James R. Guthrie, Ph.D.
Affiliations: | 2000 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"James Guthrie"Parents
Sign in to add mentor| Mark J. W. Rodwell | grad student | 2000 | UC Santa Barbara | |
| (Metal substrate process and W -band power amplifier integrated circuits in transferred-substrate HBT technology.) | ||||
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Publications
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| Rodwell MJW, Urteaga M, Mathew T, et al. (2001) Submicron scaling of HBTs Ieee Transactions On Electron Devices. 48: 2606-2624 |
| Krishnan S, Mensa D, Guthrie J, et al. (2000) Broadband lumped HBT amplifiers Electronics Letters. 36: 466-467 |
| Guthrie JR, Urteaga M, Scott D, et al. (2000) HBT MMIC 75 GHz and 78 GHz power amplifiers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 246-249 |
| Lee Q, Mensa D, Guthrie J, et al. (1999) 66 GHz static frequency divider in transferred-substrate HBT technology Ieee Radio Frequency Integrated Circuits Symposium, Rfic, Digest of Technical Papers. 87-90 |
| Lee Q, Martin SC, Mensa D, et al. (1999) Submicron transferred-substrate heterojunction bipolar transistors Ieee Electron Device Letters. 20: 396-398 |
| Mensa D, Pullela R, Lee Q, et al. (1999) 48-GHz Digital IC's and 85-GHz Baseband Amplifiers Using Transferred-Substrate HBT's Ieee Journal of Solid-State Circuits. 34: 1196-1203 |
| Mensa D, Lee Q, Guthrie J, et al. (1999) Transferred-substrate HBTs with 254 GHz fτ Electronics Letters. 35: 605-606 |
| Guthrie JR, Mensa D, Mathew T, et al. (1999) 50 mm copper/polymer substrate HBT IC technology for >100 GHz MMICs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 427-430 |
| Rodwell M, Lee Q, Mensa D, et al. (1999) Transferred-substrate HBT integrated circuits Solid-State Electronics. 43: 1489-1495 |
| Lee Q, Martin SC, Mensa D, et al. (1999) Submicron transferred-substrate heterojunction bipolar transistors with greater than 800 GHz fmax Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 175-178 |