Lingquan Wang, Ph.D.
Affiliations: | 2009 | Electrical Engineering (Applied Physics) | University of California, San Diego, La Jolla, CA |
Area:
Electronics and Electrical EngineeringGoogle:
"Lingquan Wang"Parents
Sign in to add mentor| Peter M. Asbeck | grad student | 2009 | UCSD | |
| (Design of scaled electronic devices based on III-V materials.) | ||||
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Publications
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| Lu W, Wang L, Gu S, et al. (2011) Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky Barriers Ieee Transactions On Electron Devices. 58: 1986-1994 |
| Yuan Y, Wang L, Yu B, et al. (2011) A distributed model for border traps in Al2O3 - InGaAs MOS devices Ieee Electron Device Letters. 32: 485-487 |
| Lee KM, Wang L, Asbeck PM, et al. (2010) Analysis of resistance asymmetry due to p-n junctions in graphene FETs Materials Research Society Symposium Proceedings. 1259: 23-28 |
| Asbeck PM, Wang L, Gu S, et al. (2010) Tunneling MOSFETs based on III-V staggered heterojunctions Materials Research Society Symposium Proceedings. 1252: 3-9 |
| Lu W, Wang L, Gu S, et al. (2010) InGaN/GaN Schottky Diodes With Enhanced Voltage Handling Capability for Varactor Applications Ieee Electron Device Letters. 31: 1119-1121 |
| Wang L, Yu E, Taur Y, et al. (2010) Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications Ieee Electron Device Letters. 31: 431-433 |
| Kim EJ, Wang L, Asbeck PM, et al. (2010) Border traps in Al2 O3 / In0.53 Ga 0.47 As (100) gate stacks and their passivation by hydrogen anneals Applied Physics Letters. 96 |
| Wang L, Asbeck PM, Taur Y. (2010) Self-consistent 1-D Schrödinger-Poisson solver for III-V heterostructures accounting for conduction band non-parabolicity Solid-State Electronics. 54: 1257-1262 |
| Passlack M, Droopad R, Fejes P, et al. (2009) Electrical Properties of $\hbox{Ga}_{2}\hbox{O}_{3}/ \hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs Ieee Electron Device Letters. 30: 2-4 |
| Yu B, Wang L, Yuan Y, et al. (2008) Scaling of nanowire transistors Ieee Transactions On Electron Devices. 55: 2846-2858 |