Benjamin D. Poust, Ph.D.
Affiliations: | 2007 | University of California, Los Angeles, Los Angeles, CA |
Area:
Materials Science EngineeringGoogle:
"Benjamin Poust"Parents
Sign in to add mentor| Mark S. Goorsky | grad student | 2007 | UCLA | |
| (X -ray scatter based metrologies for the development of metamorphic semiconductor device structures.) | ||||
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Publications
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| Lange MD, Tsai RS, Deal WR, et al. (2006) InAsAlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2581-2585 |
| Lange MD, Cavus A, Tsai RS, et al. (2005) Ultra-low-power HEMT and HBT devices and circuit demonstrations 2005 International Semiconductor Device Research Symposium. 2005: 145-146 |
| Poust BD, Koga TS, Sandhu R, et al. (2003) SiC substrate defects and III-N heteroepitaxy Journal of Physics D: Applied Physics. 36: A102-A106 |
| Feichtinger P, Fukuto H, Sandhu R, et al. (2000) Ion implantation and misfit dislocation formation in p/p+ silicon Materials Research Society Symposium - Proceedings. 594: 37-42 |