Evan Lobisser, Ph.D.
Affiliations: | 2011 | Electrical & Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Evan Lobisser"Parents
Sign in to add mentor| Mark J. W. Rodwell | grad student | 2011 | UC Santa Barbara | |
| (Scaling Mesa Indium Phosphide DHBTs to Record Bandwidths.) | ||||
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Publications
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| Lobisser E, Rode JC, Jain V, et al. (2013) InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 769-772 |
| Jain V, Lobisser E, Baraskar A, et al. (2011) InGaAs/InP DHBTs in a dry-etched refractory metal emitter process demonstrating simultaneous fτ/fmax ∼430/800GHz Ieee Electron Device Letters. 32: 24-26 |
| Urteaga M, Pierson R, Rowell P, et al. (2011) 130nm InP DHBTs with ft >0.52THz and fmax >1.1THz Device Research Conference - Conference Digest, Drc. 281-282 |
| Jain V, Rode JC, Chiang HW, et al. (2011) 1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance Device Research Conference - Conference Digest, Drc. 271-272 |
| Carter AD, Law JJM, Lobisser E, et al. (2011) 60 nm gate length Al2O3 / In0.53Ga 0.47As gate-first MOSFETs using InAs raised source-drain regrowth Device Research Conference - Conference Digest, Drc. 19-20 |
| Urteaga M, Seo M, Hacker J, et al. (2011) InP HBTs for THz frequency integrated circuits Conference Proceedings - International Conference On Indium Phosphide and Related Materials |
| Jain V, Lobisser E, Baraskar A, et al. (2011) InGaAs/InP DHBTs demonstrating simultaneous f τ/f max ∼ 460/850 GHz in a refractory emitter process Conference Proceedings - International Conference On Indium Phosphide and Related Materials |
| Baraskar A, Wistey MA, Jain V, et al. (2010) Ex situ Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C5l7-C5l9 |
| Jain V, Lobisser E, Baraskar A, et al. (2010) High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology Device Research Conference - Conference Digest, Drc. 153-154 |
| Jain V, Baraskar AK, Wistey MA, et al. (2009) Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 358-361 |