Joerg Appenzeller

Affiliations: 
Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Nanotechnology
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"Joerg Appenzeller"

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Hong-Yan Chen grad student 2013 Purdue
Saptarshi Das grad student 2013 Purdue
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Publications

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Lan HY, Lin CP, Liu L, et al. (2025) Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe transistors. Nature Communications. 16: 4160
Lan HY, Tan Y, Yang SH, et al. (2025) Improved Hysteresis of High-Performance p-Type WSe Transistors with Native Oxide WO Interfacial Layer. Nano Letters
Tan Y, Yang SH, Lin CP, et al. (2025) Monolayer WSe Field-Effect Transistor Performance Enhancement by Atomic Defect Engineering and Passivation. Acs Nano
Cai J, Sun Z, Wu P, et al. (2023) High-Performance Complementary Circuits from Two-Dimensional MoTe. Nano Letters
Sun Z, Pang CS, Wu P, et al. (2022) Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS. Acs Nano
Pang CS, Zhou R, Liu X, et al. (2021) Mobility Extraction in 2D Transition Metal Dichalcogenide Devices-Avoiding Contact Resistance Implicated Overestimation. Small (Weinheim An Der Bergstrasse, Germany). e2100940
Wu P, Appenzeller J. (2021) Artificial Sub-60 Millivolts/Decade Switching in a Metal-Insulator-Metal-Insulator-Semiconductor Transistor without a Ferroelectric Component. Acs Nano
Shen T, Ostwal V, Camsari KY, et al. (2020) Demonstration of a pseudo-magnetization based simultaneous write and read operation in a CoFeB/Pb(MgNb)TiO heterostructure. Scientific Reports. 10: 10791
Ostwal V, Shen T, Appenzeller J. (2020) Efficient Spin-Orbit Torque Switching of the Semiconducting Van Der Waals Ferromagnet Cr Ge Te. Advanced Materials (Deerfield Beach, Fla.). e1906021
Zhang F, Zhang H, Krylyuk S, et al. (2019) Electric-field induced structural transition in vertical MoTe- and MoWTe-based resistive memories. Nature Materials. 18: 55-61
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