Tadao Hashimoto, Ph.D.
Affiliations: | 2005 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Materials Science EngineeringGoogle:
"Tadao Hashimoto"Parents
Sign in to add mentorShuji Nakamura | grad student | 2005 | UC Santa Barbara | |
(Bulk growth of group III nitrides by the chemical vapor reaction process and the ammonothermal method.) |
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Publications
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Key D, Letts E, Tsou CW, et al. (2019) Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production. Materials (Basel, Switzerland). 12 |
Hashimoto T, Letts ER, Key D, et al. (2019) Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method Japanese Journal of Applied Physics. 58 |
Letts E, Sun Y, Key D, et al. (2018) X-ray characterization technique for the assessment of surface damage in GaN wafers Journal of Crystal Growth. 501: 13-17 |
Letts E, Key D, Hashimoto T. (2016) Reduction of crack density in ammonothermal bulk GaN growth Journal of Crystal Growth. 456: 27-32 |
Sintonen S, Suihkonen S, Jussila H, et al. (2014) Defect structure of a free standing GaN wafer grown by the ammonothermal method Journal of Crystal Growth. 406: 72-77 |
Letts E, Hashimoto T, Hoff S, et al. (2014) Development of GaN wafers via the ammonothermal method Journal of Crystal Growth. 403: 3-6 |
Letts E, Hashimoto T, Ikari M, et al. (2012) Development of GaN wafers for solid-state lighting via the ammonothermal method Journal of Crystal Growth. 350: 66-68 |
Nojima Y, Ikari M, Letts E, et al. (2011) Improvement of structural quality in the initial stage of GaN growth by basic ammonothermal method Journal of Crystal Growth. 317: 132-134 |
Hashimoto T, Letts E, Ikari M, et al. (2010) Improvement of crystal quality in ammonothermal growth of bulk GaN Journal of Crystal Growth. 312: 2503-2506 |
Saito M, Yamada H, Iso K, et al. (2009) Evaluation of GaN substrates grown in supercritical basic ammonia Applied Physics Letters. 94 |