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Nathan A. Pfaff, Ph.D.

Affiliations: 
2013 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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Steven P Denbaars grad student 2013 UC Santa Barbara
 (Thermal Performance of III-Nitride Light Emitting Diodes and Developments in Laser Based White Lighting.)

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Cantore M, Pfaff N, Farrell RM, et al. (2016) High luminous flux from single crystal phosphor-converted laser-based white lighting system. Optics Express. 24: A215-21
Keller S, Li H, Laurent M, et al. (2014) Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides Semiconductor Science and Technology. 29
Pfaff NA, Kelchner KM, Feezell DF, et al. (2013) Thermal performance of violet and blue single-quantum-well nonpolar m-plane InGaN light-emitting diodes Applied Physics Express. 6
Denbaars SP, Feezell D, Kelchner K, et al. (2013) Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays Acta Materialia. 61: 945-951
Pan CC, Gilbert T, Pfaff N, et al. (2012) Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes Applied Physics Express. 5
Keller S, Pfaff N, Denbaars SP, et al. (2012) Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (000 1̄) GaN Applied Physics Letters. 101
Chung RB, Han C, Pan CC, et al. (2012) The reduction of efficiency droop by Al 0.82In 0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes Applied Physics Letters. 101
Haeger DA, Young EC, Chung RB, et al. (2012) 384 nm laser diode grown on a (202̄1) semipolar relaxed AlGaN buffer layer Applied Physics Letters. 100
Hu YL, Farrell RM, Neufeld CJ, et al. (2012) Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells Applied Physics Letters. 100
Garrett GA, Rotella P, Shen H, et al. (2012) Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN Physica Status Solidi (B) Basic Research. 249: 507-510
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