Yaocheng Liu, Ph.D.
Affiliations: | 2005 | Stanford University, Palo Alto, CA |
Area:
Materials Science EngineeringGoogle:
"Yaocheng Liu"Parents
Sign in to add mentor| James D. Plummer | grad student | 2005 | Stanford | |
| (Silicon and germanium crystallization techniques for advanced device applications.) | ||||
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Publications
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| Feng J, Woo R, Chen S, et al. (2007) P-channel germanium FinFET based on rapid melt growth Ieee Electron Device Letters. 28: 637-639 |
| Feng J, Liu Y, Griffin PB, et al. (2006) Integration of germanium-on-insulator and silicon MOSFETs on a silicon substrate Ieee Electron Device Letters. 27: 911-913 |
| Liu Y, Deal MD, Plummer JD. (2005) Rapid melt growth of germanium crystals with self-aligned microcrucibles on Si substrates Journal of the Electrochemical Society. 152: G688-G693 |
| Liu Y, Deal MD, Plummer JD. (2004) High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates Applied Physics Letters. 84: 2563-2565 |
| Liu Y, Deal MD, Saraswat KC, et al. (2002) Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si Applied Physics Letters. 81: 4634-4636 |
| Liu Y, Dutton RW, Deal MD. (1992) Schottky contact effects in the sidegating effect of GaAs devices Ieee Electron Device Letters. 13: 149-151 |
| Liu Y, Dutton RW, Deal MD. (1990) Sidegating effect of GaAs MESFETs and leakage current in a semi-insulating GaAs substrate Ieee Electron Device Letters. 11: 505-507 |