Michael D. Craven, Ph.D.

Affiliations: 
2003 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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"Michael Craven"

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Steven P Denbaars grad student 2003 UC Santa Barbara
 (a-Plane oriented gallium nitride thin films: Heteroepitaxy, quantum wells, and lateral overgrowth.)
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Publications

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Imer B, Wu F, Craven MD, et al. (2006) Stability of (11̄00) m-plane GaN films grown by metalorganic chemical vapor deposition Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 8644-8647
Lübbert D, Mikulík P, Pernot P, et al. (2006) X-ray microdiffraction imaging investigations of wing tilt in epitaxially overgrown GaN Physica Status Solidi (a) Applications and Materials Science. 203: 1733-1738
Chichibu SF, Koida T, Craven MD, et al. (2005) Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique Physica Status Solidi C: Conferences. 2: 2700-2703
Chakraborty A, Xing H, Craven MD, et al. (2004) Nonpolar a-plane p-type GaN and p-n junction diodes Journal of Applied Physics. 96: 4494-4499
Katona TM, Craven MD, Speck JS, et al. (2004) Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AIGaN Applied Physics Letters. 85: 1350-1352
Koida T, Chichibu SF, Sota T, et al. (2004) Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth Applied Physics Letters. 84: 3768-3770
Craven MD, Wu F, Chakraborty A, et al. (2004) Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition Applied Physics Letters. 84: 1281-1283
Craven MD, Waltereit P, Speck JS, et al. (2004) Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells Applied Physics Letters. 84: 496-498
Craven MD, Waltereit P, Wu F, et al. (2003) Characterization of a-plane GaN/(Al,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition Japanese Journal of Applied Physics, Part 2: Letters. 42: L235-L238
Haskell BA, Wu F, Craven MD, et al. (2003) Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy Applied Physics Letters. 83: 644-646
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