Karl D. Hirschman
Affiliations: | Microsystems Engineering | Rochester Institute of Technology, Rochester, NY, United States |
Area:
Solid State Physics, Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Karl Hirschman"
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Publications
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Mudgal T, Bhadrachalam K, Bischoff P, et al. (2017) Communication—CMOS Thin-Film Transistors via Xe Flash-Lamp Crystallization of Patterned Amorphous Si Ecs Journal of Solid State Science and Technology. 6 |
Mudgal T, Walsh N, Edwards N, et al. (2015) Study of back-channel defect states on bottom-gate IGZO TFTs using capacitance-voltage analysis Materials Research Society Symposium Proceedings. 1731: 25-30 |
Mudgal T, Walsh N, Manley RG, et al. (2014) Passivation and annealing for improved stability of high performance IGZO TFTs Materials Research Society Symposium Proceedings. 1692 |
Mudgal T, Reepmeyer C, Manley RG, et al. (2014) Crystallization of amorphous silicon and dopant activation using xenon flash-lamp annealing (FLA) Materials Research Society Symposium Proceedings. 1666 |
Mudgal T, Walsh N, Manley RG, et al. (2014) Impact of annealing on contact formation and stability of IGZO TFTs Ecs Transactions. 61: 405-417 |
Mudgal T, Walsh N, Edwards N, et al. (2014) Interpretation of defect states in sputtered IGZO devices using I-V and C-V analysis Ecs Transactions. 64: 93-100 |
Li Q, Mudgal T, Meller PM, et al. (2012) A comparative study on the activation behavior of implanted boron and phosphorus for LTPS using solid-phase crystallization Materials Research Society Symposium Proceedings. 1426: 281-286 |
Veeramachaneni B, Winans JD, Hu S, et al. (2011) A novel technique for localized formation of SOI active regions Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1865-1868 |
Winans JD, Lee JY, Veeramachaneni B, et al. (2011) Isolated silicon waveguides via porous silicon formation by targeted fluorine doping Physica Status Solidi (a) Applications and Materials Science. 208: 1446-1448 |
Rettmann RD, Couillard JG, Hirschman KD. (2010) Characterization of silicon-on-glass substrates using variable angle spectroscopic ellipsometry Ecs Transactions. 33: 135-142 |