Mehran Mehregany
Affiliations: | Materials Science and Engineering | Case Western Reserve University, Cleveland Heights, OH, United States |
Area:
Materials Science EngineeringWebsite:
https://engineering.case.edu/profiles/mxm31Google:
"Mehran Mehregany"Bio:
https://www.healthworkscollective.com/wp-content/uploads/2012/10/mehregany_bio_august_2012.pdf
Mehregany, Mehran Application of micromachined structures to the study of mechanical properties and adhesion of thin films Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1986.
Mehregany, Mehran Microfabricated silicon electric mechanisms Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1990.
Parents
Sign in to add mentor| Stephen D. Senturia | grad student | 1990 | MIT (Chemistry Tree) | |
| (Microfabricated silicon electric mechanisms) | ||||
Children
Sign in to add trainee| Aaron J. Fleischman | grad student | 2000 | Case Western |
| Daniel J. Hyman | grad student | 2000 | Case Western |
| Chien H. Wu | grad student | 2001 | Case Western |
| Hung-I Kuo | grad student | 2002 | Case Western |
| Shih-Shian Ho | grad student | 2011 | Case Western |
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Publications
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| Ho SS, Rajgopal S, Mehregany M. (2016) Thick PECVD silicon dioxide films for MEMS devices Sensors and Actuators, a: Physical. 240: 1-9 |
| Trevino J, Fu XA, Mehregany M, et al. (2014) Doped polycrystalline 3C-SiC films with low stress for MEMS: Part II. Characterization using micromachined structures Journal of Micromechanics and Microengineering. 24 |
| Fu XA, Trevino J, Mehregany M, et al. (2014) Doped polycrystalline 3C-SiC films with low stress for MEMS: Part I. Deposition conditions and film properties Journal of Micromechanics and Microengineering. 24 |
| Soong CW, Garverick SL, Fu XA, et al. (2013) A fully monolithic 6H-SiC JFET-based transimpedance amplifier for higherature capacitive sensing Ieee Transactions On Electron Devices. 60: 4146-4151 |
| Lei MI, Mehregany M. (2013) Characterization of thermoelectric properties of heavily doped n-Type polycrystalline silicon carbide thin films Ieee Transactions On Electron Devices. 60: 513-517 |
| Speer KM, Neudeck PG, Mehregany M. (2012) A reduction of defects in the SiO 2-SiC system using the SiC vacuum field-effect transistor (VacFET) Materials Science Forum. 717: 777-780 |
| Lei MI, Mehregany M. (2012) Seebeck coefficient of heavily doped polycrystalline 3C-SiC deposited by LPCVD Materials Science Forum. 717: 541-544 |
| Jin S, Rajgopal S, Mehregany M. (2012) Characterization of poly-SiC pressure sensors for high temperature and high pressure applications Materials Science Forum. 717: 1211-1214 |
| Soong CW, Patil AC, Garverick SL, et al. (2012) 550 ${\circ}\hbox{C}$ integrated logic circuits using 6H-SiC JFETs Ieee Electron Device Letters. 33: 1369-1371 |
| Myers DR, Azevedo RG, Chen L, et al. (2012) Passive substrate temperature compensation of doubly anchored double-ended tuning forks Journal of Microelectromechanical Systems. 21: 1321-1328 |