Weiping Bai, Ph.D.
Affiliations: | 2007 | Electrical and Computer Engineering | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical EngineeringGoogle:
"Weiping Bai"Parents
Sign in to add mentor| Dim-Lee Kwong | grad student | 2007 | UT Austin | |
| (Germanium MOS devices integrating high-kappa dielectric and metal gate.) | ||||
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Publications
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| Bai W, Kwong DL. (2007) Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium Ieee Electron Device Letters. 28: 369-372 |
| Bai W, Lu N, Ritenour AP, et al. (2006) In situ cleaning effect on the electrical properties of Ge MOS devices by Ar gas anneal Ieee Transactions On Electron Devices. 53: 2661-2664 |
| Bai W, Lu N, Ritenour AP, et al. (2006) The electrical properties of HfO/sub 2/ dielectric on germanium and the substrate doping effect Ieee Transactions On Electron Devices. 53: 2551-2558 |
| Lu N, Bai W, Ramirez A, et al. (2005) Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric Applied Physics Letters. 87: 051922 |
| Wang X, Liu J, Bai W, et al. (2004) A Novel MONOS-Type Nonvolatile Memory Using High-<tex>$kappa$</tex>Dielectrics for Improved Data Retention and Programming Speed Ieee Transactions On Electron Devices. 51: 597-602 |
| Lee JJ, Wang X, Bai W, et al. (2003) Theoretical and experimental investigation of Si nanocrystal memory device with HfO/sub 2/ high-k tunneling dielectric Ieee Transactions On Electron Devices. 50: 2067-2072 |