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Ravi J. Kumar, Ph.D.

Affiliations: 
2003 Rensselaer Polytechnic Institute, Troy, NY, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics
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Parents

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Partha S. Dutta grad student 2003 RPI
 (Recombination parameters in antimonide-based materials using RF photoreflectance.)

Children

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Sai C. Padala grad student 2007 RPI

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Publications

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Kumar RJ, Borrego JM, Dutta PS, et al. (2005) Auger and radiative recombination coefficients in 0.55-eV InGaAsSb Journal of Applied Physics. 97
Kumar RJ, Gutmann RJ, Borrego JM, et al. (2004) Recombination parameters for antimonide-based semiconductors using the radio frequency photoreflectance technique Journal of Electronic Materials. 33: 94-100
Kumar RJ, Gutmann RJ, Borrego JM, et al. (2003) Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications Materials Research Society Symposium - Proceedings. 763: 73-78
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