Klaus J. Bachmann
Affiliations: | North Carolina State University, Raleigh, NC |
Area:
Materials Science EngineeringGoogle:
"Klaus Bachmann"Bio:
https://www.osti.gov/servlets/purl/104769
https://books.google.com/books?id=EGATAQAAIAAJ
Parents
Sign in to add mentor| Klaus J. Vetter | grad student | 1966 | FU Berlin (Chemistry Tree) | |
| (Elektrochemische Untersuchungen an niedrig indizierten Silberkristallflächen) | ||||
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Publications
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| Grenko J, Reynolds C, Schlesser R, et al. (2004) Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures Mrs Internet Journal of Nitride Semiconductor Research. 9 |
| Grenko JA, Reynolds CL, Schlesser R, et al. (2004) Nanoscale GaN whiskers fabricated by photoelectrochemical etching Journal of Applied Physics. 96: 5185-5188 |
| Cardelino BH, Moore CE, Cardelino CA, et al. (2003) Semiclassical calculation of reaction rate constants for homolytical dissociation reactions of interest in organometallic vapor-phase epitaxy (OMVPE) Journal of Physical Chemistry A. 107: 3708-3718 |
| McCall SD, Bachmann KJ. (2002) Three-dimensional modeling of the high pressure organometallic chemical vapor deposition of InN using trimethylindium and ammonia Materials Research Society Symposium - Proceedings. 693: 73-80 |
| Narayanan V, Mahajan S, Bachmann KJ, et al. (2002) Stacking faults and twins in gallium phosphide layers grown on silicon Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 82: 685-698 |
| Narayanan V, Mahajan S, Bachmann KJ, et al. (2002) Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy Acta Materialia. 50: 1275-1287 |
| Narayanan V, Mahajan S, Bachmann KJ, et al. (2000) Island coalescence induced substructure within GaP epitaxial layers grown on (001), (111), (110) and (113) Si Materials Research Society Symposium - Proceedings. 618: 53-58 |
| Narayanan V, Mahajan S, Sukidit N, et al. (2000) Orientation mediated self-assembled gallium phosphide islands grown on silicon Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 80: 555-572 |
| Bachmann KJ, Cardelino BH, Moore CE, et al. (1999) Modeling and real-time process monitoring of organometallic chemical vapor deposition of III-V phosphides and nitrides at low and high pressures Materials Research Society Symposium - Proceedings. 569: 59-70 |
| Sukidi N, Bachmann KJ, Narayanan V, et al. (1999) Initial stages of heteroepitaxy of GaP on selected silicon surfaces Journal of the Electrochemical Society. 146: 1147-1150 |