Xingang Zhang, Ph.D.
Affiliations: | 2001 | University of Southern California, Los Angeles, CA, United States |
Area:
Materials Science EngineeringGoogle:
"Xingang Zhang"Parents
Sign in to add mentor| P Daniel Dapkus | grad student | 2001 | USC | |
| (Pattern dependent lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Khatsevich S, Rich DH, Zhang X, et al. (2007) Correlating exciton localization with compositional fluctuations in InGaNGaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms Journal of Applied Physics. 102 |
| Khatsevich S, Rich DH, Zhang X, et al. (2004) Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence Journal of Applied Physics. 95: 1832-1842 |
| Zhang X, Li RR, Dapkus PD, et al. (2000) Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique Applied Physics Letters. 77: 2213-2215 |
| Zhang X, Dapkus PD, Rich DH. (2000) Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation Applied Physics Letters. 77: 1496-1498 |
| Kobayashi NP, Kobayashi JT, Zhang X, et al. (1999) Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate Applied Physics Letters. 74: 2836-2838 |
| Zhang X, Rich DH, Kobayashi JT, et al. (1998) Carrier relaxation and recombination in InGaN/GaN quantum heterostructures probed with time-resolved cathodoluminescence Mrs Proceedings. 512 |
| Zhang X, Rich DH, Lin C-, et al. (1998) Cathodoluminescence study of disordering of GaAs/AlGaAs quantum wells using an AlAs native oxide and thermal annealing technique Journal of Applied Physics. 84: 1095-1100 |
| Zhang X, Rich DH, Kobayashi JT, et al. (1998) Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence Applied Physics Letters. 73: 1430-1432 |
| Kobayashi JT, Kobayashi NP, Zhang X, et al. (1998) Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD Journal of Crystal Growth. 195: 252-257 |
| Kobayashi NP, Kobayashi JT, Choi W, et al. (1998) Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer Journal of Crystal Growth. 189: 172-177 |