Eric Kvam

Affiliations: 
Materials Engineering Purdue University, West Lafayette, IN, United States 
Area:
Materials Science Engineering
Website:
https://engineering.purdue.edu/MSE/people/ptProfile?resource_id=11337
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"Eric Kvam"
Bio:

Kvam, Eric Peter TEM study of dislocation structure in grain boundaries in metals Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1985.

Parents

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Robert W. Balluffi grad student 1985 MIT (Physics Tree)
 (TEM study of dislocation structure in grain boundaries in metals.)

Children

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Vidyut Gopal grad student 2000 Purdue
Mehmed C. Akatay grad student 2013 Purdue
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Publications

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Gopal V, Vasiliev AL, Kvam EP. (2001) Misfit dislocation introduction during the epitaxial growth of InAs islands on GaP Materials Research Society Symposium - Proceedings. 673
Lakshmanan A, Gopal V, King AH, et al. (2001) Dislocation arrays in the interfaces between substrates and epitaxial islands Materials Research Society Symposium - Proceedings. 672
Gopal V, Vasiliev AL, Kvam EP. (2001) Strain relaxation and dislocation introduction in lattice-mismatched InAs/GaP heteroepitaxy Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 81: 2481-2501
Gopal V, Kvam EP, Chen EH, et al. (2000) Sequential operation of three distinct misfit dislocation introduction mechanisms in an epitaxial bilayer film Materials Research Society Symposium - Proceedings. 594: 157-162
Kvam EP. (1994) Interactions of dislocations and antiphase (inversion) domain boundaries in III-V/IV heteroepitaxy Journal of Electronic Materials. 23: 1021-1026
Kvam EP, Pavate V, Linehan DS. (1994) Dislocations and flux pinning in YBa2Cu3O7 Journal of Electronic Materials. 23: 1183-1189
Zanota A, Kvam EP, Balkin D, et al. (1993) Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy Applied Physics Letters. 62: 2722-2724
Kvam EP, Maher DM, Humphreys CJ. (1990) Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si Journal of Materials Research. 5: 1900-1907
Eaglesham DJ, Kvam EP, Maher DM, et al. (1989) Dislocation nucleation near the critical thickness in GeSi/Si strained layers Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 59: 1059-1073
Kvam EP, Balluffi RW. (1987) Observations of hierarchical grain-boundary dislocation structures in [001] symmetric tilt boundaries in gold Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 56: 137-148
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