Binh-Minh Nguyen, Ph.D.

Affiliations: 
2010 Electrical and Computer Engineering Northwestern University, Evanston, IL 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Condensed Matter Physics
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"Binh-Minh Nguyen"

Parents

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Manijeh Razeghi grad student 2010 Northwestern
 (Theoretical Design and Material Growth of Type-II Antimonide-based Superlattices for Infrared Detection and Imaging.)
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Publications

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de Vries FK, Timmerman T, Ostroukh VP, et al. (2018) h/e Superconducting Quantum Interference through Trivial Edge States in InAs. Physical Review Letters. 120: 047702
Beukman AJA, de Vries FK, van Veen J, et al. (2017) Spin-orbit interaction in a dual gated InAs/GaSb quantum well Physical Review B. 96
Chen R, Nguyen B, Tang W, et al. (2017) In situ control of synchronous germanide/silicide reactions with Ge/Si core/shell nanowires to monitor formation and strain evolution in abrupt 2.7 nm channel length Applied Physics Letters. 110: 213103
Qu F, van Veen J, de Vries FK, et al. (2016) Quantized conductance and large g-factor anisotropy in InSb quantum point contacts. Nano Letters
Nguyen BM, Kiselev AA, Noah R, et al. (2016) Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry. Physical Review Letters. 117: 077701
Nichele F, Suominen HJ, Kjaergaard M, et al. (2016) Edge transport in the trivial phase of InAs/GaSb New Journal of Physics. 18: 083005
Qu F, Beukman AJ, Nadj-Perge S, et al. (2015) Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells. Physical Review Letters. 115: 036803
Yoo J, Nguyen BM, Campbell IH, et al. (2015) Si Radial p-i-n Junction Photovoltaic Arrays with Built-In Light Concentrators. Acs Nano. 9: 5154-63
Yi W, Kiselev AA, Thorp J, et al. (2015) Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures Applied Physics Letters. 106
Nguyen BM, Yi W, Noah R, et al. (2015) High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate Applied Physics Letters. 106
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