Georgios D. Panagopoulos, Ph.D.
Affiliations: | 2012 | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
Area:
General Engineering, Electronics and Electrical EngineeringGoogle:
"Georgios Panagopoulos"Parents
Sign in to add mentor| Kaushik Roy | grad student | 2012 | Purdue | |
| (On variability and reliability of CMOS and spin-based devices.) | ||||
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Publications
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| Ho CH, Kim SY, Panagopoulos GD, et al. (2016) Statistical TDDB Degradation in Memory Circuits: Bit-Cells to Arrays Ieee Transactions On Electron Devices |
| Panagopoulos G, Ho C, Kim SY, et al. (2015) Physics-Based Compact Modeling of Successive Breakdown in Ultrathin Oxides Ieee Transactions On Nanotechnology. 14: 7-9 |
| Moradi F, Panagopoulos G, Karakonstantis G, et al. (2014) Multi-level wordline driver for robust SRAM design in nano-scale CMOS technology Microelectronics Journal. 45: 23-34 |
| Panagopoulos GD, Augustine C, Roy K. (2013) Physics-based SPICE-compatible compact model for simulating hybrid MTJ/CMOS circuits Ieee Transactions On Electron Devices. 60: 2808-2814 |
| Ho C, Panagopoulos G, Roy K. (2013) A Self-Consistent Electrothermal Model for Analyzing NBTI Effect in p-Type Poly-Si Thin-Film Transistors Ieee Transactions On Electron Devices. 60: 288-294 |
| Ho CH, Panagopoulos GD, Kim SY, et al. (2013) A physics-based statistical model for reliability of STT-MRAM considering oxide variability International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 29-32 |
| Ho CH, Panagopoulos GD, Kim SY, et al. (2013) A physical model to predict STT-MRAM performance degradation induced by TDDB Device Research Conference - Conference Digest, Drc. 59-60 |
| Sharad M, Augustine C, Panagopoulos G, et al. (2012) Spin-based neuron model with domain-wall magnets as synapse Ieee Transactions On Nanotechnology. 11: 843-853 |
| Gupta SK, Panagopoulos G, Roy K. (2012) NBTI in n-Type SOI Access FinFETs in SRAMs and Its Impact on Cell Stability and Performance Ieee Transactions On Electron Devices. 59: 2603-2609 |
| Ho C, Panagopoulos G, Roy K. (2012) A Physical Model for Grain-Boundary-Induced Threshold Voltage Variation in Polysilicon Thin-Film Transistors Ieee Transactions On Electron Devices. 59: 2396-2402 |