, Ciulin V, Hanson M, et al. (2005) Terahertz-optical mixing in undoped and doped GaAs quantum wells: From excitonic to electronic intersubband transitions Physical Review B - Condensed Matter and Materials Physics. 72 |
| Wang CS, Koda R, Huntington AS, et al. (2005) >100% output differential efficiency 1.55-μm VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP Journal of Crystal Growth. 277: 13-20 |
| Zheng XG, Hsu JS, Hurst JB, et al. (2004) Long-wavelength In0.53 Ga0.47As-In0.52 Al0.48As large-area avalanche photodiodes and arrays Ieee Journal of Quantum Electronics. 40: 1068-1073 |
| Ciulin V, Carter SG, Sherwin MS, et al. (2004) Terahertz optical mixing in biased GaAs single quantum wells Physical Review B - Condensed Matter and Materials Physics. 70: 115312-1-115312-6 |
| Carter SG, Ciulin V, Sherwin MS, et al. (2004) Terahertz electro-optic wavelength conversion in GaAs quantum wells: Improved efficiency and room-temperature operation Applied Physics Letters. 84: 840-842 |
| Huntington AS, Wang CS, Zheng XG, et al. (2004) Relationship of growth mode to surface morphology and dark current in InAlAs/InGaAs avalanche photodiodes grown by MBE on InP Journal of Crystal Growth. 267: 458-465 |
| Reddy MHM, Asano T, Feezell D, et al. (2004) Selectively etched tunnel junction for lateral current and optical confinement InP-based vertical cavity lasers Journal of Electronic Materials. 33: 118-122 |
| Campbell JC, Wang S, Zheng X, et al. (2003) Photodetectors: UV to IR Proceedings of Spie - the International Society For Optical Engineering. 5246: 375-388 |
| Asano T, Feezell D, Koda R, et al. (2003) InP-based all-epitaxial 1.3-μm VCSELs with selectivity etched AlInAs apertures and Sb-based DBRs Ieee Photonics Technology Letters. 15: 1333-1335 |
| Reddy MHM, Buell DA, Feezell D, et al. (2003) Continuous-wave operation of 1.55-μm vertical-cavity surface-emitting laser with digital-alloy active region using submonolayer superlattices Ieee Photonics Technology Letters. 15: 891-893 |