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Bilge Imer, Ph.D.

Affiliations: 
2006 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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"Bilge Imer"
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Steven P Denbaars grad student 2006 UC Santa Barbara
 (Improved quality non-polar III-nitride heteroepitaxial films and devices.)

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Tigan D, Genlik SP, Imer B, et al. (2019) Core/shell copper nanowire networks for transparent thin film heaters. Nanotechnology. 30: 325202
Navarro A, Rivera C, Pereiro J, et al. (2009) High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications Applied Physics Letters. 94
Imer B, Haskell B, Rajan S, et al. (2008) Electrical characterization of low defect density nonpolar (1120) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) Journal of Materials Research. 23: 551-555
Imer B, Schmidt M, Haskell B, et al. (2008) Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) Physica Status Solidi (a) Applications and Materials Science. 205: 1705-1712
Rudin S, Garrett GA, Shen H, et al. (2007) Temperature-dependent radiative lifetimes of excitons in non-polar GaN/AlGaN quantum wells Aip Conference Proceedings. 893: 315-316
Imer B, Wu F, Speck JS, et al. (2007) Growth evolution in sidewall lateral epitaxial overgrowth (SLEO) Journal of Crystal Growth. 306: 330-338
Behn U, Misra P, Grahn HT, et al. (2007) Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy Physica Status Solidi (a) Applications and Materials Science. 204: 299-303
Imer B, Wu F, Craven MD, et al. (2006) Stability of (11̄00) m-plane GaN films grown by metalorganic chemical vapor deposition Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 8644-8647
Misra P, Behn U, Brandt O, et al. (2006) Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy Applied Physics Letters. 88
Imer BM, Wu F, Denbaars SP, et al. (2006) Improved quality (112̄0) a-plane GaN with sidewall lateral epitaxial overgrowth Applied Physics Letters. 88
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