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Nathan A. Sustersic, Ph.D.

Affiliations: 
2009 Department of Electrical and Computer Engineering University of Delaware, Newark, DE, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Optics Physics
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James Kolodzey grad student 2009 University of Delaware
 (The design, fabrication, and characterization of silicon-germanium optoelectronic devices grown by molecular beam epitaxy.)

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Publications

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Faleev N, Sustersic N, Bhargava N, et al. (2013) Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(0 0 1) and Ge(0 0 1) substrates: I - High-resolution x-ray diffraction and x-ray topography Journal of Crystal Growth. 365: 44-53
Faleev N, Sustersic N, Bhargava N, et al. (2013) Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II - Transmission electron microscopy and atomic force microscopy Journal of Crystal Growth. 365: 35-43
Coppinger M, Sustersic NA, Kolodzey J, et al. (2011) Sensitivity of a vanadium oxide uncooled microbolometer array for terahertz imaging Optical Engineering. 50
Nataraj L, Sustersic N, Coppinger M, et al. (2010) Structural and optical characterization of Germanium-rich islands on silicon grown by Molecular Beam Epitaxy Optics Infobase Conference Papers
Nataraj L, Sustersic N, Coppinger M, et al. (2010) Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy Applied Physics Letters. 96
Antonova IV, Neustroev EP, Smagulova SA, et al. (2009) Confinement levels in passivated SiGe/Si quantum well structures Solid State Phenomena. 156: 541-546
Antonova IV, Neustroev EP, Smagulova SA, et al. (2009) Deep-level spectroscopy studies of confinement levels in SiGe quantum wells Journal of Applied Physics. 106
Sustersic N, Nataraj L, Weiland C, et al. (2009) Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots Applied Physics Letters. 94
Kagan M, Antonova I, Neustroev E, et al. (2009) Confinement levels in SiGe quantum wells studied by charge spectroscopy Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 2707-2709
Xuan G, Adam TN, Lv PC, et al. (2008) Dry etching of SiGe alloys by xenon difluoride Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 385-388
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